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61. 发明授权

US06177344B1 BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient 有权
标题翻译： BPSG回流方法可降低下一代设备的热预算，包括在蒸汽环境中加热
公开(公告)号：US06177344B1
公开(公告)日：2001-01-23
申请号：US09199911
申请日：1998-11-25
申请人： Li-Qun Xia , Richard A. Conti , Maria Galiano , Ellie Yieh
发明人： Li-Qun Xia , Richard A. Conti , Maria Galiano , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/31051 , H01L21/3105 , H01L21/31625
摘要： A multistep method for planarizing a silicon oxide insulating layer such as a deposited borophosphosilicate glass (BPSG) layer. The method includes several different planarization stages. During an initial, pre-planarization stage, a substrate having a BPSG layer deposited over it is loaded into a substrate processing chamber. Then, during a first planarization stage after the pre-planarization stage, oxygen and hydrogen are flowed into the substrate processing chamber to form a steam ambient in said chamber and the substrate is heated in the steam ambient from a first temperature to a second temperature. The first temperature is below a reflow temperature of the BPSG layer and the second temperature is sufficient to reflow the layer. After the substrate is heated to the second temperature during a second planarization stage, the temperature of the substrate and the conditions within the substrate processing chamber are maintained at conditions sufficient to reflow the BPSG layer in the steam ambient. In a more preferred embodiment, the multistep planarization method also includes a third planarization stage, after the second stage. In the third planarization stage, the flow of hydrogen is stopped while the flow of oxygen is maintained, thereby forming an oxygen ambient in the substrate processing chamber. The substrate temperature is maintained in the oxygen ambient at a temperature above the reflow temperature of the BPSG layer. It is believed that this additional step minimizes the amount of moisture incorporated into the reflowed BPSG layer.
摘要翻译：一种用于平坦化氧化硅绝缘层例如沉积的硼磷硅酸盐玻璃（BPSG）层的多步法。该方法包括几个不同的平坦化阶段。在初始预平坦化阶段期间，在其上沉积有BPSG层的衬底被加载到衬底处理室中。然后，在预平坦化阶段之后的第一平坦化阶段期间，氧气和氢气流入基板处理室以在所述室中形成蒸汽环境，并且基板在蒸汽环境中从第一温度加热到第二温度。第一温度低于BPSG层的回流温度，第二温度足以使该层回流。在第二平坦化阶段将衬底加热到第二温度之后，衬底的温度和衬底处理室内的条件保持在足以在蒸汽环境中回流BPSG层的条件。在更优选的实施例中，多级平面化方法还包括在第二级之后的第三平坦化级。在第三平坦化阶段，在保持氧气流的同时停止氢的流动，从而在衬底处理室中形成氧环境。在超过BPSG层的回流温度的温度下，将基板温度保持在氧环境中。据信这个附加步骤使并入回流的BPSG层中的水分量最小化。

62. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

63. 发明申请

US20050158667A1 Solvent free photoresist strip and residue removal processing for post etching of low-k films 审中-公开
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US20050158667A1
公开(公告)日：2005-07-21
申请号：US10761122
申请日：2004-01-20
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F7/00 , G03F7/36 , G03F7/42 , H01L21/02 , H01L21/311
CPC分类号： G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

64. 发明授权

US06753258B1 Integration scheme for dual damascene structure 失效
标题翻译：双镶嵌结构的整合方案
公开(公告)号：US06753258B1
公开(公告)日：2004-06-22
申请号：US09706298
申请日：2000-11-03
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Margaret Gotuaco
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Margaret Gotuaco
IPC分类号： H01L21302
CPC分类号： H01L21/76801 , H01L21/31608 , H01L21/76807 , H01L21/76834 , H01L21/76885 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for processing a substrate to form a feature in low k dielectric materials. One aspect of the invention provides a method for processing a substrate including forming a feature definition in a dielectric material deposited on a surface of a substrate, depositing one or more conductive materials to fill at least a portion of the feature definition, planarizing the substrate surface to expose the dielectric material, removing at least a portion of the dielectric material, and depositing a low k dielectric material.
摘要翻译：一种用于处理基底以在低k电介质材料中形成特征的方法和装置。本发明的一个方面提供一种处理衬底的方法，包括在沉积在衬底的表面上的电介质材料中形成特征定义，沉积一种或多种导电材料以填充特征定义的至少一部分，平坦化衬底表面以暴露电介质材料，去除介电材料的至少一部分，以及沉积低k电介质材料。

