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61. 发明授权

US5413982A Field effect transistor having c-axis channel layer 失效
标题翻译：具有c轴沟道层的场效应晶体管
公开(公告)号：US5413982A
公开(公告)日：1995-05-09
申请号：US990836
申请日：1992-12-14
申请人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
发明人： Hiroshi Inada , So Tanaka , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/14 , H01L39/24 , H01B12/00 , B05D5/12
CPC分类号： H01L39/2467 , H01L39/146 , Y10S505/728
摘要： A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film on the non-superconducting oxide layer, a superconducting source region and a superconducting drain region formed of an a-axis oriented oxide superconductor thin film at the both sides of the superconducting channel separated from each other, which are electrically connected each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, and a gate electrode of a material which includes silicon through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the gate electrode is embedded between the superconducting source region and the superconducting drain region and is isolated from the superconducting source region and the superconducting drain region by an insulating region formed by diffused silicon from the gate electrode.
摘要翻译：一种超导装置，包括具有主表面的衬底，具有与氧化物超导体相似的晶体结构的非超导氧化物层，在非超导体上由c轴取向的氧化物超导体薄膜形成的极薄超导通道氧化物层，超导源极区域和由超导通道两侧的a轴取向的氧化物超导体薄膜形成的超导漏极区域，由超导通道彼此电连接，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道，以及通过超导通道上的栅极绝缘体包括硅的材料的栅电极，用于控制流过超导通道的超导电流，其中栅电极被嵌入 d，并且通过由栅极电极扩散的硅形成的绝缘区域与超导源极区域和超导漏极区域隔离。

62. 发明授权

US5407903A Superconducting device having a reduced thickness of oxide superconducting layer 失效
标题翻译：具有减小厚度的氧化物超导层的超导装置
公开(公告)号：US5407903A
公开(公告)日：1995-04-18
申请号：US766184
申请日：1991-09-27
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L39/22 , H01B12/00
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/728
摘要： For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.
摘要翻译：为了制造超导装置，在基板的主表面上形成具有非常薄的厚度的第一c轴取向的氧化物超导薄膜，并且在绝缘体的一部分上形成栅极绝缘体和栅电极的层叠结构第一氧化物超导体薄膜。使用栅电极作为掩模来生长a轴取向的氧化物超导体薄膜，使得在栅电极的两侧形成具有较厚厚度的第二和第三超导区域，与栅电极电隔离。这样形成的超导器件可以用作超级FET。

63. 发明授权

US5326747A Process for patterning layered thin films including a superconductor 失效
标题翻译：用于图案化包括超导体的层状薄膜的工艺
公开(公告)号：US5326747A
公开(公告)日：1994-07-05
申请号：US865498
申请日：1992-04-09
申请人： Hiroshi Inada , Michitomo Iiyama
发明人： Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/24 , H01L21/00
CPC分类号： H01L39/2464 , Y10S505/725 , Y10S505/728 , Y10S505/73
摘要： A process for patterning layered thin films comprising a bottom oxide superconductor (1) layer deposited on a substrate (3) and another thin film (2) deposited on the bottom superconductor layer and consisting of insulator, ordinary conductor or oxide superconductor having a different crystal orientation from the bottom superconductor layer. The bottom superconductor layer (1) is subjecting to heat-treatment before another thin film (2) is deposited thereon. The heat-treatment can be carried out under a first condition in ultra high-vacuum at a temperature which is lower than the oxygen-trap temperature (T.sub.trap) at which oxygen can enter into the oxide superconductor but is higher than a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap -100.degree. C.) or under a second condition in an atmosphere containing oxygen of high purity at a temperature which is higher than the oxygen-trap temperature (T.sub.trap) but is lower than a film forming temperature of the first thin film of oxide superconductor.
摘要翻译：一种用于图案化层叠薄膜的工艺，其包括沉积在基板（3）上的底部氧化物超导体（1）层和沉积在底部超导体层上的另一薄膜（2），并由绝缘体，具有不同晶体的普通导体或氧化物超导体从底部超导体层取向。在其上沉积另一薄膜（2）之前，对底部超导体层（1）进行热处理。热处理可以在超高真空中的第一条件下进行，其温度低于氧气可以进入氧化物超导体的氧捕获温度（Ttrap），但高于低于或在第二条件下，在高于氧气捕获温度（Ttrap）的温度下，在含有高纯度氧的气氛中，低于氧捕获温度（Ttrap-100℃）比第一薄膜氧化物超导体的成膜温度高。

64. 发明授权

US5236896A Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material 失效
标题翻译：具有形成氧化物超导体材料的超薄型超导体通道的超导体器件
公开(公告)号：US5236896A
公开(公告)日：1993-08-17
申请号：US771986
申请日：1991-10-08
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14
CPC分类号： H01L39/146 , Y10S505/702 , Y10S505/703 , Y10S505/729 , Y10T29/413
摘要： A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.

