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61. 发明授权

US5629245A Method for forming a multi-layer planarization structure 失效
标题翻译：形成多层平坦化结构的方法
公开(公告)号：US5629245A
公开(公告)日：1997-05-13
申请号：US376736
申请日：1995-01-23
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316 , H01L21/20
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/487 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

62. 发明授权

US5328514A Device for forming film by photo-chemical vapor deposition 失效
标题翻译：光化学气相沉积法形成薄膜的装置
公开(公告)号：US5328514A
公开(公告)日：1994-07-12
申请号：US809915
申请日：1991-12-19
申请人： Naoki Inoue , Haruyuki Nakaoka , Hideki Azuma , Shigeru Morikawa , Takashi Kobayashi
发明人： Naoki Inoue , Haruyuki Nakaoka , Hideki Azuma , Shigeru Morikawa , Takashi Kobayashi
IPC分类号： C23C16/48 , H01L21/205 , H01L21/268 , H01L21/31
CPC分类号： C23C16/488 , C23C16/483
摘要： The invention provides a film-forming apparatus by a photo-CVD method comprising such essential structural elements as a light inlet in the form of a tube, a film-forming chamber, a light outlet in the form of a tube and a nozzle for feeding a mixture of a reactant and a gas for dilution so that a specific relation exists in the dimensions between the elements.With this structure, the film-forming apparatus by a photo-CVD method prevents the blur of the laser beam-incoming window due to contaminants adhered thereto, thereby enabling the extension of reaction time, increase of the deposition, and formation of a film with uniform thickness, and making the composition of the film closest to the stoichiometric one.
摘要翻译：本发明提供了一种通过光CVD法形成的成膜装置，其包括诸如管形式的光入口，成膜室，管形式的光出口和用于进料的喷嘴的基本结构元件用于稀释的反应物和气体的混合物，使得元件之间的尺寸存在特定的关系。利用这种结构，通过光CVD法的成膜装置防止了由于附着于其上的污染物引起的激光入射窗的模糊，从而能够延长反应时间，增加沉积和形成膜均匀的厚度，并使膜的组成最接近化学计量。

63. 发明授权

US5229081A Apparatus for semiconductor process including photo-excitation process 失效
标题翻译：包括光激发工艺的半导体工艺装置
公开(公告)号：US5229081A
公开(公告)日：1993-07-20
申请号：US670368
申请日：1991-03-14
申请人： Toshikazu Suda
发明人： Toshikazu Suda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45514 , C23C16/482 , C23C16/487 , C23C16/488
摘要： An apparatus for use in semiconductor fabrication that includes use of a photo-excitation process and is provided with a revolving gas chamber for forming spiral vortices flow of purge gas located at the upper or side part of a gas reaction chamber, an internal or external light source, a partition having a centrally located circular opening provided between the revolving gas chamber and the gas reaction chamber, or without the partition when the revolving gas chamber is made smaller than the gas reaction chamber. The revolving gas chamber has a multiplicity of gas inlets oriented at an angle with respect to the center of the revolving gas chamber to produce a gas flow in one direction to form spiral vortices that revolves and thereby prevents the light source or light transmitting window from becoming contaminated by process reactions.
摘要翻译：一种用于半导体制造的装置，包括使用光激发过程，并且设置有旋转气室，用于形成位于气体反应室的上部或侧部的吹扫气体的螺旋涡流，内部或外部光源，具有设置在旋转气体室和气体反应室之间的中心定位的圆形开口的隔板，或者当旋转气体室比气体反应室小时，没有分隔壁。旋转气室具有多个气体入口，其相对于旋转气体室的中心以一定角度定向，以在一个方向上产生气流以形成旋转的螺旋涡流，从而防止光源或透光窗口变成被过程反应污染。

64. 发明授权

US5183511A Photo CVD apparatus with a glow discharge system 失效
标题翻译：具有辉光放电系统的照相CVD装置
公开(公告)号：US5183511A
公开(公告)日：1993-02-02
申请号：US352644
申请日：1989-05-12
申请人： Shunpei Yamazaki , Shigenori Hayashi , Takashi Inujima , Naoki Hirose
发明人： Shunpei Yamazaki , Shigenori Hayashi , Takashi Inujima , Naoki Hirose
IPC分类号： C23C16/48 , H01J37/32
CPC分类号： H01J37/32458 , C23C16/482 , C23C16/488 , H01J37/32862
摘要： A photo CVD apparatus includes a reaction chamber, a light source for radiating light to the inside of the chamber through a light window, and a pair of electrodes disposed in the chamber for glow discharge, one of the electrodes being located on the light window. After deposition by photo CVD, a light window for transmission of UV light is cleaned by plasma etching by virtue of glow discharge taking place between the electrodes. The light source and the electrodes for plasma etching share one power supply for supplying high frequency electric power.
摘要翻译：照相CVD装置包括反应室，通过光窗将光照射到室内的光源，以及设置在用于辉光放电的室中的一对电极，其中一个电极位于光窗上。在通过光CVD沉积之后，通过在电极之间发生辉光放电，通过等离子体蚀刻来清洁用于透射UV光的光窗口。用于等离子体蚀刻的光源和电极共享用于提供高频电力的一个电源。

