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1. 发明授权

US5958510A Method and apparatus for forming a thin polymer layer on an integrated circuit structure 失效
标题翻译：在集成电路结构上形成薄聚合物层的方法和装置
公开(公告)号：US5958510A
公开(公告)日：1999-09-28
申请号：US583888
申请日：1996-01-08
申请人： Visweswaren Sivaramakrishnam , Bang C. Nguyen , Gayathri Rao , Stuardo Robles , Gary L. Fong , Vicente Lim , Peter W. Lee
发明人： Visweswaren Sivaramakrishnam , Bang C. Nguyen , Gayathri Rao , Stuardo Robles , Gary L. Fong , Vicente Lim , Peter W. Lee
IPC分类号： B05D7/24 , C23C16/44 , C23C16/452 , H01L21/312 , C23C16/00
CPC分类号： B05D1/60 , C23C16/44 , C23C16/452 , H01L21/312
摘要： A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the sublimation of stable dimer parylene material, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and for the optional blending of the resulting gaseous parylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the parylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.
摘要翻译：公开了用于在半导体衬底上形成薄聚合物层的方法和装置。在一个实施方案中，该方法和装置包括稳定的二聚聚对二甲苯材料的升华，这种气态二聚体材料的热解转化为反应性单体，以及任选地将得到的气体聚对二甲苯单体与一种或多种气态形式的可聚合材料混合与聚对二甲苯单体共聚以形成低介电常数的聚对二甲苯聚合物。还公开了一种设备，其提供可聚合气体分布到沉积室中，用于将衬底冷却至气体冷凝以形成聚合电介质材料的温度，以加热沉积室的壁以抑制在其上聚合的残余物的形成和积累，以及用于重新捕获离开沉积室的未反应的单体蒸气。还在沉积室的下游设置一个装置，以控制反应性单体在沉积室中的流速或停留时间以及控制沉积室的压力。进一步提供电偏压以允许该装置用作等离子体蚀刻室，用于沉积之间的腔室的原位等离子体清洁，用于增强可聚合前体材料的裂化，用于加热室的壁并提供热量足以防止气相中的聚合。

2. 发明授权

US5804259A Method and apparatus for depositing a multilayered low dielectric constant film 失效
标题翻译：沉积多层低介电常数膜的方法和装置
公开(公告)号：US5804259A
公开(公告)日：1998-09-08
申请号：US749290
申请日：1996-11-07
申请人： Stuardo Robles
发明人： Stuardo Robles
IPC分类号： H01L21/31 , B05D7/24 , C23C16/26 , C23C16/507 , C23C16/52 , H01L21/312 , H01L21/314 , H05H1/24 , B05D5/12 , H01L21/02 , C23C16/00
CPC分类号： B05D1/60 , C23C16/26 , C23C16/507 , C23C16/52 , H01L21/312 , H01L21/3127 , Y10S427/106
摘要： A method and apparatus for forming a multilayer insulating film on a substrate involves forming a number of carbon-based layers on the substrate, each interlaid with layers of organic material, such as parylene. Preferably, the carbon-based layers are formed using a high-density plasma chemical vapor deposition system, although other CVD systems may also be used. The result is a multilayer insulating film having a low overall dielectric constant, excellent gap-fill characteristics, and desirable thermal properties.
摘要翻译：用于在基板上形成多层绝缘膜的方法和装置包括在基板上形成多个碳基层，每个碳基层分别层合有机材料层，例如聚对二甲苯。优选地，使用高密度等离子体化学气相沉积系统形成碳基层，但也可以使用其它CVD系统。结果是具有低的总介电常数，优异的间隙填充特性和期望的热性能的多层绝缘膜。

