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1. 发明申请

US20130248821A1 LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE LIGHT RECEIVING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR EPITAXIAL WAFER, AND DETECTING DEVICE 有权
标题翻译：光接收元件，半导体外延波形，用于制造光接收元件的方法，制造半导体外延波形的方法和检测器件
公开(公告)号：US20130248821A1
公开(公告)日：2013-09-26
申请号：US13991129
申请日：2011-11-29
申请人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
发明人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
IPC分类号： H01L31/109
CPC分类号： H01L31/109 , B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02505 , H01L21/02546 , H01L21/02549 , H01L27/1446 , H01L27/1464 , H01L31/0304 , H01L31/035236 , H01L31/075 , H01L31/105 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.
摘要翻译：光接收元件包括对波长为3〜12μm的光透明的InP衬底，与InP衬底接触的缓冲层和具有多量子阱结构的光接收层，受光元件具有3μm以上的截止波长并与缓冲层进行晶格匹配的层。在光接收元件中，缓冲层在InP衬底上外延生长，而缓冲层和InP衬底超过正常晶格匹配条件的范围，缓冲层由GaSb层构成。

2. 发明授权

US09312422B2 Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element, method for manufacturing the semiconductor epitaxial wafer, and detecting device 有权
标题翻译：光接收元件，半导体外延晶片，用于制造光接收元件的方法，制造半导体外延晶片的方法和检测器件
公开(公告)号：US09312422B2
公开(公告)日：2016-04-12
申请号：US13991129
申请日：2011-11-29
申请人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
发明人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
IPC分类号： H01L29/06 , H01L31/109 , B82Y20/00 , H01L27/144 , H01L31/0352 , H01L31/075 , H01L21/02 , H01L31/0304 , H01L31/105 , H01L31/18 , H01L27/146
CPC分类号： H01L31/109 , B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02505 , H01L21/02546 , H01L21/02549 , H01L27/1446 , H01L27/1464 , H01L31/0304 , H01L31/035236 , H01L31/075 , H01L31/105 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.
摘要翻译：光接收元件包括对波长为3〜12μm的光透明的InP衬底，与InP衬底接触的缓冲层和具有多量子阱结构的光接收层，受光元件具有3μm以上的截止波长并与缓冲层进行晶格匹配的层。在光接收元件中，缓冲层在InP衬底上外延生长，而缓冲层和InP衬底超过正常晶格匹配条件的范围，缓冲层由GaSb层构成。

3. 发明申请

US20120223290A1 LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY 有权
标题翻译：光接收元件，光接收元件阵列，制造光接收元件的方法和制造光接收元件阵列的方法
公开(公告)号：US20120223290A1
公开(公告)日：2012-09-06
申请号：US13451031
申请日：2012-04-19
申请人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02631 , H01L27/14683 , H01L31/03046 , H01L31/102 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.
摘要翻译：光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。叠层结构形成在III-V族化合物半导体衬底上。吸收层具有由III-V族化合物半导体组成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

4. 发明授权

US08188559B2 Light-receiving element and light-receiving element array 有权
标题翻译：光接收元件和光接收元件阵列
公开(公告)号：US08188559B2
公开(公告)日：2012-05-29
申请号：US13061367
申请日：2009-07-24
申请人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L27/14 , H01L31/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02631 , H01L27/14683 , H01L31/03046 , H01L31/102 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same.A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3 having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016 cm−3 or less. A diffusion concentration distribution control layer 4 has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.
摘要翻译：提供一种在近红外区域具有灵敏度并且容易获得良好的晶体质量的光接收元件，容易以高精度形成光接收元件的一维或二维阵列，并且可以减小暗电流; 光接收元件阵列; 及其制造方法。光接收元件包括其中具有pn结15的吸收层3的III-V族化合物半导体层叠结构，其中吸收层具有由III-V族化合物半导体构成的多量子阱结构，pn结通过选择性地将杂质元素扩散到吸收层中，并且吸收层中的杂质元素的浓度为5×10 16 cm -3以下而形成。扩散浓度分布控制层4在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与吸收层相邻的部分，杂质浓度低的部分。

