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1. 发明申请

US20050100070A1 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US20050100070A1
公开(公告)日：2005-05-12
申请号：US10940984
申请日：2004-09-15
申请人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
发明人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
IPC分类号： H01S5/183 , H01S5/42 , H01S5/00
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18311 , H01S5/18338 , H01S5/1835 , H01S5/423 , H01S2301/176
摘要： To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.
摘要翻译：为了提供表面发射型半导体激光器及其制造方法，其中可以容易地控制激光的偏振方向，表面发射型半导体激光器包括在衬底上方的垂直谐振器。垂直谐振器包括从衬底依次设置的第一反射镜，有源层和第二反射镜。垂直谐振器具有多个单元谐振器。每个单位谐振器的发射区域具有以单模振荡的直径。

2. 发明授权

US07983319B2 Surface-emitting type semiconductor laser that controls polarization directions of laser light and method for manufacturing the same 有权
标题翻译：控制激光的偏振方向的表面发射型半导体激光器及其制造方法
公开(公告)号：US07983319B2
公开(公告)日：2011-07-19
申请号：US12502748
申请日：2009-07-14
申请人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
发明人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
IPC分类号： H01S5/42 , H01S5/16
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18311 , H01S5/18338 , H01S5/1835 , H01S5/423 , H01S2301/176
摘要： To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.
摘要翻译：为了提供表面发射型半导体激光器及其制造方法，其中可以容易地控制激光的偏振方向，表面发射型半导体激光器包括在衬底上方的垂直谐振器。垂直谐振器包括从衬底依次设置的第一反射镜，有源层和第二反射镜。垂直谐振器具有多个单元谐振器。每个单位谐振器的发射区域具有以单模振荡的直径。

3. 发明授权

US07486713B2 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US07486713B2
公开(公告)日：2009-02-03
申请号：US10934450
申请日：2004-09-07
申请人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
发明人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18313 , H01S5/18316 , H01S5/18333 , H01S5/18338 , H01S5/18341 , H01S5/18347 , H01S5/18355 , H01S5/3432 , H01S2301/18
摘要： A surface-emitting type semiconductor laser includes a substrate; a first mirror disposed above the substrate; an active layer disposed above the first mirror; a second mirror disposed above the active layer; a first columnar section including the active layer, the first columnar section not having anisotropy; a first dielectric layer disposed in the first columnar section, the first dielectric layer including a symmetric opening section; a second columnar section disposed above the first columnar section, the second columnar section having an outer wall that has anisotropy; and a second dielectric layer disposed in the second columnar section, the second dielectric layer including an asymmetric opening section.
摘要翻译：表面发射型半导体激光器包括基板; 设置在所述基板上方的第一反射镜; 设置在第一反射镜上方的有源层; 位于有源层上方的第二反射镜; 第一柱状部分，包括有源层，第一柱状部分不具有各向异性; 设置在所述第一柱状部分中的第一介电层，所述第一介电层包括对称的开口部分; 设置在第一柱状部分上方的第二柱状部分，第二柱状部分具有具有各向异性的外壁; 以及设置在所述第二柱状部分中的第二电介质层，所述第二电介质层包括不对称开口部分。

4. 发明授权

US07580436B2 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US07580436B2
公开(公告)日：2009-08-25
申请号：US10940984
申请日：2004-09-15
申请人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
发明人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
IPC分类号： H01S5/00 , H01S3/08 , H01S3/082
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18311 , H01S5/18338 , H01S5/1835 , H01S5/423 , H01S2301/176
摘要： To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.
摘要翻译：为了提供表面发射型半导体激光器及其制造方法，其中可以容易地控制激光的偏振方向，表面发射型半导体激光器包括在衬底上方的垂直谐振器。垂直谐振器包括从衬底依次设置的第一反射镜，有源层和第二反射镜。垂直谐振器具有多个单元谐振器。每个单位谐振器的发射区域具有以单模振荡的直径。

5. 发明申请

US20050083981A1 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US20050083981A1
公开(公告)日：2005-04-21
申请号：US10934450
申请日：2004-09-07
申请人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
发明人： Tsuyoshi Kaneko , Tsugio Ide , Hitoshi Nakayama
IPC分类号： H01S5/183 , H01S5/00 , H01S5/042 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18313 , H01S5/18316 , H01S5/18333 , H01S5/18338 , H01S5/18341 , H01S5/18347 , H01S5/18355 , H01S5/3432 , H01S2301/18
摘要： A reliable surface-emitting type semiconductor laser and a method for manufacturing the same, is capable of controlling polarization planes of laser light without lowering the energy usage efficiency. The surface-emitting type semiconductor laser has a first mirror, an active layer and a second mirror formed above a substrate, a first columnar section formed adjacent to the active layer and including a dielectric layer defining an opening section and a second columnar section formed above the first columnar section. A planar configuration of the second columnar section has anisotropy.
摘要翻译：可靠的表面发射型半导体激光器及其制造方法能够在不降低能量使用效率的情况下控制激光的偏振面。表面发射型半导体激光器具有形成在基板上方的第一反射镜，有源层和第二反射镜，邻近有源层形成的第一柱状部分，并且包括限定开口部分的介电层和形成在上面的第二柱状部分第一个柱状部分。第二柱状部分的平面构型具有各向异性。

