专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08792160B2 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08792160B2
公开(公告)日：2014-07-29
申请号：US13614646
申请日：2012-09-13
申请人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
发明人： Rintaro Koda , Hideki Watanabe , Masaru Kuramoto , Shunsuke Kono , Takao Miyajima
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.
摘要翻译：提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c）第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。第一化合物半导体层的厚度大于0.6μm。在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。

62. 发明授权

US08786941B2 Semiconductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US08786941B2
公开(公告)日：2014-07-22
申请号：US13166900
申请日：2011-06-23
申请人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人： Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号： H01S5/00
CPC分类号： H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译：半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。层叠结构具有脊形条纹结构。当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。

63. 发明申请

US20120201259A1 SUBMOUNT, SUBMOUNT ASSEMBLY, AND SUBMOUNT ASSEMBLING METHOD 有权
标题翻译： SUBMOUNT，SUBMOUNT ASSEMBLY和SUBMOUNT组装方法
公开(公告)号：US20120201259A1
公开(公告)日：2012-08-09
申请号：US13364957
申请日：2012-02-02
申请人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
发明人： Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Kaori Naganuma , Hiroyuki Yokoyama
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译：提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。

64. 发明申请

US20120147917A1 LASER DIODE DEVICE 有权
标题翻译：激光二极管器件
公开(公告)号：US20120147917A1
公开(公告)日：2012-06-14
申请号：US13310260
申请日：2011-12-02
申请人： Tomoyuki Oki , Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Hideki Watanabe , Rintaro Koda , Masaru Kuramoto , Hiroyuki Yokoyama
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/06253 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/141 , H01S5/22
摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1
摘要翻译：激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一电极。层叠结构具有脊状结构。将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1

65. 发明申请

US20110103420A1 Laser diode 有权
标题翻译：激光二极管
公开(公告)号：US20110103420A1
公开(公告)日：2011-05-05
申请号：US12923637
申请日：2010-09-30
申请人： Rintaro Koda , Yusuke Nakayama
发明人： Rintaro Koda , Yusuke Nakayama
IPC分类号： H01S5/323
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/0014 , H01S5/0208 , H01S5/18358 , H01S5/18369 , H01S5/3202 , H01S5/34333 , H01S5/423
摘要： A laser diode with which high density crystal defect and surface roughness are able to be inhibited from being generated is provided. The laser diode includes a laminated body including an active layer and a current narrowing layer on a substrate. The substrate is an inclined substrate having an off-angle larger than 0 degrees in the direction of [1-100] from (0001) C plane.
摘要翻译：提供了能够抑制高密度晶体缺陷和表面粗糙度的激光二极管的产生。激光二极管包括在基板上包括有源层和电流变窄层的层叠体。衬底是从（0001）C平面沿[1-100]方向偏离角度大于0度的倾斜衬底。

66. 发明申请

US20110103419A1 OPTICAL DEVICE 审中-公开
标题翻译：光学装置
公开(公告)号：US20110103419A1
公开(公告)日：2011-05-05
申请号：US12910046
申请日：2010-10-22
申请人： Rintaro Koda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
发明人： Rintaro Koda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama , Tomoyuki Oki , Masaru Kuramoto
IPC分类号： H01S5/00 , H01S3/02 , H01S3/08
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0021 , H01S5/005 , H01S5/02212 , H01S5/02288 , H01S5/028 , H01S5/0655 , H01S5/1014 , H01S5/1085 , H01S5/14 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S5/4006
摘要： The present invention provides an optical device capable of suppressing a drive current and an optical output to be varied with a passage of the time. The optical device includes: an optical element including a first end face and a second end face, and emitting light having a wavelength from 300 nm to 600 nm both inclusive at least from the second end face in the first end face and the second end face; a pedestal including a supporting substrate supporting the optical element, and a connecting terminal electrically connected to the optical element; and a sealing section including a light transmitting window in each of a portion facing the first end face and a portion facing the second end face, and sealing the optical element.
摘要翻译：本发明提供能够抑制驱动电流和光输出随着时间的推移而变化的光学装置。光学装置包括：光学元件，包括第一端面和第二端面，并且至少从第一端面中的第二端面和第二端面发射波长为300nm至600nm的光， ; 包括支撑所述光学元件的支撑基板的基座和与所述光学元件电连接的连接端子; 以及密封部，其包括在面向所述第一端面的部分中的每一个中的透光窗口和面向所述第二端面的部分，并且密封所述光学元件。

67. 发明申请

US20100080107A1 METHOD FOR PRODUCING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, AND OPTICAL DISK DRIVE 有权
标题翻译：生产半导体激光，半导体激光，光学拾取和光盘驱动的方法
公开(公告)号：US20100080107A1
公开(公告)日：2010-04-01
申请号：US12568855
申请日：2009-09-29
申请人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
发明人： Rintaro Koda , Masaru Kuramoto , Eiji Nakayama , Tsuyoshi Fujimoto
IPC分类号： G11B7/00 , H01L33/00 , H01S5/16 , H01S5/028
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译：一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域，以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式