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61. 发明授权

US07462526B2 Method for fabricating semiconductor devices using strained silicon bearing material 失效
标题翻译：使用应变硅轴承材料制造半导体器件的方法
公开(公告)号：US07462526B2
公开(公告)日：2008-12-09
申请号：US11149783
申请日：2005-06-09
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L21/00
CPC分类号： H01L29/045 , H01L29/78 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a strain mode characterized by a first tensile and/or compressive mode along a single film surface crystal axis across a first portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method patterns a predetermined region of the first portion of the film of material to cause the first tensile and/or compressive mode in the first portion of the film of material to change to a second tensile and/or compressive mode in a resulting patterned portion of the first portion of the film of material. In a preferred embodiment, the patterns are made using a masking and etching process.
摘要翻译：一种在诸如硅晶片的半导体衬底上制造集成电路的方法。该方法包括提供一种半导体衬底，其特征在于具有第一结构和第一间隔的第一晶格。在一个具体的实施例中，半导体衬底具有覆盖的材料膜，具有第二晶格和第二间隔的材料，第二间隔将材料膜放置在以第一拉伸和/或压缩模式为特征的应变模式中相对于具有第一结构和第一间隔的半导体衬底的材料膜的第一部分上的单个膜表面晶轴。该方法将材料膜的第一部分的预定区域图案化以使材料膜的第一部分中的第一拉伸和/或压缩模式在所得到的图案部分中变为第二拉伸和/或压缩模式的材料的第一部分。在优选实施例中，使用掩模和蚀刻工艺制造图案。

62. 发明申请

US20080160661A1 Method and structure for fabricating solar cells using a layer transfer process 有权
标题翻译：使用层转移工艺制造太阳能电池的方法和结构
公开(公告)号：US20080160661A1
公开(公告)日：2008-07-03
申请号：US11784524
申请日：2007-04-05
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： H01L31/18 , H01L21/67
CPC分类号： H01L31/18 , Y10T29/41
摘要： A reusable silicon substrate device for use with layer transfer process. The device has a reusable substrate having a surface region, a cleave region, and a total thickness of material. The total thickness of material is at least N times greater than a first thickness of material to be removed. In a specific embodiment, the first thickness of material to be removed is between the surface region and the cleave region, whereupon N is an integer greater than about ten. The device also has a chuck member adapted to hold a handle substrate member in place. The chuck member is configured to hold the handle substrate in manner to facilitate bonding the handle substrate to the first thickness of material to be removed. In a preferred embodiment, the device has a mechanical pressure device operably coupled to the chuck member. The mechanical pressure device is adapted to provide a force to cause bonding of the handle substrate to the first thickness of material to be removed.
摘要翻译：一种可重复使用的硅衬底器件，用于层间传输工艺。该装置具有可重复使用的基底，其具有表面区域，切割区域和材料的总厚度。材料的总厚度比要去除的材料的第一厚度至少大N倍。在具体实施方案中，待除去的材料的第一厚度在表面区域和解理区域之间，因此N是大于约十的整数。该装置还具有适于将手柄基板部件保持在适当位置的卡盘部件。卡盘构件被构造成以便于将手柄衬底粘合到要移除的材料的第一厚度的方式保持手柄衬底。在优选实施例中，该装置具有可操作地联接到卡盘构件的机械压力装置。机械压力装置适于提供力以引起手柄基板与要去除的材料的第一厚度的结合。

63. 发明授权

US06558802B1 Silicon-on-silicon hybrid wafer assembly 有权
标题翻译：硅上硅杂化晶片组件
公开(公告)号：US06558802B1
公开(公告)日：2003-05-06
申请号：US09515253
申请日：2000-02-29
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： B32B900
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.
摘要翻译：一种混合硅硅衬底。将单晶硅的薄膜（2101）接合到目标晶片（46）上。在高温退火过程中，在薄膜和目标晶片之间形成高质量的结合。相信高温退火工艺在界面处形成层间的共价键（2305）。所得到的混合晶片适用于集成电路制造工艺，类似于具有外延层的晶片。