6. 发明授权

US07267839B2 Method of and apparatus for applying liquid material 有权
标题翻译：液体材料的应用方法和设备
公开(公告)号：US07267839B2
公开(公告)日：2007-09-11
申请号：US10921869
申请日：2004-08-20
申请人： Koji Tanaka , Hitoshi Nakayama , Shinji Atsuzawa , Youichi Andoh
发明人： Koji Tanaka , Hitoshi Nakayama , Shinji Atsuzawa , Youichi Andoh
IPC分类号： B05D1/26
CPC分类号： B05B15/68
摘要： Disclosed is a method, in which when a liquid material is applied to the application surface of an object of application by using a liquid material supply device having a syringe containing the liquid material and equipped with a needle having at its distal end an ejection hole from which the liquid material is ejected, an image of the distal end of the needle is taken laterally by a horizontal camera together with a height reference mark when an ascent/descent drive system of the liquid material supply device is set to a reference height, and the height position of the distal end of the needle is obtained from the difference between the height of the distal end of the needle and the height of the height reference mark.
摘要翻译：公开了一种方法，其中当通过使用具有含有液体材料的注射器的液体材料供应装置将液体材料施加到施加物体的施加表面上并且配备有在其远端具有喷射孔的喷射孔时，当液体材料供给装置的上升/下降驱动系统被设定为参考高度时，液体材料被喷射的情况下，水平摄像机的横向摄像机与高度参考标记一起被拍摄针的远端的图像，以及针的远端的高度位置是根据针的远端的高度与高度参考标记的高度之间的差来获得的。

7. 发明授权

US5878484A Chip-type circuit element mounting apparatus 失效
标题翻译：片式电路元件安装装置
公开(公告)号：US5878484A
公开(公告)日：1999-03-09
申请号：US631827
申请日：1995-12-28
申请人： Shinichi Araya , Kouji Kudou , Akihiro Katou , Hitoshi Nakayama , Masakazu Toki , Kazuya Abe
发明人： Shinichi Araya , Kouji Kudou , Akihiro Katou , Hitoshi Nakayama , Masakazu Toki , Kazuya Abe
IPC分类号： H05K13/04 , H05K3/30
CPC分类号： H05K13/0413 , Y10T29/49131 , Y10T29/53091 , Y10T29/53174 , Y10T29/53178 , Y10T29/53191
摘要： A chip mounting apparatus capable of permitting a chip mounting operation to be executed at an increased speed and ensuring continuous running of the apparatus over a long period of time. The apparatus includes a chip observing camera mounted on the side of a chip mounting head, a lighting unit mounted on the side of the chip mounting head to light a background of a chip held on a chip suction nozzle of the head, a reflection unit mounted on the side of the chip mounting head to input an image of the chip to the chip observing camera, feeder and stocker sections each adapted to replaceably held a chip storage package therein, and a package replacement mechanism for carrying out replacement of the chip storage package between both sections.
摘要翻译：一种芯片安装装置，其能够以更高的速度进行芯片安装操作，并且确保设备在长时间内的连续运行。该装置包括安装在芯片安装头侧的芯片观察摄像机，安装在芯片安装头侧的照明单元，以照亮保持在头部的芯片吸嘴上的芯片的背景;安装在芯片安装头的侧面，将芯片的图像输入到芯片观察摄像机，馈送器和储片器部分，每个适配器可更换地保持其中的芯片存储包装;以及封装更换机构，用于执行芯片存储封装两部分之间。

