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1. 发明授权

US09222198B2 SiC single crystal wafer and process for production thereof 有权
标题翻译： SiC单晶晶片及其制造方法
公开(公告)号：US09222198B2
公开(公告)日：2015-12-29
申请号：US13385566
申请日：2012-02-27
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Junichi Koike
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Junichi Koike
IPC分类号： C30B19/02 , H01L21/02 , H01L21/16 , C30B29/36 , C30B19/04 , C30B19/06
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/062 , Y10T428/21 , Y10T428/265
摘要： A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.
摘要翻译：通过抑制从晶片产生的缺陷可以生长出其质量良好的外延膜的SiC单晶晶片具有厚度至多为50nm的受影响的表面层和氧含量至多为1.0×x的SiC单晶部分 1017原子/ cm3。该SiC单晶晶片由使用氧含量为100ppm以下的原料和氧浓度为100ppm以下的非氧化性气氛的溶液生长法得到的高纯度SiC体单晶制造。

2. 发明申请

US20150299900A1 METHOD FOR PRODUCING SIC SINGLE CRYSTAL 有权
标题翻译：生产SIC单晶的方法
公开(公告)号：US20150299900A1
公开(公告)日：2015-10-22
申请号：US14648027
申请日：2013-11-11
申请人： Hironori DAIKOKU , Hidemitsu SAKAMOTO , Motohisa KADO , Kazuhiko KUSUNOKI
发明人： Hironori DAIKOKU , Hidemitsu SAKAMOTO , Motohisa KADO , Kazuhiko KUSUNOKI
IPC分类号： C30B30/04 , C30B29/36 , C30B19/12 , C30B19/04 , C30B19/06
CPC分类号： C30B30/04 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/067 , C30B19/068 , C30B19/10 , C30B19/12 , C30B29/36
摘要： The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.
摘要翻译：本发明的目的是在生产操作中避免晶种的溶液接触位置的波动，生产出具有良好重现性的高品质SiC单晶。通过将由支撑棒支撑的SiC晶种与通过高频感应加热的溶液接触从而生长SiC单晶的SiC单晶的制造方法，其中支撑棒在施加时产生向溶液施加磁场，从而使SiC晶种与溶液接触，随后停止施加磁场以生长SiC单晶。

3. 发明授权

US08388752B2 Method of manufacturing a silicon carbide single crystal 有权
标题翻译：制造碳化硅单晶的方法
公开(公告)号：US08388752B2
公开(公告)日：2013-03-05
申请号：US13036101
申请日：2011-02-28
申请人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Akihiro Yauchi , Shinji Shimosaki
发明人： Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Akihiro Yauchi , Shinji Shimosaki
IPC分类号： C30B9/00
CPC分类号： C30B19/04 , C30B9/10 , C30B19/02 , C30B19/10 , C30B29/36
摘要： A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
摘要翻译：一种能够稳定地制造低载体密度至多为5×1017 / cm3，优选小于1×1017 / cm3的薄膜或本体晶体形式的SiC单晶的方法，其适用于使用其中溶剂是Si合金的熔体的SiC溶液的液相生长的各种装置采用具有由SixCryTiz表示的组成的Si合金，其中x，y和z（以原子百分比计）满足0.50

4. 发明授权

US09322112B2 Apparatus and method for production of SiC single crystal 有权
标题翻译： SiC单晶生产装置及方法
公开(公告)号：US09322112B2
公开(公告)日：2016-04-26
申请号：US13326638
申请日：2011-12-15
申请人： Tomokazu Ishii , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Kazuhito Kamei
发明人： Tomokazu Ishii , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Kazuhito Kamei
IPC分类号： C30B15/20 , C30B29/36 , C30B17/00
CPC分类号： C30B29/36 , C30B17/00 , Y10T117/1068 , Y10T117/1088
摘要： To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.
摘要翻译：为了抑制3D或凸起生长并确保高平坦度，用于制造SiC单晶的装置包括：容纳SiC溶液的容器，用于将容器中的溶液保持在合适温度的部分，具有下端的轴作为用于保持SiC晶种与晶体生长面的整个后表面平面接触并用作冷却SiC晶种的部分的部分的部分，以及用于使SiC单晶能够通过保持晶体生长面与溶液接触而在晶体生长面上连续生长，轴的下端部具有用于获得平面接触的晶体生长面的均匀的面内温度分布的部分，以及一种方法。

