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1. 发明申请

US20180006255A1 LIGHT DETECTOR 审中-公开
公开(公告)号：US20180006255A1
公开(公告)日：2018-01-04
申请号：US15613180
申请日：2017-06-03
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： JIN ZHANG , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01L51/42 , H01L51/05 , H01L51/00 , B82Y20/00 , B82Y10/00 , B82Y40/00 , C30B33/00 , C30B29/46
CPC分类号： H01L51/4213 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C22C26/00 , C22C2026/002 , C30B29/46 , C30B33/00 , H01L51/0012 , H01L51/0026 , H01L51/0048 , H01L51/0562 , Y02E10/549 , Y10S977/75 , Y10S977/827 , Y10S977/842 , Y10S977/938 , Y10S977/954
摘要： The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

2. 发明申请

US20100171093A1 Controlled Growth of a Nanostructure on a Substrate, and Electron Emission Devices Based on the Same 有权
标题翻译：基体上的纳米结构的控制生长和基于相同的电子发射器件
公开(公告)号：US20100171093A1
公开(公告)日：2010-07-08
申请号：US12725373
申请日：2010-03-16
申请人： Mohammad Shafiqul Kabir
发明人： Mohammad Shafiqul Kabir
IPC分类号： H01L29/66 , H01L33/00
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.
摘要翻译：本发明提供在导电基底上生长的纳米结构的阵列。如本文提供的纳米结构阵列适用于制造诸如电子束写入器和场致发射器件的电子器件。

3. 发明授权

US07563507B2 Pyridine and related ligand compounds, functionalized nanoparticulate composites and methods of preparation 失效
标题翻译：吡啶和相关配体化合物，官能化纳米颗粒复合材料及其制备方法
公开(公告)号：US07563507B2
公开(公告)日：2009-07-21
申请号：US10643015
申请日：2003-08-18
申请人： Todd S. Emrick , Habib Skaff
发明人： Todd S. Emrick , Habib Skaff
IPC分类号： B32B1/00 , B32B15/04 , C09K11/00
CPC分类号： C08K9/04 , C08G63/912 , Y10S977/773 , Y10S977/774 , Y10S977/81 , Y10S977/813 , Y10S977/825 , Y10S977/827 , Y10T428/2982
摘要： Nanoparticulate composites and dispersion thereof using novel polymeric ligand compounds, in certain embodiments in conjunction with pyridinyl moieties coupling the nanoparticulate and ligand.
摘要翻译：在某些实施方案中，使用新型聚合物配体化合物与纳米颗粒和配体偶联的吡啶基部分结合使用纳米微粒复合材料及其分散体。

4. 发明申请

US20080168943A1 HETEROSTRUCTURE SEMICONDUCTOR NANOWIRES AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：异构半导体纳米微粒及其制造方法
公开(公告)号：US20080168943A1
公开(公告)日：2008-07-17
申请号：US11835778
申请日：2007-08-08
申请人： Eun Joo Jang , Shin Ae Jun
发明人： Eun Joo Jang , Shin Ae Jun
IPC分类号： C30B19/00
CPC分类号： C30B7/00 , C30B29/40 , C30B29/46 , C30B29/48 , C30B29/605 , Y10S977/718 , Y10S977/768 , Y10S977/773 , Y10S977/784 , Y10S977/79 , Y10S977/827
摘要： Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires.
摘要翻译：本文公开了异质结构半导体纳米线。异质结构半导体纳米线包括从半导体纳米晶种子的表面沿选定方向生长的半导体纳米晶种子和半导体纳米晶体线，其中半导体纳米晶种与半导体纳米晶体线的组成不同。进一步公开了用于制造异质结构半导体纳米线的方法。

