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71. 发明授权

US5695568A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5695568A
公开(公告)日：1997-12-09
申请号：US200862
申请日：1994-02-23
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基底支撑在固体接受板上，固体接收板由具有限热构件和护罩的杆支撑，以保护杆，并且定位组件将衬底对准接收板。

72. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

73. 发明授权

US5316278A Clamping ring apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶圆的夹紧环装置
公开(公告)号：US5316278A
公开(公告)日：1994-05-31
申请号：US947212
申请日：1992-09-18
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
IPC分类号： H01L21/687 , B25B1/00
CPC分类号： H01L21/68721 , Y10S269/903
摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.
摘要翻译：公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封，通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

74. 发明授权

US5043299A Process for selective deposition of tungsten on semiconductor wafer 失效
标题翻译：在半导体晶片上选择性沉积钨的工艺
公开(公告)号：US5043299A
公开(公告)日：1991-08-27
申请号：US444485
申请日：1989-12-01
申请人： Mei Chang , David N. Wang
发明人： Mei Chang , David N. Wang
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06 , C23C16/54 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76879 , H01L21/28562 , Y10S148/051 , Y10S438/906 , Y10S438/908
摘要： An improved process for the selective deposition of tungsten on a masked semiconductor wafer is disclosed which comprises cleaning the surfaces of the wafer in an air-tight cleaning chamber, then transferring the cleaned wafer to a vacuum deposition chamber such as a CVD chamber for selective deposition of tungsten thereon without exposing the cleaned wafer to conditions which would recontaminate the cleaned wafer prior to said deposition, and then selectively depositing tungsten on the unmasked surfaces of the cleaned wafer.

75. 发明公开

US20240260533A1 AN APPARATUS AND A METHOD FOR SIMULATING ONE OR MORE ECO HABITAT CONDITIONS 审中-公开
公开(公告)号：US20240260533A1
公开(公告)日：2024-08-08
申请号：US18566323
申请日：2022-05-25
申请人： Pak Chuen CHANG , Ryan You Wen BOEY , Paulina Li Mei CHANG
发明人： Pak Chuen CHANG , Ryan You Wen BOEY , Paulina Li Mei CHANG
IPC分类号： A01K1/00 , A01G9/24
CPC分类号： A01K1/0047 , A01G9/246
摘要： The invention relates to an apparatus for simulating one or more eco habitat conditions. The apparatus includes at least one eco capsule unit and an air inlet chamber for receiving air. The eco capsule unit includes a pressurized water driven turbine, a low-pressure vacuum chamber, a pressurized humid air chamber, where the pressurized water driven turbine is configured to receive pressurized water to propel the pressurized water driven turbine, for generating a highly humidified air-water mixture and a pressurized humid air-water vapor by creating turbulence. The vacuum chamber is configured to enable a wind chill simulation and to remove heat from water for generating a water with reduced temperature by controlling the rate of evaporation of water. The pressurized humid air chamber is configured to capture the turbulence created water-pollutant mixture, highly humidified air-water mixture and the pressurized humid air-water vapor, to be expelled or recycled via an air blower or a humid air exhaust, for removing pollutants from the air to generate purified air with a desirable temperature.

76. 外观设计

USD982978S1 Foldable container 有权
公开(公告)号：USD982978S1
公开(公告)日：2023-04-11
申请号：US29794967
申请日：2021-06-16
申请人： Yu-Mei Chang , Cheng-Hui Huang
设计人： Yu-Mei Chang , Cheng-Hui Huang

77. 发明授权

US10312570B2 Long-distance radio frequency anti-metal identification tag 有权
公开(公告)号：US10312570B2
公开(公告)日：2019-06-04
申请号：US15693499
申请日：2017-09-01
申请人： Chi Ju Wu , Shirl Mei Chang , Alexander Chan , Chin Hsien Ting , Hsi Jui Chan
发明人： Chi Ju Wu , Shirl Mei Chang , Alexander Chan , Chin Hsien Ting , Hsi Jui Chan
IPC分类号： H01Q13/00 , H01Q1/22 , G06K19/077 , H01Q1/38 , H01Q7/00 , H01Q13/18
摘要： A long-distance radio frequency anti-metal identification tag is provided. When a bottom surface of an insulating spacer plate is attached to the surface of a metal object and an electronic tag reading device is used to read a radio frequency identification chip on a second antenna. A resonant cavity is formed between a slot of a first antenna and the surface of the metal object through the isolation of the insulating spacer plate, such that the second antenna located at the position of the resonant cavity resonates with an electromagnetic wave signal reflected on the surface of the metal object by the first antenna. The electromagnetic wave signal is transmitted to the radio frequency identification chip, or the feedback signal of the radio frequency identification chip is transmitted out. The overall UHF electronic tag is resistant to a metal interference and has the performance of long-distance reading.

