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61. 发明授权

US4722801A Toilet bowl cleaner in cake form containing a polyethyleneglycol distearate 失效
标题翻译：含有聚乙二醇二硬脂酸酯的蛋糕形式的马桶清洁剂
公开(公告)号：US4722801A
公开(公告)日：1988-02-02
申请号：US876923
申请日：1986-06-20
申请人： Charles J. Bunczk , Peter A. Burke , Edward Strauch
发明人： Charles J. Bunczk , Peter A. Burke , Edward Strauch
IPC分类号： A61L9/05 , C11D1/72 , C11D1/74 , C11D1/825 , C11D3/02 , C11D3/04 , C11D3/22 , C11D3/37 , C11D17/00 , C11D3/20
CPC分类号： C11D3/046 , A61L9/05 , C11D1/74 , C11D1/825 , C11D17/0056 , C11D3/222 , C11D3/3707 , C11D1/72
摘要： Solid cake lavoratory cleansing block compositions comprising polyethylene glycol distearate having a dissolution time of at least 5.5 hours, and optional ingredients which include a gelling natural gum, fragrances, dyes, solid binders, filler material and mixtures thereof.

62. 发明授权

US08629488B2 Method for manufacturing an energy storage device and structure therefor 有权
标题翻译：储能装置的制造方法及其结构
公开(公告)号：US08629488B2
公开(公告)日：2014-01-14
申请号：US12108361
申请日：2008-04-23
申请人： Sallie Hose , Derryl Allman , Peter A. Burke , Ponce Saopraseuth
发明人： Sallie Hose , Derryl Allman , Peter A. Burke , Ponce Saopraseuth
IPC分类号： G11C11/00
CPC分类号： H01L28/75
摘要： An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.
摘要翻译：诸如金属 - 绝缘体 - 金属电容器的能量存储装置和用于制造储能装置的方法。金属 - 绝缘体 - 金属电容器包括位于底部电极或底板与顶部电极或顶板之间的绝缘材料。底部电极的表面积大于绝缘材料的表面积，并且绝缘材料的表面积大于顶部电极的表面积。顶部电极和绝缘层具有横向在底部电极的边缘内并与其间隔开的边缘。保护层覆盖顶部电极，顶部电极的边缘和绝缘层的未被顶部电极覆盖的部分。在形成底部电极期间，保护层用作蚀刻掩模。

63. 发明申请

US20130323921A1 METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE AND STRUCTURE 有权
标题翻译：制造绝缘栅半导体器件和结构的方法
公开(公告)号：US20130323921A1
公开(公告)日：2013-12-05
申请号：US13482920
申请日：2012-05-29
申请人： Peter A. Burke , Eric J. Ameele
发明人： Peter A. Burke , Eric J. Ameele
IPC分类号： H01L21/283 , H01L21/31
CPC分类号： H01L29/7813 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L29/401 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/4933 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric layer is formed using an improved high temperature oxide (HTO) low pressure chemical vapor deposition (LPCVD) process.
摘要翻译：在一个实施例中，沟槽屏蔽电极层通过电极间介电层与沟槽栅电极分离。形成共形沉积介电层作为栅极电介质结构的一部分，并进一步将沟槽屏蔽电极与沟槽栅电极隔离。使用改进的高温氧化物（HTO）低压化学气相沉积（LPCVD）工艺形成共形沉积介电层。

64. 发明授权

US08362548B2 Contact structure for semiconductor device having trench shield electrode and method 有权
标题翻译：具有沟槽屏蔽电极的半导体器件的接触结构及方法
公开(公告)号：US08362548B2
公开(公告)日：2013-01-29
申请号：US12271030
申请日：2008-11-14
申请人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
发明人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
摘要翻译：在一个实施例中，具有沟槽屏蔽电极的半导体器件的接触结构包括沟槽结构内的栅电极接触部分和屏蔽电极接触部分。在沟槽结构内部或内部对栅电极和屏蔽电极进行接触。厚的钝化层包围接触部分中的屏蔽电极。