5. 发明申请

US20050066883A1 Methods, devices and compositions for depositing and orienting nanostructures 有权
标题翻译：用于沉积和取向纳米结构的方法，装置和组合物
公开(公告)号：US20050066883A1
公开(公告)日：2005-03-31
申请号：US10673092
申请日：2003-09-25
申请人： Robert Dubrow , Linda Romano , David Stumbo
发明人： Robert Dubrow , Linda Romano , David Stumbo
IPC分类号： B82B20060101 , C30B7/00 , C30B21/02 , C30B28/06 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02422 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02656 , Y10S977/762 , Y10S977/827
摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.
摘要翻译：用于将纳米材料沉积到接收衬底上并且任选地用于以期望取向沉积那些材料的方法和系统，其包括在转移衬底上提供纳米材料并使纳米材料与设置在接收衬底的表面或表面的部分上的粘附材料接触。可选地通过在传送过程中相对于彼此移动传送和接收基板来提供取向。

6. 发明授权

US06603206B2 Slot via filled dual damascene interconnect structure without middle etch stop layer 有权
标题翻译：通过填充的双镶嵌互连结构的槽，没有中间蚀刻停止层
公开(公告)号：US06603206B2
公开(公告)日：2003-08-05
申请号：US10105509
申请日：2002-03-26
申请人： Fei Wang , Lynne A. Okada , Ramkumar Subramanian , Calvin T. Gabriel
发明人： Fei Wang , Lynne A. Okada , Ramkumar Subramanian , Calvin T. Gabriel
IPC分类号： H01L23522
CPC分类号： H01L21/76835 , H01L21/76808 , H01L2221/1031 , Y10S977/827
摘要： An interconnect structure and method of forming the same in which a bottom anti-reflective coating/etch stop layer is deposited over a conductive layer. An inorganic low k dielectric material is deposited over the BARC/etch stop layer to form a first dielectric layer. The first dielectric layer is etched to form a slot via in the first dielectric layer. An organic low k dielectric material is deposited within the slot via and over the first dielectric layer to form a second dielectric layer over the slot via and the first dielectric layer. The re-filled via is simultaneously etched with the second dielectric layer in which a trench is formed. The trench extends in a direction that is normal to the length of the slot via. The entire width of the trench is directly over the via. The re-opened via and the trench are filled with a conductive material.
摘要翻译：一种互连结构及其形成方法，其中底部抗反射涂层/蚀刻停止层沉积在导电层上。无机低k介电材料沉积在BARC /蚀刻停止层上以形成第一介电层。蚀刻第一介电层以在第一介电层中形成槽通孔。有机低k电介质材料通过第一电介质层和第一介电层上方沉积在槽内，以在槽通孔和第一介电层上形成第二电介质层。再次填充的通孔与其中形成沟槽的第二电介质层同时蚀刻。沟槽沿与槽通孔的长度垂直的方向延伸。沟槽的整个宽度直接在通孔上方。重新打开的通孔和沟槽填充有导电材料。

7. 发明授权

US6150536A Dye doped organic-inorganic hybrid materials 失效
标题翻译：染料掺杂有机 - 无机杂化材料
公开(公告)号：US6150536A
公开(公告)日：2000-11-21
申请号：US350429
申请日：1999-07-08
申请人： Konstantinos Chondroudis , David Brian Mitzi
发明人： Konstantinos Chondroudis , David Brian Mitzi
IPC分类号： H01L51/50 , C07D333/18 , C07D409/14 , C09K11/06 , H05B33/14 , C07F7/24 , B32B7/02 , C07D413/00
CPC分类号： C07D409/14 , C07D333/18 , Y10S977/783 , Y10S977/827 , Y10S977/95 , Y10T428/24942
摘要： The present invention relates to an organic-inorganic hybrid material comprising an organic component and an inorganic component. The organic component comprises a dye that fluoresces in the visible range. In addition, an optically inert component may replace a portion of the organic dye component to increase fluorescence.
摘要翻译：本发明涉及包含有机组分和无机组分的有机 - 无机混合材料。有机组分包括在可见光范围发荧光的染料。此外，光学惰性组分可以代替一部分有机染料组分以增加荧光。

