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61. 发明申请

US20060286904A1 Polishing System With In-Line and In-Situ Metrology 有权
标题翻译：具有在线和原位计量的抛光系统
公开(公告)号：US20060286904A1
公开(公告)日：2006-12-21
申请号：US11467116
申请日：2006-08-24
申请人： Boguslaw Swedek , Bret Adams , Sanjay Rajaram , David Chan , Manoocher Birang
发明人： Boguslaw Swedek , Bret Adams , Sanjay Rajaram , David Chan , Manoocher Birang
IPC分类号： B24B51/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译：一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底在抛光台处，当使用端点算法检测到端点标准时抛光停止。

62. 发明申请

US20060148261A1 Methods and apparatus for polishing control 有权
公开(公告)号：US20060148261A1
公开(公告)日：2006-07-06
申请号：US11370493
申请日：2006-03-06
申请人： Manoocher Birang , Konstantin Smekalin , David Chan
发明人： Manoocher Birang , Konstantin Smekalin , David Chan
IPC分类号： H01L21/461
CPC分类号： B24B37/013 , B24B37/042 , B24B49/003 , B24B49/12
摘要： A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

63. 发明申请

US20050287929A1 Integrated endpoint detection system with optical and eddy current monitoring 有权
标题翻译：具有光学和涡流监测的集成端点检测系统
公开(公告)号：US20050287929A1
公开(公告)日：2005-12-29
申请号：US11217598
申请日：2005-08-31
申请人： Boguslaw Swedek , Manoocher Birang , Nils Johansson
发明人： Boguslaw Swedek , Manoocher Birang , Nils Johansson
IPC分类号： B24B37/005 , B24B37/04 , B24B49/02 , B24B49/10 , B24B49/12 , G01B11/06 , H01L21/304 , B24B49/00
CPC分类号： B24B37/013 , B24B49/02 , B24B49/10 , B24B49/12 , G01B7/105 , G01B11/0683
摘要： A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.
摘要翻译：化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。来自监控系统的信号可以组合在输出线上并由计算机提取。可以计算抛光垫的厚度。涡流监测系统和光学监测系统可以测量基板上基本相同的位置。

64. 发明申请

US20050101224A1 Combined eddy current sensing and optical monitoring for chemical mechanical polishing 有权
公开(公告)号：US20050101224A1
公开(公告)日：2005-05-12
申请号：US11016410
申请日：2004-12-17
申请人： Nils Johansson , Boguslaw Swedek , Manoocher Birang
发明人： Nils Johansson , Boguslaw Swedek , Manoocher Birang
IPC分类号： B24B1/00 , B24B37/013 , B24B49/02 , B24B49/04 , B24B49/10 , B24B49/12 , B24B49/00
CPC分类号： B24B37/013 , B24B49/02 , B24B49/04 , B24B49/10 , B24B49/12 , G01B7/105
摘要： A chemical mechanical polishing apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween. An eddy current monitoring system is positioned to generate an alternating magnetic field in proximity to the substrate, an optical monitoring system generates a light beam and detects reflections of the light beam from the substrate, and a controller receives signals from the eddy current monitoring system and the optical monitoring system.

65. 发明授权

US06841057B2 Method and apparatus for substrate polishing 失效
标题翻译：用于基板抛光的方法和装置
公开(公告)号：US06841057B2
公开(公告)日：2005-01-11
申请号：US10098796
申请日：2002-03-13
申请人： Ralph Wadensweiler , Alain Duboust , Liang-Yuh Chen , Manoocher Birang , Ratson Morad , Paul D. Butterfield
发明人： Ralph Wadensweiler , Alain Duboust , Liang-Yuh Chen , Manoocher Birang , Ratson Morad , Paul D. Butterfield
IPC分类号： B23H5/08 , C25F7/00 , C25F3/00 , C25C7/04 , C25D17/00
CPC分类号： B23H5/08 , C25F7/00
摘要： A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a conductive polishing pad and an electrode having a membrane disposed therebetween. The membrane is orientated relative the conductive pad in a manner that facilitates removal of entrained gas from electrolyte flowing towards the conductive pad. The apparatus may be part of an electro-chemical polishing station that may optionally be part of a system that includes chemical mechanical polishing stations.
摘要翻译：提供了一种用于抛光衬底表面的方法和装置。一方面，用于抛光衬底的装置包括导电抛光垫和在其间设置有膜的电极。膜以相对于导电垫的方向定向，以便于从电解液中流出的夹带气体去除导电垫。该设备可以是电化学抛光站的一部分，其可以可选地是包括化学机械抛光站的系统的一部分。

