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1. 发明授权

US08802469B2 Method of fabricating semiconductor die using handling layer 有权
标题翻译：使用处理层制造半导体管芯的方法
公开(公告)号：US08802469B2
公开(公告)日：2014-08-12
申请号：US13109687
申请日：2011-05-17
申请人： Chen-Fu Chu , Trung Tri Doan , Hao-Chun Cheng , Feng-Hsu Fan , Fu-Hsien Wang
发明人： Chen-Fu Chu , Trung Tri Doan , Hao-Chun Cheng , Feng-Hsu Fan , Fu-Hsien Wang
IPC分类号： H01L21/301
CPC分类号： H01L33/0079 , H01L33/0095
摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.
摘要翻译：描述了在半导体制造期间分离多个管芯的方法。在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积。停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。在阻挡层上方添加牺牲金属元素，然后去除衬底。在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

2. 发明授权

US08552458B2 Side by side light emitting diode (LED) having separate electrical and heat transfer paths 有权
标题翻译：具有独立的电和热传递路径的并排发光二极管（LED）
公开(公告)号：US08552458B2
公开(公告)日：2013-10-08
申请号：US12824163
申请日：2010-06-26
申请人： Trung Tri Doan , Chen-Fu Chu , Wen-Huang Liu , Feng-Hsu Fan , Hao-Chun Cheng , Fu-Hsien Wang
发明人： Trung Tri Doan , Chen-Fu Chu , Wen-Huang Liu , Feng-Hsu Fan , Hao-Chun Cheng , Fu-Hsien Wang
IPC分类号： H01L33/02
CPC分类号： H01L33/62 , H01L33/641 , H01L2224/73265 , H01L2933/0066
摘要： A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.
摘要翻译：发光二极管包括具有至少一个电隔离层的导热基板，该隔离层被配置为提供垂直电隔离和从基板的前侧（第一侧）到其后侧（第二侧）穿过基板的热传递路径。发光二极管包括具有贯通互连的阳极和在基板上并排布置的具有通孔互连的阴极。发光二极管还包括安装在阳极和阴极之间的衬底上的LED芯片。一种制造发光二极管的方法包括以下步骤：提供具有电隔离层的导热衬底，在衬底的第一侧经由衬底并排形成阳极通孔和阴极，形成阳极通过在阴极通孔中通过互连在阳极通孔和阴极之间的互连，通过互连将互连和阴极通过互连将衬底从衬底的第二侧延伸到阳极，并将LED芯片安装到与第一侧电连通的第一侧阴极通过互连和阳极通过互连。

3. 外观设计

USD684940S1 LED chip 有权
公开(公告)号：USD684940S1
公开(公告)日：2013-06-25
申请号：US29419104
申请日：2012-04-25
申请人： Chen-Fu Chu , Chao-Chen Cheng , Hao-Chun Cheng
设计人： Chen-Fu Chu , Chao-Chen Cheng , Hao-Chun Cheng

4. 发明申请

US20120025167A1 Vertical Light Emitting Diode (VLED) Die Having Electrode Frame And Method Of Fabrication 有权
标题翻译：具有电极框架的垂直发光二极管（VLED）模具及其制造方法
公开(公告)号：US20120025167A1
公开(公告)日：2012-02-02
申请号：US12845007
申请日：2010-07-28
申请人： Chen-Fu Chu , Feng-Hsu Fan , Hao-Chun Cheng , Trung Tri Doan
发明人： Chen-Fu Chu , Feng-Hsu Fan , Hao-Chun Cheng , Trung Tri Doan
IPC分类号： H01L33/04
CPC分类号： H01L33/38 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/641 , H01L33/647
摘要： A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer. The vertical light emitting diode (VLED) die can also include a passivation layer formed on the metal base surrounding and electrically insulating the electrode frame, the edges of the mirror, the edges of the p-type semiconductor layer, the edges of the multiple quantum well (MQW) layer and the edges of the n-type semiconductor layer.
摘要翻译：垂直发光二极管（VLED）模具包括金属基底; 金属底座上的镜子; 反射层上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。垂直发光二极管（VLED）裸片还包括在n型半导体层上的电极和电极框架，以及包含在电极框架内的有机或无机材料。电极和电极框架被配置为提供高电流容量并且将电流从外周延伸到n型半导体层的中心。垂直发光二极管（VLED）裸片还可以包括形成在金属基底上的钝化层，该钝化层围绕并电绝缘电极框架，反射镜的边缘，p型半导体层的边缘，多个量子的边缘（MQW）层和n型半导体层的边缘。

