专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US3914857A Process for the production of a charge shift arrangement by a two-phase technique 失效
标题翻译：用于通过两相技术制造电荷位移布置的方法
公开(公告)号：US3914857A
公开(公告)日：1975-10-28
申请号：US49470874
申请日：1974-08-05
申请人： SIEMENS AG
发明人： GOSER KARL , STEIN KARL-ULRICH
IPC分类号： H01L29/762 , H01L21/00 , H01L21/339 , H01L29/10 , H01L29/768 , B01J17/00
CPC分类号： H01L29/76875 , H01L21/00 , H01L29/1062 , Y10S148/025 , Y10S148/106 , Y10S148/143
摘要： A two-phase ion implantation process to form a charge coupled device comprising forming an electrically insulating layer on a semiconductor substrate, forming a metal layer on said insulating layer, forming a photo-resist layer on said metal layer, selectively etching areas of the photo-resist layer and the metal layer therebelow to provide spaced electrodes, subjecting the gaps between the electrodes to an ion implantation beam directed at one corner of each gap at a relatively small angle to the plane of the substrate to cause ions to be implanted below one edge region of each electrode, subjecting the gaps to a second ion implantation beam directed at an oblique angle to the substrate which is larger than the angle of said first ion beam to cause ions to be implanted in the substrate beneath each gap but spaced from the edge of the gap which lies opposite to the said one edge, removing the photo-resist layer, forming a second electric insulating layer over the said electrodes and over the bottom and sides of the gaps, forming a second group of electrodes on the second insulating layer over each gap between adjacent electrodes. The ions of the first ion beam are of the same type as are contained in the substrate. The ions of the second beam are of the opposite type to those contained in the substrate. In a preferred embodiment, the ions of the first beam are phosphorus ions, the ions of the second beam are boron ions, and the semiconductor substrate is silicon.
摘要翻译：一种用于形成电荷耦合器件的两相离子注入工艺，包括在半导体衬底上形成电绝缘层，在所述绝缘层上形成金属层，在所述金属层上形成光致抗蚀剂层，选择性地蚀刻照片的区域并且其下面的金属层提供间隔开的电极，使电极之间的间隙以指向每个间隙的一个角的离子注入束以相对于衬底的平面相对较小的角度进行离子注入，以使离子注入低于一个每个电极的边缘区域，使间隙经受与衬底倾斜的角度的第二离子注入束，所述第二离子注入束大于所述第一离子束的角度，以使离子注入到每个间隙下方的衬底中，但与与所述一个边缘相对的间隙的边缘，去除光致抗蚀剂层，在所述电极和ov上形成第二电绝缘层在间隙的底部和侧面上，在相邻电极之间的每个间隙上的第二绝缘层上形成第二组电极。第一离子束的离子与衬底中包含的离子类型相同。第二光束的离子与衬底中包含的离子相反。在优选实施例中，第一光束的离子是磷离子，第二光束的离子是硼离子，半导体衬底是硅。

62. 发明授权

US3899557A Hollow semiconductor bodies and method of producing the same 失效
标题翻译：中空半导体器件及其制造方法
公开(公告)号：US3899557A
公开(公告)日：1975-08-12
申请号：US41075873
申请日：1973-10-29
申请人： SIEMENS AG
发明人： DIETZE WOLFGANG
IPC分类号： C01B33/02 , C01B33/027 , C23C16/01 , C23C16/22 , C23C16/44 , C30B29/60 , C30B31/10 , H01L21/22 , C23C11/06
CPC分类号： C23C16/01 , C23C16/22 , C30B31/10 , Y10S148/007 , Y10S148/025 , Y10S148/073 , Y10S264/57
摘要： Hollow semiconductor bodies having an outer surface composed of a doped semiconductor material and an inner surface composed of a pure semiconductor material are formed by sequential deposition from a gaseous thermally decomposable semiconductor compound onto a heated carrier member. The multi-layer hollow semiconductor bodies are directly heatable during diffusion of dopants into semiconductor elements.
摘要翻译：通过从气态热分解半导体化合物到加热的载体构件的顺序沉积，形成具有由掺杂半导体材料构成的外表面和由纯半导体材料组成的内表面的空心半导体本体。多层中空半导体体在掺杂剂扩散到半导体元件期间是可直接加热的。

