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61. 发明申请

US20090278214A1 Microelectromechanical Systems Encapsulation Process 有权
标题翻译：微机电系统封装工艺
公开(公告)号：US20090278214A1
公开(公告)日：2009-11-12
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L29/84
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译：描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。涂层在器件释放后，但在封装层封口之前应用。或者，可以在封装之前将抗静电涂层直接施加到释放的装置。

62. 发明申请

US20080167601A1 Microneedles to be placed in the skin for the transdermal application of pharhmaceuticals 有权
标题翻译：将微针放置在皮肤中以透皮施用药物
公开(公告)号：US20080167601A1
公开(公告)日：2008-07-10
申请号：US11897299
申请日：2007-08-29
申请人： Franz Laermer , Michael Stumber , Dick Scholten , Christian Maeurer
发明人： Franz Laermer , Michael Stumber , Dick Scholten , Christian Maeurer
IPC分类号： A61B17/20 , B81C1/00
CPC分类号： A61B17/205 , A61B2090/037 , A61M37/0015 , A61M2037/003 , A61M2037/0046 , A61M2037/0053
摘要： An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.
摘要翻译：用于放置在人或动物患者的皮肤上的阵列，用于透皮施用具有位于载体基底上的微针的药物，毒素或活性剂的目的，微针在该区域中具有预设的断点过渡到载体基底。

63. 发明授权

US07321156B2 Device for capacitive pressure measurement and method for manufacturing a capacitive pressure measuring device 失效
标题翻译：电容式压力测量装置及制造电容式压力测量装置的方法
公开(公告)号：US07321156B2
公开(公告)日：2008-01-22
申请号：US10897449
申请日：2004-07-22
申请人： Frank Fischer , Hans-Peter Trah , Franz Laermer , Lars Metzger
发明人： Frank Fischer , Hans-Peter Trah , Franz Laermer , Lars Metzger
IPC分类号： H01L29/82
CPC分类号： G01L9/0073
摘要： A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.
摘要翻译：用于制造电容式压力测量的装置包括绝缘基极，由由单晶和多晶半导体材料中的至少一种构成的层，用于电连接电极的接触装置和至少一个半导体元件，全部集成到半导体衬底上。用于基极的连接由电绝缘的导电多晶半导体层形成。制造该器件的方法包括在用于形成基极的半导体衬底上的两个绝缘层之间布置导电多晶半导体层的步骤。

64. 发明授权

US07312553B2 Micromechanical component and method for producing same 有权
标题翻译：微机械部件及其制造方法
公开(公告)号：US07312553B2
公开(公告)日：2007-12-25
申请号：US10492896
申请日：2002-09-05
申请人： Franz Laermer
发明人： Franz Laermer
IPC分类号： H01L41/08
CPC分类号： G01C19/5712 , B81B3/0086 , B81B2201/0242 , B81B2203/0136 , B81B2203/033 , B81C1/00801 , B81C2201/0104 , B81C2201/016
摘要： A micromechanical component and a method for producing the component are provided. The micromechanical component includes a substrate and a micromechanical functional layer of a first material provided over the substrate. The functional layer has a first and second regions, which are connected by a third region of a second material, and at least one of the regions is part of a movable structure, which is suspended over the substrate.
摘要翻译：提供微机械部件及其制造方法。微机械部件包括衬底和设置在衬底上的第一材料的微机械功能层。功能层具有通过第二材料的第三区域连接的第一和第二区域，并且至少一个区域是悬浮在基板上的可移动结构的一部分。

65. 发明授权

US07285228B2 Device and method for anisotropic plasma etching of a substrate, a silicon body in particular 有权
标题翻译：特别是用于各向异性等离子体蚀刻衬底，硅体的装置和方法
公开(公告)号：US07285228B2
公开(公告)日：2007-10-23
申请号：US10506457
申请日：2003-03-05
申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
发明人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
IPC分类号： C23F1/00
CPC分类号： H01L21/67069
摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
摘要翻译：一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生同时又与之空间分离。排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

66. 发明授权

US07094706B2 Device and method for etching a substrate by using an inductively coupled plasma 有权
公开(公告)号：US07094706B2
公开(公告)日：2006-08-22
申请号：US10763010
申请日：2004-01-21
申请人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
发明人： Klaus Breitschwerdt , Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： H01L21/302
CPC分类号： H01J37/321 , H01J37/3266 , H01L21/3065
摘要： A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

67. 发明授权

US06911348B1 Device and method for determining the lateral undercut of a structured surface layer 失效
标题翻译：用于确定结构化表面层的横向底切的装置和方法
公开(公告)号：US06911348B1
公开(公告)日：2005-06-28
申请号：US09674984
申请日：2000-03-13
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： B81C99/00 , H01L21/02 , H01L21/66 , H01L21/00
CPC分类号： H01L28/10 , B81C99/004 , H01L22/12
摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.
摘要翻译：用于确定牺牲层上的结构化表面层的至少局部侧向底切的程度的装置和方法。用于此目的的结构化表面层在本地具有至少一个无源电子部件，利用该被动电子部件可以确定与外侧底切的程度成比例的物理测量量。用于产生该装置的方法首先在第一蚀刻方法中在结构化表面层上提出至少局部地提供具有沟槽的结构的表面层，并且以第二蚀刻方法从沟槽进行至少承受局部地是结构化表面层的横向底切。在本文中，在表面层上的第一蚀刻方法中，局部地附加地描绘了至少一个无源电子部件，其响应于表面层的随后的底切也被切削。物理测量的数量是在不接触的情况下确定的，优选地通过向无源部件发送电磁辐射。

68. 发明申请

US20050126710A1 Device and method for anisotropically plasma etching of a substrate, particularly a silicon body 有权
标题翻译：用于各向异性等离子体蚀刻衬底，特别是硅体的装置和方法
公开(公告)号：US20050126710A1
公开(公告)日：2005-06-16
申请号：US10506457
申请日：2003-03-05
申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
发明人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/67069
摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
摘要翻译：一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生同时又与之空间分离。排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

69. 发明授权

US06645800B2 Method for the production of a field-effect structure 失效
标题翻译：生产场效应结构的方法
公开(公告)号：US06645800B2
公开(公告)日：2003-11-11
申请号：US10016259
申请日：2001-10-26
申请人： Wilhelm Frey , Franz Laermer , Klaus Heyers
发明人： Wilhelm Frey , Franz Laermer , Klaus Heyers
IPC分类号： H01L218238
CPC分类号： G01P15/0802 , G01P15/124 , H01L21/3065
摘要： In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.
摘要翻译：在制造场效应结构和场效应结构的方法中，可动栅极结构布置在漏极和源极之间的衬底中的栅极区域的上方。栅极区域被栅极氧化物覆盖。可移动栅极结构由硅锗制成，并且在制造方法的中间步骤中，栅极氧化物上的锗牺牲层上布置有可动栅结构。

70. 发明授权

US06558559B1 Method of manufacturing micromechanical surface structures by vapor-phase etching 失效
标题翻译：通过气相蚀刻制造微机械表面结构的方法
公开(公告)号：US06558559B1
公开(公告)日：2003-05-06
申请号：US09019011
申请日：1998-02-05
申请人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： C23F100
CPC分类号： B81C1/00
摘要： A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.
摘要翻译：一种牺牲层蚀刻微机械表面结构的方法，其中牺牲层沉积在可加热的硅衬底上并被构造。蚀刻介质的衬底和气相之间的温度差异以这样的方式建立，使得由铝合金制成的暴露的金属触点不会同时受到冲击，并且不会随后暴露于任何腐蚀的风险。

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