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    • 4. 发明申请
    • Semiconductor Device and Magneto-Resistive Sensor Integration
    • 半导体器件和磁电阻传感​​器集成
    • US20070200565A1
    • 2007-08-30
    • US11742335
    • 2007-04-30
    • William WitcraftLonny BergMark Amundson
    • William WitcraftLonny BergMark Amundson
    • G01R33/02
    • G01R33/096G01R33/09
    • A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction. Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set/reset circuitry for the MR sensors, accelerometers, pressure sensors, position sensing circuitry, compassing circuitry, etc.
    • 提供了一种磁感测装置及其制造和使用方法。 感测装置可以由半导体电路和磁阻传感器制造。 电介质可以设置在半导体电路和磁阻传感器之间。 在一个实施例中,半导体电路和磁阻传感器形成为单个封装,或者替代地,单片地形成为单个芯片。 在另一个实施例中,半导体电路中的一些可以在第一芯片上与磁阻传感器一体地形成,而半导体电路的其它部分可以形成在第二芯片上。 因此,第一和第二芯片可以被放置在紧密接近并电连接在一起,或者不具有有意的电相互作用。 可能实现的示例性半导体器件包括但不限于电容器,电感器,运算放大器,用于MR传感器的设置/复位电路,加速度计,压力传感器,位置感测电路,罗盘电路等。