5. 发明申请

US20140245945A1 SIC SINGLE CRYSTAL MANUFACTURING METHOD 有权
标题翻译： SIC单晶制造方法
公开(公告)号：US20140245945A1
公开(公告)日：2014-09-04
申请号：US14350448
申请日：2011-12-09
申请人： Motohisa Kado , Hironori Daikoku , Kazuhiko Kusunoki
发明人： Motohisa Kado , Hironori Daikoku , Kazuhiko Kusunoki
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/02 , C30B19/04 , C30B29/36
摘要： Provided is a SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In this SiC single crystal manufacturing method, a SiC single crystal is grown in a crucible from a Si solution containing C. The SiC single crystal manufacturing method is characterized in alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, said supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.
摘要翻译：提供了一种SiC单晶制造方法，其中通过使用溶液法生长SiC单晶时，可以保持能够持续均匀的单晶生长的平坦生长，从而可以实现高生产率所需的生长速度提高。在这种SiC单晶制造方法中，SiC单晶从含有C的Si溶液在坩埚中生长。SiC单晶制造方法的特征在于，交替重复：高过饱和度生长期，其中通过保持Si溶液中C的过饱和度高于可维持平坦生长的上限临界值，所述过饱和度处于生长Si溶液和SiC单晶之间的界面增长; 以及低过饱和度生长期，其中通过保持过饱和度低于临界值来促进生长。

6. 发明申请

US20120160153A1 APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶生产设备及方法
公开(公告)号：US20120160153A1
公开(公告)日：2012-06-28
申请号：US13326638
申请日：2011-12-15
申请人： Tomokazu ISHII , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Kazuhito Kamei
发明人： Tomokazu ISHII , Hidemitsu Sakamoto , Kazuhiko Kusunoki , Kazuhito Kamei
IPC分类号： C30B15/20
CPC分类号： C30B29/36 , C30B17/00 , Y10T117/1068 , Y10T117/1088
摘要： To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.
摘要翻译：为了抑制3D或凸起生长并确保高平坦度，用于制造SiC单晶的装置包括：容纳SiC溶液的容器，用于将容器中的溶液保持在合适温度的部分，具有下端的轴作为用于保持SiC晶种与晶体生长面的整个后表面平面接触并用作冷却SiC晶种的部分的部分的部分，以及用于使SiC单晶能够通过保持晶体生长面与溶液接触而在晶体生长面上连续生长，轴的下端部具有用于获得平面接触的晶体生长面的均匀的面内温度分布的部分，以及一种方法。

7. 发明授权

US09732441B2 Production apparatus and production method of SiC single crystal 有权
公开(公告)号：US09732441B2
公开(公告)日：2017-08-15
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B9/00 , C30B35/00 , C30B9/10 , C30B29/36 , C30B15/32 , C30B17/00 , C30B11/00 , C30B19/06 , C30B19/08
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

8. 发明授权

US09708734B2 Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution 有权
公开(公告)号：US09708734B2
公开(公告)日：2017-07-18
申请号：US14648027
申请日：2013-11-11
申请人： Hironori Daikoku , Hidemitsu Sakamoto , Motohisa Kado , Kazuhiko Kusunoki
发明人： Hironori Daikoku , Hidemitsu Sakamoto , Motohisa Kado , Kazuhiko Kusunoki
IPC分类号： C30B19/10 , C30B30/04 , C30B29/36 , C30B17/00 , C30B19/04 , C30B19/06 , C30B19/12
CPC分类号： C30B30/04 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/067 , C30B19/068 , C30B19/10 , C30B19/12 , C30B29/36
摘要： The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.

9. 发明授权

US09624599B2 SiC single crystal manufacturing method using alternating states of supersaturation 有权
公开(公告)号：US09624599B2
公开(公告)日：2017-04-18
申请号：US14350448
申请日：2011-12-09
申请人： Motohisa Kado , Hironori Daikoku , Kazuhiko Kusunoki
发明人： Motohisa Kado , Hironori Daikoku , Kazuhiko Kusunoki
IPC分类号： C30B15/22 , C30B19/04 , C30B29/36 , C30B15/02
CPC分类号： C30B15/22 , C30B15/02 , C30B19/04 , C30B29/36
摘要： A SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In the method, a SiC single crystal is grown in a crucible from a Si solution containing C. The method includes alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, the supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.

10. 发明授权

US09617655B2 Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal 有权
公开(公告)号：US09617655B2
公开(公告)日：2017-04-11
申请号：US13997722
申请日：2011-12-26
申请人： Nobuhiro Okada , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Kouji Moriguchi , Hironori Daikoku , Hiroshi Suzuki , Tomokazu Ishii , Hidemitsu Sakamoto , Motohisa Kado , Yoichiro Kawai
发明人： Nobuhiro Okada , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Kouji Moriguchi , Hironori Daikoku , Hiroshi Suzuki , Tomokazu Ishii , Hidemitsu Sakamoto , Motohisa Kado , Yoichiro Kawai
IPC分类号： C30B15/20 , C30B29/36 , C30B15/14 , C30B17/00 , C30B15/30
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1.5 (1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2 (2) D2=503292×(1/(f×σs×μs))1/2 (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.

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