5. 发明申请

US20110316039A1 VERTICAL LED WITH CURRENT GUIDING STRUCTURE 有权
标题翻译：具有电流导向结构的垂直LED
公开(公告)号：US20110316039A1
公开(公告)日：2011-12-29
申请号：US13161254
申请日：2011-06-15
申请人： WEN-HUANG LIU , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
发明人： WEN-HUANG LIU , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC分类号： H01L33/40
CPC分类号： H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

6. 发明申请

US20100258834A1 VERTICAL LED WITH CURRENT GUIDING STRUCTURE 有权
标题翻译：具有电流导向结构的垂直LED
公开(公告)号：US20100258834A1
公开(公告)日：2010-10-14
申请号：US12823866
申请日：2010-06-25
申请人： WEN-HUANG LIU , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
发明人： WEN-HUANG LIU , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC分类号： H01L33/10 , H01L33/36 , H01L33/60 , H01L33/62
CPC分类号： H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

7. 发明授权

US07524686B2 Method of making light emitting diodes (LEDs) with improved light extraction by roughening 有权
标题翻译：通过粗糙化制造具有改进的光提取的发光二极管（LED）的方法
公开(公告)号：US07524686B2
公开(公告)日：2009-04-28
申请号：US11690443
申请日：2007-03-23
申请人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
发明人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
IPC分类号： H01L21/66
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/08 , H01L33/20
摘要： Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack's n-doped layer. In this manner, light extraction from the LED device is improved.
摘要翻译：提供了通过提供具有LED堆叠的LED晶片组件并选择性地使LED堆叠的n掺杂层的发光表面粗糙化和/或纹理化来制造半导体发光二极管（LED）器件的方法。以这种方式，提高了从LED装置的光提取。

8. 发明申请

US20080194051A1 DIE SEPARATION 有权
标题翻译： DIE分离
公开(公告)号：US20080194051A1
公开(公告)日：2008-08-14
申请号：US11548647
申请日：2006-10-11
申请人： CHEN-FU CHU , TRUNG TRI DOAN , CHUONG ANH TRAN , CHAO-CHEN CHENG , JIUNN-YI CHU , WEN-HUANG LIU , HAO-CHUN CHENG , FENG-HSU FAN , JUI-KANG YEN
发明人： CHEN-FU CHU , TRUNG TRI DOAN , CHUONG ANH TRAN , CHAO-CHEN CHENG , JIUNN-YI CHU , WEN-HUANG LIU , HAO-CHUN CHENG , FENG-HSU FAN , JUI-KANG YEN
IPC分类号： H01L33/00 , H01L21/304
CPC分类号： H01L33/0095 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/50 , H01L21/78 , H01S5/0201 , H01S5/0202 , H01S5/32341
摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件已被去除的底物。

9. 发明申请

US20070166851A1 LIGHT EMITTING DIODES (LEDs) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING 有权
标题翻译：发光二极管（LED），通过粗化改进光提取
公开(公告)号：US20070166851A1
公开(公告)日：2007-07-19
申请号：US11618468
申请日：2006-12-29
申请人： Chuong Tran , Trung Doan , Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan
发明人： Chuong Tran , Trung Doan , Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan
IPC分类号： H01L33/00 , H01L29/24 , H01L21/00
CPC分类号： H01L33/22 , H01L33/0095
摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
摘要翻译：公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

10. 发明授权

US08384088B2 Vertical light emitting diode having an outwardly disposed electrode 有权
标题翻译：垂直发光二极管具有向外设置的电极
公开(公告)号：US08384088B2
公开(公告)日：2013-02-26
申请号：US12939984
申请日：2010-11-04
申请人： Chen-Fu Chu , Wen-Huang Liu , Hao-Chun Cheng
发明人： Chen-Fu Chu , Wen-Huang Liu , Hao-Chun Cheng
IPC分类号： H01L33/32
CPC分类号： H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
摘要翻译：本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

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