5. 发明申请

US20110140082A1 LIGHT-RECEIVING ELEMENT AND LIGHT-RECEIVING ELEMENT ARRAY 有权
标题翻译：光接收元件和光接收元件阵列
公开(公告)号：US20110140082A1
公开(公告)日：2011-06-16
申请号：US13061367
申请日：2009-07-24
申请人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L29/06
CPC分类号： H01L31/035236 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02631 , H01L27/14683 , H01L31/03046 , H01L31/102 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same.A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3 having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016 cm−3 or less. A diffusion concentration distribution control layer 4 has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.
摘要翻译：提供一种在近红外区域具有灵敏度并且容易获得良好的晶体质量的光接收元件，容易以高精度形成光接收元件的一维或二维阵列，并且可以减小暗电流; 光接收元件阵列; 及其制造方法。光接收元件包括其中具有pn结15的吸收层3的III-V族化合物半导体层叠结构，其中吸收层具有由III-V族化合物半导体构成的多量子阱结构，pn结通过选择性地将杂质元素扩散到吸收层中，并且吸收层中的杂质元素的浓度为5×10 16 cm -3以下而形成。扩散浓度分布控制层4在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与吸收层相邻的部分，杂质浓度低的部分。

6. 发明授权

US08729527B2 Light-receiving element, light-receiving element array, method for manufacturing light-receiving element and method for manufacturing light-receiving element array 有权
标题翻译：光接收元件，光接收元件阵列，光接收元件的制造方法和光接收元件阵列的制造方法
公开(公告)号：US08729527B2
公开(公告)日：2014-05-20
申请号：US13451031
申请日：2012-04-19
申请人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02631 , H01L27/14683 , H01L31/03046 , H01L31/102 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.
摘要翻译：光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。叠层结构形成在III-V族化合物半导体衬底上。吸收层具有由III-V族化合物半导体构成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

7. 发明授权

US08513759B2 Photodiode array 有权
标题翻译：光电二极管阵列
公开(公告)号：US08513759B2
公开(公告)日：2013-08-20
申请号：US12906858
申请日：2010-10-18
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L27/146
CPC分类号： H01L27/1446 , H01L31/1035 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.
摘要翻译：包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度的氮，制造光电二极管阵列的方法和光学测量系统。在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，该开口设置在一维或二维中，并且选择性地生长多个半导体层3a，3b 和包括开口中的吸收层3b的3c。

8. 发明申请

US20130099203A1 PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR 有权
标题翻译：光电转换器和制造光电转换器的方法
公开(公告)号：US20130099203A1
公开(公告)日：2013-04-25
申请号：US13806585
申请日：2011-06-15
申请人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Hideaki Nakahata , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Hideaki Nakahata , Youichi Nagai , Hiroshi Inada , Yasuhiro Iguchi
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/18 , H01L31/1844 , Y02E10/544
摘要： A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.
摘要翻译：提供了一种光电检测器和制造该光检测器的方法，其中在从包括1.3μm到长波长侧的短波长侧的近红外区域上抑制了灵敏度的变化。光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度。 1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

9. 发明申请

US20120298957A1 LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY 有权
标题翻译：光接收元件，光接收元件阵列，混合型检测装置，光传感器装置和用于产生接收元件阵列的方法
公开(公告)号：US20120298957A1
公开(公告)日：2012-11-29
申请号：US13520007
申请日：2011-03-10
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14652 , H01L27/14694
摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.
摘要翻译：本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离，在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

10. 发明申请

US20120217478A1 SEMICONDUCTOR DEVICE, OPTICAL SENSOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件，光传感器器件和半导体器件制造方法
公开(公告)号：US20120217478A1
公开(公告)日：2012-08-30
申请号：US13505226
申请日：2011-05-19
申请人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01L31/1844
摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.
摘要翻译：提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。此外，提供了一种用于制造半导体器件的方法。半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

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