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1. 发明申请

US20070109839A1 MRAM read sequence using canted bit magnetization 有权
标题翻译： MRAM使用斜位磁化读取序列
公开(公告)号：US20070109839A1
公开(公告)日：2007-05-17
申请号：US11273214
申请日：2005-11-14
申请人： Romney Katti , Owen Hynes , Daniel Reed , Hassan Kaakani
发明人： Romney Katti , Owen Hynes , Daniel Reed , Hassan Kaakani
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A new read scheme is provided for an MRAM bit having a pinned layer (fixed) and a storage layer (free) sandwiching a nonmagnetic spacer layer. By applying a magnetic field to the bit at least partially orthogonal to the easy axis of the bit, the magnetization direction of the storage layer can be partially rotated or canted without switching the logical state of the MRAM bit. The resistivity of the bit is measured (calculated based on a voltage/current relationship) in two ways: (i) with the magnetization direction of the storage layer partially rotated in a first direction and (ii) with the magnetization direction of the storage layer in its bi-stable orientation parallel to the easy axis. Those measures can then be used to compare and determine the logical state of the storage layer. For instance, if the canted resistivity is greater than the uncanted resistivity then the magnetization directions of the pinned and storage layer are parallel, and if the canted resistivity is less than the uncanted resistivity then the magnetization directions of the pinned and storage layer are opposite.
摘要翻译：为具有钉扎层（固定）和夹持非磁性间隔层的存储层（自由）的MRAM位提供了新的读取方案。通过将至少部分地正交于该位的容易轴的位施加磁场，可以在不切换MRAM位的逻辑状态的情况下部分地旋转或倾斜存储层的磁化方向。以两种方式测量位的电阻率（基于电压/电流关系计算）：（i）存储层的磁化方向在第一方向上部分旋转，并且（ii）与存储层的磁化方向其平行于易轴的双稳态取向。然后可以使用这些措施来比较和确定存储层的逻辑状态。例如，如果倾斜电阻率大于无电阻率，那么被钉扎层和存储层的磁化方向是平行的，并且如果斜面电阻率小于未被覆盖的电阻率，那么被钉扎和存储层的磁化方向相反。

2. 发明申请

US20070091669A1 Giant magneto-resistive static read RAM memory architecture 失效
标题翻译：巨型磁阻静态读取存储器架构
公开(公告)号：US20070091669A1
公开(公告)日：2007-04-26
申请号：US11257327
申请日：2005-10-24
申请人： Owen Hynes , Roy Wang , Romney Katti , Daniel Reed
发明人： Owen Hynes , Roy Wang , Romney Katti , Daniel Reed
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.
摘要翻译：提出了一种包含辐射硬化和低功率存储单元的磁阻存储器系统。磁阻存储单元包括单元中的字线选择晶体管，以帮助消除未选择的单元干扰。此外，磁阻存储器单元包括使用比以前的单元架构更少的电流写入真实和互补位值的全匝写入字线。改进的存储单元可以用于具有精密电流驱动器和自动零感测放大器的存储器系统中，以便进一步降低功率并提高整体系统的可靠性。

3. 发明申请

US20060221675A1 System and method for hardening MRAM bits 有权
标题翻译：用于硬化MRAM位的系统和方法
公开(公告)号：US20060221675A1
公开(公告)日：2006-10-05
申请号：US11096179
申请日：2005-03-31
申请人： Owen Hynes , Romney Katti , Harry Liu , Michael Liu
发明人： Owen Hynes , Romney Katti , Harry Liu , Michael Liu
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A system and method for protecting MRAM bits during a dose rate event is described. A device is connected in parallel with an MTJ structure of an MRAM bit to shunt photocurrent away from and/or limit voltage across the MTJ structure during a dose rate event. The device may include at least one transistor and/or at least one diode. One device may be used to protect an entire row and/or column of MRAM bits.
摘要翻译：描述了在剂量率事件期间保护MRAM位的系统和方法。器件与MRAM位的MTJ结构并联连接，以在剂量率事件期间跨越MTJ结构分流光电流和/或限制跨越MTJ结构的电压。该器件可以包括至少一个晶体管和/或至少一个二极管。一个设备可用于保护MRAM位的整个行和/或列。

4. 发明申请

US20060277747A1 Methods for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20060277747A1
公开(公告)日：2006-12-14
申请号：US11508671
申请日：2006-08-22
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