63. 发明授权

US3868722A Semiconductor device having at least two transistors and method of manufacturing same 失效
标题翻译：具有最小二极管的半导体器件及其制造方法
公开(公告)号：US3868722A
公开(公告)日：1975-02-25
申请号：US29446572
申请日：1972-10-02
申请人： PHILIPS CORP
发明人： LE CAN CLAUDE JAN PRINCIPE FRE , STEINMAIER WALTER
IPC分类号： H01L27/07 , H01L27/082 , H01L27/02 , H01L27/04 , H01L29/72
CPC分类号： H01L27/0755 , H01L27/0825 , Y10S148/025 , Y10S148/085 , Y10S148/098
摘要： A monolithic integrated semiconductor device according to the invention comprises a group of bipolar transistors of the same type (n-p-n or p-n-p) of which only a first sub-group is provided in insulated islands, said islands being surrounded by cup-shaped insulation zones, the transistors of a second sub-group having a common collector zone and the semiconductor body of the device comprising a low-ohmic substrate on which a high-ohmic epitaxial layer of the same conductivity type as that of the substrate is provided, said substrate belonging to the low-ohmic part of the common collector zone. The first sub-group comprises at least one transistor. Preferably this first transistor is a self-insulating transistor which is provided in or at least adjoins the commen collector zone of the second subgroup, a cup-shaped insulation zone being used which forms part of the base zone of the first transistor and, with the collector zone of the second sub-group forms a p-n junction surrounding the first transistor.
摘要翻译：根据本发明的单片集成半导体器件包括一组相同类型（npn或pnp）的双极晶体管，其中只有第一子组被设置在绝缘岛中，所述岛被杯形绝缘区包围，具有公共集电极区的第二子组的晶体管，并且该器件的半导体本体包括低欧姆衬底，在其上提供与衬底相同导电类型的高欧姆外延层，所述衬底属于公共采集区的低欧姆部分。

64. 发明授权

US3867497A Process of making hollow bodies or tubes of semi-conducting materials 失效
标题翻译：制造中空体或半导体材料管的工艺
公开(公告)号：US3867497A
公开(公告)日：1975-02-18
申请号：US34580573
申请日：1973-03-28
申请人： WACKER CHEMITRONIC
发明人： TEICH HORST , GOPPINGER ALOIS
IPC分类号： C01B33/02 , C01B33/027 , C23C16/01 , C23C16/24 , C23C16/44 , H01L21/205 , H01L21/22 , B01J17/28 , B29C13/04
CPC分类号： C23C16/01 , C23C16/24 , Y10S148/025 , Y10S148/073 , Y10S148/122
摘要： Process for making semi-conducting hollow bodies by thermal splitting of volatile semi-conducting silicon compounds comprising passing the volatile silicon compounds over a carbon mold or a carbon-coated mold, and depositing thereon in three successive stages, SiO2, amorphous silicon, and polycrystalline silicon by adjustment of the temperature in each stage, and, after cooling, lifting the polycrystalline silicon body off the mold. The invention also comprises the polycrystalline Si body so made.
摘要翻译：通过热分解挥发性半导体硅化合物制造半导体中空体的方法，包括使挥发性硅化合物通过碳模或碳涂覆的模具，并在其上沉积三个阶段，SiO 2，非晶硅和多晶通过调节各阶段的温度，并且在冷却之后将多晶硅体从模具上提起。本发明还包括如此制成的多晶Si体。

65. 发明授权

US3713900A Method for making uniform single crystal semiconductors epitaxially 失效
标题翻译：制造单晶单晶半导体的方法外延
公开(公告)号：US3713900A
公开(公告)日：1973-01-30
申请号：US3713900D
申请日：1969-04-02
申请人： SUZUKI C
发明人： SUZUKI C
IPC分类号： C30B19/10 , C30B19/12 , H01L21/208 , H01L7/38 , B01J17/20
CPC分类号： C30B19/106 , C30B19/12 , H01L21/02546 , H01L21/02625 , H01L21/02628 , Y10S148/025 , Y10S148/107 , Y10S148/134 , Y10S148/17
摘要： A liquid epitaxial method for growing single crystal semiconductors, such as gallium arsenide, having a substantially uniform three-dimensional impurity distribution. A melt of the epitaxial growth material is first caused to etch the surface of the seed to prepare a virgin surface. Epitaxial formation then involves rapid nucleation of the semiconductor on the virgin surface so that nucleation occurs uniformly over the entire seed surface. Thereafter, formation of the bulk semiconductor proceeds isothermally by vapor-liquid-solid deposition to insure uniformity of formation of the semiconductor.
摘要翻译：用于生长具有基本均匀的三维杂质分布的单晶半导体（例如砷化镓）的液体外延方法。首先使外延生长材料的熔体蚀刻种子的表面以制备未处理的表面。外延形成然后包括半导体在原始表面上的快速成核，使得成核在整个种子表面上均匀地发生。此后，通过汽 - 液 - 固沉积等温进行体半导体的形成，以确保半导体形成的均匀性。

