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61. 发明申请

US20060134547A1 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
公开(公告)号：US20060134547A1
公开(公告)日：2006-06-22
申请号：US11195566
申请日：2005-08-02
申请人： Wu-Song Huang , Sean Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean Burns , Mahmoud Khojasteh
IPC分类号： G03C1/76
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

62. 发明申请

US20060134546A1 Low refractive index polymers as underlayers for silicon-containing photoresists 有权
$Low refractive index polymers as underlayers for silicon-containing photoresists$
标题翻译：低折射率聚合物作为含硅光致抗蚀剂的底层
公开(公告)号：US20060134546A1
公开(公告)日：2006-06-22
申请号：US11013971
申请日：2004-12-16
申请人： Wu-Song Huang , Sean Burns , Mahmoud Khojasteh
发明人： Wu-Song Huang , Sean Burns , Mahmoud Khojasteh
IPC分类号： G03C1/76
CPC分类号： G03F7/091 , G03F7/094 , Y10S438/952
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。本发明的聚合物的实例包括：其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机部分; R 2是氢或甲基; X，Y，Z为0〜7的整数，Y + Z为7以下。上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

63. 发明授权

US06730454B2 Antireflective SiO-containing compositions for hardmask layer 有权
标题翻译：用于硬掩模层的抗反射SiO组合物
公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译：存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。

64. 发明授权

US06641971B2 Resist compositions comprising silyl ketals and methods of use thereof 失效
标题翻译：包含甲硅烷基缩酮的抗蚀剂组合物及其使用方法
公开(公告)号：US06641971B2
公开(公告)日：2003-11-04
申请号：US09882234
申请日：2001-06-15
申请人： Wu-Song Huang , David R. Medeiros
发明人： Wu-Song Huang , David R. Medeiros
IPC分类号： G03F7023
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106
摘要： A chemically amplified resist composition comprises an aqueous base soluble polymer or copolymer having one or more polar functional groups, wherein at least one of the functional groups is protected with a cycloaliphatic silyl ketal group but may also include other protecting groups as well as unprotected acidic functionalities. A ratio of protected to unprotected acidic functionalities is preferably selected to most effectively modulate a solubility of the resist composition in an aqueous base or other developer. The resist composition further comprises an acid generator, preferably a photoacid generator (PAG), and a casting solvent, and may also include other components, such as, a base additive and/or surfactant.
摘要翻译：化学放大抗蚀剂组合物包含具有一个或多个极性官能团的碱性水溶性聚合物或共聚物，其中至少一个官能团用脂环族甲硅烷基缩酮基团保护，但也可包括其它保护基团以及未保护的酸性官能团。优选选择被保护的与未保护的酸性官能度的比例以最有效地调节抗蚀剂组合物在碱性水溶液或其它显影剂中的溶解度。抗蚀剂组合物还包含酸产生剂，优选光酸产生剂（PAG）和浇铸溶剂，并且还可以包括其它组分，例如碱添加剂和/或表面活性剂。

65. 发明授权

US06543617B2 Packaged radiation sensitive coated workpiece process for making and method of storing same 失效
标题翻译：包装辐射敏感涂层工艺制造及其存储方法
公开(公告)号：US06543617B2
公开(公告)日：2003-04-08
申请号：US09802471
申请日：2001-03-09
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65D8500
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitvity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译：本发明包括一个包装的涂层工件。包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件周没有显着损失敏感性，分辨率或性能。本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。

66. 发明授权

US5733705A Acid Scavengers for use in chemically amplified photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的酸清除剂
公开(公告)号：US5733705A
公开(公告)日：1998-03-31
申请号：US730687
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译：质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

67. 发明授权

US5200112A Electrically conductive polymeric materials and uses thereof 失效
标题翻译：导电聚合材料及其用途
公开(公告)号：US5200112A
公开(公告)日：1993-04-06
申请号：US718079
申请日：1991-06-20
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： C08G61/12 , H01B1/12 , H01J29/86 , H01L23/498 , H01L23/60 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/125 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectivly doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.
摘要翻译：含有导电聚合物的结构及其制造方法。可以在选自取代和未取代的聚苯胺，聚对苯二烯基乙烯基，取代和未取代的聚噻吩，取代和未取代的聚对苯硫醚，取代的聚呋喃，取代的聚吡咯，取代的聚硒酚，由可溶性前体形成的聚乙炔，其组合及其与其它聚合物的共混物。聚合物含有选自鎓盐，碘鎓盐，三氟甲磺酸盐，硼酸盐和甲苯磺酸盐和磺酰氧基酰亚胺的掺杂前体。可以通过在选择性地暴露于诸如电磁辐射，电子束和热的能量源之间选择性地掺杂在聚合物中选择性地诱导电导率。本发明的导电聚合物可用作用于电子束应用的电子放电层，例如SEM观察，作为电介质表面上的电磁干扰涂层和用作放电层的电子束抗蚀剂。

