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1. 发明授权

US09190544B2 Photodiode, optical sensor device, and photodiode manufacturing method 有权
标题翻译：光电二极管，光传感器装置和光电二极管的制造方法
公开(公告)号：US09190544B2
公开(公告)日：2015-11-17
申请号：US13581863
申请日：2011-09-28
申请人： Kei Fujii , Takashi Ishizuka , Katsushi Akita , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Kei Fujii , Takashi Ishizuka , Katsushi Akita , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , B82Y20/00 , H01L31/105 , H01L31/18 , H01L27/146 , H01L29/15
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14647 , H01L27/14652 , H01L29/15 , H01L31/105 , H01L31/1844 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.
摘要翻译：提供能够防止短波长侧的响应性劣化的光电二极管等，同时完全提高II型MQW结构的响应性。光电二极管形成在III-V族化合物半导体衬底上，并包括像素。光电二极管包括位于基板上的II型MQW结构的吸收层。 MQW结构包括五对或更多对两种不同类型的III-V族化合物半导体层。两种不同类型的III-V族化合物半导体层之一的厚度，该层具有较高的价带电势，其厚度比另一层的厚度薄。

2. 发明授权

US09090266B2 Railway vehicle 有权
标题翻译：铁路车辆
公开(公告)号：US09090266B2
公开(公告)日：2015-07-28
申请号：US13696977
申请日：2011-04-15
申请人： Koji Nakao , Kentaro Hayashi , Takashi Ishizuka , Masaru Kuroda
发明人： Koji Nakao , Kentaro Hayashi , Takashi Ishizuka , Masaru Kuroda
IPC分类号： B61D17/00 , B61D15/06 , B61D17/06 , B61D17/08 , B61F1/10
CPC分类号： B61D17/00 , B61D15/06 , B61D17/06 , B61D17/08 , B61F1/10
摘要： A railway vehicle includes an underframe, side structures, end structures, and a roof structure which form a vehicle body with a crushable zone. In the crushable zone, a slide center beam and a guide center beam are connected with each other by a lower fuse member, and a slide bar and guide frame are connected with each other by an upper fuse member. When the fuse members are broken, upper and lower slide portions are brought into a slidable state.
摘要翻译：铁路车辆包括底架，侧面结构，端部结构和形成具有可压碎区域的车体的屋顶结构。在可压碎区域中，滑动中心梁和引导中心梁通过下部保险丝构件彼此连接，并且滑动杆和引导框架通过上部保险丝构件彼此连接。当保险丝构件断裂时，上下滑动部分处于滑动状态。

3. 发明授权

US08921829B2 Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array 有权
标题翻译：光接收元件，光接收元件阵列，混合型检测装置，光学传感器装置和用于制造光接收元件阵列的方法
公开(公告)号：US08921829B2
公开(公告)日：2014-12-30
申请号：US13520007
申请日：2011-03-10
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L29/06 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14652 , H01L27/14694
摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.
摘要翻译：本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离，在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

4. 发明授权

US08866199B2 Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer 有权
标题翻译： III-V族化合物半导体光电检测器，III-V族化合物半导体光电检测器，光电检测器和外延晶片的制造方法
公开(公告)号：US08866199B2
公开(公告)日：2014-10-21
申请号：US13394650
申请日：2010-07-21
申请人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Youichi Nagai
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Youichi Nagai
IPC分类号： H01L31/00 , H01L27/148 , H01L31/0352 , H01L21/02 , H01L31/0304 , H01L31/109 , H01L31/18
CPC分类号： H01L31/035209 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L31/03042 , H01L31/03046 , H01L31/035236 , H01L31/109 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.
摘要翻译：本发明的目的是提供一种III-V族化合物半导体光电检测器，其包括具有含有Sb作为V族构成元素的III-V族化合物半导体层和n型InP窗口层的吸收层，得到在减少的暗电流。由于在吸收层21的GaAsSb层生长期间提供的锑的记忆效应，在吸收层23上生长的InP层23含有锑作为杂质。在III-V族化合物半导体光电检测器11中， InP层23含有锑作为杂质，并掺杂有硅作为n型掺杂剂。虽然InP层23中的锑杂质产生空穴，但是包含在InP层23中的硅补偿所生成的载流子。结果，InP层23的第二部分23d具有足够的n型导电性。

