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61. 发明授权

US08525434B2 Method and apparatus for power driving 有权
标题翻译：动力驾驶方法与装置
公开(公告)号：US08525434B2
公开(公告)日：2013-09-03
申请号：US12884255
申请日：2010-09-17
申请人： Daniel Reed , Jinho Choi
发明人： Daniel Reed , Jinho Choi
IPC分类号： G05F1/00
CPC分类号： H02M3/33507 , H05B33/0815
摘要： Aspects of the disclosure provide a power circuit to provide electric energy with control and protection for driving a load, such as a light emitting diode (LED) array, and the like. The power circuit includes a converter, a voltage feedback module, a current feedback module and a controller. The converter is configured to receive electric energy from an energy source and to deliver the electric energy for driving the load. The voltage feedback module is configured to generate a first feedback signal based on a voltage of the delivered electric energy. The current feedback module is configured to generate a second feedback signal based on a current of the delivered electric energy. The controller is configured to receive the first feedback signal and the second feedback signal, and to control the converter to receive and deliver the electric energy based on the first feedback signal and the second feedback signal.
摘要翻译：本公开的方面提供了一种电力电路，以向电能提供用于驱动诸如发光二极管（LED）阵列等的负载的控制和保护。电源电路包括转换器，电压反馈模块，电流反馈模块和控制器。转换器被配置为从能量源接收电能并传送用于驱动负载的电能。电压反馈模块被配置为基于所递送的电能的电压产生第一反馈信号。电流反馈模块被配置为基于所传送的电能的电流产生第二反馈信号。控制器被配置为接收第一反馈信号和第二反馈信号，并且基于第一反馈信号和第二反馈信号来控制转换器接收和传递电能。

62. 发明申请

US20070109839A1 MRAM read sequence using canted bit magnetization 有权
标题翻译： MRAM使用斜位磁化读取序列
公开(公告)号：US20070109839A1
公开(公告)日：2007-05-17
申请号：US11273214
申请日：2005-11-14
申请人： Romney Katti , Owen Hynes , Daniel Reed , Hassan Kaakani
发明人： Romney Katti , Owen Hynes , Daniel Reed , Hassan Kaakani
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A new read scheme is provided for an MRAM bit having a pinned layer (fixed) and a storage layer (free) sandwiching a nonmagnetic spacer layer. By applying a magnetic field to the bit at least partially orthogonal to the easy axis of the bit, the magnetization direction of the storage layer can be partially rotated or canted without switching the logical state of the MRAM bit. The resistivity of the bit is measured (calculated based on a voltage/current relationship) in two ways: (i) with the magnetization direction of the storage layer partially rotated in a first direction and (ii) with the magnetization direction of the storage layer in its bi-stable orientation parallel to the easy axis. Those measures can then be used to compare and determine the logical state of the storage layer. For instance, if the canted resistivity is greater than the uncanted resistivity then the magnetization directions of the pinned and storage layer are parallel, and if the canted resistivity is less than the uncanted resistivity then the magnetization directions of the pinned and storage layer are opposite.
摘要翻译：为具有钉扎层（固定）和夹持非磁性间隔层的存储层（自由）的MRAM位提供了新的读取方案。通过将至少部分地正交于该位的容易轴的位施加磁场，可以在不切换MRAM位的逻辑状态的情况下部分地旋转或倾斜存储层的磁化方向。以两种方式测量位的电阻率（基于电压/电流关系计算）：（i）存储层的磁化方向在第一方向上部分旋转，并且（ii）与存储层的磁化方向其平行于易轴的双稳态取向。然后可以使用这些措施来比较和确定存储层的逻辑状态。例如，如果倾斜电阻率大于无电阻率，那么被钉扎层和存储层的磁化方向是平行的，并且如果斜面电阻率小于未被覆盖的电阻率，那么被钉扎和存储层的磁化方向相反。

63. 发明申请

US20060277747A1 Methods for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20060277747A1
公开(公告)日：2006-12-14
申请号：US11508671
申请日：2006-08-22
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

