专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20150233015A1 METHOD OF GROWTH OF LEAD ZIRCONATE TITANATE SINGLE CRYSTALS 有权
标题翻译：铅锌酸铅单晶生长方法
公开(公告)号：US20150233015A1
公开(公告)日：2015-08-20
申请号：US14420896
申请日：2013-12-02
申请人： Quest Integrated, Inc.
发明人： Vincent Fratello
IPC分类号： C30B19/12 , H01L41/18 , C30B29/32 , C30B19/02 , C30B19/04
CPC分类号： C30B19/12 , C30B19/00 , C30B19/02 , C30B19/04 , C30B29/32 , H01L41/18 , H01L41/317 , H01L41/41
摘要： Growth of single crystals of lead zirconate titanate (PZT) and other perovskites is accomplished by liquid phase epitaxy onto a substrate of suitable structural and lattice parameter match. A solvent and specific growth conditions for stable growth are required to achieve the desired proportions of Zr and Ti.
摘要翻译：锆钛酸铅（PZT）和其他钙钛矿的单晶的生长通过液相外延在合适的结构和晶格参数匹配的衬底上实现。需要溶剂和用于稳定生长的特定生长条件来实现所需比例的Zr和Ti。

52. 发明申请

US20150167196A1 SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR 有权
标题翻译： SIC单晶及其生产方法
公开(公告)号：US20150167196A1
公开(公告)日：2015-06-18
申请号：US14415407
申请日：2013-05-08
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , NIPPON STEEL & SUMITOMO METAL CORPORATION
发明人： Motohisa Kado , Hironori Daikoku , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Nobuhiro Okada
IPC分类号： C30B19/10 , C30B29/36 , C30B19/06 , C30B19/04
CPC分类号： C30B19/10 , C30B9/06 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/068 , C30B29/36 , Y10T117/1008 , Y10T428/21 , Y10T428/24488
摘要： Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, the growth crystal having a recessed crystal growth surface and not including inclusions.
摘要翻译：提供：一种抑制夹杂物产生的高品质SiC单晶锭; 以及所述SiC单晶锭的制造方法。本发明涉及包括晶种基板和使用溶液法生长的SiC生长晶体并使用晶种基底作为其起点的SiC单晶锭，生长晶体具有凹陷晶体生长表面并且不包括夹杂物。

53. 发明申请

US20150013590A1 SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL 审中-公开
标题翻译：用于单晶生产装置的SEED CRYSTAL HOLDING SHAFT，以及用于生产单晶的方法
公开(公告)号：US20150013590A1
公开(公告)日：2015-01-15
申请号：US14373194
申请日：2012-12-27
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , NIPPON STEEL & SUMITOMO METAL CORPORATION
发明人： Motohisa Kado , Kazuhiko Kusunoki
IPC分类号： C30B19/06 , C30B29/36 , C30B19/04
CPC分类号： C30B19/062 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/04 , C30B19/068 , C30B29/36 , Y10T117/1024
摘要： The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft.
摘要翻译：本发明的目的是提供一种晶种保持轴，其用于通过溶解工艺制造单晶的装置，其允许SiC单晶比以前更快地生长，以及通过以下方法制备单晶的方法：解决过程。用于通过溶液法制造单晶的装置中的晶种保持轴是晶种保持轴，其中晶种保持轴的至少一部分侧面被具有比反射率更高的反射率的反射部件覆盖种子晶体保持轴和反射器构件设置成在反射构件和保持在晶种保持轴的端面上的晶种之间存在空间。

54. 发明申请

US20120211769A1 Sic single crystal wafer and process for production thereof 有权
标题翻译： Sic单晶晶片及其制造方法
公开(公告)号：US20120211769A1
公开(公告)日：2012-08-23
申请号：US13385566
申请日：2012-02-27
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Junichi Koike
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Junichi Koike
IPC分类号： H01L29/16 , B32B3/02 , C30B19/04 , H01L21/20 , C01B31/36 , B32B5/00 , B32B9/04 , B82Y30/00
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/062 , Y10T428/21 , Y10T428/265
摘要： A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.
摘要翻译：通过抑制从晶片产生的缺陷可以生长出其质量良好的外延膜的SiC单晶晶片具有厚度至多为50nm的受影响的表面层和氧含量至多为1.0×x的SiC单晶部分 1017原子/ cm3。该SiC单晶晶片由使用氧含量为100ppm以下的原料和氧浓度为100ppm以下的非氧化性气氛的溶液生长法得到的高纯度SiC体单晶制造。