8. 发明授权

US5296635A Preparation of bis(3-nitrophenoxy) compound 失效
标题翻译：双（3-硝基苯氧基）化合物的制备
公开(公告)号：US5296635A
公开(公告)日：1994-03-22
申请号：US975952
申请日：1992-11-13
申请人： Motohiro Kase , Hitoshi Nakayama , Masaru Wada , Teruyuki Nagata , Akihiro Yamaguchi
发明人： Motohiro Kase , Hitoshi Nakayama , Masaru Wada , Teruyuki Nagata , Akihiro Yamaguchi
IPC分类号： C07C201/12 , C07C205/38 , C07C315/04 , C07C317/22 , C07C319/20 , C07C323/20 , C07C41/09 , C07C205/06
CPC分类号： C07C201/12 , C07C315/04 , C07C319/20
摘要： A preparation process of a bis(3-nitrophenoxy) compound represented by the formula: ##STR1## wherein X is a direct bond, divalent hydrocarbon having from 1 to 10 carbon atoms or a divalent group selected from --C(CF.sub.3).sub.2, --CO--, --S--, --SO--, SO.sub.2 --or --O--, which comprises reacting 4,4'-bisphenol with m-dinitrobenzene in the presence of an alkali metal carbonate or alkali metal hydrogen carbonate having a particle size of 250 .mu.m or less while removing generated water from the reaction system during the reaction. In one embodiment of the process, the reaction is carried out while simultaneously adding 4,4'-bisphenol and m-dinitrobenzene to a reaction vessel which was previously charged with the base and an aprotic polar solvent.
摘要翻译：由下式表示的双（3-硝基苯氧基）化合物的制备方法：其中X是直接键，具有1至10个碳原子的二价烃或选自-C（CF 3）2 - 的二价基团， CO-，-S-，-SO-，SO 2 - 或-O-，其包括在碱金属碳酸盐或粒度为250的碱金属碳酸氢盐存在下使4,4'-双酚与间二硝基苯反应在反应期间从反应体系中除去产生的水。在该方法的一个实施方案中，反应进行同时向预先装入碱和反质子极性溶剂的反应容器中加入4,4'-双酚和间二硝基苯。

9. 发明授权

US4827891A Ignition apparatus for preventing unnecessary charging in an internal combustion engine 失效
标题翻译：用于防止内燃机中不必要的充气的点火装置
公开(公告)号：US4827891A
公开(公告)日：1989-05-09
申请号：US82345
申请日：1987-08-06
申请人： Nobuo Miura , Hitoshi Nakayama , Nolihisa Ishii , Hidenori Maeda
发明人： Nobuo Miura , Hitoshi Nakayama , Nolihisa Ishii , Hidenori Maeda
IPC分类号： F02P3/09
CPC分类号： F02P3/093
摘要： An ignition apparatus of a capacitor discharge ignition type comprises: an ignition timing signal generator to generate an ignition timing signal synchronized with the rotation of the engine; a capacitor; a blocking oscillator; a rectifier for rectifying the output voltage of the blocking oscillator and applying the rectified voltage to the capacitor thereby charging the capacitor; a switching device which is turned on in response to the ignition timing signal and discharges the stored charges of the capacitor, thereby generating a pulse voltage across the terminals of the primary winding of an ignition coil; and an ignition plug to generate a spark discharge by a high voltage generated in the secondary winding of the ignition coil. The blocking oscillator oscillates concurrently with the engine rotation. When the ignition timing signal is generated, the oscillation of the blocking oscillator is stopped in accordance with a phase of the output voltage of the AC generator. With this apparatus, a vain charging of the capacitor and a vain spark discharge can be prevented when the engine's rotation stops. The generation of a counter torque on the engine can be certainly prevented.
摘要翻译：电容放电点火型点火装置包括：点火定时信号发生器，用于产生与发动机旋转同步的点火正时信号; 电容器阻塞振荡器; 整流器，用于整流阻塞振荡器的输出电压，并将整流电压施加到电容器，从而对电容器充电; 开关装置，其响应于点火正时信号而导通，并且释放所存储的电容器的电荷，从而在点火线圈的初级绕组的端子两端产生脉冲电压; 以及火花塞，通过在点火线圈的次级绕组中产生的高电压产生火花放电。阻塞振荡器与发动机旋转同时振荡。当产生点火定时信号时，根据交流发电机的输出电压的相位停止阻塞振荡器的振荡。利用该装置，当发动机的转动停止时，可以防止电容器的充电和无效的火花放电。可以可靠地防止在发动机上产生反扭矩。

10. 发明授权

US4719896A Capacitive discharge ignition device 失效
标题翻译：电容放电点火装置
公开(公告)号：US4719896A
公开(公告)日：1988-01-19
申请号：US2969
申请日：1987-01-13
申请人： Hitoshi Nakayama , Nobuo Miura , Yoshio Morita , Masami Kawabe
发明人： Hitoshi Nakayama , Nobuo Miura , Yoshio Morita , Masami Kawabe
IPC分类号： F02P3/08 , F02P3/09
CPC分类号： F02P3/0884
摘要： A capacitive discharge ignition system has first and second bypass elements. The bypass elements are controlled to effect equal charging from the positive and negative portions of the generator alternating power output, and to provide conductive paths for the ignition current outside the generator winding. This lessens current-induced generation of heat in the generator winding.
摘要翻译：电容放电点火系统具有第一和第二旁路元件。旁路元件被控制以从发电机交流功率输出的正和负部分实现相等的充电，并且为发电机绕组外部的点火电流提供导电路径。这减少了发电机绕组中电流产生的热量。

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