5. 发明授权

US08707872B2 Railway vehicle 有权
标题翻译：铁路车辆
公开(公告)号：US08707872B2
公开(公告)日：2014-04-29
申请号：US13696955
申请日：2011-04-15
申请人： Masaru Kuroda , Koji Nakao , Kentaro Hayashi , Takashi Ishizuka
发明人： Masaru Kuroda , Koji Nakao , Kentaro Hayashi , Takashi Ishizuka
IPC分类号： B61D25/00
CPC分类号： B61D17/00 , B61D15/06 , B61D17/06 , B61D17/08 , B61F1/10
摘要： Provided is a railway vehicle having a configuration which can sufficiently protect the cabin even when large external force is applied to the end structures thereof. The vehicle body of the railway vehicle is formed by joining an underframe 20, side structures 30, end structures 50, and a roof structure 60 together. An upper reinforcement beam 56 in the railroad tie direction is disposed at the upper portion of the end structure. A plurality of post reinforcement members are disposed in the vertical direction so as to stand on an end beam 26 of the underframe. The post reinforcement members and the upper reinforcement beam are respectively connected by an end post in the vertical direction disposed at an intermediate portion in the end structure width direction and corner posts 54 in the vertical direction disposed at both end portions in the end structure width direction. The respective post reinforcement members are inserted from the front side into the end post and the corner posts through openings 53a, 54a disposed on the vehicle body inner sides of the end post and the corner posts, and then the end structure is moved in a horizontal direction so as to be assembled.
摘要翻译：提供一种铁路车辆，其具有能够充分保护车厢的构造，即使当其外部力施加到其端部结构时也是如此。轨道车辆的车身通过将底架20，侧面结构30，端部结构50和屋顶结构60连接在一起而形成。铁路连接方向上的上加强梁56设置在端部结构的上部。多个后加强构件沿垂直方向设置成立在底架的端梁26上。后加强构件和上加强梁分别通过设置在端部结构宽度方向上的中间部分的垂直方向的端柱和端部结构宽度方向上的两端部处的垂直方向的角柱54连接。各个后加强构件从前侧插入端柱，并且角柱通过设置在端柱和车架的车身内侧上的开口53a，54a，然后端部结构在水平方向上移动方向组装。

6. 发明授权

US08642943B2 Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer 有权
标题翻译：半导体晶片，受光元件，受光元件阵列，混合型检测装置，光学传感器装置以及半导体晶片的制造方法
公开(公告)号：US08642943B2
公开(公告)日：2014-02-04
申请号：US13640922
申请日：2010-12-03
申请人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L31/101 , H01L31/18 , H01L33/06
CPC分类号： H01L31/03046 , B82Y20/00 , H01L27/1446 , H01L27/1467 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
摘要翻译：光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

7. 发明申请

US20130125782A1 RAILWAY VEHICLE 有权
标题翻译：铁路车辆
公开(公告)号：US20130125782A1
公开(公告)日：2013-05-23
申请号：US13696938
申请日：2011-04-15
申请人： Takashi Ishizuka , Masaru Kuroda , Koji Nakao , Takamitsu Sassa
发明人： Takashi Ishizuka , Masaru Kuroda , Koji Nakao , Takamitsu Sassa
IPC分类号： B61D17/00
CPC分类号： B61D17/00 , B61D15/06 , B61D17/06 , B61D17/08 , B61F1/10
摘要： Provided is a railway vehicle having a configuration which can sufficiently protect the cabin even when large external force is applied to the side structures and the end structures thereof. The vehicle body of the railway vehicle is formed by joining an underframe 20, side structures 30, end structures 50, and a roof structure 60 together. The lower inner face of the side post 31 of the side structure is joined to the outer face portion of a side beam 21 of the underframe. The lower inner faces of the post reinforcement members (an end post reinforcement member 57 and a corner post reinforcement member 58) for reinforcing the post members (an end post 53 and a corner post 54) of the end structure are joined to the outer face portion of an end beam 26 of the underframe.
摘要翻译：提供一种铁路车辆，其具有能够充分保护车厢的结构，即使当大的外力施加到侧面结构及其端部结构时。轨道车辆的车身通过将底架20，侧面结构30，端部结构50和屋顶结构60连接在一起而形成。侧面结构的侧柱31的下内表面与底架的侧梁21的外表面部分接合。用于加强端部结构的柱构件（端柱53和角柱54）的后加强构件（端柱加强构件57和角柱加强构件58）的下内表面接合到外表面底架的端梁26的一部分。

8. 发明申请

US20130098264A1 RAILWAY VEHICLE 有权
标题翻译：铁路车辆
公开(公告)号：US20130098264A1
公开(公告)日：2013-04-25
申请号：US13696955
申请日：2011-04-15
申请人： Masaru Kuroda , Koji Nakao , Kentaro Hayashi , Takashi Ishizuka
发明人： Masaru Kuroda , Koji Nakao , Kentaro Hayashi , Takashi Ishizuka
IPC分类号： B61D17/00
CPC分类号： B61D17/00 , B61D15/06 , B61D17/06 , B61D17/08 , B61F1/10
摘要： Provided is a railway vehicle having a configuration which can sufficiently protect the cabin even when large external force is applied to the end structures thereof. The vehicle body of the railway vehicle is formed by joining an underframe 20, side structures 30, end structures 50, and a roof structure 60 together. An upper reinforcement beam 56 in the railroad tie direction is disposed at the upper portion of the end structure. A plurality of post reinforcement members are disposed in the vertical direction so as to stand on an end beam 26 of the underframe. The post reinforcement members and the upper reinforcement beam are respectively connected by an end post in the vertical direction disposed at an intermediate portion in the end structure width direction and corner posts 54 in the vertical direction disposed at both end portions in the end structure width direction. The respective post reinforcement members are inserted from the front side into the end post and the corner posts through openings 53a, 54a disposed on the vehicle body inner sides of the end post and the corner posts, and then the end structure is moved in a horizontal direction so as to be assembled.
摘要翻译：提供一种铁路车辆，其具有能够充分保护车厢的构造，即使当其外部力施加到其端部结构时也是如此。轨道车辆的车身通过将底架20，侧面结构30，端部结构50和屋顶结构60连接在一起而形成。铁路连接方向上的上加强梁56设置在端部结构的上部。多个后加强构件沿垂直方向设置成立在底架的端梁26上。后加强构件和上加强梁分别通过设置在端部结构宽度方向上的中间部分的垂直方向的端柱和端部结构宽度方向上的两端部处的垂直方向的角柱54连接。各个后加强构件从前侧插入端柱，并且角柱通过设置在端柱和车架的车身内侧上的开口53a，54a，然后端部结构在水平方向上移动方向组装。

