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61. 发明授权

US09458538B2 Method and apparatus for sealing an opening of a processing chamber 有权
标题翻译：用于密封处理室的开口的方法和装置
公开(公告)号：US09458538B2
公开(公告)日：2016-10-04
申请号：US13349307
申请日：2012-01-12
申请人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
发明人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
IPC分类号： C23C16/455 , C23C16/54
CPC分类号： C23C16/54 , C23C16/45517
摘要： A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译：提供一种用于密封处理室的开口的方法和装置。在一个实施例中，本发明通常提供集成在处理室的壁内的封闭构件，用于密封腔室壁内的开口。在另一个实施例中，本发明提供了一种封闭构件，其构造成将处理室的壁中的开口与室的内部密封。

62. 发明授权

US09397380B2 Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
标题翻译：带等离子体室的非气体介质的导波器
公开(公告)号：US09397380B2
公开(公告)日：2016-07-19
申请号：US13360652
申请日：2012-01-27
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
IPC分类号： H01P3/16 , H01L21/02 , H05H1/46 , H01J37/32
CPC分类号： H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译：导波装置，其包括两个导电波导壁和波导电介质。波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

63. 发明授权

US09324597B2 Vertical inline CVD system 有权
标题翻译：垂直在线CVD系统
公开(公告)号：US09324597B2
公开(公告)日：2016-04-26
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

64. 发明授权

US09243328B2 Susceptor with roll-formed surface and method for making same 有权
标题翻译：具有辊形表面的受体和制造它的方法
公开(公告)号：US09243328B2
公开(公告)日：2016-01-26
申请号：US12407766
申请日：2009-03-19
申请人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
发明人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
IPC分类号： B01J19/08 , C23C16/458
CPC分类号： C23C16/4581
摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.
摘要翻译：本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

65. 发明授权

US08961756B2 Ganged scanning of multiple magnetrons, especially two level folded magnetrons 有权
标题翻译：组合扫描多个磁控管，特别是两个级别的磁控管
公开(公告)号：US08961756B2
公开(公告)日：2015-02-24
申请号：US11780757
申请日：2007-07-20
申请人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
发明人： Makoto Inagawa , Hien Minh Huu Le , Akihiro Hosokawa , Bradley O. Stimson , John M. White
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
摘要翻译：磁控管组件包括一个或多个磁控管，每个磁控管在靶的溅射面上形成封闭的等离子体环。目标可以包括多个条带目标，相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。带状磁控管可以是两级折叠磁控管，其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环，并且其端部在目标的中间相遇。形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案，其中在角附近提供额外的磁体位置以引导等离子体轨道。多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上，并且单独部分地由一个或多个靶的背面上的辊支撑。

66. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

67. 发明授权

US08733279B2 PECVD process chamber backing plate reinforcement 有权
标题翻译： PECVD处理室背板加强
公开(公告)号：US08733279B2
公开(公告)日：2014-05-27
申请号：US12037885
申请日：2008-02-26
申请人： John M. White , Shinichi Kurita , Robin L. Tiner
发明人： John M. White , Shinichi Kurita , Robin L. Tiner
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/32449 , C23C16/44 , C23C16/5096 , H01J37/3244 , H01J37/32495 , H01J37/32623 , H01J2237/3321 , H01J2237/3325
摘要： The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.
摘要翻译：本发明通常包括用于等离子体增强化学气相沉积设备中的背板加强装置。当处理大面积基板时，延伸穿过室的背板也可能相当大。通过用框架结构支撑背板的中心区域，背板可以保持基本上平面。或者，根据需要，可以调整背板的轮廓以适应该方法的特定需要。

68. 发明授权

US08641014B2 Gate valve 失效
标题翻译：闸阀
公开(公告)号：US08641014B2
公开(公告)日：2014-02-04
申请号：US13225871
申请日：2011-09-06
申请人： John M. White
发明人： John M. White
IPC分类号： F16K25/00
CPC分类号： F16K51/02 , F16K3/188
摘要： In one embodiment, a gate valve is provided that includes a seal plate disposed in a housing. An inflatable biasing member is retained on a first side of the seal plate and is positioned to surround a first opening formed through the housing. A ring seal is retained on a second side of the plate opposite the first side and is positioned to surround a second opening formed through the housing. At least one of the inflatable biasing member and the ring seal are adapted to create a vacuum seal around the first and second openings, respectively, when the inflatable biasing member is inflated.
摘要翻译：在一个实施例中，提供了一种闸阀，其包括设置在壳体中的密封板。可膨胀的偏置构件被保持在密封板的第一侧上并且被定位成围绕通过壳体形成的第一开口。环形密封件被保持在板的与第一侧相对的第二侧上并且被定位成围绕通过壳体形成的第二开口。当可膨胀的偏置构件被膨胀时，可膨胀的偏压构件和环形密封件中的至少一个适于分别围绕第一和第二开口产生真空密封。

69. 发明授权

US08404502B2 Water-barrier encapsulation method 有权
标题翻译：防水封装方法
公开(公告)号：US08404502B2
公开(公告)日：2013-03-26
申请号：US13117947
申请日：2011-05-27
申请人： Tae K. Won , Jose Manuel Dieguez Campo , John M. White , Sanjay Yadav
发明人： Tae K. Won , Jose Manuel Dieguez Campo , John M. White , Sanjay Yadav
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L21/6715 , H01L51/5256
摘要： The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or “encapsulate” the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure.
摘要翻译：本发明一般涉及有机发光二极管（OLED）结构及其制造方法。为了增加OLED结构的寿命，可以在OLED结构上沉积封装层。封装层可以完全包围或封装OLED结构。封装层可以具有与OLED结构和封装层之间的界面相对的基本平坦的表面。平面表面允许连续的层均匀地沉积在OLED结构上。封装层减少了OLED结构中的氧渗透，并且可能增加OLED结构的寿命。

70. 发明授权

US08251009B2 Shadow frame having alignment inserts 有权
标题翻译：阴影框架具有对准插入
公开(公告)号：US08251009B2
公开(公告)日：2012-08-28
申请号：US12465037
申请日：2009-05-13
申请人： Lan Duong , William N. Sterling , John M. White
发明人： Lan Duong , William N. Sterling , John M. White
IPC分类号： B05C13/00
CPC分类号： H01L21/68 , C23C16/4401 , Y10T29/49895
摘要： The present invention generally includes a shadow frame with alignment inserts that may permit the shadow frame to be properly aligned on the susceptor. The shadow frame may have one or more alignment inserts. The alignment inserts may be coupled to a cavity formed in the bottom surface of the shadow frame. The alignment inserts may be shaped to receive an alignment button that may be present on the susceptor. Thus, as the susceptor raises to the processing position and retrieves the shadow frame, the shadow frame may align properly on the susceptor.
摘要翻译：本发明通常包括具有对准插入物的阴影框架，其可以允许阴影框架在基座上适当对准。阴影框架可以具有一个或多个对准插入件。对准插入件可以联接到形成在阴影框架的底表面中的空腔。对准插入件可以被成形为接收可能存在于基座上的对准按钮。因此，当感受体升高到处理位置并检索阴影框时，阴影框架可以在基座上适当地对准。

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