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61. 发明申请

US20130065327A1 METHOD AND SYSTEM FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENGTH CONVERSION LAYERS HAVING CONTROLLED COLOR CHARACTERISTICS 有权
标题翻译：用于制造具有控制颜色特性的波长转换层的发光二极管（LED）数位板的方法和系统
公开(公告)号：US20130065327A1
公开(公告)日：2013-03-14
申请号：US13562519
申请日：2012-07-31
申请人： Jui-Kang Yen , Georg Soerensen , Mark Ewing Tuttle
发明人： Jui-Kang Yen , Georg Soerensen , Mark Ewing Tuttle
IPC分类号： H01L33/50
CPC分类号： H01L33/501 , H01L33/0095 , H01L2933/0041
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT).
摘要翻译：制造发光二极管（LED）晶片的方法包括以下步骤：用波长转换材料涂覆透明衬底，连续评估由波长转换材料产生的输出电磁辐射的相关色温（CCT），并比较相关色彩温度（CCT）到目标相关色温（CCT），并且响应于来自评估和比较步骤的反馈来控制涂层步骤以调节相关色温（CCT）以实现目标相关色温（CCT）。一种用于制造发光二极管（LED）裸片的系统包括涂层系统，监测系统和控制系统，其被配置为控制涂层系统以调节透明衬底上的波长转换材料的相关色温（CCT）以实现目标相关色温（CCT）。

62. 发明申请

US20130062592A1 LIGHT EMITTING DIODE (LED) DICE HAVING WAVELENGTH CONVERSION LAYERS AND METHODS OF FABRICATION 有权
标题翻译：具有波长转换层的发光二极管（LED）数量和制造方法
公开(公告)号：US20130062592A1
公开(公告)日：2013-03-14
申请号：US13463874
申请日：2012-05-04
申请人： JUI-KANG YEN
发明人： JUI-KANG YEN
IPC分类号： H01L33/06 , H01L33/58 , H01L33/60
CPC分类号： H01L33/50 , H01L33/501 , H01L33/505 , H01L2933/0041
摘要： A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles in the base material to a first weight percentage, mixing the reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die.
摘要翻译：发光二极管（LED）管芯包括具有基材的波长转换层和嵌入在包括波长转换颗粒的基材中的多个颗粒和反射颗粒。制造发光二极管（LED）模具的方法包括以下步骤：将基材中的波长转换颗粒混合到第一重量百分比，将基材中的反射颗粒混合至第二重量百分比，固化基材以形成具有选定厚度的波长转换层，并将波长转换层附接到管芯。

63. 发明申请

US20130057156A1 LIGHT EMITTING DIODE (LED) SYSTEM HAVING LIGHTING DEVICE AND WIRELESS CONTROL SYSTEM 有权
标题翻译：具有照明设备和无线控制系统的发光二极管（LED）系统
公开(公告)号：US20130057156A1
公开(公告)日：2013-03-07
申请号：US13670531
申请日：2012-11-07
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： TRUNG TRI DOAN
IPC分类号： H05B37/02
CPC分类号： H01L25/167 , H01L2224/16225 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/12032 , H01L2924/13033 , H01L2924/13091 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode (LED) system includes one or more light emitting diodes (LED), or other lighting devices, configured to provide lighting in an area, and a wireless control system configured to control the light emitting diodes (LED). The wireless control system includes at least one transmitter/receiver device in signal communication with the light emitting diode (LED), and a wireless control device operable by a user, configured to send input signals to the transmitter/receiver device for controlling the light emitting diode (LED), and to receive output signals from the transmitter/receiver device for indicating a status of the light emitting diodes (LED).
摘要翻译：发光二极管（LED）系统包括一个或多个配置成在区域内提供照明的发光二极管（LED）或其他照明装置，以及被配置为控制发光二极管（LED）的无线控制系统。无线控制系统包括与发光二极管（LED）信号通信的至少一个发射机/接收机设备，以及可由用户操作的无线控制设备，其被配置为向发射机/接收机设备发送输入信号以控制发光二极管（LED），并且从发射机/接收机设备接收用于指示发光二极管（LED）的状态的输出信号。

64. 发明授权

US08384088B2 Vertical light emitting diode having an outwardly disposed electrode 有权
标题翻译：垂直发光二极管具有向外设置的电极
公开(公告)号：US08384088B2
公开(公告)日：2013-02-26
申请号：US12939984
申请日：2010-11-04
申请人： Chen-Fu Chu , Wen-Huang Liu , Hao-Chun Cheng
发明人： Chen-Fu Chu , Wen-Huang Liu , Hao-Chun Cheng
IPC分类号： H01L33/32
CPC分类号： H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
摘要翻译：本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

