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61. 发明授权

US07135728B2 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US07135728B2
公开(公告)日：2006-11-14
申请号：US11106340
申请日：2005-04-13
申请人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence A. Bock , David P. Stumbo , Parce J. Wallace , Jay L. Goldman
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

62. 发明授权

US06579735B1 Method for fabricating GaN field emitter arrays 有权
标题翻译：制造GaN场发射极阵列的方法
公开(公告)号：US06579735B1
公开(公告)日：2003-06-17
申请号：US09998336
申请日：2001-12-03
申请人： Linda T. Romano , David K. Biegelsen
发明人： Linda T. Romano , David K. Biegelsen
IPC分类号： H01L2100
CPC分类号： H01J1/3042 , H01J9/025
摘要： An improved nanotip structure and method for forming the nanotip structure and a display system using the improved nanotip structure is described. The described nanotip is formed from a semiconductor having a crystalline structure such as gallium nitride. The crystalline structure preferably forms dislocations oriented in the direction of the nanotips. One method of forming the nanotip structure uses the relatively slow etching rates that occur around the dislocations compared to the faster etch rates that occur in other parts of the semiconductor structure. The slower etching around dislocations enables the formation of relatively high aspect ratio nanotips in the dislocation area.
摘要翻译：描述了用于形成纳米尖端结构的改进的纳米尖端结构和方法以及使用改进的纳米尖端结构的显示系统。所描述的纳米尖端由具有诸如氮化镓的晶体结构的半导体形成。晶体结构优选地形成在纳米尖端方向上取向的位错。与在半导体结构的其它部分中发生的更快的蚀刻速率相比，形成纳米尖端结构的一种方法使用在位错周围发生的相对慢的蚀刻速率。在位错周围较慢的蚀刻使得能够在位错区域中形成相对高的纵横比的纳米尖端。

63. 发明授权

US06163557A Fabrication of group III-V nitrides on mesas 失效
标题翻译：在台面上制备III-V族氮化物
公开(公告)号：US06163557A
公开(公告)日：2000-12-19
申请号：US82154
申请日：1998-05-21
申请人： Clarence J. Dunnrowicz , Linda T. Romano , David P. Bour
发明人： Clarence J. Dunnrowicz , Linda T. Romano , David P. Bour
IPC分类号： C30B25/02 , H01L21/20 , H01L33/00 , H01S5/02 , H01S5/323 , H01L31/0312 , H01S5/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/3202 , H01S5/32341
摘要： Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes.
摘要翻译： III-V族氮化物薄膜制造在图案化的基板上，例如蓝宝石衬底上，或者在生长在衬底上的III-V族氮化物层上图案化的台面上。台面为外延生长的III-V族氮化物薄膜提供减少的面积表面，以减少薄膜中的热薄膜应力以减少开裂。其上生长膜的台面的表面的尺寸和尺寸被定向以减少可以在台面上生长的薄膜裂纹平面的数量。膜的进一步裂解减少可以通过使基材变薄以形成膜来实现。在薄膜处降低的基底厚度降低了薄膜中的热膨胀失配拉伸应力。台面可以减少或消除在台面上生长的GaN或AlGaN外延膜中的裂纹的发生，AlGaN膜中铝的百分比高达约18％。改进的III-V族III族氮化物薄膜可用于包括LED和边缘和表面发射激光二极管在内的光电器件。

64. 发明授权

US09911896B2 Semiconductor light emitting device growing active layer on textured surface 有权
公开(公告)号：US09911896B2
公开(公告)日：2018-03-06
申请号：US12830885
申请日：2010-07-06
申请人： Sungsoo Yi , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
发明人： Sungsoo Yi , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
IPC分类号： H01L33/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.

65. 发明申请

US20120309172A1 Epitaxial Lift-Off and Wafer Reuse 审中-公开
标题翻译：外延提升和晶圆再利用
公开(公告)号：US20120309172A1
公开(公告)日：2012-12-06
申请号：US13118900
申请日：2011-05-31
申请人： Linda T. Romano , David P. Bour , Richard J. Brown , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Thomas R. Prunty
发明人： Linda T. Romano , David P. Bour , Richard J. Brown , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Thomas R. Prunty
IPC分类号： H01L21/20
CPC分类号： H01L21/2654 , H01L21/02002 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02664 , H01L33/0079
摘要： A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer.
摘要翻译：根据本发明的实施例的重新使用III族氮化物生长衬底的方法包括在III族氮化物衬底上外延生长III族氮化物半导体结构。 III族氮化物半导体结构包括在牺牲层上生长的牺牲层和附加层。牺牲层植入至少一种植入物种。在注入的牺牲层处将III族氮化物衬底与附加层分离。在一些实施例中，III族氮化物衬底是GaN，牺牲层是GaN，含铝的III族氮化物层或含铟的III族氮化物层。在一些实施例中，通过蚀刻注入的牺牲层将III族氮化物衬底与附加层分离。