78. 发明授权

US09447154B2 Nucleic acids encoding a house dust mite allergen, Der p III, and uses thereof 有权
标题翻译：编码房尘螨过敏原的核酸，Der p III及其用途
公开(公告)号：US09447154B2
公开(公告)日：2016-09-20
申请号：US12358954
申请日：2009-01-23
申请人： Wayne R. Thomas , Kaw-Yan Chua , Bruce L. Rogers , Mei-chang Kuo
发明人： Wayne R. Thomas , Kaw-Yan Chua , Bruce L. Rogers , Mei-chang Kuo
IPC分类号： A61K39/00 , A61K39/395 , C07K16/00 , C12P21/08 , C07K14/435 , A61K38/00
CPC分类号： C07K14/43531 , A61K38/00
摘要： Isolated nucleic acids encoding an allergen of Dermatophagoides pteronyssinus, Der p III, are disclosed. A cDNA encoding a peptide having a Der p III activity and a predicted molecular weight of about 24,985 daltons is also described. The nucleic acids can be used as probes to detect the presence of Der p III nucleic acid in a sample or for the recombinant production of peptides having an activity of Der p III. Peptides having an activity of Der p III can be used in compositions suitable for pharmaceutical administration or methods of diagnosing sensitivity to house dust mites.
摘要翻译：公开了编码Dermatophagoides pteronyssinus，Der p III的变应原的分离的核酸。还描述了编码具有Der p III活性和约24,985道尔顿的预测分子量的肽的cDNA。核酸可以用作探针，以检测样品中Der p III核酸的存在或重组产生具有Der p III活性的肽。具有Der p III活性的肽可用于适用于药物施用的组合物或诊断对尘螨敏感性的方法。

79. 发明授权

US09274774B2 Common installer server 有权
公开(公告)号：US09274774B2
公开(公告)日：2016-03-01
申请号：US11261953
申请日：2005-10-28
申请人： Sorin Jianu , Sundar Pichai , Jocelyn Lin , Ann Mei Chang , Othman Laraki , Joerg Heilig , John Fu , Shankar Ganesh , Jian Li , Jesse Savage , Carl Schedvin
发明人： Sorin Jianu , Sundar Pichai , Jocelyn Lin , Ann Mei Chang , Othman Laraki , Joerg Heilig , John Fu , Shankar Ganesh , Jian Li , Jesse Savage , Carl Schedvin
IPC分类号： G06F9/445 , H04L29/08
CPC分类号： G06F8/61 , G06F8/65 , H04L63/123 , H04L67/02 , H04L67/34
摘要： Systems and techniques to provide for software installation. In general, in one implementation, the technique includes detecting selection of one or more applications by a user; creating a manifest for the one or more applications, the manifest including a reference to the one or more applications and a reference to one or more installers, where each of the one or more applications is associated with a unique one of the one or more installers; and providing the manifest to a target system where each of the one or more applications can be installed, none of the applications or installers being provided in the manifest.

80. 发明授权

US09004006B2 Process chamber lid design with built-in plasma source for short lifetime species 有权
标题翻译：过程室盖设计，内置等离子体源，用于短寿命物种
公开(公告)号：US09004006B2
公开(公告)日：2015-04-14
申请号：US13095720
申请日：2011-04-27
申请人： Chien-Teh Kao , Hyman W. H. Lam , Mei Chang , David T. Or , Nicholas R. Denny , Xiaoxiong Yuan
发明人： Chien-Teh Kao , Hyman W. H. Lam , Mei Chang , David T. Or , Nicholas R. Denny , Xiaoxiong Yuan
IPC分类号： C23C16/00 , C23C16/455 , C23C16/505 , H01J37/32
CPC分类号： C23C16/45536 , C23C16/45565 , C23C16/505 , H01J37/32091 , H01J37/3244
摘要： An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
摘要翻译：提供一种用于沉积材料的装置和方法，更具体地，提供了在等离子体增强过程期间配置成沉积材料的气相沉积室。在一个实施例中，室包括限定处理体积的室主体，设置在处理容积中并被配置为支撑一个或多个基板的基板支撑件，设置在基板支撑件上方的过程盖组件，其中处理盖组件具有等离子体腔被配置为产生等离子体并且为处理体积提供一个或多个自由基物质，耦合到气体分配组件的RF（射频）功率源，与处理盖组件耦合的等离子体形成气体源，以及反应气体源与工艺盖组件。

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