64. 发明申请

US20050027084A1 Production of vinyl halide from single carbon feedstocks 审中-公开
标题翻译：从单一碳原料生产乙烯基卤化物
公开(公告)号：US20050027084A1
公开(公告)日：2005-02-03
申请号：US10477479
申请日：2002-04-23
申请人： William Clarke , Terry Haymon , John Henley , Daniel Hickman , Mark Jones , Matt Miller , Thomas Morris , Daniel Reed , Lawrence Samson , Albert Schweizer , Steve Smith
发明人： William Clarke , Terry Haymon , John Henley , Daniel Hickman , Mark Jones , Matt Miller , Thomas Morris , Daniel Reed , Lawrence Samson , Albert Schweizer , Steve Smith
IPC分类号： B01J8/00 , B01J8/02 , B01J8/18 , B01J23/10 , B01J27/08 , B01J27/10 , C07C17/10 , C07C17/154 , C07C17/156 , C07C21/06 , C08F2/00
CPC分类号： B01J8/18 , B01J8/025 , B01J23/10 , B01J27/08 , B01J27/10 , B01J2208/00132 , B01J2208/00176 , B01J2208/00274 , B01J2219/00006 , B01J2219/0004 , C07C17/10 , C07C17/154 , C07C17/156 , C07C21/06 , C07C19/03
摘要： The preparation of vinyl halide monomer, and further to polyvinyl halide, starting from C1 compounds, involving conversion of methane or methanol to methyl halide; condensation of methyl halide to ethylene and co-product hydrogen halide; oxidative halogenation of ethylene to vinyl halide monomer; separation of vinyl halide monomer from any methyl halide present in the vinyl halide monomer stream; optional recycling of the methyl halide recovered to the condensation step; and recovery and optional recycling of the co-product hydrogen halide. Optionally, the vinyl halide monomer may be polymerized to polyvinyl halide to facilitate separation of the monomer from methyl halide. Methyl halide may be obtained via oxidative halogenation of methane in the presence of a rare earth halide or rare earth oxyhalide catalyst. Optionally, the methyl halide may be converted to methanol.
摘要翻译：从C1化合物开始制备乙烯基卤单体，进一步由聚卤乙烯制备，包括将甲烷或甲醇转化为甲基卤; 甲基卤化物与乙烯和副产物卤化氢的缩合; 乙烯氧化卤化成乙烯基卤单体; 乙烯基卤单体与乙烯基卤单体流中存在的任何甲基卤的分离; 回收到冷凝步骤的甲基卤的任选回收; 和副产物卤化氢的回收和可选回收。任选地，乙烯基卤单体可以聚合成聚卤乙烯以促进单体与甲基卤化物的分离。卤化甲烷可以在稀土卤化物或稀土氧化物催化剂的存在下通过甲烷的氧化卤化得到。任选地，甲基卤可以转化成甲醇。

65. 发明授权

US09857780B1 Positioning work stop 有权
公开(公告)号：US09857780B1
公开(公告)日：2018-01-02
申请号：US13837046
申请日：2013-03-15
申请人： Daniel Reed
发明人： Daniel Reed
IPC分类号： G06F19/00 , G05B15/02
CPC分类号： G05B15/02
摘要： The present invention is a positioning work stop for use with a machine tool for and having a signaling means that operates as a placement indicator effective for providing a signal if the work piece to be machined is in its proper position for machining or for signaling if the work piece has shifted out of position for machining. In a preferred embodiment of the invention the positioning work stop comprises a stop member having a stop surface, a switch element, a signaling means, and a power supply that are electrically coupled such that the signaling means activates when the work piece is in its proper position for manufacturing and for signaling if the work piece has shifted out of position for machining.

66. 发明申请

US20050101079A1 Bit end design for pseudo spin valve (PSV) devices 失效
标题翻译：伪自旋阀（PSV）器件的位端设计
公开(公告)号：US20050101079A1
公开(公告)日：2005-05-12
申请号：US10706067
申请日：2003-11-12
申请人： Romney Katti , Paul Fechner , Gordon Shaw , Daniel Reed , David Zou
发明人： Romney Katti , Paul Fechner , Gordon Shaw , Daniel Reed , David Zou
IPC分类号： G11C11/16 , H01L21/8238
CPC分类号： G11C11/16
摘要： In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.
摘要翻译：在制造磁阻存储器件的过程中，通过使用任何合适的设计工具来生产掩模布局。掩模布局布置在具有形成中心部分的中心格栅和形成钻头末端部分的格栅的格栅中，钻头端部的格栅为矩形。使用掩模布局制作掩模，并且掩模具有阶梯位。该掩模用于制造具有锥形位端的磁存储层，以形成具有锥形位端的磁感应层，并制成具有锥形位端的非磁性层。非磁性层位于磁感应层和磁性存储层之间。

67. 发明申请

US20050097725A1 Method for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20050097725A1
公开(公告)日：2005-05-12
申请号：US10706531
申请日：2003-11-12
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/39 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/12 , G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

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