5. 发明申请

US20050101079A1 Bit end design for pseudo spin valve (PSV) devices 失效
标题翻译：伪自旋阀（PSV）器件的位端设计
公开(公告)号：US20050101079A1
公开(公告)日：2005-05-12
申请号：US10706067
申请日：2003-11-12
申请人： Romney Katti , Paul Fechner , Gordon Shaw , Daniel Reed , David Zou
发明人： Romney Katti , Paul Fechner , Gordon Shaw , Daniel Reed , David Zou
IPC分类号： G11C11/16 , H01L21/8238
CPC分类号： G11C11/16
摘要： In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.
摘要翻译：在制造磁阻存储器件的过程中，通过使用任何合适的设计工具来生产掩模布局。掩模布局布置在具有形成中心部分的中心格栅和形成钻头末端部分的格栅的格栅中，钻头端部的格栅为矩形。使用掩模布局制作掩模，并且掩模具有阶梯位。该掩模用于制造具有锥形位端的磁存储层，以形成具有锥形位端的磁感应层，并制成具有锥形位端的非磁性层。非磁性层位于磁感应层和磁性存储层之间。

6. 发明申请

US20050097725A1 Method for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US20050097725A1
公开(公告)日：2005-05-12
申请号：US10706531
申请日：2003-11-12
申请人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
发明人： Daniel Baseman , Lonny Berg , Romney Katti , Daniel Reed , Gordon Shaw , Wei Zou
IPC分类号： G11B5/39 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L43/12 , G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

7. 发明申请

US20060237823A1 Shielding arrangement to protect a circuit from stray magnetic fields 有权
公开(公告)号：US20060237823A1
公开(公告)日：2006-10-26
申请号：US11475376
申请日：2006-06-26
申请人： Richard Spielberger , Romney Katti
发明人： Richard Spielberger , Romney Katti
IPC分类号： H01L23/552
CPC分类号： B82Y10/00 , G01R33/025 , H01L23/552 , H01L23/585 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01078 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A shielding arrangement for protecting a circuit containing magnetically sensitive materials from external stray magnetic fields. A shield of a material having a relatively high permeability is formed over the magnetically sensitive materials using thin film deposition techniques. Alternatively, a planar shield is affixed directly to a surface of semiconductor die containing an integrated circuit structure.

8. 发明申请

US20060186445A1 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications 审中-公开
标题翻译：用于磁随机存取存储器（MRAM）应用的偏置调整巨磁阻（GMR）器件
公开(公告)号：US20060186445A1
公开(公告)日：2006-08-24
申请号：US11405783
申请日：2006-04-18
申请人： Romney Katti
发明人： Romney Katti
IPC分类号： H01L29/94
CPC分类号： B82Y25/00 , G11B5/39 , G11C11/16 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A bias-adjusted giant magnetoresistive (GMR) device includes a ferromagnetic reference layer, which has a magnetization that remains relatively fixed when a range of magnetic fields is applied, and a ferromagnetic switching layer, which has a magnetization that can be changed by applying a relatively small magnetic field. In MRAM applications, the switching layer stores data in the form of the particular orientation of its magnetization relative to the magnetization of the reference layer. At least one of the reference and switching layers is split into at least two ferromagnetic layers separated by one or more layers of a nonmagnetic conductor, such that the hysteresis curve of resistance versus applied magnetic field is substantially symmetric about zero applied magnetic field.
摘要翻译：偏置调整巨磁阻（GMR）器件包括铁磁参考层，其具有在施加磁场范围时保持相对固定的磁化强度，以及具有可通过施加磁场的磁化强度的铁磁开关层磁场相对较小。在MRAM应用中，开关层以相对于参考层的磁化的磁化的特定取向的形式存储数据。参考和切换层中的至少一个被分成由一个或多个非磁性导体层隔开的至少两个铁磁层，使得电阻对施加的磁场的磁滞曲线在零施加的磁场上基本对称。

9. 发明申请

US20060018150A1 Antiferromagnetically stabilized pseudo spin valve for memory applications 有权
公开(公告)号：US20060018150A1
公开(公告)日：2006-01-26
申请号：US11146431
申请日：2005-06-07
申请人： Romney Katti , Joel Drewes , Timothy Vogt
发明人： Romney Katti , Joel Drewes , Timothy Vogt
IPC分类号： G11C11/00
CPC分类号： H01L27/222 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3268 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.

10. 发明申请

US20050237790A1 Antiferromagnetically stabilized pseudo spin valve for memory applications 有权
公开(公告)号：US20050237790A1
公开(公告)日：2005-10-27
申请号：US11103347
申请日：2005-04-11
申请人： Romney Katti , Joel Drewes , Timothy Vogt
发明人： Romney Katti , Joel Drewes , Timothy Vogt
IPC分类号： G11C11/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L27/222 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3268 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.

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