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1. 发明申请

US20120025169A1 NANOSTRUCTURE ARRAY TRANSISTOR 审中-公开
标题翻译：纳米结构阵列晶体管
公开(公告)号：US20120025169A1
公开(公告)日：2012-02-02
申请号：US12848722
申请日：2010-08-02
申请人： Danny E. Mars , James C. Kim , Sungsoo Yi
发明人： Danny E. Mars , James C. Kim , Sungsoo Yi
IPC分类号： H01L29/775 , H01L21/336 , H01L29/737
CPC分类号： H01L29/732 , B82Y10/00 , H01L29/0676 , H01L29/068 , H01L29/2003 , H01L29/6631 , H01L29/66318 , H01L29/66462 , H01L29/66469 , H01L29/66856 , H01L29/7371 , H01L29/775 , H01L29/7788 , H01L29/7789 , H01L29/8122
摘要： Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.
摘要翻译：本文公开了用于从纳米结构体组形成晶体管的晶体管和方法。晶体管可以由在衬底上垂直生长的纳米结构阵列形成。纳米结构可以具有可以用不同材料和/或掺杂形成以获得期望效果的下部，中部和上部部分。总的来说，下段可形成源或漏，中间段共同形成通道。或者，下段可以共同形成发射器或集电器，中间段共同形成基座。晶体管电极可以是围绕纳米结构侧壁的平面金属结构。晶体管可以是场效应晶体管（FET）或双极结型晶体管（BJT）。异质结双极结晶体管（HBT）和高电子迁移率晶体管（HEMT）是可能的。

2. 发明申请

US20110297913A1 NANOSTRUCTURE OPTOELECTRONIC DEVICE HAVING SIDEWALL ELECTRICAL CONTACT 有权
标题翻译：具有电子电气接触的纳米结构光电器件
公开(公告)号：US20110297913A1
公开(公告)日：2011-12-08
申请号：US12796569
申请日：2010-06-08
申请人： James C. Kim , Sungsoo Yi , Danny E. Mars
发明人： James C. Kim , Sungsoo Yi , Danny E. Mars
IPC分类号： H01L31/0352 , H01L31/18 , H01L33/04 , H01L21/30
CPC分类号： H01L33/18 , B82Y10/00 , H01L25/0756 , H01L33/08 , H01L33/24 , H01L33/38 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.
摘要翻译：公开了纳米结构阵列光电器件。光电子器件可以具有物理和电连接到纳米结构阵列（例如，纳米柱）的侧壁的顶部电接触。顶部电接触可以被定位成使得光可以进入或离开纳米结构而不通过顶部电接触。因此，顶部电接触可以对具有由纳米结构中的活性区域吸收或产生的波长的光是不透明的。顶部电接触可以由高导电性的材料制成，因为不需要在光学透明度和电导率之间进行折衷。该装置可以是太阳能电池，LED，光电检测器等

3. 发明申请

US20100236617A1 Stacked Structure Solar Cell Having Backside Conductive Contacts 审中-公开
标题翻译：具有背面导电触头的堆叠结构的太阳能电池
公开(公告)号：US20100236617A1
公开(公告)日：2010-09-23
申请号：US12408533
申请日：2009-03-20
申请人： Sungsoo Yi
发明人： Sungsoo Yi
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/035281 , H01L31/022441 , H01L31/03529 , H01L31/075 , H01L31/076 , Y02E10/548
摘要： A solar cell having back side conductive contacts and method for forming the solar cell is provided. One embodiment is a solar cell having back side conductive contacts. The solar cell has a first region of a first material having a first conductivity over a front side of a substrate, a second region of a second material conformably on the first material, and a third region of a third material having a second conductivity conformably on the second material. The first region, the second region, and the third region form a structure that generates charge carriers from solar radiation. The solar cell has a first conductive contact and a second conductive contact exposed on the back side of the substrate. The first conductive contact is in electrical contact with the first material and the second conductive contact is in electrical contact with the third material.
摘要翻译：提供具有背面导电触点的太阳能电池和用于形成太阳能电池的方法。一个实施例是具有背面导电触点的太阳能电池。太阳能电池具有第一材料的第一区域，其具有在基板的正面上的第一导电性，第二材料的第二区域顺应地在第一材料上，第三材料的第三区域具有第二导电性，第二种材料。第一区域，第二区域和第三区域形成从太阳辐射产生电荷载流子的结构。太阳能电池具有暴露在基板的背面上的第一导电接触和第二导电接触。第一导电接触件与第一材料电接触，第二导电接触件与第三材料电接触。

4. 发明申请

US20080149942A1 III-Nitride Light Emitting Device with Reduced Strain Light Emitting Layer 有权
标题翻译：具有减少应变发光层的III型氮化物发光器件
公开(公告)号：US20080149942A1
公开(公告)日：2008-06-26
申请号：US11615479
申请日：2006-12-22
申请人： Sungsoo Yi , Aurelien J. F. David , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
发明人： Sungsoo Yi , Aurelien J. F. David , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.
摘要翻译：根据本发明的实施例，通过在器件中包括应变消除层，在III族氮化物器件的发光层中应变被减小。应变消除层生长在其上的表面被配置成使得应变消除层可以横向膨胀并且至少部分地松弛。在本发明的一些实施方案中，应变释放层在织构化的半导体层或掩模层上生长。在本发明的一些实施例中，应变消除层是半导体材料的一组柱。