55. 发明申请

US20110200833A1 METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：制造单晶碳化硅单晶的方法
公开(公告)号：US20110200833A1
公开(公告)日：2011-08-18
申请号：US13036101
申请日：2011-02-28
申请人： Kazuhito KAMEI , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Akihiro Yauchi , Shinji Shimosaki
发明人： Kazuhito KAMEI , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Akihiro Yauchi , Shinji Shimosaki
IPC分类号： C30B19/04 , C30B29/36
CPC分类号： C30B19/04 , C30B9/10 , C30B19/02 , C30B19/10 , C30B29/36
摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
摘要翻译：一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50

56. 发明申请

US20110198614A1 METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM 有权
标题翻译：用于制造SiC单晶膜的方法和装置
公开(公告)号：US20110198614A1
公开(公告)日：2011-08-18
申请号：US13033767
申请日：2011-02-24
申请人： Kazuhiko KUSUNOKI , Kazuhito Kamei , Nobuyoshi Yashiro , Ryo Hattori
发明人： Kazuhiko KUSUNOKI , Kazuhito Kamei , Nobuyoshi Yashiro , Ryo Hattori
IPC分类号： H01L29/161 , C30B19/04 , C30B19/06 , C30B19/12
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/10 , Y10T117/1024
摘要： A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10−3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
摘要翻译：一种SiC单晶膜的制造方法，其通过LPE法在熔体溶剂中使用SiC溶液，使具有低掺杂浓度的SiC外延膜在直径至少为2英寸的基板上稳定地生长，其包括抽真空在将熔体原料引入炉内之前，将晶体生长炉的内部加热抽真空直到晶体生长温度下的真空压力为5×10 -3 Pa以下的步骤。然后，将含有熔体原料的坩埚引入炉内，形成SiC溶液，在沉积在溶液中的基板上生长SiC外延膜。

57. 发明申请

US20090194017A1 METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：生产p型SiC半导体单晶的方法
公开(公告)号：US20090194017A1
公开(公告)日：2009-08-06
申请号：US12366076
申请日：2009-02-05
申请人： Yukio TERASHIMA , Yasuyuki Fujiwara
发明人： Yukio TERASHIMA , Yasuyuki Fujiwara
IPC分类号： C30B19/04
CPC分类号： C30B29/36 , C30B17/00 , C30B19/02
摘要： A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution.
摘要翻译：一种p型SiC半导体单晶的制造方法，其特征在于，使用将C溶解在Si熔体中的溶液和30〜70at。％Cr和0.1〜20at。％Al，基于Si熔体的总重量，Cr和Al添加到Si熔体中，以从溶液中在SiC单晶衬底上生长p型SiC半导体单晶。

58. 发明授权

US06929695B2 Method for preparing single crystal oxide thin film 失效
标题翻译：制备单晶氧化物薄膜的方法
公开(公告)号：US06929695B2
公开(公告)日：2005-08-16
申请号：US10363392
申请日：2001-08-31
申请人： Hideomi Koinuma , Masashi Kawasaki , Yuji Matsumoto
发明人： Hideomi Koinuma , Masashi Kawasaki , Yuji Matsumoto
IPC分类号： C30B29/22 , C30B19/04 , C30B23/02 , C30B25/02 , H01L39/24 , C30B25/12 , C30B25/14
CPC分类号： H01L39/2438 , C30B19/04 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/22 , C30B29/225
摘要： The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.
摘要翻译：本发明是一种用于制备单晶氧化物薄膜的三相外延法，包括以下步骤：在基片上沉积用作种子层的氧化物薄膜并具有与氧化物薄膜相同的组成为在种子层上沉积薄膜，该薄膜包括能够通过热从基底熔化和液化的物质，并将待沉积的氧化物溶解到种子层上，加热基底以形成液体层，并沉积通过使用气相外延法通过液体层在种子层上形成氧化物以形成单晶氧化物薄膜。在该方法中，在成膜步骤中将液体层上的氧分压设定在1.0至760托的范围内。