3. 发明授权

US6035803A Method and apparatus for controlling the deposition of a fluorinated carbon film 失效
标题翻译：用于控制氟化碳膜沉积的方法和装置
公开(公告)号：US6035803A
公开(公告)日：2000-03-14
申请号：US939179
申请日：1997-09-29
申请人： Stuardo Robles , Wai-Fan Yau , Ping Xu , Kaushal Singh
发明人： Stuardo Robles , Wai-Fan Yau , Ping Xu , Kaushal Singh
IPC分类号： C01B31/02 , C23C16/26 , C23C16/505 , H01L21/312 , C23C16/00
CPC分类号： H01J37/32449 , C23C16/26 , C23C16/505 , H01L21/3127
摘要： A process for depositing a dielectric film having a reduced dielectric constant and desirable gap-fill characteristics, at an acceptable deposition rate is disclosed. A filmed deposited according to the present invention possesses acceptable stability, and avoids outgassing of the halogen dopant while resisting shrinkage.A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH.sub.4)) and a gaseous source of a halogen (such as a source of fluorine (e.g., C.sub.4 F.sub.8)). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer. The resulting carbon-based film has a low dielectric constant and good gap-fill. The film also exhibits minimal shrinkage during subsequent processing, and may then be annealed.
摘要翻译：公开了一种以可接受的沉积速率沉积具有降低的介电常数和期望的间隙填充特性的电介质膜的方法。根据本发明沉积的成膜具有可接受的稳定性，并且避免了卤素掺杂剂同时抵抗收缩。通过首先将处理气体流入处理室，将碳基电介质膜沉积在处理室中的衬底上。工艺气体包括碳的气体源（例如甲烷（CH 4））和卤素气体源（例如氟源（例如，C 4 F 8））。然后通过施加第一和第二RF功率分量从处理气体形成等离子体。优选地，第二RF分量具有在约200kHz和2MHz之间的频率以及约5W和75W之间的功率水平。第一和第二RF功率分量被施加一段时间以沉积卤素 - 掺杂碳基层。所得碳基膜具有低介电常数和良好的间隙填充。该膜在随后的加工过程中也显示出最小的收缩率，然后可以退火。

4. 发明授权

US06374770B1 Apparatus for improving film stability of halogen-doped silicon oxide films 失效
标题翻译：用于提高卤素掺杂氧化硅膜的膜稳定性的装置
公开(公告)号：US06374770B1
公开(公告)日：2002-04-23
申请号：US09597856
申请日：2000-06-20
申请人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
发明人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
IPC分类号： C23C1600
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31629
摘要： A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system. In one embodiment the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on a substrate positioned on the substrate holder and instructions that control the gas distribution system and plasma generation system to densify the halogen-doped silicon oxide film by bombarding the film with ionic species from a plasma of an argon-containing gas source. In another embodiment, the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on said substrate and instructions that control the gas distribution system and plasma generation system to form a plasma from a hydrogen containing source gas to bombard the halogen-doped silicon oxide film with hydrogen ions to remove loosely bound halogen atoms from the film.
摘要翻译：一种化学气相沉积系统，其包括构造成形成处理室的壳体，被配置为在处理室内保持衬底的衬底保持器，配置成将气体引入到处理室中的气体分配系统;等离子体生成系统，处理室内的等离子体，可操作地耦合以控制气体分配系统和等离子体生成系统的处理器以及耦合到处理器的计算机可读存储器，其存储引导化学气相沉积系统的操作的计算机可读程序。在一个实施例中，计算机可读程序包括控制气体分配系统以将包含硅，氧和卤素族成员的工艺气体流入室中的指令，以将沉积卤素掺杂的氧化硅膜沉积在位于衬底保持器以及控制气体分配系统和等离子体发生系统通过用来自含氩气体源的等离子体的离子物质轰击膜来致密化掺杂氧化硅膜的指令。在另一个实施例中，计算机可读程序包括控制气体分配系统以使包含硅，氧和卤素族成员的工艺气体流入腔室中以在所述衬底上沉积卤素掺杂的氧化硅膜的指令，以及控制气体分配系统和等离子体发生系统，以形成来自含氢源气体的等离子体，用氢离子轰击卤素掺杂的氧化硅膜，以从薄膜中去除松散结合的卤素原子。

