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    • 65. 发明申请
    • Enhanced microwave multiplexing network
    • 增强型微波复用网络
    • US20070188263A1
    • 2007-08-16
    • US11350806
    • 2006-02-10
    • Ming YuYing Wang
    • Ming YuYing Wang
    • H01P1/213
    • H01P1/2138
    • A method for configuring a microwave multiplexing network having a first channel filter and a second channel filter and an interconnect in order to improve channel performance. The top ends of the first and second channel filters are coupled to the closer of the top and bottom surfaces of the interconnect according to interconnect spacing values and filter to interconnect values. Interconnect values and filter to interconnect values are determined by selecting interconnect spacing values and filter to interconnect values to ensure that a pole is formed causing an additional real reflection zero to be brought into the passband of the microwave multiplexing network thereby increasing the filter order by one. Then interconnect spacing values and filter to interconnect values as well as the internal filter dimensions are selected to ensure that the return loss of the microwave multiplexing network is less than a predetermined return loss level.
    • 一种用于配置具有第一信道滤波器和第二信道滤波器以及互连的微波复用网络的方法,以便改善信道性能。 第一和第二通道滤波器的顶端根据互连间隔值和滤波器耦合到互连的顶表面和底表面的更靠近互连值。 通过选择互连间隔值和过滤器来互连值来确定互连值和滤波器的互连值,以确保形成极点,从而使额外的实际反射零点进入微波复用网络的通带,从而将滤波器顺序增加一个 。 然后将间隔值和滤波器互连到互连值,并且选择内部滤波器尺寸以确保微波复用网络的回波损耗小于预定的回波损耗水平。
    • 66. 发明申请
    • Organic electronic device having dual emitter dopants
    • 具有双重发射体掺杂剂的有机电子器件
    • US20070145360A1
    • 2007-06-28
    • US11644491
    • 2006-12-22
    • Ying Wang
    • Ying Wang
    • H01L29/08
    • H01L51/5012H01L51/0081H01L51/0085
    • Electronic devices comprising an anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, and cathode are provided, where the photoactive layer comprises a dual dopant in a metallic complex. The dopants are selected so that their emitting wavelengths are essentially the same, while their ionization potentials and electron affinities are substantially different. The dual dopant device allows for tuning the ionization potential of one dopant to enhance hole injection and/or minimize hole trapping, while independently tuning the electron affinity of the other dopant to enhance electron injection and/or minimize electron trapping.
    • 提供了包括阳极,缓冲层,空穴传输层,光敏层,电子传输层,电子注入层和阴极的电子器件,其中光活性层包含金属络合物中的双重掺杂剂。 选择掺杂剂使得其发射波长基本相同,而它们的电离电位和电子亲和力基本上不同。 双掺杂器件允许调谐一种掺杂剂的电离电位以增强空穴注入和/或最小化空穴俘获,同时独立地调整另一种掺杂剂的电子亲和力以增强电子注入和/或最小化电子俘获。