68. 发明授权

US5062896A Solder/polymer composite paste and method 失效
标题翻译：焊剂/聚合物复合材料和方法
公开(公告)号：US5062896A
公开(公告)日：1991-11-05
申请号：US502090
申请日：1990-03-30
申请人： Wu-Song Huang , Igor Y. Khandros , Ravi Saraf , Leathen Shi
发明人： Wu-Song Huang , Igor Y. Khandros , Ravi Saraf , Leathen Shi
IPC分类号： B23K35/22 , B23K35/26 , B23K35/36 , B23K35/363 , B23K101/36 , C08K3/08 , H05K3/32 , H05K3/34
CPC分类号： H05K3/3484 , B23K35/26 , B23K35/36 , C08K3/08 , H05K2201/0129 , H05K3/321
摘要： An improved solder/polymer fluxless composite paste interconnection material having a low reflow temperature to form electrical contacts having good bonding strength and low contact resistance. The present pastes comprise a major proportion of a meltable metal alloy powder filler, free of noble metals and preferably free of lead, a minor proportion of a solution of a temperature-stable thermoplastic polymer having a softening temperature above the melting temperature of the metal powder filler in a volatile solvent which evaporates during reflow, and a minor proportion of a fluxing agent having a boiling point lower than the reflow temperature of the composition and higher than the melting point of the eutectic alloy powder filler. An oxide-free, partially coalesced metal alloy connection is obtained, which is polymer strengthened and reworkable at a low reflow temperature, per se, or in the presence of polymer solvent.
摘要翻译：具有低回流温度的改进的焊料/聚合物无焊剂复合糊剂互连材料，以形成具有良好的接合强度和低接触电阻的电触点。本发明的糊料主要包括不含贵金属，优选不含铅的可熔融金属合金粉末填料的主要部分，较小比例的软化温度高于金属粉末的熔融温度的温度稳定的热塑性聚合物溶液在回流时蒸发的挥发性溶剂中的填料，以及沸点低于组合物的回流温度并且高于共晶合金粉末填料的熔点的助熔剂的一小部分。获得无氧化物，部分聚结的金属合金连接，其在低回流温度下或在聚合物溶剂的存在下聚合物增强并可再加工。

69. 发明授权

US08722307B2 Near-infrared absorptive layer-forming composition and multilayer film comprising near-infrared absorptive layer 有权
标题翻译：近红外吸收层形成组合物和包含近红外吸收层的多层膜
公开(公告)号：US08722307B2
公开(公告)日：2014-05-13
申请号：US13118013
申请日：2011-05-27
申请人： Seiichiro Tachibana , Kazumi Noda , Masaki Ohashi , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Seiichiro Tachibana , Kazumi Noda , Masaki Ohashi , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/004 , G03F7/11
CPC分类号： G03F7/038 , G03F7/0046 , G03F7/091
摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.
摘要翻译：包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。

70. 发明授权

US08492079B2 Method of forming a pattern of an array of shapes including a blocked region 有权
标题翻译：形成包括阻挡区域的形状阵列的图案的方法
公开(公告)号：US08492079B2
公开(公告)日：2013-07-23
申请号：US12430919
申请日：2009-04-28
申请人： Chia-Chen Chen , Wu-Song Huang , Wai-Kin Li , Chandrasekhar Sarma
发明人： Chia-Chen Chen , Wu-Song Huang , Wai-Kin Li , Chandrasekhar Sarma
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/095 , G03F7/203 , Y10T428/24802
摘要： A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.
摘要翻译：在基板上形成具有第二光敏性的第二光致抗蚀剂。在第二光致抗蚀剂上形成具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。优选地，第一光致抗蚀剂是在曝光时变得透明的灰色抗蚀剂。使用具有第一图案的第一掩模版将第一光致抗蚀剂的至少一部分光刻曝光以形成至少一个透明的光刻曝光的抗蚀剂部分，而第二光致抗蚀剂保持完整。使用包括第二图案的第二掩模版将第二光致抗蚀剂光刻曝光，以在第二光致抗蚀剂中形成多个光刻曝光的形状。多个光刻曝光的形状具有通过仅在至少一个透明光刻曝光的抗蚀剂图案的区域内限制第二图案而从第二图案导出的复合图案。

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