5. 发明授权

US06277347B1 Use of ozone in process effluent abatement 失效
标题翻译：使用臭氧进行过程中的污水减排
公开(公告)号：US06277347B1
公开(公告)日：2001-08-21
申请号：US08805989
申请日：1997-02-24
申请人： Ranald Stearns , Gary Sypherd , Stuardo Robles , Maria Galiano
发明人： Ranald Stearns , Gary Sypherd , Stuardo Robles , Maria Galiano
IPC分类号： C01B700
CPC分类号： C23C16/4412 , B01D53/007 , B01D53/56 , B01D53/70 , B01D2251/104 , B01D2259/80 , Y02C20/30
摘要： A method and apparatus for abating a compound in a substrate processing system's effluent gases. The method of the present invention begins by introducing ozone and the effluent gases into an abatement device's combustion chamber. Energy is then applied to the effluent gas and ozone. The application of energy, such as thermal or radio frequency energy, then causes a reaction in and between the effluent gases and the ozone, thereby rendering the compound inert. The resultant gases produced are then exhausted out of the combustion chamber.
摘要翻译：一种减轻基板处理系统废气中的化合物的方法和装置。本发明的方法首先将臭氧和流出气体引入减排装置的燃烧室。然后将能量施加到废气和臭氧。诸如热或射频能量的能量的施加然后在流出气体和臭氧之间引起反应，从而使化合物变得惰性。所产生的所产生的气体然后被排出燃烧室。

6. 发明授权

US6009827A Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films 失效
标题翻译：用于在原位SACVD和PECVD氧化硅膜之间形成强界面的装置
公开(公告)号：US6009827A
公开(公告)日：2000-01-04
申请号：US740969
申请日：1996-11-05
申请人： Stuardo Robles , Visweswaren Sivaramakrishnan , Maria Galiano , Victoria Kithcart
发明人： Stuardo Robles , Visweswaren Sivaramakrishnan , Maria Galiano , Victoria Kithcart
IPC分类号： H01L21/31 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/316 , H05H1/00 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/402 , C23C16/45557 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen limits reactions with undesired reactants at the end of a process.
摘要翻译：一种用于在SACVD工艺中降低沉积压力的方法和装置。本发明还提供一种随后使PECVD工艺的压力升高的方法和装置，以防止可能形成弱层间界面的不希望的反应。特别地，SACVD工艺中的沉积压力通过停止含硅气体（优选TEOS）和/或载气（优选氦气）的流动，同时用氧气稀释臭氧流而降低。压力的下降开始于同一时间。用氧气稀释臭氧会在过程结束时限制与不需要的反应物的反应。

7. 发明授权

US5648175A Chemical vapor deposition reactor system and integrated circuit 失效
标题翻译：化学气相沉积反应器系统和集成电路
公开(公告)号：US5648175A
公开(公告)日：1997-07-15
申请号：US601558
申请日：1996-02-14
申请人： Kathleen Russell , Stuardo Robles , Bang C. Nguyen , Visweswaren Sivaramakrishnan
发明人： Kathleen Russell , Stuardo Robles , Bang C. Nguyen , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/31 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/316 , B32B9/00 , B05C11/00
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/509 , C23C16/54 , H01L21/02126 , H01L21/02129 , H01L21/02271 , H01L21/02274 , H01L21/31604 , H01L21/31625
摘要： A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.
摘要翻译：提供了一种将氧化硅层沉积到晶片或衬底上的方法和装置。本方法包括向处理室中引入包括硅，氧，硼，磷和锗的工艺气体，以形成具有小于800℃的回流温度的锗掺杂的BPSG氧化物层。本方法的优选实施方案在低压CVD或等离子体增强CVD处理装置。