65. 发明授权

US4836140A Photo-CVD apparatus 失效
标题翻译：光CVD装置
公开(公告)号：US4836140A
公开(公告)日：1989-06-06
申请号：US245936
申请日：1988-09-16
申请人： Masashi Koji
发明人： Masashi Koji
IPC分类号： H01L21/31 , C23C16/48 , C23C16/54 , H01L21/205 , H01L21/263
CPC分类号： C23C16/482 , C23C16/488 , C23C16/54
摘要： A photo-CVD (chemical vapor deposition) apparatus is disclosed, in which at least two light transmission plates are used and the light from a light source is introduced into a gas reaction chamber through one of light transmission plates inserted into the chamber to cause the reactions in a reaction gas to thereby deposit a thin film or layer on a substrate located in the gas reaction chamber. In this case, a light transmission plate polluted by the reaction gas is moved to the outside of the chamber, then washed or exchanged with a new one manually or automaticaly while a clean one is inserted into the chamber, so that the photo-CVD process can be carried out continuously without interrupting the irradiation of the light from the light source.
摘要翻译：公开了一种光CVD（化学气相沉积）装置，其中使用至少两个光透射板，并且将来自光源的光通过插入室中的一个透光板引入气体反应室，使得反应气体中的反应，从而在位于气体反应室中的基底上沉积薄膜或层。在这种情况下，由反应气体污染的透光板被移动到室的外部，然后手动或自动地洗涤或更换新的，同时将清洁的一个插入到室中，使得光CVD过程可以连续地进行而不中断来自光源的光的照射。

66. 发明授权

US4683147A Method of forming deposition film 失效
标题翻译：形成沉积膜的方法
公开(公告)号：US4683147A
公开(公告)日：1987-07-28
申请号：US722468
申请日：1985-04-12
申请人： Ken Eguchi , Hiroshi Matsuda , Masahiro Haruta , Yukuo Nishimura , Yutaka Hirai , Takashi Nakagiri
发明人： Ken Eguchi , Hiroshi Matsuda , Masahiro Haruta , Yukuo Nishimura , Yutaka Hirai , Takashi Nakagiri
IPC分类号： B05D3/06 , B05D7/24 , C23C16/22 , C23C16/48 , H01L21/205
CPC分类号： B05D1/60 , C23C16/22 , C23C16/482 , C23C16/483 , C23C16/488 , H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , B05D3/06
摘要： A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si.sub. c X.sub.d Y.sub.e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si.sub.f Y.sub.g Y.sub.h (X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si.sub.i H.sub.j X.sub.k (wherein X is a halogen atom, i,j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.
摘要翻译：一种形成沉积在基底上的含硅膜的方法，其包括以下步骤：形成至少一种选自以下通式（A），（B），（C ），（D），（E）和（F），并且向化合物施加光能以排出和分解化合物。通式（A） - （F）的化合物定义如下：（A）SinHmX1（其中X是卤素原子，n是不小于3的整数，m和l是不小于1的整数分别为m + 1 = 2n;如果l为不小于2的整数，多个X可以表示不同的卤原子），代表环状硅化合物; （B）代表链卤化硅化合物的SiaX2a + 2（其中X是卤素原子，a是1至6的整数）; （C）表示环状卤代硅化合物的SibX2b（其中，X为卤素原子，b为3〜6的整数）（D）Si cXdYe（其中X和Y是不同的卤素原子，c是3至6的整数，d和e是不小于1的整数，d + e = 2c）表示环状卤化硅化合物; （E）SifYgYh（X和Y是不同的卤素原子，f是1至6的整数，g和h是不小于1的整数，g + h = 2f + 2）代表链卤化硅化合物; 和（F）SiiHjXk（其中X是卤素原子，i，j和k是不小于1的整数，j + k = 2i + 2）表示硅化合物。

67. 发明授权

US4597986A Method for photochemical vapor deposition 失效
标题翻译：光化学气相沉积方法
公开(公告)号：US4597986A
公开(公告)日：1986-07-01
申请号：US764815
申请日：1985-08-12
申请人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
发明人： Robert Y. Scapple , John W. Peters , Jacques F. Linder , Edward M. Yee
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , B05D3/06
CPC分类号： C23C16/45578 , C23C16/45589 , C23C16/482 , C23C16/487 , C23C16/488
摘要： An apparatus for photochemical vapor deposition includes an outer reactor shell and a concentric inner shell which define a photochemical reaction zone. A radiation source is centrally located within the transparent inner shell, which isolates the radiation source from the vapor phase reactants present in the reaction zone. A rotating gas manifold is located within the reaction zone to uniformly distribute the vapor phase reactants within the reaction zone. Protective liquid is continually applied to the outer surface of the inner shell and spread into a thin film by wiper blades, to prevent deposition of reaction products onto the outer wall of the inner shell. The central location of the radiation source, along with the protective liquid film, make optimum usage of the reaction-inducing radiation generated by the radiation source. In addition, the rotating gas manifold promotes uniform deposition of layers of selected materials on substrates placed within the reaction zone.
摘要翻译：用于光化学气相沉积的装置包括外反应器壳和限定光化学反应区的同心内壳。辐射源位于透明内壳的中心位置，其将辐射源与反应区中存在的气相反应物隔离。旋转气体歧管位于反应区内，以使气相反应物在反应区内均匀分布。保护液体连续地施加到内壳的外表面，并通过刮片传播成薄膜，以防止反应产物沉积到内壳的外壁上。辐射源的中心位置以及保护液膜可以最佳地利用由辐射源产生的反应诱导辐射。此外，旋转气体歧管促进了选定材料的层的均匀沉积在放置在反应区内的衬底上。

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