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51. 发明授权

US5283087A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5283087A
公开(公告)日：1994-02-01
申请号：US863543
申请日：1992-04-06
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34 , B05D3/06 , C23C16/00 , C25F3/00
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
摘要翻译：对等离子体处理及其装置进行说明。多个基板设置在一对电极之间，施加高频电力以产生辉光放电并诱导等离子体。等离子体中的衬底被施加交变电场。由于交变电场，基板受到溅射作用。

52. 发明授权

US5256483A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5256483A
公开(公告)日：1993-10-26
申请号：US606185
申请日：1990-10-31
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34 , B32B9/00
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321 , Y10S428/906 , Y10T428/30
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
摘要翻译：对等离子体处理及其装置进行说明。多个基板设置在一对电极之间，施加高频电力以产生辉光放电并诱导等离子体。等离子体中的衬底被施加交变电场。由于交变电场，基板受到溅射作用。

53. 发明授权

US5182132A Magnetic recording medium and method for making it 失效
标题翻译：磁记录介质及其制作方法
公开(公告)号：US5182132A
公开(公告)日：1993-01-26
申请号：US621464
申请日：1990-12-03
申请人： Mikio Murai , Kiyoshi Takahashi , Masaru Odagiri , Yoshiaki Kai , Takashi Suzuki , Toshiaki Kunieda
发明人： Mikio Murai , Kiyoshi Takahashi , Masaru Odagiri , Yoshiaki Kai , Takashi Suzuki , Toshiaki Kunieda
IPC分类号： C23C16/26 , C23C16/509 , C23C16/517 , G11B5/64 , G11B5/72 , G11B5/725 , G11B5/84
CPC分类号： C23C16/517 , C23C16/26 , C23C16/509 , G11B5/72 , G11B5/725 , Y10S427/106 , Y10S428/90 , Y10T428/24372 , Y10T428/30 , Y10T428/31678
摘要： In making a magnetic recording medium, a diamond-like carbon film is formed stably with high product efficiency such as 200 .ANG./sec, without occurrence of irregular discharge, and improved still durability and reduced head contamination are achieved by utilizing a.c. plasma discharge or a.c. plasma discharge superimposed by d.c. power and the lubricant film.

54. 发明授权

US5082685A Method of conducting plasma treatment 失效
标题翻译：导电等离子体处理方法
公开(公告)号：US5082685A
公开(公告)日：1992-01-21
申请号：US554460
申请日：1990-07-19
申请人： Hisao Morooka
发明人： Hisao Morooka
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/517
摘要： A treatment, typically plasma treatment apparatus comprises a plasma creating chamber adapted to create a plasma therein, a treating chamber in communication with the plasma creating chamber through an electrode for drawing electron beams from the plasma, an input conduit coupled to the treating chamber for introducing a reaction gas therein, and directive means associated with the input conduit for imparting directivity to the reaction gas. With the apparatus, plasma treatment, typically plasma CVD or plasma etching is carried out on an article in the chamber by forming a high density region of the reaction gas substantially perpendicular to the electron beams in the chamber.
摘要翻译：处理，通常是等离子体处理装置，包括适于在其中产生等离子体的等离子体产生室，通过用于从等离子体吸收电子束的电极与等离子体产生室连通的处理室，连接到处理室的输入导管，用于引入反应气体，以及与输入管道相关联的指示装置，用于赋予反应气体指向性。利用该装置，通过形成基本上垂直于腔室中的电子束的反应气体的高密度区域，在腔室中的物品上进行等离子体处理，通常为等离子体CVD或等离子体蚀刻。

55. 发明授权

US5079031A Apparatus and method for forming thin films 失效
标题翻译：用于形成薄膜的装置和方法
公开(公告)号：US5079031A
公开(公告)日：1992-01-07
申请号：US324669
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/517 , H01J37/32082 , H01J37/32568 , H01J2237/3321
摘要： An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.

