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1. 发明授权

US06753258B1 Integration scheme for dual damascene structure 失效
标题翻译：双镶嵌结构的整合方案
公开(公告)号：US06753258B1
公开(公告)日：2004-06-22
申请号：US09706298
申请日：2000-11-03
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Margaret Gotuaco
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Margaret Gotuaco
IPC分类号： H01L21302
CPC分类号： H01L21/76801 , H01L21/31608 , H01L21/76807 , H01L21/76834 , H01L21/76885 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for processing a substrate to form a feature in low k dielectric materials. One aspect of the invention provides a method for processing a substrate including forming a feature definition in a dielectric material deposited on a surface of a substrate, depositing one or more conductive materials to fill at least a portion of the feature definition, planarizing the substrate surface to expose the dielectric material, removing at least a portion of the dielectric material, and depositing a low k dielectric material.
摘要翻译：一种用于处理基底以在低k电介质材料中形成特征的方法和装置。本发明的一个方面提供一种处理衬底的方法，包括在沉积在衬底的表面上的电介质材料中形成特征定义，沉积一种或多种导电材料以填充特征定义的至少一部分，平坦化衬底表面以暴露电介质材料，去除介电材料的至少一部分，以及沉积低k电介质材料。

2. 发明授权

US06750141B2 Silicon carbide cap layers for low dielectric constant silicon oxide layers 失效
标题翻译：用于低介电常数氧化硅层的碳化硅盖层
公开(公告)号：US06750141B2
公开(公告)日：2004-06-15
申请号：US10236800
申请日：2002-09-06
申请人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/02362 , H01L21/31633 , H01L21/76813 , H01L21/76828 , H01L21/76829
摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
摘要翻译：公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

3. 发明授权

US06531398B1 Method of depositing organosillicate layers 失效
标题翻译：沉积有机硅酸盐层的方法
公开(公告)号：US06531398B1
公开(公告)日：2003-03-11
申请号：US09702600
申请日：2000-10-30
申请人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Srinivas D. Nemani
发明人： Frederic Gaillard , Li-Qun Xia , Ellie Yieh , Paul Fisher , Srinivas D. Nemani
IPC分类号： H01L2100
CPC分类号： H01L21/76828 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/31612 , H01L21/76801 , H01L21/7681 , H01L21/76835
摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了形成有机硅酸盐层的方法。有机硅酸盐层通过向包含有机硅烷化合物和含氧气体的气体混合物施加电场而形成。有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，有机硅酸盐层用作金属间介电层。在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。

4. 发明授权

US06472333B2 Silicon carbide cap layers for low dielectric constant silicon oxide layers 失效
标题翻译：用于低介电常数氧化硅层的碳化硅盖层
公开(公告)号：US06472333B2
公开(公告)日：2002-10-29
申请号：US09820439
申请日：2001-03-28
申请人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/02362 , H01L21/31633 , H01L21/76813 , H01L21/76828 , H01L21/76829
摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
摘要翻译：公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

5. 发明申请

US20080132087A1 POST-DEPOSITION TREATMENT TO ENHANCE PROPERTIES OF SI-O-C LOW K FILMS 失效
标题翻译：后沉积处理以提高SI-O-C低K膜的性能
公开(公告)号：US20080132087A1
公开(公告)日：2008-06-05
申请号：US12013232
申请日：2008-01-11
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

6. 发明授权

US07074708B2 Method of decreasing the k value in sioc layer deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的沉积层中降低k值的方法
公开(公告)号：US07074708B2
公开(公告)日：2006-07-11
申请号：US10789209
申请日：2004-02-27
申请人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
发明人： Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
摘要翻译：一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积含有硅，氧和碳的电介质层，其中所述电介质层的碳含量至少为原子量的1％，介电常数小于约并且在电介质层上沉积含硅和碳的层。通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

7. 发明授权

US06602806B1 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film 失效
标题翻译：用于沉积低介电常数碳掺杂氧化硅膜的热CVD工艺
公开(公告)号：US06602806B1
公开(公告)日：2003-08-05
申请号：US09632668
申请日：2000-08-07
申请人： Li-Qun Xia , Fabrice Geiger , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Fabrice Geiger , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02129 , H01L21/02211 , H01L21/02271 , H01L21/02312 , H01L21/0234 , H01L21/02362 , H01L21/31633
摘要： A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.
摘要翻译：一种提供具有低介电常数的电介质膜的方法。沉积膜特别可用作集成电路中的金属间或前金属介电层。低介电常数膜是从与CVD等离子体相反的CVD法沉积的碳掺杂氧化硅层。该层由臭氧的工艺气体和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体沉积。在沉积过程中，将晶片加热到低于250℃的温度，优选加热到100-200℃之间的温度。对该方法的增强包括加入硼和/或磷掺杂剂，两步沉积和封盖柱固化层。

8. 发明授权

US06858923B2 Post-deposition treatment to enhance properties of Si-O-C low films 有权
标题翻译：后沉积处理以增强Si-O-C低电阻膜的性能
公开(公告)号：US06858923B2
公开(公告)日：2005-02-22
申请号：US10293096
申请日：2002-11-12
申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
发明人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
IPC分类号： C23C16/02 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/314 , H01L21/316 , H01L23/02
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/02071 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/3146 , H01L21/31604 , H01L21/31612 , H01L21/31633 , H01L21/76807 , H01L21/76826 , H01L21/76837 , Y10S438/931
摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
摘要翻译：一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。致密化通常在还原环境中进行，同时加热基底。致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

9. 发明授权

US06632478B2 Process for forming a low dielectric constant carbon-containing film 失效
标题翻译：用于形成低介电常数含碳膜的方法
公开(公告)号：US06632478B2
公开(公告)日：2003-10-14
申请号：US09791989
申请日：2001-02-22
申请人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
发明人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
IPC分类号： C23C1640
CPC分类号： B05D1/60 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31633
摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
摘要翻译：本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

10. 发明授权

US06583497B2 Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing 失效
标题翻译：表面处理c掺杂的SiO 2膜，以提高O2在灰化期间的稳定性
公开(公告)号：US06583497B2
公开(公告)日：2003-06-24
申请号：US10192274
申请日：2002-07-09
申请人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2358
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L21/31633
摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.
摘要翻译：一种在衬底上形成绝缘层的方法。该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。碳掺杂氧化硅层随后被固化和致密化。在一个实施方案中，固化膜在含氮等离子体中致密化。该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。和臭氧。上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

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