65. 发明授权

US4820666A Zirconia base ceramics 失效
标题翻译：氧化锆基陶瓷
公开(公告)号：US4820666A
公开(公告)日：1989-04-11
申请号：US842496
申请日：1986-03-21
申请人： Masanori Hirano , Hiroshi Inada
发明人： Masanori Hirano , Hiroshi Inada
IPC分类号： C04B35/119 , C04B35/488 , C04B35/48
CPC分类号： C04B35/4885 , C04B35/119
摘要： The invention consists of zirconia base with high hydrothermal stability which:(a) consists essentially of at least 40 weight % of partially stabilized zirconia of the ZrO.sub.2 -Y.sub.2 O.sub.3 -CeO.sub.2 system wherein the proportion of ZrO.sub.2, Y.sub.2 O.sub.3, and CeO.sub.2 is within the range defined by the line connecting points F, G, L, M, N and K in a ternary diagram (ZrO.sub.2, YO.sub.1.5, CeO.sub.2), the vertices of said points being given by the following molar % of ZrO.sub.2, YO.sub.1.5, and CeO.sub.2, respectively:F (88, 10, 2),G (89, 10, 1),L (93.5, 4, 2.5),M (93, 2, 5),N (88, 1, 11), andK (86, 1,13),and 3 to 60 weight % of at least one of Al.sub.2 O.sub.3, MgO.Al.sub.2 O.sub.3, spinel and mullite, and(b) has a mean crystal grain size not exceeding 2 micrometers and a bending strength of at least 100 kgf/mm.sup.2, said ZrO.sub.2 containing a minimum of 50 volume % tetragonal crystal structure and a maximum of 5 volume % monoclinic crystal structure when tested in steam of 180.degree. C. and 10 atm for 10 hours. The monoclinic crystal structure does not exceed 5 volume % when tested in an atmosphere of 300.degree. C. for 3000 hours. These zirconia base ceramics are stable in the presence of moisture under low temperatures of approximately 200.degree.-400.degree. C.
摘要翻译：本发明由具有高水热稳定性的氧化锆碱组成，其中：（a）基本上由至少40重量％的ZrO 2 -Y 2 O 3 -TeO 2体系的部分稳定的氧化锆组成，其中ZrO 2，Y 2 O 3和CeO 2的比例在所限定的范围内通过在三元图（ZrO 2，YO 1.5，CeO 2）中连接点F，G，L，M，N和K的线，所述点的顶点由以下摩尔％的ZrO 2，YO 1.5和 CeO 2分别为：F（88,10,2），G（89,10,1），L（93.5,4,2.5），M（93,2,5），N（88,1,11）和 K（86,1.13）和3〜60重量％的Al 2 O 3，MgO·Al 2 O 3，尖晶石和莫来石中的至少一种，（b）的平均结晶粒径不超过2微米，至少100kgf / mm2，当在180℃和10atm的蒸汽中测试10小时时，所述ZrO 2含有至少50体积％的四方晶体结构和最多5体积％的单斜晶体结构。当在300℃的气氛中测试3000小时时，单斜晶体结构不超过5体积％。这些氧化锆基陶瓷在约200-400℃的低温下在水分存在下是稳定的。

66. 发明授权

US4313074A Servo control system operable on digital basis 失效
标题翻译：伺服控制系统可以数字化操作
公开(公告)号：US4313074A
公开(公告)日：1982-01-26
申请号：US144131
申请日：1980-04-28
申请人： Tadashi Nomura , Hiroshi Inada , Keizo Morita , Akio Watanabe , Kiyoaki Nishikawa
发明人： Tadashi Nomura , Hiroshi Inada , Keizo Morita , Akio Watanabe , Kiyoaki Nishikawa
IPC分类号： G05B19/23 , G05B19/35 , G05B1/01
CPC分类号： G05B19/353 , G05B19/232
摘要： A digital servo control system is responsive to a command signal indicative of a command position of a moveable element and to a phase modulated signal corresponding to the angle of rotation of a motor controlling said moveable element to develop a motor drive signal to position the motor. The system provides control during a velocity control mode and a position control mode, the latter occurring after the moveable element is moved to a predetermined small incremental distance from the commanded position. During the velocity control mode the motor is driven in accordance with a reference velocity selected in dependence upon the position error signal. Following a prescribed time after entry into the position control mode, the position error has added thereto an integration signal which increases in the same sense as the position error.
摘要翻译：数字伺服控制系统响应于指示可移动元件的指令位置的指令信号和对应于控制所述可移动元件的电动机的旋转角度的相位调制信号，以形成电动机驱动信号以定位电动机。该系统在速度控制模式和位置控制模式期间提供控制，后者发生在可移动元件移动到距命令位置的预定的小增量距离之后。在速度控制模式期间，根据位置误差信号选择的参考速度来驱动电动机。在进入位置控制模式之后的规定时间之后，位置误差增加了与位置误差相同的积分信号。

