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1. 发明授权

US06465344B1 Crystal thinning method for improved yield and reliability 有权
标题翻译：水晶稀化法提高产量和可靠性
公开(公告)号：US06465344B1
公开(公告)日：2002-10-15
申请号：US09802448
申请日：2001-03-09
申请人： Jeffrey Brian Barton
发明人： Jeffrey Brian Barton
IPC分类号： H01L214763
CPC分类号： H01L21/78
摘要： Methods for forming die that have minimal edge and surface damage are provided. Die formed by these methods are less susceptible to cracking and breakage. Thus, yield and performance of devices fabricated with die formed by these methods are advantageously improved. To form the die, trenches are formed in a wafer around the peripheral edge of the die by processes that cause only minimal damage to the edges of the die. The wafer is cut through the trenches into sections containing the die without contacting the edge of the die. The sections are then mounted onto a holder and thinned to produce the die.
摘要翻译：提供了具有最小边缘和表面损伤的成型模具的方法。由这些方法形成的模具不易破裂和断裂。因此，有利地提高了通过这些方法形成的模具制造的器件的产量和性能。为了形成管芯，通过仅对管芯的边缘造成最小损伤的工艺，在晶片周围的晶片周围形成沟槽。将晶片通过沟槽切割成包含模具的部分而不与模具的边缘接触。然后将这些部分安装在支架上并变薄以制造模具。

2. 发明授权

US5846319A Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth 失效
标题翻译：使用等温晶体生长形成HgCdTe红外检测层的方法和装置
公开(公告)号：US5846319A
公开(公告)日：1998-12-08
申请号：US614628
申请日：1996-03-13
申请人： Jeffrey Brian Barton
发明人： Jeffrey Brian Barton
IPC分类号： C30B19/04 , C30B19/06
CPC分类号： C30B19/06 , C30B19/04 , C30B29/48 , Y10S117/907
摘要： A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperature while causing Hg to vaporize and rise within the growth solution vessel. A water-cooling jacket causes the Hg to condense and form on the walls of the growth solution vessel. The Hg condensate is directed into a calibrated reservoir. HgCdTe growth continues as the Hg is depleted from the growth solution and fills the reservoir. The reservoir is calibrated to hold the specific amount of Hg condensate corresponding to the desired layer of HgCdTe. The reservoir overflows when full and directs the overflow into the growth solution, causing HgCdTe formation to cease. The volume of the reservoir may be altered to capture more or less Hg condensate, as desired, in order to change the amount of HgCdTe formed on the CdTe substrate.
摘要翻译：具有改善的材料均匀性和运行重复性的等温生长HgCdTe的系统和方法采用其中可以插入衬底的生长溶液容器。将生长溶液加热并保持在恒定温度，同时使Hg在生长溶液容器内蒸发并升高。水冷套管使Hg凝结并形成在生长溶液容器的壁上。 Hg冷凝物被引导到校准的储存器中。 HgCdTe生长继续，因为Hg从生长溶液中消耗并填充储层。储存器被校准以保持对应于所需的HgCdTe层的特定量的Hg冷凝物。储水池满时溢出并将溢流引导到生长溶液中，导致HgCdTe的形成停止。为了改变在CdTe基底上形成的HgCdTe的量，可根据需要改变储存器的体积以捕获更多或更少的Hg缩合物。

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