8. 发明授权

US08877284B2 Method for making a flexible and clear low surface electric resistance plastics material article of manufacture and the plastics material article made thereby 有权
标题翻译：制造柔性清晰的低表面电阻塑料材料制品及其制造的塑料制品的方法
公开(公告)号：US08877284B2
公开(公告)日：2014-11-04
申请号：US12799869
申请日：2010-05-04
申请人： Gabriele Marcolongo , Moreno Meneghetti
发明人： Gabriele Marcolongo , Moreno Meneghetti
IPC分类号： H01B1/24 , H01L51/00 , B82Y40/00 , C08J7/06 , B29K105/16
CPC分类号： H01B1/24 , B29K2105/167 , C08J7/06 , C08J2327/12 , Y10S977/742 , Y10S977/753 , Y10S977/778 , Y10S977/827
摘要： A method for making a flexible and clear plastics material article of manufacture having a low electric surface resistance, starting from a plastics material having a higher electric surface resistance, in which the electric surface conductivity of the starting article of manufacture is modified by partially including, into at least a portion of the outer surface of the article, carbon nanotubes.With respect to conventional methods, the inventive method allows to modify the starting plastics material electric surface resistance so as to lower it to values smaller than 102 kΩ/sq, even starting from articles having a higher resistance of the order of 1013 kΩ/sq, while preserving the starting clearness and flexibility thereof.
摘要翻译：一种制造具有低电表面电阻的柔性和透明的塑料制品制造方法，从具有较高电表面电阻的塑料材料开始，其中起始制品的电表面电导率通过部分包括，进入制品的外表面的至少一部分，碳纳米管。对于常规方法，本发明的方法允许改变起始塑料材料的电表面电阻，从而将其降低到小于102kΩ/ cm2的值，甚至从具有较高电阻值为1013kΩ/ sq，同时保持起始的清晰度和灵活性。

9. 发明申请

US20120196401A1 Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography 有权
标题翻译：纳米/微丝太阳能电池由纳米/微球光刻制成
公开(公告)号：US20120196401A1
公开(公告)日：2012-08-02
申请号：US13445101
申请日：2012-04-12
申请人： William Graham , Supratik Guha , Oki Gunawan , George S. Tulevski , Kejia Wang , Ying Zhang
发明人： William Graham , Supratik Guha , Oki Gunawan , George S. Tulevski , Kejia Wang , Ying Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/035227 , Y10S977/813 , Y10S977/827
摘要： Techniques for fabricating nanowire/microwire-based solar cells are provided. In one, a method for fabricating a solar cell is provided. The method includes the following steps. A doped substrate is provided. A monolayer of spheres is deposited onto the substrate. The spheres include nanospheres, microspheres or a combination thereof. The spheres are trimmed to introduce space between individual spheres in the monolayer. The trimmed spheres are used as a mask to pattern wires in the substrate. The wires include nanowires, microwires or a combination thereof. A doped emitter layer is formed on the patterned wires. A top contact electrode is deposited over the emitter layer. A bottom contact electrode is deposited on a side of the substrate opposite the wires.
摘要翻译：提供了制造纳米线/微丝基太阳能电池的技术。其中，提供了太阳能电池的制造方法。该方法包括以下步骤。提供掺杂的衬底。单层球体沉积在基材上。球体包括纳米球，微球或其组合。球体被修剪以在单层中的单个球体之间引入空间。修剪的球体用作掩模以在基底中图案线。电线包括纳米线，微丝或其组合。在图案化的导线上形成掺杂的发射极层。顶部接触电极沉积在发射极层上。底部接触电极沉积在与电线相对的基板的一侧上。

10. 发明授权

US07977761B2 Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same 有权
标题翻译：基板上的纳米结构的受控生长和基于其的电子发射器件
公开(公告)号：US07977761B2
公开(公告)日：2011-07-12
申请号：US12725373
申请日：2010-03-16
申请人： Mohammad Shafiqul Kabir
发明人： Mohammad Shafiqul Kabir
IPC分类号： H01L27/095
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device.
摘要翻译：本发明提供在导电基底上生长的纳米结构的阵列。如本文提供的纳米结构阵列适用于制造诸如电子束写入器和场致发射器件的电子器件。

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