65. 发明授权

US07928521B1 Non-tensioned carbon nanotube switch design and process for making same 有权
标题翻译：非张力碳纳米管开关的设计与制造过程
公开(公告)号：US07928521B1
公开(公告)日：2011-04-19
申请号：US11142725
申请日：2005-05-31
申请人： Peter A. Burke , Thomas Rueckes , Claude L. Bertin
发明人： Peter A. Burke , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L29/82
CPC分类号： H01H1/0094 , B82Y10/00 , H01H59/0009 , H01H2001/0042 , H01H2059/0045 , H01L51/0048 , H01L51/0591 , Y10S977/932
摘要： The invention comprises a carbon nanotube switch suitable for use in an integrated circuit structure and capable of being moved from a first position in a first plane in the switch to a second position in a second plane in the switch using approximately the same energy as required to move the switch from the second position back to the first position. The switch comprises a flexible carbon nanotube strip secured clamped at one end in a first plane in a switching chamber, and secured or clamped, at the opposite end of the carbon nanotube, in a second plane in the switching chamber, which is parallel to the first plane but spaced therefrom, to permit the central portion of the carbon nanotube strip to move in the chamber between a first position in the first plane and in electrical contact with one or more first electrodes and a second position in the second plane and in electrical contact with one or more second electrodes.
摘要翻译：本发明包括一种适用于集成电路结构的碳纳米管开关，其能够使用开关中的第一平面中的第一位置移动到开关中的第二平面中的第二位置，使用大约相同的能量将开关从第二个位置移回到第一个位置。开关包括柔性碳纳米管条，其固定在切换室中的第一平面中的一端处夹持，并且在碳纳米管的相对端处固定或夹紧在开关室中的平行于第二平面的第二平面中第一平面但与其间隔开，以允许碳纳米管条的中心部分在室中在第一平面中的第一位置和与一个或多个第一电极电连接并且在第二平面中的第二位置和电气与一个或多个第二电极接触。

66. 发明授权

US07915122B2 Self-aligned cell integration scheme 失效
标题翻译：自对准单元集成方案
公开(公告)号：US07915122B2
公开(公告)日：2011-03-29
申请号：US11312849
申请日：2005-12-20
申请人： Richard J. Carter , Hemanshu D. Bhatt , Shiqun Gu , Peter A. Burke , James R. B. Elmer , Sey-Shing Sun , Byung-Sung Kwak , Verne Hornback
发明人： Richard J. Carter , Hemanshu D. Bhatt , Shiqun Gu , Peter A. Burke , James R. B. Elmer , Sey-Shing Sun , Byung-Sung Kwak , Verne Hornback
IPC分类号： H01L21/336
CPC分类号： H01L51/0018 , B82Y10/00 , H01L27/283 , H01L51/0048 , H01L51/0545 , Y10S977/742
摘要： A method of forming a self-aligned logic cell. A nanotube layer is formed over the bottom electrode. A clamp layer is formed over the nanotube layer. The clamp layer covers the nanotube layer, thereby protecting the nanotube layer. A dielectric layer is formed over the clamp layer. The dielectric layer is etched. The clamp layer provides an etch stop and protects the nanotube layer. The clamp layer is etched with an isotropic etchant that etches the clamp layer underneath the dielectric layer, creating an overlap of the dielectric layer, and causing a self-alignment between the clamp layer and the dielectric layer. A spacer layer is formed over the nanotube layer. The spacer layer is etched except for a ring portion around the edge of the dielectric layer. The nanotube layer is etched except for portions that are underlying at least one of the clamp layer, the dielectric layer, and the spacer layer, thereby causing a self-alignment between the clamp layer, the overlap to the dielectric layer, the spacer layer, and the nanotube layer.
摘要翻译：一种形成自对准逻辑单元的方法。在底部电极上形成纳米管层。在纳米管层上形成夹层。夹层覆盖纳米管层，从而保护纳米管层。在钳位层上形成电介质层。蚀刻介电层。钳位层提供蚀刻停止并保护纳米管层。用各向同性蚀刻剂蚀刻钳夹层，蚀刻介质层下方的夹层，产生电介质层的重叠，并引起钳位层和电介质层之间的自对准。在纳米管层上形成间隔层。除了围绕电介质层的边缘的环形部分之外，蚀刻间隔层。除了夹持层，电介质层和间隔层中的至少一个的部分以外，蚀刻纳米管层，从而导致夹紧层之间的自对准，与电介质层的重叠，间隔层，和纳米管层。

67. 发明申请

US20110027961A1 Semiconductor Component and Method of Manufacture 有权
公开(公告)号：US20110027961A1
公开(公告)日：2011-02-03
申请号：US12902130
申请日：2010-10-11
申请人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
发明人： Peter A. Burke , Sallie Hose , Sudhama C. Shastri
IPC分类号： H01L21/02
CPC分类号： H01L23/5223 , H01L21/76801 , H01L21/76807 , H01L21/76846 , H01L23/5227 , H01L23/5228 , H01L23/53238 , H01L28/20 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