66. 发明授权

US3663319A Masking to prevent autodoping of epitaxial deposits 失效
标题翻译：掩蔽防止外来沉积物的自动化
公开(公告)号：US3663319A
公开(公告)日：1972-05-16
申请号：US3663319D
申请日：1968-11-20
申请人： GEN MOTORS CORP
发明人： ROSE JOHN W
IPC分类号： H01L21/205 , H01L21/22 , H01L7/36
CPC分类号： H01L21/2205 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , Y10S148/007 , Y10S148/012 , Y10S148/017 , Y10S148/025 , Y10S148/026 , Y10S438/916
摘要： A technique is disclosed for producing extremely high resistivity epitaxial deposits, particularly of P-type conductivity on low resistivity substrates. P-type epitaxial deposits of up to 50 ohm-centimeters on a 0.01 ohm-centimeter Ptype substrate can be obtained by masking the back and sides of the epitaxial substrate, leaving exposed only the surface on which the epitaxial deposit is formed.
摘要翻译：公开了一种用于生产极高电阻率外延沉积物的技术，特别是在低电阻率基底上的P型导电性。通过掩蔽外延衬底的背面和侧面，可以获得在0.01欧姆厘米P型衬底上高达50欧姆厘米的P型外延沉积物，仅露出形成有外延沉积物的表面。

67. 发明授权

US3484311A Silicon deposition process 失效
标题翻译：硅沉积工艺
公开(公告)号：US3484311A
公开(公告)日：1969-12-16
申请号：US3484311D
申请日：1966-06-21
申请人： UNION CARBIDE CORP
发明人： BENZING WALTER C
IPC分类号： C23C16/24 , H01L7/36
CPC分类号： C23C16/24 , Y10S148/025 , Y10S148/085 , Y10S148/122 , Y10S148/15

68. 发明授权

US3473978A Epitaxial growth of germanium 失效
标题翻译：锗的外来生长
公开(公告)号：US3473978A
公开(公告)日：1969-10-21
申请号：US3473978D
申请日：1967-04-24
申请人： MOTOROLA INC
发明人： JACKSON DON M JR , HOWARD ROBERT W
IPC分类号： C30B25/02 , C30B25/18 , H01L21/00 , H01L21/205 , H01L7/36 , C23C11/02
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/08 , H01L21/00 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10S148/025 , Y10S148/059 , Y10S148/067 , Y10S148/072
摘要： 1,151,484. Coating with germanium. MOTOROLA Inc. April 9, 1968 [April 24, 1967], No. 17010/68. Heading C7F. A layer of monocrystalline Ge is formed on a Si substrate by first expitaxially growing a monocrystalline layer of Si from e.g. silicon tetrachloride, or SiH 4 on a monocrystalline silicon wafer, and then depositing Ge from a mixture of germane and a carrier gas e.g, helium, hydrogen or nitrogen, the temperature of the newly formed silicon being from 350 to 670‹ C., for a time sufficient to grow at least 0À2 microns of Ge, and then increasing the temperature to above 670‹ C. The further growth of Ge may be effected using germane, trichlorogermane or germanium tetrachloride. The reactions may take place in a quartz tube with R.F. induction coils Fig.1 (not shown).

69. 发明授权

US3433682A Silicon coated graphite 失效
标题翻译：硅胶涂层石墨
公开(公告)号：US3433682A
公开(公告)日：1969-03-18
申请号：US3433682D
申请日：1965-07-06
申请人： AMERICAN STANDARD INC
发明人： KALNIN ILMAR L
IPC分类号： C04B41/52 , C04B41/89 , C23F7/00
CPC分类号： C04B41/009 , C04B41/52 , C04B41/89 , Y10S148/016 , Y10S148/025 , Y10S148/148 , Y10S148/17 , Y10T428/30 , C04B41/51 , C04B41/50 , C04B35/52

70. 发明授权

US3226269A Monocrystalline elongate polyhedral semiconductor material 失效
标题翻译：单晶细长多面体半导体材料
公开(公告)号：US3226269A
公开(公告)日：1965-12-28
申请号：US36592564
申请日：1964-05-12
申请人： MERCK & CO INC
发明人： ALLEGRETTI JOHN E , HEINRICH GUTSCHE , MCALEER WILLIAM J
IPC分类号： H01L21/00 , H01L27/06 , H01L29/00 , H01L29/04
CPC分类号： H01L29/045 , H01L21/00 , H01L27/0688 , H01L29/00 , Y10S117/902 , Y10S148/025 , Y10S148/051 , Y10S148/085 , Y10S148/115 , Y10S257/926 , Y10S438/973

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式