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    • 1. 发明授权
    • Closed-loop control of wafer polishing in a chemical mechanical polishing system
    • 在化学机械抛光系统中晶圆抛光的闭环控制
    • US06776692B1
    • 2004-08-17
    • US09609426
    • 2000-07-05
    • Steven ZunigaManoocher Birang
    • Steven ZunigaManoocher Birang
    • B24B100
    • B24B37/013B24B49/04B24B49/12B24B49/16
    • Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.
    • 抛光晶片(10)的技术包括闭环控制。 晶片可以由具有至少一个室的承载头(100)保持,其压力被控制以在晶片上施加向下的力。 在抛光期间可以获得晶片的厚度相关测量,并且基于厚度相关测量计算晶片的厚度分布。 将计算出的厚度分布与目标厚度分布进行比较。 基于比较的结果调整至少一个载体头部腔室中的压力。 可以调节承载头室压力以控制在抛光期间施加到晶片的向下的力的量和/或控制施加向下的力的晶片上的装载区域的尺寸。
    • 4. 发明授权
    • Closed-loop control of wafer polishing in a chemical mechanical polishing system
    • 在化学机械抛光系统中晶圆抛光的闭环控制
    • US07018275B2
    • 2006-03-28
    • US10886000
    • 2004-07-06
    • Steven ZunigaManoocher Birang
    • Steven ZunigaManoocher Birang
    • B24B11/00
    • B24B37/013B24B49/04B24B49/12B24B49/16
    • Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.
    • 抛光晶片(10)的技术包括闭环控制。 晶片可以由具有至少一个室的承载头(100)保持,其压力被控制以在晶片上施加向下的力。 在抛光期间可以获得晶片的厚度相关测量,并且基于厚度相关测量计算晶片的厚度分布。 将计算出的厚度分布与目标厚度分布进行比较。 基于比较的结果调整至少一个载体头部腔室中的压力。 可以调节承载头室压力以控制在抛光期间施加到晶片的向下的力的量和/或控制施加向下的力的晶片上的装载区域的尺寸。