68. 发明授权

US07850925B2 Apparatus for removal of vaporized hydrogen peroxide from a region 有权
标题翻译：用于从区域去除蒸发的过氧化氢的装置
公开(公告)号：US07850925B2
公开(公告)日：2010-12-14
申请号：US11763574
申请日：2007-06-15
申请人： Michael A. Centanni , Peter A. Burke
发明人： Michael A. Centanni , Peter A. Burke
IPC分类号： A62B7/08 , A61L9/00
CPC分类号： A61L2/208 , A61L2/202 , A61L2/206 , A61L9/015 , A61L2202/13
摘要： A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.
摘要翻译：用于对暴露于气体/蒸气灭菌剂的区域进行曝气的方法和装置。催化破坏剂和反应性化学单元用于降低该区域内气态/蒸气灭菌剂的浓度。反应性化学单元包括与气态/蒸气灭菌剂化学反应的化学物质。在一个实施方案中，气态/蒸气灭菌剂是蒸发的过氧化氢，并且反应性化学单元的化学性质包括硫代硫酸盐和碘化物。

69. 发明申请

US20090256217A1 CARBON NANOTUBE MEMORY CELLS HAVING FLAT BOTTOM ELECTRODE CONTACT SURFACE 审中-公开
标题翻译：碳纳米管存储器具有平底电极接触表面
公开(公告)号：US20090256217A1
公开(公告)日：2009-10-15
申请号：US12102700
申请日：2008-04-14
申请人： Hongquiang Lu , Peter A. Burke , Wilbur Catabay
发明人： Hongquiang Lu , Peter A. Burke , Wilbur Catabay
IPC分类号： H01L27/00 , H01L21/02
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , G11C2213/16 , H01L21/76849 , H01L23/485 , H01L27/115 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to structures and methods of fabricating nanotube electromechanical memory cells having a bottom electrode with a substantially planar contact surface. The bottom electrode is configured so that during the operation of the memory cell the nanotube crossbar of the cell can make contact with a substantially planar surface of the bottom electrode.
摘要翻译：本发明涉及制造具有基本平坦的接触表面的底部电极的纳米管机电存储单元的结构和方法。底部电极被配置为使得在存储器单元的操作期间，电池的纳米管横截面可以与底部电极的基本平坦的表面接触。

70. 发明授权

US07569182B2 Filter assembly for a reprocessor 有权
标题翻译：用于再处理器的过滤组件
公开(公告)号：US07569182B2
公开(公告)日：2009-08-04
申请号：US11494341
申请日：2006-07-27
申请人： Peter A. Burke , Karl F. Ludwig , Jude A. Kral , Francis J. Zelina
发明人： Peter A. Burke , Karl F. Ludwig , Jude A. Kral , Francis J. Zelina
IPC分类号： A61L2/18
CPC分类号： A61L2/18 , A61L2/022 , A61L2/16 , C02F1/001 , C02F1/02 , C02F1/32 , C02F1/44 , C02F1/444 , C02F1/50 , C02F1/688 , C02F1/722 , C02F9/00 , C02F9/005 , C02F2301/08
摘要： The present invention provides a method of operating a reprocessor that has a chamber for receiving items to be sterilized. The reprocessor is filled with water that has passed through a first and a second filter element that both comprise a filtration system. A liquid sterilant is generated by mixing the water with dry chemical reagents. The liquid sterilant is circulated through a fluid circulation system and the filtration system wherein a portion of the liquid sterilant is directed through a bypass conduit and another portion is directed through the first and second filter elements. After a predetermined exposure time, the reprocessor is drained. Then the reprocessor is filled with water for rinsing that has passed through the first and the second filter elements. The water for rinsing is heated prior to being introduced into the reprocessor.
摘要翻译：本发明提供了一种操作再处理器的方法，该再处理器具有用于接收待消毒物品的室。再生处理器充满已经通过包括过滤系统的第一和第二过滤元件的水。通过将水与干化学试剂混合而产生液体灭菌剂。液体灭菌剂通过流体循环系统和过滤系统循环，其中一部分液体杀菌剂通过旁路导管引导，另一部分被引导通过第一和第二过滤元件。在预定的曝光时间之后，再处理器被排出。然后再次处理器充满已经通过第一和第二过滤器元件的用于漂洗的水。用于冲洗的水在被引入再处理器之前被加热。

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