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51. 发明授权

US07957444B2 Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus 有权
标题翻译：表面发射激光二极管，表面发射激光二极管阵列，光学扫描装置和成像装置
公开(公告)号：US07957444B2
公开(公告)日：2011-06-07
申请号：US12090934
申请日：2007-08-13
申请人： Akihiro Itoh , Shunichi Sato
发明人： Akihiro Itoh , Shunichi Sato
IPC分类号： H01S5/00
CPC分类号： H01S5/18322 , B82Y20/00 , H01S5/18311 , H01S5/18338 , H01S5/18355 , H01S5/3202 , H01S5/34313 , H01S5/423 , H01S2304/00 , H04N1/1135 , H04N1/1912 , H04N1/1917
摘要： A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from a center of the mesa structure in a plane perpendicular to a laser oscillation direction.
摘要翻译：垂直腔表面发射激光器结构的表面发射激光二极管包括形成在衬底上的衬底和台面结构，其中包括电流限制结构的台面结构，其中电流限制结构包括导电电流限制区域和围绕所述导电电流限制区域的绝缘区域，所述绝缘区域是形成所述导电电流限制区域的半导体材料的氧化物，并且其中所述电流限制区域的中心在垂直于所述导电限流区域的平面中偏离所述台面结构的中心激光振荡方向。

52. 发明授权

US07924659B2 Optically assisted magnetic recording device with semiconductor laser, optically assisted magnetic recording head and magnetic disk device 失效
公开(公告)号：US07924659B2
公开(公告)日：2011-04-12
申请号：US12318240
申请日：2008-12-23
申请人： Kiichi Ueyanagi
发明人： Kiichi Ueyanagi
IPC分类号： G11B11/00
CPC分类号： G11B11/1058 , G11B11/10534 , G11B11/10545 , G11B11/10554 , H01S5/005 , H01S5/0261 , H01S5/18338 , H01S5/18394 , H01S2301/176
摘要： The present invention provides a magnetooptic device, a magnetooptic head, and a magnetic disk drive each capable of performing optically assisted magnetic recording and each having a small size, improved recording density, and a higher transfer rate. In a magnetooptic device, a magnetic circuit including a magnetic gap and a thin film magnetic transducer having a coil portion are stacked on the surface of a semiconductor laser. By the arrangement, optically assisted magnetic recording can be performed, small size and light weight are achieved, and higher transfer rate can be implemented.

53. 发明授权

US07526008B2 Surface emitting laser diode 失效
标题翻译：表面发射激光二极管
公开(公告)号：US07526008B2
公开(公告)日：2009-04-28
申请号：US11746160
申请日：2007-05-09
申请人： Masaki Shiozaki
发明人： Masaki Shiozaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , H01S5/18338 , H01S5/1835 , H01S5/3201
摘要： A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.
摘要翻译：可以容易且廉价地制造能够将激光束的偏振方向控制在固定方向的表面发射半导体激光器件。对电流限制层进行氧化处理，形成具有面内各向异性的矩形的电流通路区域。此外，设置成平行于电流通道区域的对角方向中的任一方的其侧表面侧面的一对沟槽的光束出射孔设置在作为其中心的光束出射孔的相对位置处。使通过光束射出孔径出射的激光束的偏振方向仅被指定为一个方向，从而可以精确地将偏振方向控制到固定方向。此外，在沟槽或沟槽充满相对于激光束吸收的金属材料或绝缘材料的情况下，激光束的偏振比进一步提高。