67. 发明授权

US09312422B2 Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element, method for manufacturing the semiconductor epitaxial wafer, and detecting device 有权
标题翻译：光接收元件，半导体外延晶片，用于制造光接收元件的方法，制造半导体外延晶片的方法和检测器件
公开(公告)号：US09312422B2
公开(公告)日：2016-04-12
申请号：US13991129
申请日：2011-11-29
申请人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
发明人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
IPC分类号： H01L29/06 , H01L31/109 , B82Y20/00 , H01L27/144 , H01L31/0352 , H01L31/075 , H01L21/02 , H01L31/0304 , H01L31/105 , H01L31/18 , H01L27/146
CPC分类号： H01L31/109 , B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02505 , H01L21/02546 , H01L21/02549 , H01L27/1446 , H01L27/1464 , H01L31/0304 , H01L31/035236 , H01L31/075 , H01L31/105 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.
摘要翻译：光接收元件包括对波长为3〜12μm的光透明的InP衬底，与InP衬底接触的缓冲层和具有多量子阱结构的光接收层，受光元件具有3μm以上的截止波长并与缓冲层进行晶格匹配的层。在光接收元件中，缓冲层在InP衬底上外延生长，而缓冲层和InP衬底超过正常晶格匹配条件的范围，缓冲层由GaSb层构成。

68. 发明授权

US08969851B2 Detection device, photodiode array, and method for manufacturing the same 有权
标题翻译：检测装置，光电二极管阵列及其制造方法
公开(公告)号：US08969851B2
公开(公告)日：2015-03-03
申请号：US12965660
申请日：2010-12-10
申请人： Hiroshi Inada , Yasuhiro Iguchi , Youichi Nagai , Hiroki Mori , Kouhei Miura
发明人： Hiroshi Inada , Yasuhiro Iguchi , Youichi Nagai , Hiroki Mori , Kouhei Miura
IPC分类号： H01L29/06 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/14618 , H01L27/14634 , H01L27/1469 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.
摘要翻译：本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。

69. 发明授权

US08822977B2 Photodetector and method of manufacturing the photodetector 有权
标题翻译：光电探测器及其制造方法
公开(公告)号：US08822977B2
公开(公告)日：2014-09-02
申请号：US13806585
申请日：2011-06-15
申请人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Hideaki Nakahata , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Hideaki Nakahata , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
IPC分类号： H01L29/06 , H01L31/18 , H01L31/0352 , H01L31/0304 , B82Y20/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/18 , H01L31/1844 , Y02E10/544
摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.
摘要翻译：提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度。在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

70. 发明申请

US20130313521A1 PHOTODIODE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：光致变色剂及其制造方法
公开(公告)号：US20130313521A1
公开(公告)日：2013-11-28
申请号：US14000187
申请日：2012-02-03
申请人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
IPC分类号： H01L31/0352
CPC分类号： H01L31/035209 , B82Y20/00 , C30B25/183 , C30B29/40 , C30B29/42 , C30B29/68 , H01L31/035236 , H01L31/109 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.
摘要翻译：本发明的一个目的是提供例如在1.5μm至1.8μm的近红外波长范围内具有足够高灵敏度的光电二极管，并且可以具有低暗电流。根据本发明的光电二极管（10）包括位于InP衬底（1）上并与InP衬底（1）接触的缓冲层（2）和位于缓冲层上并与缓冲层接触的吸收层（3），其中吸收层包括50个或更多对，其中第一半导体层3a和第二半导体层3b构成单对，第一半导体层3a的带隙能为0.73eV以下，第二半导体层3b的带隙能量比第一半导体层3a，第一半导体层3a和第二半导体层3b构成应变补偿量子阱结构，并且各自具有1nm以上且10nm以下的厚度。

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