56. 发明授权

US5007374A Apparatus for forming thin films in quantity 失效
标题翻译：用于形成薄膜的装置
公开(公告)号：US5007374A
公开(公告)日：1991-04-16
申请号：US324668
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Mitsunori Tsuchiya , Kenji Itoh , Takashi Inushima , Atsushi Kawano
发明人： Shunpei Yamazaki , Shinji Imatou , Mitsunori Tsuchiya , Kenji Itoh , Takashi Inushima , Atsushi Kawano
IPC分类号： H01L21/205 , C23C16/26 , C23C16/517 , H01L21/31
CPC分类号： C23C16/517 , C23C16/26
摘要： An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.
摘要翻译：适用于大规模生产硬度高的碳涂层的设备。该装置使用两种类型的能量输入。将第一能量输入到设置在反应室中的一对电极，在该电极之间限定了沉积空间。待涂覆的多个基板安装在被提供有第二电能的多个基板保持器上。保持器平行于电场布置以防止电场的干扰。

57. 发明授权

US4971667A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US4971667A
公开(公告)日：1990-11-20
申请号：US303240
申请日：1989-02-03
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Atsushi Kawano , Shinji Imatou , Kazuhisa Nakashita , Toshiji Hamatani , Takashi Inushima , Kenji Itou
IPC分类号： C23C16/517 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32082 , C23C16/517 , H01J37/32165 , H01J37/32568 , H01J37/34 , H01J2237/3321
摘要： A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

58. 发明授权

US4842686A Wafer processing apparatus and method 失效
标题翻译：晶圆加工设备及方法
公开(公告)号：US4842686A
公开(公告)日：1989-06-27
申请号：US75016
申请日：1987-07-17
申请人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
发明人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
IPC分类号： H01L21/302 , C23C16/48 , C23C16/517 , C23C16/54 , G03F7/20 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/677
CPC分类号： G03F7/70808 , C23C16/482 , C23C16/517 , C23C16/54 , G03F7/70866
摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

59. 发明授权

US4829215A Discharge reaction apparatus utilizing dynamic magnetic field 失效
标题翻译：利用动态磁场的放电反应装置
公开(公告)号：US4829215A
公开(公告)日：1989-05-09
申请号：US110622
申请日：1987-10-20
申请人： Kyungshik Kim , Owen Wilkinson
发明人： Kyungshik Kim , Owen Wilkinson
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/32623 , C23C16/517 , H01J37/3266
摘要： A discharge reaction apparatus utilizing dynamic magnetic field for subjecting the surface of an object to a depositing or an etching process is disclosed. The apparatus comprises a member for generating dynamic magnetic field along the surface of an electrode and a member for limiting or forbidding the circulating motion of electron around the electrode.
摘要翻译：公开了一种利用动态磁场对物体的表面进行沉积或蚀刻工艺的放电反应装置。该装置包括用于沿着电极的表面产生动态磁场的部件和用于限制或禁止围绕电极的电子循环运动的部件。

60. 发明授权

US4795529A Plasma treating method and apparatus therefor 失效
标题翻译：等离子体处理方法及其设备
公开(公告)号：US4795529A
公开(公告)日：1989-01-03
申请号：US109318
申请日：1987-10-19
申请人： Yoshinao Kawasaki , Hironobu Kawahara , Yutaka Kakehi , Kado Hirobe , Katsuyoshi Kudo
发明人： Yoshinao Kawasaki , Hironobu Kawahara , Yutaka Kakehi , Kado Hirobe , Katsuyoshi Kudo
IPC分类号： H05H1/02 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/306 , B05D3/06 , B44C1/22 , C23C14/00
CPC分类号： H01J37/32706 , C23C16/517 , H01L21/30655 , H01J2237/3348
摘要： This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.
摘要翻译：本发明涉及等离子体处理方法及其装置。等离子体处理方法包括在减压下制备具有临界电位等离子体的气体，并且改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压。等离子体处理装置包括用于在减压下形成具有临界电位等离子体的气体的装置，以及用于改变用于将等离子体中的离子加速到插入临界电位的样品的加速电压的装置。根据本发明，蚀刻步骤和成膜步骤可以交替进行，并且可以缩短等离子体处理时间。

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