66. 发明授权

US06832948B1 Thermal preconditioning fixed abrasive articles 失效
标题翻译：热预处理固定磨料制品
公开(公告)号：US06832948B1
公开(公告)日：2004-12-21
申请号：US09454354
申请日：1999-12-03
申请人： Manoocher Birang , Ramin Emami , Shijian Li , Fred C. Redeker
发明人： Manoocher Birang , Ramin Emami , Shijian Li , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/042 , B24B37/245
摘要： The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.
摘要翻译：固定磨料制品的CMP去除率增加，并且通过热预处理提高了晶片到晶片的均匀性。实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品，以增加和稳定Cu或Cu合金CMP去除速率。

67. 发明授权

US06776692B1 Closed-loop control of wafer polishing in a chemical mechanical polishing system 有权
标题翻译：在化学机械抛光系统中晶圆抛光的闭环控制
公开(公告)号：US06776692B1
公开(公告)日：2004-08-17
申请号：US09609426
申请日：2000-07-05
申请人： Steven Zuniga , Manoocher Birang
发明人： Steven Zuniga , Manoocher Birang
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , B24B49/16
摘要： Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.
摘要翻译：抛光晶片（10）的技术包括闭环控制。晶片可以由具有至少一个室的承载头（100）保持，其压力被控制以在晶片上施加向下的力。在抛光期间可以获得晶片的厚度相关测量，并且基于厚度相关测量计算晶片的厚度分布。将计算出的厚度分布与目标厚度分布进行比较。基于比较的结果调整至少一个载体头部腔室中的压力。可以调节承载头室压力以控制在抛光期间施加到晶片的向下的力的量和/或控制施加向下的力的晶片上的装载区域的尺寸。

68. 发明授权

US06676717B1 Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations 失效
公开(公告)号：US06676717B1
公开(公告)日：2004-01-13
申请号：US09672532
申请日：2000-09-28
申请人： Manoocher Birang , Allan Gleason
发明人： Manoocher Birang , Allan Gleason
IPC分类号： B24B100
CPC分类号： B24B37/205 , B24B37/013 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683 , Y10T428/15 , Y10T428/162 , Y10T428/163 , Y10T428/17 , Y10T428/218 , Y10T428/234 , Y10T428/24273 , Y10T428/24281 , Y10T428/24289 , Y10T428/24322 , Y10T428/24364 , Y10T428/24479 , Y10T428/249978 , Y10T428/31
摘要： An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

69. 发明授权

US06659849B1 Platen with debris control for chemical mechanical planarization 失效
标题翻译：压板具有用于化学机械平面化的碎屑控制
公开(公告)号：US06659849B1
公开(公告)日：2003-12-09
申请号：US09705965
申请日：2000-11-03
申请人： Shijian Li , Jayakumar Gurusamy , Manoocher Birang , Fred C. Redeker
发明人： Shijian Li , Jayakumar Gurusamy , Manoocher Birang , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B24B37/12 , B08B1/02 , B08B5/026 , B08B5/046 , B08B6/00 , B08B7/0028 , B24B21/10 , B24B21/14 , B24B53/017 , B24B53/10 , B24B57/02
摘要： Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.
摘要翻译：通常，用于清洁抛光材料的网的背面的方法和设备。在一个实施例中，该设备包括具有支撑表面的压板，该支撑表面适于支撑该纸幅的背面，以及布置在该压板上并且邻近该纸幅背面的纸幅清洁剂。还提供了一种用于清洁抛光材料的网的方法。在一个实施例中，该方法包括以下步骤：将平板上的抛光介质的一部分支撑在压板上，将幅材的一部分推进到压板上，以及清洁纸幅的展开部分。

70. 发明授权

US06659842B2 Method and apparatus for optical monitoring in chemical mechanical polishing 失效
公开(公告)号：US06659842B2
公开(公告)日：2003-12-09
申请号：US09929903
申请日：2001-08-14
申请人： Andreas Norbert Wiswesser , Judon Tony Pan , Buguslaw Swedek , Manoocher Birang
发明人： Andreas Norbert Wiswesser , Judon Tony Pan , Buguslaw Swedek , Manoocher Birang
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12 , G01B11/0683 , H01L21/3212
摘要： An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.

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