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    • 63. 发明授权
    • Low contamination blending and metering systems for semiconductor
processing
    • 用于半导体加工的低污染混合和计量系统
    • US5085560A
    • 1992-02-04
    • US464101
    • 1990-01-12
    • Raymon F. ThompsonAleksander Owczarz
    • Raymon F. ThompsonAleksander Owczarz
    • B01F3/08F04B9/105F04B43/08H01L21/00
    • H01L21/67023B01F3/088F04B43/08F04B9/105
    • Blending and pumping systems for accurately delivering desired amounts of processing fluids, particularly for use in semiconductor processing and semiconductor processors. Thee blending systems include one or more supply tanks from which a processing fluid is accurately pumped using the novel metering pump and associated pumping and blending methods. The blending systems preferably include a recycle line which includes a control valve which is controlled to recycle process fluid during an initial startup period. The outflow from the pump is preferably totally recycled during this startup period by blocking flow of process fluid to the blending container. The metering pump includes a pump housing having a pumping chamber which is partially defined by a displacement member, such as a flexible bellows structure. The pumping chamber is isolated from inlet and outlet via inlet and outlet valves, respectively. The inlet and outlet valves are positively controlled into open and closed positions using a control system which preferably includes an elctronic controller. The controller appropriately sequences the operation of the pump inlet and outlet valves relative to a displacement member actuator which drives the displacement member. The control is preferably accomplished by using electrically operated solenoid valves which control the flow of an intermediary control fluid, such as air or other suitable gas. The invention further includes methods of blending and pumping to provide accurate and low contamination of the process fluids being metered.
    • 用于精确输送所需量的处理流体的混合和泵送系统,特别是用于半导体处理和半导体处理器。 您的混合系统包括一个或多个供应罐,使用新颖的计量泵以及相关联的泵送和混合方法,精确地泵送处理流体。 混合系统优选地包括循环管线,其包括控制阀,控制阀在初始启动期间被控制以再循环过程流体。 泵的流出优选在该启动期间通过阻止加工流体流入混合容器而完全再循环。 计量泵包括具有泵送室的泵壳体,该泵室部分地由位移构件限定,例如柔性波纹管结构。 泵送室分别通过入口和出口阀从入口和出口隔离。 使用优选包括电子控制器的控制系统将入口和出口阀积极地控制到打开和关闭位置。 控制器适当地排列泵入口和出口阀相对于驱动位移构件的位移构件致动器的操作。 该控制优选通过使用控制中间控制流体(例如空气或其它合适气体)的流动的电动电磁阀来实现。 本发明还包括混合和泵送的方法,以提供准确和低污染待测量的工艺流体。
    • 66. 发明授权
    • Method and apparatus for real time metal film thickness measurement
    • 用于实时金属膜厚度测量的方法和装置
    • US07309618B2
    • 2007-12-18
    • US10463525
    • 2003-06-18
    • Yehiel GotkisRodney KistlerAleksander OwczarzDavid HemkerNicolas J. Bright
    • Yehiel GotkisRodney KistlerAleksander OwczarzDavid HemkerNicolas J. Bright
    • H01L21/00
    • B24B37/013B24B1/005B24B49/105B24B57/02H01L21/67253
    • A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.
    • 提供半导体处理系统。 半导体处理系统包括:第一传感器,被配置为隔离和测量具有设置在基板上的膜的晶片的膜厚度信号部分。 第二传感器被配置为在处理期间,即在实际工艺条件下和实时地在原位检测膜厚依赖信号。 控制器,被配置为从第一传感器接收信号和来自第二传感器的信号。 控制器能够根据来自第一传感器的信号表示的数据确定校准系数。 控制器能够将校准系数应用于与第二传感器相关联的数据,其中校准系数基本上消除了从衬底引入与膜厚度相关的信号的不准确性。 还提供了用于校准涡流传感器的方法。
    • 70. 发明授权
    • Chemical mechanical planarization (CMP) apparatus
    • 化学机械平面化(CMP)装置
    • US06769961B1
    • 2004-08-03
    • US10345694
    • 2003-01-15
    • Rodney C. KistlerAleksander Owczarz
    • Rodney C. KistlerAleksander Owczarz
    • B24B4900
    • B24B37/013B24B37/26B24B57/02
    • A chemical mechanical planarization (CMP) apparatus includes a bath of an aqueous solution. A first holder, which is configured to support a wafer, is disposed within the bath. A first spindle is configured to rotate the first holder. A second holder, which is rotated by a second spindle, is disposed above the first holder. The second holder supports a planarization media, which is disposed within the bath. The planarization media is oriented to face the surface of the first holder on which the wafer is to be supported. The planarization media can be a pad containing polyurethane or a substrate having an overlying abrasive film. The CMP apparatus also can include a system for recirculating and reconditioning the aqueous solution. A method for performing a CMP process also is described.
    • 化学机械平面化(CMP)装置包括水溶液浴。 被配置为支撑晶片的第一保持器设置在浴槽内。 第一主轴构造成旋转第一保持器。 由第二主轴旋转的第二保持器设置在第一保持器的上方。 第二支架支撑设置在浴槽内的平坦化介质。 平面化介质被定向为面对要在其上支撑晶片的第一保持器的表面。 平坦化介质可以是含有聚氨酯的垫或具有上覆磨料膜的基材。 CMP设备还可以包括用于再循环和修复水溶液的系统。 还描述了用于执行CMP处理的方法。