54. 发明授权

US07486713B2 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US07486713B2
公开(公告)日：2009-02-03
申请号：US10934450
申请日：2004-09-07
申请人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
发明人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18313 , H01S5/18316 , H01S5/18333 , H01S5/18338 , H01S5/18341 , H01S5/18347 , H01S5/18355 , H01S5/3432 , H01S2301/18
摘要： A surface-emitting type semiconductor laser includes a substrate; a first mirror disposed above the substrate; an active layer disposed above the first mirror; a second mirror disposed above the active layer; a first columnar section including the active layer, the first columnar section not having anisotropy; a first dielectric layer disposed in the first columnar section, the first dielectric layer including a symmetric opening section; a second columnar section disposed above the first columnar section, the second columnar section having an outer wall that has anisotropy; and a second dielectric layer disposed in the second columnar section, the second dielectric layer including an asymmetric opening section.
摘要翻译：表面发射型半导体激光器包括基板; 设置在所述基板上方的第一反射镜; 设置在第一反射镜上方的有源层; 位于有源层上方的第二反射镜; 第一柱状部分，包括有源层，第一柱状部分不具有各向异性; 设置在所述第一柱状部分中的第一介电层，所述第一介电层包括对称的开口部分; 设置在第一柱状部分上方的第二柱状部分，第二柱状部分具有具有各向异性的外壁; 以及设置在所述第二柱状部分中的第二电介质层，所述第二电介质层包括不对称开口部分。

55. 发明授权

US07443899B2 Surface emitting semiconductor laser diode and manufacturing method thereof 失效
标题翻译：表面发射半导体激光二极管及其制造方法
公开(公告)号：US07443899B2
公开(公告)日：2008-10-28
申请号：US10986038
申请日：2004-11-12
申请人： Nobuaki Ueki
发明人： Nobuaki Ueki
IPC分类号： H01S5/00
CPC分类号： H01S5/18377 , H01S5/18311 , H01S5/18338 , H01S5/1835 , H01S5/18369 , H01S5/18394
摘要： A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.
摘要翻译：表面发射半导体激光二极管包括衬底，形成在衬底上的第一反射层，形成在第一反射层上的有源层，形成在有源层上的第二反射层，在其中形成有开口的第一导电层，第二反射层，以及形成在第二反射层上以覆盖开口的附加反射层，其中附加反射层至少在其一部分处被第二导电层覆盖。

56. 发明申请

US20070248125A1 SURFACE EMITTING LASER DIODE 失效
标题翻译：表面发射激光二极管
公开(公告)号：US20070248125A1
公开(公告)日：2007-10-25
申请号：US11746160
申请日：2007-05-09
申请人： Masaki Shiozaki
发明人： Masaki Shiozaki
IPC分类号： H01S3/10
CPC分类号： H01S5/18355 , H01S5/18338 , H01S5/1835 , H01S5/3201
摘要： A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.
摘要翻译：可以容易且廉价地制造能够将激光束的偏振方向控制在固定方向的表面发射半导体激光器件。对电流限制层进行氧化处理，形成具有面内各向异性的矩形的电流通路区域。此外，设置成平行于电流通道区域的对角方向中的任一方的其侧表面侧面的一对沟槽的光束出射孔设置在与出射孔作为中心的相对位置处。使通过光束射出孔径出射的激光束的偏振方向仅被指定为一个方向，从而可以精确地将偏振方向控制到固定方向。此外，在沟槽或沟槽充满相对于激光束吸收的金属材料或绝缘材料的情况下，激光束的偏振比进一步提高。

57. 发明申请

US20070153865A1 VERTICAL CAVITY SURFACE EMITTING LASER 有权
标题翻译：垂直孔表面发射激光
公开(公告)号：US20070153865A1
公开(公告)日：2007-07-05
申请号：US11612076
申请日：2006-12-18
申请人： Osamu Maeda , Masaki Shiozaki
发明人： Osamu Maeda , Masaki Shiozaki
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/18333 , H01S5/18338 , H01S2301/166
摘要： A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.
摘要翻译：提供了可以容易地制造并且可以选择性地仅抑制高阶横模振荡的VCSEL。 VCSEL包括谐振器，第一电流限制层和第二电流限制层。谐振器包括具有发光区域的有源层和在其间设置有有源层的一对第一多层反射器和第二多层反射器，并且在给定波长中产生谐振。第一电流限制层具有电流注入区域是与发光区域相对应的区域，并且形成在包括驻波的波腹的区域中。第二电流限制层具有直径小于第一电流注入区的直径的电流注入区，并形成在包括节点驻波的区域。

