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    • 63. 发明授权
    • Semiconductor processor methods
    • 半导体处理器方法
    • US5221360A
    • 1993-06-22
    • US893585
    • 1992-06-02
    • Raymon F. ThompsonAleksander Owczarz
    • Raymon F. ThompsonAleksander Owczarz
    • B08B3/02H01L21/00
    • H01L21/67028B08B3/02Y10S134/902
    • Rinser dryer system for rising process chemical from silicon or gallium arsenide wafers, substrates, masks or disks and drying of silicon or gallium arsenide wafers, substrates, masks or disks positioned in a wafer cassette. A wafer cassette is positioned in a rotor assembly and the rotor assembly positioned within a removable heated chamber bowl. The wafer cassette rotates past rising and drying manifold nozzles. The removable chamber bowl is secured to a rinser dryer mounting plate by quick disconnect hardware for removal and for external cleansing. A broken chip collector in a lower portion of an exhaust manifold assembly removes small broken chip remains. An acidity sensor is positioned in a bottom portion of the exhaust manifold assembly for monitoring rinse effluent during the rising process. A gated exhaust valve in an exhaust gas manifold of the exhaust manifold assembly provides for gases to exhaust to an external location. A computer controls cycling of the process modes as the silicon or gallium arsenide wafers, substrates, masks or disks are sprayed, washed, rinsed, and dried.
    • 用于从硅或砷化镓晶片,衬底,掩模或盘上升过程化学品的Rinser干燥器系统以及位于晶片盒中的硅或砷化镓晶片,衬底,掩模或盘的干燥。 晶片盒位于转子组件中,转子组件位于可移除的加热室碗内。 晶片盒经过上升和干燥的歧管喷嘴旋转。 可拆卸的室碗通过快速拆卸硬件固定到洗衣机烘干机安装板上,用于去除和外部清洁。 在排气歧管组件的下部的破碎的芯片收集器去除小的破碎的芯片残留物。 酸度传感器位于排气歧管组件的底部,用于在上升过程中监测冲洗流出物。 排气歧管组件的废气歧管中的门控排气阀提供气体排放到外部位置。 当喷射,洗涤,冲洗和干燥硅或砷化镓晶片,基底,掩模或盘时,计算机控制过程模式的循环。
    • 66. 发明授权
    • Method and apparatus for real time metal film thickness measurement
    • 用于实时金属膜厚度测量的方法和装置
    • US07309618B2
    • 2007-12-18
    • US10463525
    • 2003-06-18
    • Yehiel GotkisRodney KistlerAleksander OwczarzDavid HemkerNicolas J. Bright
    • Yehiel GotkisRodney KistlerAleksander OwczarzDavid HemkerNicolas J. Bright
    • H01L21/00
    • B24B37/013B24B1/005B24B49/105B24B57/02H01L21/67253
    • A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.
    • 提供半导体处理系统。 半导体处理系统包括:第一传感器,被配置为隔离和测量具有设置在基板上的膜的晶片的膜厚度信号部分。 第二传感器被配置为在处理期间,即在实际工艺条件下和实时地在原位检测膜厚依赖信号。 控制器,被配置为从第一传感器接收信号和来自第二传感器的信号。 控制器能够根据来自第一传感器的信号表示的数据确定校准系数。 控制器能够将校准系数应用于与第二传感器相关联的数据,其中校准系数基本上消除了从衬底引入与膜厚度相关的信号的不准确性。 还提供了用于校准涡流传感器的方法。
    • 70. 发明授权
    • Chemical mechanical planarization (CMP) apparatus
    • 化学机械平面化(CMP)装置
    • US06769961B1
    • 2004-08-03
    • US10345694
    • 2003-01-15
    • Rodney C. KistlerAleksander Owczarz
    • Rodney C. KistlerAleksander Owczarz
    • B24B4900
    • B24B37/013B24B37/26B24B57/02
    • A chemical mechanical planarization (CMP) apparatus includes a bath of an aqueous solution. A first holder, which is configured to support a wafer, is disposed within the bath. A first spindle is configured to rotate the first holder. A second holder, which is rotated by a second spindle, is disposed above the first holder. The second holder supports a planarization media, which is disposed within the bath. The planarization media is oriented to face the surface of the first holder on which the wafer is to be supported. The planarization media can be a pad containing polyurethane or a substrate having an overlying abrasive film. The CMP apparatus also can include a system for recirculating and reconditioning the aqueous solution. A method for performing a CMP process also is described.
    • 化学机械平面化(CMP)装置包括水溶液浴。 被配置为支撑晶片的第一保持器设置在浴槽内。 第一主轴构造成旋转第一保持器。 由第二主轴旋转的第二保持器设置在第一保持器的上方。 第二支架支撑设置在浴槽内的平坦化介质。 平面化介质被定向为面对要在其上支撑晶片的第一保持器的表面。 平坦化介质可以是含有聚氨酯的垫或具有上覆磨料膜的基材。 CMP设备还可以包括用于再循环和修复水溶液的系统。 还描述了用于执行CMP处理的方法。