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1. 发明授权

US07288485B2 Device and method for anisotropic plasma etching of a substrate, particularly a silicon element 有权
标题翻译：衬底，特别是硅元件的各向异性等离子体蚀刻的装置和方法
公开(公告)号：US07288485B2
公开(公告)日：2007-10-30
申请号：US10691108
申请日：2003-10-22
申请人： Klaus Breitschwerdt , Bernd Kutsch , Franz Laermer
发明人： Klaus Breitschwerdt , Bernd Kutsch , Franz Laermer
IPC分类号： H01L21/302
CPC分类号： H01L21/67069
摘要： A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species inside the chamber, the reactive species being created by the action of the alternating field upon an etching gas, and a passivating gas that is especially simultaneously introduced but spatially separated from it. Furthermore, an arrangement is provided, by the use of which, in the reaction region, at least a first zone that has etching gas applied to it, and at least a second zone that has passivating gas applied to it, are defined. In addition to this, the device has a mixing region downstream from the reaction region, using which, reactive species generated from the etching gas in the first zone and reactive species generated from the passivating gas in the second zone are intermixed with each other before acting upon the substrate.
摘要翻译：提供适用于其执行的方法和装置用于衬底，特别是硅元件的各向异性等离子体蚀刻。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于在室内产生具有反应性物质的等离子体的反应区域，反应性物质是由蚀刻气体上的交变场的作用产生的，以及特别同时引入但与其空间分离的钝化气体。此外，通过使用在反应区域中使用至少具有施加到其上的蚀刻气体的第一区域和至少施加有钝化气体的第二区域来进行布置。除此之外，该装置具有从反应区域下游的混合区域，利用该混合区域，从第一区域中的蚀刻气体产生的活性物质和由第二区域中的钝化气体产生的活性物质在作用之前相互混合在基板上。

2. 发明授权

US07285228B2 Device and method for anisotropic plasma etching of a substrate, a silicon body in particular 有权
标题翻译：特别是用于各向异性等离子体蚀刻衬底，硅体的装置和方法
公开(公告)号：US07285228B2
公开(公告)日：2007-10-23
申请号：US10506457
申请日：2003-03-05
申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
发明人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
IPC分类号： C23F1/00
CPC分类号： H01L21/67069
摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
摘要翻译：一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生同时又与之空间分离。排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

3. 发明申请

US20050126710A1 Device and method for anisotropically plasma etching of a substrate, particularly a silicon body 有权
标题翻译：用于各向异性等离子体蚀刻衬底，特别是硅体的装置和方法
公开(公告)号：US20050126710A1
公开(公告)日：2005-06-16
申请号：US10506457
申请日：2003-03-05
申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
发明人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/67069
摘要： A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
摘要翻译：一种用于实现用于各向异性等离子体蚀刻衬底（例如硅体）的方法的方法和装置。该装置具有用于产生高频电磁交变场的室和等离子体源，以及用于产生等离子体的反应区域，所述反应区域在室内产生，其通过蚀刻气体和钝化气体引入的交变场的作用而产生同时又与之空间分离。排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。该装置具有在反应区域下游的混合区域，其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

4. 发明授权

US06874511B2 Method of avoiding or eliminating deposits in the exhaust area of a vacuum system 失效
标题翻译：避免或消除真空系统排气区域沉积物的方法
公开(公告)号：US06874511B2
公开(公告)日：2005-04-05
申请号：US10202773
申请日：2002-07-24
申请人： Bernd Kutsch , Franz Laermer
发明人： Bernd Kutsch , Franz Laermer
IPC分类号： B08B7/00 , B08B17/00 , H01L21/3065 , H01L21/302
CPC分类号： H01J37/32844 , B08B7/00 , B08B17/00 , H01L21/3065 , Y02C20/30 , Y02P70/605
摘要： Method of avoiding or eliminating deposits in the exhaust area of a vacuum system in which a gas containing depositable constituents in the exhaust area is at least intermittently pumped out of a vacuum chamber that is connected to a vacuum pump via a gas line. A reactive gas that removes deposits from the gas in the vacuum pump and/or units provided downstream therefrom, and/or reduces or eliminates existing deposits in this area is at least intermittently added to the gas directly upstream from or within the vacuum pump. The proposed method is particularly suitable for anisotropic plasma etching of silicon using alternating etching steps and polymerization steps, the vacuum chamber being supplied with a sulfur-containing etching gas during the etching steps and a polymerizing agent-containing gas during the polymerization steps.
摘要翻译：在真空系统的排气区域中避免或消除沉积物的方法，其中含有排气区域中的可沉积成分的气体至少间歇地从通过气体管线连接到真空泵的真空室泵出。从真空泵和/或真空泵的上游直接上游的气体中至少间歇地加入反应性气体，该气体从真空泵和/或设置在其下游的单元中的气体中除去沉积物和/或减少或消除了该区域中的现有沉积物。所提出的方法特别适用于使用交替蚀刻步骤和聚合步骤的硅的各向异性等离子体蚀刻，在聚合步骤期间在蚀刻步骤期间在真空室中提供含硫蚀刻气体和含聚合剂的气体。

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