65. 发明授权

US08283652B2 Vertical light emitting diode (VLED) die having electrode frame and method of fabrication 有权
标题翻译：具有电极框架和制造方法的垂直发光二极管（VLED）芯片
公开(公告)号：US08283652B2
公开(公告)日：2012-10-09
申请号：US12845007
申请日：2010-07-28
申请人： Chen-Fu Chu , Feng-Hsu Fan , Hao-Chun Cheng , Trung Tri Doan
发明人： Chen-Fu Chu , Feng-Hsu Fan , Hao-Chun Cheng , Trung Tri Doan
IPC分类号： H01L33/04
CPC分类号： H01L33/38 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/641 , H01L33/647
摘要： A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer. The vertical light emitting diode (VLED) die can also include a passivation layer formed on the metal base surrounding and electrically insulating the electrode frame, the edges of the mirror, the edges of the p-type semiconductor layer, the edges of the multiple quantum well (MQW) layer and the edges of the n-type semiconductor layer.
摘要翻译：垂直发光二极管（VLED）模具包括金属基底; 金属底座上的镜子; 反射层上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。垂直发光二极管（VLED）裸片还包括在n型半导体层上的电极和电极框架，以及包含在电极框架内的有机或无机材料。电极和电极框架被配置为提供高电流容量并且将电流从外周延伸到n型半导体层的中心。垂直发光二极管（VLED）裸片还可以包括形成在金属基底上的钝化层，该钝化层围绕并电绝缘电极框架，反射镜的边缘，p型半导体层的边缘，多个量子的边缘（MQW）层和n型半导体层的边缘。

66. 发明授权

US08124454B1 Die separation 有权
标题翻译：模具分离
公开(公告)号：US08124454B1
公开(公告)日：2012-02-28
申请号：US11548629
申请日：2006-10-11
申请人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

67. 外观设计

USD653630S1 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：USD653630S1
公开(公告)日：2012-02-07
申请号：US29390317
申请日：2011-04-22
申请人： Wen-Huang Liu
设计人： Wen-Huang Liu

68. 发明申请

US20110316027A1 CHIP-TYPE LIGHT EMITTING DEVICE HAVING PRECISELY COATED WAVELENGTH-CONVERTING LAYER AND PACKAGED STRUCTURE THEREOF 失效
标题翻译：具有精密涂层波长转换层的芯片型发光器件及其包装结构
公开(公告)号：US20110316027A1
公开(公告)日：2011-12-29
申请号：US13118336
申请日：2011-05-27
申请人： Wen-Huang Liu , Chung-Che Dan , Yuan-Hsiao Chang , Hung-Jen Kao
发明人： Wen-Huang Liu , Chung-Che Dan , Yuan-Hsiao Chang , Hung-Jen Kao
IPC分类号： H01L33/50 , H01L33/60
CPC分类号： H01L23/24 , H01L33/505 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.
摘要翻译：本发明涉及包括一个或多个发光半导体的芯片型发光器件和设置在一个或多个发光半导体的顶部上的一个或多个框架。

69. 发明申请

US20110309390A1 Lighting Device Comprising Leds With Phosphor Layers 有权
标题翻译：包含荧光体层的LED的照明装置
公开(公告)号：US20110309390A1
公开(公告)日：2011-12-22
申请号：US13203234
申请日：2010-03-11
申请人： Wen-Huang Liu , Trung-Tri Doan , Chuong-Anh Tran
发明人： Wen-Huang Liu , Trung-Tri Doan , Chuong-Anh Tran
IPC分类号： H01L33/08 , H01L33/60
CPC分类号： H01L25/0753 , H01L33/507 , H01L33/508 , H01L2224/48091 , H01L2224/8592 , H01L2924/0002 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.
摘要翻译：包括具有磷光体层的LED的照明装置包括可以发射具有360nm和490nm之间的峰值发射波长的光的多个LED组; 以及覆盖多个LED组中的相应的LED组的多组荧光体层。多个LED组中的至少两个分别具有彼此不同的峰值发射波长。多组荧光体层中的至少一个荧光体层的主要荧光波长范围为500nm至580nm，并且至少其中一组荧光体层的主荧光波长范围为590nm至650nm。

70. 发明授权

US07863639B2 Light-emitting diode lamp with low thermal resistance 有权
标题翻译：具有低热阻的发光二极管灯
公开(公告)号：US07863639B2
公开(公告)日：2011-01-04
申请号：US11279530
申请日：2006-04-12
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/647 , H01L24/73 , H01L33/486 , H01L33/641 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/00012
摘要： A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. This metal plate can then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively connected through several heat conduction layers to a large heat sink that may be included in the structure.
摘要翻译：提供了一种具有比传统LED灯具更低热传导路径的发光二极管（LED）结构。对于一些实施例，提供了一种可表面安装的发光二极管结构，其具有沉积在金属基板上的有源层，该有源层直接接合到金属板上，该金属板通过将其定位在发光二极管的底部而基本上暴露于低热阻结构体。然后将该金属板焊接到包括散热器的印刷电路板（PCB）。对于本发明的一些实施例，金属板通过几个导热层被热导电地连接到可以包括在结构中的大型散热器。

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