58. 发明授权

US07160749B2 Method and structure for eliminating polarization instability in laterally—oxidized VCSELs 有权
标题翻译：消除侧向氧化VCSEL中极化不稳定性的方法和结构
公开(公告)号：US07160749B2
公开(公告)日：2007-01-09
申请号：US09933960
申请日：2001-08-20
申请人： Christopher L. Chua , Robert L. Thornton , David W. Treat
发明人： Christopher L. Chua , Robert L. Thornton , David W. Treat
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18355 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18338 , H01S5/18358 , H01S5/18394 , H01S5/2063 , H01S5/2068 , H01S5/2081 , H01S5/34313 , H01S5/34353 , H01S5/423
摘要： The polarization instability inherent in laterally-oxidized VCSELs may be mitigated by employing an appropriately-shaped device aperture, a misoriented substrate, one or more cavities or employing the shaped device aperture together with a misoriented substrate and/or cavities. The laterally-oxidized VCSELs are able to operate in a single polarization mode throughout the entire light output power versus intensity curve. Combining the use of misoriented substrates with a device design that has an asymmetric aperture that reinforces the polarization mode favored by the substrate further improves polarization selectivity. Other device designs, however, can also be combined with substrate misorientation to strengthen polarization selectivity.
摘要翻译：侧向氧化VCSEL中固有的极化不稳定性可以通过采用适当形状的器件孔径，不对准衬底，一个或多个空腔或采用成形器件孔与错误取向的衬底和/或空腔一起来减轻。横向氧化的VCSEL能够在整个光输出功率对强度曲线中以单一偏振模式工作。结合使用不方向取向的基板与具有不对称孔径的装置设计，加强由基板有利的偏振模式进一步提高了极化选择性。然而，其他器件设计也可以与衬底取向差异化以增强极化选择性。

59. 发明授权

US07092425B1 VCSEL device with improved modal properties 有权
标题翻译：具有改善模态特性的VCSEL器件
公开(公告)号：US07092425B1
公开(公告)日：2006-08-15
申请号：US09680726
申请日：2000-10-05
申请人： Richard P. Schneider , Frank H. Peters , An-Nien Cheng , Laura Giovane , Hao-chung Kuo , Sheila K. Mathis
发明人： Richard P. Schneider , Frank H. Peters , An-Nien Cheng , Laura Giovane , Hao-chung Kuo , Sheila K. Mathis
IPC分类号： H01S5/183
CPC分类号： H01S5/18391 , H01S5/0207 , H01S5/18327 , H01S5/18338 , H01S5/3203 , H01S2301/18
摘要： Using lateral physical modulation, the optical properties of VCSELs can be stabilized and controlled by spatially varying the characteristics of the device material. This results in stabilization of the linewidth, the numerical aperture, the near and far field, as a function of bias and temperature. A VCSEL includes a substrate, an active region sandwiched between an upper and lower distributed Bragg reflector (DBRs), and electrical contacts. A light emission property e.g. the index of refraction, may be varied by patterning or texturing the surface of the substrate prior to growth of the epitaxial DBR layers or at least one layer of either the upper or lower DBRs, or by inserting a non-planar layer.
摘要翻译：通过使用横向物理调制，可以通过空间变化器件材料的特性来稳定和控制VCSEL的光学性质。这导致线宽，数值孔径，近场和远场的稳定，作为偏置和温度的函数。 VCSEL包括衬底，夹在上和下分布布拉格反射器（DBR）之间的有源区和电触点。发光特性例如折射率可以通过在外延DBR层或至少一层上DBR或下DBR的生长之前图案化或纹理化衬底的表面而改变，或者通过插入非平面层来改变。

60. 发明授权

US06982182B2 Moisture passivated planar index-guided VCSEL 有权
公开(公告)号：US06982182B2
公开(公告)日：2006-01-03
申请号：US10620137
申请日：2003-07-14
申请人： Seongsin Kim , Wilson H. Widjaja , Suning Xie
发明人： Seongsin Kim , Wilson H. Widjaja , Suning Xie
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18338 , H01S5/18313 , H01S5/2081 , H01S5/423 , H01S2301/176
摘要： Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region. Each of the etched holes is moisture passivated by an overlying moisture penetration barrier.

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