65. 发明授权

US06680164B2 Solvent free photoresist strip and residue removal processing for post etching of low-k films 失效
标题翻译：无溶剂的光致抗蚀剂条和残留物去除处理用于低k膜的后蚀刻
公开(公告)号：US06680164B2
公开(公告)日：2004-01-20
申请号：US10006563
申请日：2001-11-30
申请人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Mark Naoshi Kawaguchi , Mehul B. Naik , Li-Qun Xia , Ellie Yieh
IPC分类号： G03F742
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
摘要翻译：可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

66. 发明授权

US06569257B1 Method for cleaning a process chamber 失效
标题翻译：清洁处理室的方法
公开(公告)号：US06569257B1
公开(公告)日：2003-05-27
申请号：US09710357
申请日：2000-11-09
申请人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
IPC分类号： B08B300
CPC分类号： H01J37/32862 , C23C16/4405
摘要： A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.
摘要翻译：公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

67. 发明授权

US06500773B1 Method of depositing organosilicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06500773B1
公开(公告)日：2002-12-31
申请号：US09723886
申请日：2000-11-27
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/0276 , H01L21/3086 , H01L21/31144 , H01L21/3121 , H01L21/3122 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/32139 , H01L21/76807
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by reacting a gas mixture comprising a phenyl-based alkoxysilane compound. The gas mixture may be reacted by applying an electric field thereto. The gas mixture may optionally include an organosilane compound as well as an oxidizing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an anti-reflective coating (ARC). In another integrated circuit fabrication process, the organosilicate layer is used as a hardmask. In yet another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。有机硅酸盐层通过使包含苯基烷氧基硅烷化合物的气体混合物反应而形成。可以通过向其施加电场而使气体混合物反应。气体混合物可以任选地包括有机硅烷化合物以及氧化气体。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作抗反射涂层（ARC）。在另一集成电路制造工艺中，有机硅酸盐层用作硬掩模。在又一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

68. 发明授权

US6153261A Dielectric film deposition employing a bistertiarybutylaminesilane precursor 有权
标题翻译：使用二乙基丁基胺硅烷前体的介电薄膜沉积
公开(公告)号：US6153261A
公开(公告)日：2000-11-28
申请号：US322709
申请日：1999-05-28
申请人： Li-Qun Xia , Ellie Yieh
发明人： Li-Qun Xia , Ellie Yieh
IPC分类号： C23C16/34 , C23C16/40 , C23C16/52 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/318 , C23C16/30
CPC分类号： H01L21/0214 , C23C16/345 , C23C16/402 , C23C16/52 , H01L21/0217 , H01L21/02222 , H01L21/02271 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/3122
摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.
摘要翻译：一种用于提高沉积在基底上的介电膜在给定温度下的沉积速率的方法和装置，同时提供良好的阶梯覆盖和间隙填充性能。这通过使用二乙基丁基胺硅作为硅源与氧化剂反应以在包括硅的衬底上形成电介质膜来实现。

69. 发明授权

US5935340A Method and apparatus for gettering fluorine from chamber material surfaces 失效
标题翻译：从室材料表面吸除氟的方法和设备
公开(公告)号：US5935340A
公开(公告)日：1999-08-10
申请号：US747892
申请日：1996-11-13
申请人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
发明人： Li-Qun Xia , Visweswaren Sivaramakrishnan , Srinivas Nemani , Ellie Yieh , Gary Fong
IPC分类号： B08B7/00 , C23C16/44 , H01L21/00 , B08B6/00
CPC分类号： H01L21/67017 , B08B7/0035 , C23C16/4405
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高纵横比器件的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

70. 发明授权

US6121164A Method for forming low compressive stress fluorinated ozone/TEOS oxide film 失效
标题翻译：形成低压应力氟化臭氧/ TEOS氧化膜的方法
公开(公告)号：US6121164A
公开(公告)日：2000-09-19
申请号：US957058
申请日：1997-10-24
申请人： Ellie Yieh , Xin Zhang , Bang Nguyen , Stuardo Robles , Peter Lee
发明人： Ellie Yieh , Xin Zhang , Bang Nguyen , Stuardo Robles , Peter Lee
IPC分类号： C23C16/40 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02131 , C23C16/402 , H01L21/02274 , H01L21/02362 , H01L21/31629
摘要： A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5.times.10.sup.8 dynes/cm.sup.2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between about 60-650 torr. The relatively thin film, besides having a low dielectric constant and good gap fill capability, has low compressive stress, and is particularly suitable for use as an intermetal (IMD) layer.
摘要翻译：用于形成压电应力小于约-5×10 8达因/ cm 2的卤素掺杂氧化硅膜，优选氟化硅玻璃（FSG）膜的方法和装置。在一个具体的实施方案中，FSG膜通过在大约60-650托之间的压力下的低于大气压的CVD热处理形成。除了具有低介电常数和良好的间隙填充能力之外，相对薄的膜具有低的压缩应力，并且特别适合用作金属间（IMD）层。

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