64. 发明授权

US06548382B1 Gettering technique for wafers made using a controlled cleaving process 有权
标题翻译：使用受控切割工艺制造的晶圆的吸收技术
公开(公告)号：US06548382B1
公开(公告)日：2003-04-15
申请号：US09631891
申请日：2000-08-04
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21425
CPC分类号： H01L21/3223 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/2658 , H01L21/3226 , H01L21/76254
摘要： A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantation, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.
摘要翻译：一种在使用受控断裂工艺制成的晶圆中形成吸气层的技术。吸气层可以通过使用束线或等离子体浸没离子注入进行注入，或者通过通过化学气相沉积形成诸如多晶硅的材料的膜制成。使用受控的裂解工艺来形成绝缘体上多层硅衬底的晶片。吸杂层去除和/或吸引晶片中的杂质，这可能不利于在晶片上制成的集成电路器件的功能和可靠性。

65. 发明授权

US06526997B1 Dry cleaning method for the manufacture of integrated circuits 失效
标题翻译：用于制造集成电路的干洗方法
公开(公告)号：US06526997B1
公开(公告)日：2003-03-04
申请号：US09642284
申请日：2000-08-18
申请人： Francois J. Henley
发明人： Francois J. Henley
IPC分类号： C25F500
CPC分类号： H01L21/02046 , B08B6/00 , B08B7/0035 , H01L21/31116 , Y10S134/902 , Y10S438/906
摘要： A method for manufacturing an integrated circuit device. The method includes retrieving an in process substrate comprising one or more particles from an input chamber, which is coupled to a chamber for a robot arm, which is maintained under a predetermined environment. The method moves the substrate from the input chamber into a cleaning chamber, which is coupled to the robot arm chamber. The method places the substrate onto a susceptor in the cleaning chamber; and applies a high energy photon from a high energy photon source onto a surface of a substrate to release the one or more particles from the surface of the substrate while the substrate is maintained in the predetermined environment. The method also applies an electrostatic force from an electrode directed to the substrate to attract the released one or more particles from the substrate to remove the one or more particles from the surface of the substrate, where upon the electrostatic force prevents a possibility of the one or more particles from redistributing back onto the surface of the substrate.
摘要翻译：一种集成电路器件的制造方法。该方法包括从输入室检索包括一个或多个颗粒的处理衬底，该输入室被连接到保持在预定环境下的用于机器人手臂的腔室。该方法将基板从输入室移动到清洁室中，该清洁室联接到机器人手臂室。该方法将基板放置在清洁室中的基座上; 并且将来自高能光子源的高能光子施加到衬底的表面上以在衬底保持在预定环境中的同时从衬底的表面释放一个或多个粒子。该方法还施加来自引导到基板的电极的静电力以从基板吸引释放的一个或多个颗粒以从基板的表面去除一个或多个颗粒，其中当静电力防止一个或更多的颗粒重新分布回到基底的表面上。

66. 发明授权

US06500732B1 Cleaving process to fabricate multilayered substrates using low implantation doses 有权
标题翻译：使用低植入剂量制造多层底物的切割过程
公开(公告)号：US06500732B1
公开(公告)日：2002-12-31
申请号：US09626532
申请日：2000-07-27
申请人： Francois J. Henley , Michael A. Brayan , William G. En
发明人： Francois J. Henley , Michael A. Brayan , William G. En
IPC分类号： H01L2130
CPC分类号： H01L21/76254 , Y10T156/1158
摘要： A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also includes forming a device layer on the cleave layer. The method also includes selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region. Selected energy is provided to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.
摘要翻译：一种形成基底的方法。该方法包括提供施主衬底; 以及在所述供体基底上形成包含解理面的切割层。解理面从施主衬底的周边延伸穿过衬底的中心区域。该方法还包括在切割层上形成器件层。该方法还包括选择性地沿着解理面的周边引入多个粒子，以在中心区域的周边形成较高的浓度区域，并在中心区域形成较低的浓度区域。选择的能量提供给施主衬底，以在分裂面周边的较高浓度区域处引发裂解作用，以在分裂面处切割器件层。

67. 发明授权

US06294814B1 Cleaved silicon thin film with rough surface 有权
标题翻译：切割的硅薄膜具有粗糙的表面
公开(公告)号：US06294814B1
公开(公告)日：2001-09-25
申请号：US09379996
申请日：1999-08-24
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L2900
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
摘要翻译：一种用于从供体衬底（10）形成材料（12）的膜的技术。该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12）高于所选深度。能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的部分供体基质。