5. 发明申请

US20110177631A1 METHOD OF FORMING A COMPOSITE SUBSTRATE AND GROWING A III-V LIGHT EMITTING DEVICE OVER THE COMPOSITE SUBSTRATE 有权
标题翻译：形成复合基板的方法和在复合基板上生长III-V发光器件
公开(公告)号：US20110177631A1
公开(公告)日：2011-07-21
申请号：US12688382
申请日：2010-01-15
申请人： Nathan F. Gardner , Michael R. Krames , Melvin B. McLaurin , Sungsoo Yi
发明人： Nathan F. Gardner , Michael R. Krames , Melvin B. McLaurin , Sungsoo Yi
IPC分类号： H01L33/48 , H01L33/32
CPC分类号： H01L33/007 , H01L21/02458
摘要： A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.
摘要翻译：根据本发明的实施方案的方法包括提供包含与宿主结合的宿主和种子层的底物。种子层包括多个区域。在衬底上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。在种子层上生长的半导体层的顶表面的横向范围大于多个种子层区域中的每一个。

6. 发明申请

US20100047957A1 METHOD FOR FORMING SOLAR CELL HAVING ACTIVE REGION WITH NANOSTRUCTURES HAVING ENERGY WELLS 审中-公开
标题翻译：用具有能量孔的纳米结构形成具有活性区域的太阳能电池的方法
公开(公告)号：US20100047957A1
公开(公告)日：2010-02-25
申请号：US12611483
申请日：2009-11-03
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L31/18
CPC分类号： H01L31/0352 , B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/0384 , H01L31/043 , H01L31/0725 , H01L31/0735 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
摘要翻译：提供了一种具有分级能量阱的太阳能电池的方法和装置。太阳能电池的有源区包括纳米结构。纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。例如，III-V族化合物半导体可以是氮化镓（GaN）。作为示例，“带隙改变元件”可以是铟（In）。活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。

7. 发明授权

US07663148B2 III-nitride light emitting device with reduced strain light emitting layer 有权
标题翻译：具有减小的应变发光层的III族氮化物发光器件
公开(公告)号：US07663148B2
公开(公告)日：2010-02-16
申请号：US11615479
申请日：2006-12-22
申请人： Sungsoo Yi , Aurelien J. F. David , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
发明人： Sungsoo Yi , Aurelien J. F. David , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.
摘要翻译：根据本发明的实施例，通过在器件中包括应变消除层，在III族氮化物器件的发光层中应变被减小。应变消除层生长在其上的表面被配置成使得应变消除层可以横向膨胀并且至少部分地松弛。在本发明的一些实施方案中，应变释放层在织构化的半导体层或掩模层上生长。在本发明的一些实施例中，应变消除层是半导体材料的一组柱。

8. 发明授权

US07629532B2 Solar cell having active region with nanostructures having energy wells 有权
标题翻译：具有具有能量阱的具有纳米结构的活性区域的太阳能电池
公开(公告)号：US07629532B2
公开(公告)日：2009-12-08
申请号：US11648059
申请日：2006-12-29
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/0352 , B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/0384 , H01L31/043 , H01L31/0725 , H01L31/0735 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
摘要翻译：提供了一种具有分级能量阱的太阳能电池的方法和装置。太阳能电池的有源区包括纳米结构。纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。例如，III-V族化合物半导体可以是氮化镓（GaN）。作为示例，“带隙改变元件”可以是铟（In）。活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。

9. 发明申请

US20080149946A1 Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light 审中-公开
标题翻译：半导体发光器件配置为发射多个波长的光
公开(公告)号：US20080149946A1
公开(公告)日：2008-06-26
申请号：US11615601
申请日：2006-12-22
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, a III-nitride structure includes a plurality of posts of semiconductor material corresponding to openings in a mask layer. Each post includes a light emitting layer. Each light emitting layer is disposed between an n-type region and a p-type region. A first light emitting layer disposed in a first post is configured to emit light at a different wavelength than a second light emitting layer disposed in a second post. In some embodiments, the wavelength emitted by each light emitting layer is controlled by controlling the diameter of the posts, such that a device that emits white light without phosphor conversion may be formed.
摘要翻译：根据本发明的实施例，III族氮化物结构包括对应于掩模层中的开口的多个半导体材料柱。每个柱包括发光层。每个发光层设置在n型区域和p型区域之间。布置在第一柱中的第一发光层被配置为发射与布置在第二柱中的第二发光层不同的波长的光。在一些实施例中，通过控制柱的直径来控制由每个发光层发射的波长，使得可以形成发射没有磷光体转换的白光的装置。

10. 发明申请

US20070186629A1 Functionalizable nanowire-based AFM probe 审中-公开
标题翻译：基于功能的纳米线AFM探针
公开(公告)号：US20070186629A1
公开(公告)日：2007-08-16
申请号：US11352007
申请日：2006-02-10
申请人： Ying-Lan Chang , Maozi Liu , Sungsoo Yi
发明人： Ying-Lan Chang , Maozi Liu , Sungsoo Yi
IPC分类号： G01B5/28
CPC分类号： G01Q70/12 , G01Q60/42
摘要： The functionalizable nanowire-based AFM probe comprises a cantilever element, a semiconductor nanowire and a catalyst nanoparticle. The cantilever element comprises a crystalline growth surface at one end. The semiconductor nanowire extends substantially orthogonally from the growth surface and, hence from the cantilever element. The catalyst nanoparticle is located at the distal end of the nanowire, remote from the growth surface. The catalyst nanoparticle comprises a material having a greater tendency to bond with a functionalizing molecule moiety than the semiconductor material of the nanowire.
摘要翻译：基于可功能化的基于纳米线的AFM探针包括悬臂元件，半导体纳米线和催化剂纳米颗粒。悬臂元件在一端包括晶体生长表面。半导体纳米线从生长表面基本正交地延伸，因此从悬臂元件延伸。催化剂纳米颗粒位于纳米线的远端，远离生长表面。催化剂纳米颗粒包括与纳米线的半导体材料相比具有比官能化分子部分更大的粘合趋势的材料。

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