9. 发明申请

US20120196398A1 PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER 有权
标题翻译：光致抗体阵列，制造光电子阵列的方法，外延波形和制造外延波形的方法
公开(公告)号：US20120196398A1
公开(公告)日：2012-08-02
申请号：US13446621
申请日：2012-04-13
申请人： Katsushi AKITA , Takashi ISHIZUKA , Kei FUJII , Youichi NAGAI , Hideaki NAKAHATA
发明人： Katsushi AKITA , Takashi ISHIZUKA , Kei FUJII , Youichi NAGAI , Hideaki NAKAHATA
IPC分类号： H01L31/18
CPC分类号： H01L27/14694 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L21/02549 , H01L21/2258 , H01L31/035236 , H01L31/109 , H01L31/1844
摘要： Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.
摘要翻译：提供一种光电二极管阵列及其制造方法，其保持形成在III-V族半导体衬底上的吸收层的结晶质量，以获得优异的特性，并提高窗口层表面的结晶度; 用于制造光电二极管阵列的外延晶片; 以及制造外延晶片的方法。制造具有多个吸收区域21的光电二极管阵列1的方法包括以下步骤：在n型InP衬底3上生长吸收层7; 在吸收层7上生长InP窗口层; 并且在窗层11中对应于多个吸收区域21的区域中扩散p型杂质。窗口层11通过仅使用金属有机源的MOVPE生长，生长温度等于或低于的吸收层7。

10. 发明授权

US4101488A Water-soluble heat-resistant insulating varnish 失效
标题翻译：水溶性耐热绝缘漆
公开(公告)号：US4101488A
公开(公告)日：1978-07-18
申请号：US617135
申请日：1975-09-26
申请人： Takashi Ishizuka , Naoki Miwa
发明人： Takashi Ishizuka , Naoki Miwa
IPC分类号： C08G73/00 , C08G73/16 , C09D5/25 , C09D179/08 , H01B3/30 , H01B7/29 , C08J3/08 , C08L79/08
CPC分类号： C09D179/08 , C08G73/16 , C08K3/20 , H01B3/306 , H01B3/308 , H01B7/292
摘要： A water-soluble heat-resistant insulating varnish containing a resin comprising ester groups and imide rings in the molecule dissolved in water using a volatilizable basic compound, the resin comprising the reaction product of(A) a carboxyl-containing polyesterimide resin having an acid value of about 30 to 150 obtained by reacting (a) a polyhydric alcohol component comprising at least one organic polyhydric alcohol and containing about 10 to 60 mol % of an imide ring-containing glycol of the general formula (I): ##STR1## wherein R.sub.1 is a trivalent aromatic group, R.sub.2 is a divalent organic group, and n is an integer of 1 to 3, with (b) a polycarboxylic acid component comprising at least one trivalent or divalent organic carboxylic acid or the anhydride thereof, where about 30 to 100 mol % of which comprises an aromatic tricarboxylic acid or the anhydride thereof so that the equivalent ratio (OH/COOH) between the polyhydric alcohol component and the polycarboxylic acid component is about 1.0 to 2.0;(B) 1,2,3,4-butanetetracarboxylic acid or an imide-forming derivative thereof; and(C) an organic diamine.
摘要翻译：一种水溶性耐热绝缘漆，其含有使用可挥发性碱性化合物溶解在水中的分子中的酯基和酰亚胺环的树脂，所述树脂包含（A）含羧基的聚酯酰亚胺树脂的反应产物，其具有酸值通过使（a）包含至少一种有机多元醇的多元醇组分和含有约10至60mol％的通式（I）的含酰亚胺环的二醇反应获得的约30至150：）其中R1为三价芳族基团，R2为二价有机基团，n为1〜3的整数，（b）含有至少一种三价或二价有机羧酸或其酸酐的多元羧酸成分，其中其中约30至100摩尔％包括芳族三羧酸或其酸酐，使得多元醇组分和多元羧酸组分之间的当量比（OH / COOH）为ab 1.0〜2.0;

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