68. 发明授权

US06291326B1 Pre-semiconductor process implant and post-process film separation 有权
标题翻译：预半导体工艺植入和后期膜分离
公开(公告)号：US06291326B1
公开(公告)日：2001-09-18
申请号：US09335222
申请日：1999-06-17
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01L21425
CPC分类号： H01L21/76254
摘要： A multilayercd substrate. The substrate has a plurality of particles defined in a pattern in the substrate at a selected depth underneath the surface of the substrate. The particles are at a concentration at the selected depth to define a substrate material to be removed above the selected depth. The substrate material is removed after forming active devices on the substrate material using, for example, conventional semiconductor processing techniques. The pattern is defined in a manner to substantially prevent a possibility of detachment of the substrate material to be removed during conventional thermal processes of greater than about room temperature or greater than about 200 degrees Celsius.
摘要翻译：多层基板。衬底具有在衬底表面下方的选定深度处以衬底中的图案限定的多个颗粒。颗粒处于选定深度处的浓度，以限定要在所选深度以上去除的基材。使用例如常规的半导体处理技术在衬底材料上形成有源器件之后去除衬底材料。该图案的定义方式是基本上防止在大于约室温或大于约200摄氏度的常规热处理过程中将被去除的基底材料脱离的可能性。

69. 发明授权

US06245161B1 Economical silicon-on-silicon hybrid wafer assembly 失效
标题翻译：经济的硅上硅杂化晶片组件
公开(公告)号：US06245161B1
公开(公告)日：2001-06-12
申请号：US09026116
申请日：1998-02-19
申请人： Francois J. Henley , Nathan W. Cheung
发明人： Francois J. Henley , Nathan W. Cheung
IPC分类号： H01K2100
CPC分类号： H01L21/187 , B81C1/0038 , B81C2201/0191 , B81C2201/0192 , H01L21/2007 , H01L21/2236 , H01L21/26506 , H01L21/304 , H01L21/7624 , H01L21/76254 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977 , Y10T156/11 , Y10T156/1158 , Y10T156/19 , Y10T428/21 , Y10T428/24893 , Y10T428/249956
摘要： An economical hybrid wafer utilizing a lower-quality, lower cost transfer substrate to support a higher-quality thin film. A high-quality thin film (2101) is separated from a donor wafer (2100) and bonded to a transfer, or target, substrate (46). The donor wafer is preferably single-crystal silicon optimized for device fabrication, while the transfer substrate provides mechanical support. The thin film is not grown on the transfer substrate, and thus defects in the transfer substrate are not grown into the thin film. A low-temperature bonding process can provide an abrupt junction between the target wafer and the thin film.
摘要翻译：一种经济的混合晶圆，利用较低质量，低成本的转移基板来支持更高质量的薄膜。将高质量薄膜（2101）与施主晶片（2100）分离并结合到转移或靶基板（46）上。施主晶片优选是针对器件制造而优化的单晶硅，而转移衬底提供机械支撑。薄膜不会在转印衬底上生长，因此转印衬底中的缺陷不会生长到薄膜中。低温接合工艺可以在目标晶片和薄膜之间提供突然的接合。

70. 发明授权

US06207005B1 Cluster tool apparatus using plasma immersion ion implantation 失效
标题翻译：使用等离子体浸没离子注入的集群工具装置
公开(公告)号：US06207005B1
公开(公告)日：2001-03-27
申请号：US09124161
申请日：1998-07-28
申请人： Francois J. Henley , Nathan Cheung
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L2100
CPC分类号： H01L21/67167 , C23C14/48 , C23C14/54 , C23C14/56 , C23C16/54 , H01J37/32412 , H01J37/32743 , H01L21/67069 , H01L21/67092 , H01L21/67173 , H01L21/67213
摘要： A cluster tool assembly 10, 200, 300 using plasma immersion ion implantation chamber. In some embodiments, the cluster tool assembly also includes a controlled cleaving process chamber, as well as others.
摘要翻译：使用等离子体浸没离子注入室的簇工具组件10,200,300。在一些实施例中，群集工具组件还包括受控的分解处理室以及其它。

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