66. 发明授权

US08030186B2 Large-area nanoenabled macroelectronic substrates and uses therefor 有权
公开(公告)号：US08030186B2
公开(公告)日：2011-10-04
申请号：US12940789
申请日：2010-11-05
申请人： Linda T. Romano , Jian Chen
发明人： Linda T. Romano , Jian Chen
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/78696 , B82Y10/00 , B82Y25/00 , H01F1/0072 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/08 , H01L33/18 , H01L35/26 , H01L35/32 , H01L41/082 , H01L41/18 , H01L41/316 , H01L51/0012 , H01L51/0048 , H01L51/0504 , H01L51/0508 , H01L51/0545 , H01L51/0595 , Y02E10/549
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

67. 发明授权

US07951422B2 Methods for oriented growth of nanowires on patterned substrates 有权
标题翻译：在图案化衬底上纳米线定向生长的方法
公开(公告)号：US07951422B2
公开(公告)日：2011-05-31
申请号：US11641939
申请日：2006-12-20
申请人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , David P. Stumbo , Alice Fischer-Colbrie , Vijendra Sahi , Virginia Robbins
发明人： Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , David P. Stumbo , Alice Fischer-Colbrie , Vijendra Sahi , Virginia Robbins
IPC分类号： C23C16/00
CPC分类号： C30B29/605 , B82Y30/00 , C30B11/12 , C30B29/06 , Y10T428/24917
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译：本发明涉及用于纳米线生长和收获的系统和方法。在一个实施例中，提供了用于纳米线生长和掺杂的方法，包括使用硅前体的组合的外延取向纳米线生长的方法，以及我们用于生长取向的纳米线的图案化衬底。在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

68. 发明授权

US07871870B2 Method of fabricating gate configurations for an improved contacts in nanowire based electronic devices 有权
标题翻译：制造基于纳米线的电子器件中改进接触的栅极配置的方法
公开(公告)号：US07871870B2
公开(公告)日：2011-01-18
申请号：US12703043
申请日：2010-02-09
申请人： Shahriar Mostarshed , Jian Chen , Francisco A. Leon , Yaoling Pan , Linda T. Romano
发明人： Shahriar Mostarshed , Jian Chen , Francisco A. Leon , Yaoling Pan , Linda T. Romano
IPC分类号： H01L21/00 , H01L27/108
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42384 , H01L29/42392 , H01L29/775 , H01L29/785 , H01L29/78645 , H01L29/78681 , H01L29/7869 , Y10S977/762 , Y10S977/932 , Y10S977/938
摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.
摘要翻译：描述了具有改进的门结构的电子设备的方法，系统和装置。电子装置包括至少一个纳米线。栅极接触沿至少一个纳米线的长度的至少一部分定位。介电材料层在栅极接触和至少一个纳米线之间。源极触点和漏极触点与至少一个纳米线接触。源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。环形第一栅极区域沿着纳米线长度的一部分包围纳米线。第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

69. 发明授权

US07795125B2 System and process for producing nanowire composites and electronic substrates therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基材的系统和工艺
公开(公告)号：US07795125B2
公开(公告)日：2010-09-14
申请号：US12274904
申请日：2008-11-20
申请人： Mihai A. Buretea , Jian Chen , Calvin Y. H. Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David P. Stumbo
发明人： Mihai A. Buretea , Jian Chen , Calvin Y. H. Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David P. Stumbo
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

70. 发明授权

US07754524B2 Methods, devices and compositions for depositing and orienting nanostructures 有权
公开(公告)号：US07754524B2
公开(公告)日：2010-07-13
申请号：US11226027
申请日：2005-09-14
申请人： Robert S. Dubrow , Linda T. Romano , David P. Stumbo
发明人： Robert S. Dubrow , Linda T. Romano , David P. Stumbo
IPC分类号： H01L51/40
CPC分类号： H01L21/02422 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02656 , Y10S977/762 , Y10S977/827
摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

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