8. 发明授权

US6121164A Method for forming low compressive stress fluorinated ozone/TEOS oxide film 失效
标题翻译：形成低压应力氟化臭氧/ TEOS氧化膜的方法
公开(公告)号：US6121164A
公开(公告)日：2000-09-19
申请号：US957058
申请日：1997-10-24
申请人： Ellie Yieh , Xin Zhang , Bang Nguyen , Stuardo Robles , Peter Lee
发明人： Ellie Yieh , Xin Zhang , Bang Nguyen , Stuardo Robles , Peter Lee
IPC分类号： C23C16/40 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02131 , C23C16/402 , H01L21/02274 , H01L21/02362 , H01L21/31629
摘要： A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5.times.10.sup.8 dynes/cm.sup.2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between about 60-650 torr. The relatively thin film, besides having a low dielectric constant and good gap fill capability, has low compressive stress, and is particularly suitable for use as an intermetal (IMD) layer.
摘要翻译：用于形成压电应力小于约-5×10 8达因/ cm 2的卤素掺杂氧化硅膜，优选氟化硅玻璃（FSG）膜的方法和装置。在一个具体的实施方案中，FSG膜通过在大约60-650托之间的压力下的低于大气压的CVD热处理形成。除了具有低介电常数和良好的间隙填充能力之外，相对薄的膜具有低的压缩应力，并且特别适合用作金属间（IMD）层。

9. 发明授权

US6103601A Method and apparatus for improving film stability of halogen-doped silicon oxide films 有权
标题翻译：用于提高卤素掺杂氧化硅膜的膜稳定性的方法和装置
公开(公告)号：US6103601A
公开(公告)日：2000-08-15
申请号：US330247
申请日：1999-06-10
申请人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
发明人： Peter W. Lee , Stuardo Robles , Anand Gupta , Virendra V. S. Rana , Amrita Verma
IPC分类号： H01L21/768 , C23C16/40 , C23C16/56 , H01L21/31 , H01L21/3105 , H01L21/316 , H01L23/522 , H01L21/425 , H01L21/469
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/56 , H01L21/02274 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31629
摘要： A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to make the layer resistant to moisture absorption and outgassing of fluorine atoms. In one embodiment, the post-treatment step includes forming a thin, undoped silicate glass layer on top of the FSG layer, and in another embodiment, the stability of the FSG film is increased by a post-treatment plasma step.
摘要翻译：描述了具有低介电常数的氟掺杂硅酸盐玻璃（FSG）层和形成这种绝缘层的方法。 FSG层通过后处理步骤进行处理，以使该层对氟原子的吸湿和除气有抵抗作用。在一个实施方案中，后处理步骤包括在FSG层的顶部上形成薄的未掺杂的硅酸盐玻璃层，在另一个实施方案中，通过后处理等离子体步骤来增加FSG膜的稳定性。

10. 发明授权

US5814377A Method and apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films 失效
标题翻译：用于在原位SACVD和PECVD氧化硅膜之间形成强界面的方法和装置
公开(公告)号：US5814377A
公开(公告)日：1998-09-29
申请号：US889703
申请日：1997-07-08
申请人： Stuardo Robles , Visweswaren Sivaramakrishnan , Maria Galiano , Victoria Kithcart
发明人： Stuardo Robles , Visweswaren Sivaramakrishnan , Maria Galiano , Victoria Kithcart
IPC分类号： H01L21/31 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/316 , H05H14/00 , B05D3/00 , H01L21/00
CPC分类号： C23C16/45561 , C23C16/402 , C23C16/45557 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen, limits reactions with undesired reactants at the end of a process.
摘要翻译：一种用于在SACVD工艺中降低沉积压力的方法和装置。本发明还提供一种随后使PECVD工艺的压力升高的方法和装置，以防止可能形成弱层间界面的不希望的反应。特别地，SACVD工艺中的沉积压力通过停止含硅气体（优选TEOS）和/或载气（优选氦气）的流动，同时用氧气稀释臭氧流而降低。压力的下降开始于同一时间。用氧气稀释臭氧，在过程结束时限制与不需要的反应物的反应。

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