59. 发明授权

US5846319A Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth 失效
标题翻译：使用等温晶体生长形成HgCdTe红外检测层的方法和装置
公开(公告)号：US5846319A
公开(公告)日：1998-12-08
申请号：US614628
申请日：1996-03-13
申请人： Jeffrey Brian Barton
发明人： Jeffrey Brian Barton
IPC分类号： C30B19/04 , C30B19/06
CPC分类号： C30B19/06 , C30B19/04 , C30B29/48 , Y10S117/907
摘要： A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperature while causing Hg to vaporize and rise within the growth solution vessel. A water-cooling jacket causes the Hg to condense and form on the walls of the growth solution vessel. The Hg condensate is directed into a calibrated reservoir. HgCdTe growth continues as the Hg is depleted from the growth solution and fills the reservoir. The reservoir is calibrated to hold the specific amount of Hg condensate corresponding to the desired layer of HgCdTe. The reservoir overflows when full and directs the overflow into the growth solution, causing HgCdTe formation to cease. The volume of the reservoir may be altered to capture more or less Hg condensate, as desired, in order to change the amount of HgCdTe formed on the CdTe substrate.
摘要翻译：具有改善的材料均匀性和运行重复性的等温生长HgCdTe的系统和方法采用其中可以插入衬底的生长溶液容器。将生长溶液加热并保持在恒定温度，同时使Hg在生长溶液容器内蒸发并升高。水冷套管使Hg凝结并形成在生长溶液容器的壁上。 Hg冷凝物被引导到校准的储存器中。 HgCdTe生长继续，因为Hg从生长溶液中消耗并填充储层。储存器被校准以保持对应于所需的HgCdTe层的特定量的Hg冷凝物。储水池满时溢出并将溢流引导到生长溶液中，导致HgCdTe的形成停止。为了改变在CdTe基底上形成的HgCdTe的量，可根据需要改变储存器的体积以捕获更多或更少的Hg缩合物。

60. 发明授权

US5500390A Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique 失效
标题翻译：通过液相外延生长技术控制磷化镓单晶层中Si浓度的方法
公开(公告)号：US5500390A
公开(公告)日：1996-03-19
申请号：US457184
申请日：1995-06-01
申请人： Munehisa Yanagisawa , Yuki Tamura , Norihide Kokubu
发明人： Munehisa Yanagisawa , Yuki Tamura , Norihide Kokubu
IPC分类号： G01N21/64 , C30B19/04 , C30B19/10 , C30B29/44 , H01L21/208 , H01L33/30
CPC分类号： C30B19/04 , C30B29/44
摘要： A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations of the GaP single crystal layers in preceding runs; then determining the additional Si amounts to be added into the Ga solution to refresh the Si effective concentration therein in reference to the Si concentrations in the layers; and adding Si of the thus determined amount into the Ga solution to commence the subsequent run, wherein the Si concentration in each of the GaP liquid phase epitaxial growth layers is determined from measurement of the O/G ratio in the layer, which is computed from each pair of the both values of the photoluminescent spectral peak intensity around the wavelength of 6300 .ANG. (O component) as the numerator and the other photoluminescent spectral peak intensity around the wavelength of 5540 .ANG. (G component) as the denominator in the photoluminescence spectrum obtained by illuminating the GaP liquid phase epitaxial growth layer with a laser beam at room temperature, with the help of good correlation therebetween.
摘要翻译：一种用于控制在一系列GaP液相外延生长中生长的GaP单晶层中的Si浓度的方法，其重复使用一种相同的Ga溶液，其包括以下步骤：测量GaP的Si浓度上一次运行中的单晶层; 然后根据层中的Si浓度确定添加到Ga溶液中的额外Si量以刷新其中的Si有效浓度; 并将如此确定的量的Si添加到Ga溶液中以开始随后的运行，其中每个GaP液相外延生长层中的Si浓度通过从层中的O / G比的测量确定，其从作为分子的波长为6300附近（O分量）的光致发光光谱峰强度的两个值和作为光致发光光谱中的分母的5540 ANGSTROM（G成分）周围的其他光致发光光谱峰值强度的每一对通过在室温下用激光束照射GaP液相外延生长层，借助于它们之间的良好相关性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式