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51. 发明申请

US20170025290A1 LOAD LOCK APPARATUS AND SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：负载锁定装置和基板处理系统
公开(公告)号：US20170025290A1
公开(公告)日：2017-01-26
申请号：US15216161
申请日：2016-07-21
申请人： TOKYO ELECTRON LIMITED
发明人： Shinji WAKABAYASHI
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67201 , H01L21/67373 , H01L21/67772
摘要： A load lock apparatus having a load lock chamber, which is connected to a vacuum transfer chamber configured to transfer a substrate under a vacuum pressure state via a communication hole which is opened and closed by a gate valve, and configured to be capable of switching an inner pressure into an atmospheric pressure state and the vacuum pressure state, is provided. The load lock apparatus includes a load lock chamber main body in which a substrate container having an attachable/detachable cover is carried, wherein the communication hole is formed in a side surface of the load lock chamber; and a cover attaching/detaching mechanism installed at a height position vertically arranged with the communication hole in the load lock chamber; and an elevating mechanism including a mounting table on which the substrate container is loaded and configured to lift and lower the mounting table.
摘要翻译：一种具有负载锁定室的装载锁定装置，其连接到真空传送室，所述真空传送室被构造成通过由闸阀打开和关闭的连通孔在真空压力状态下传送基板，并且被配置为能够切换提供内压到大气压状态和真空压力状态。装载锁定装置包括装载锁定室主体，其中承载有具有可拆卸盖的基板容器，其中连通孔形成在装载锁定室的侧表面中; 以及安装在与所述连接孔垂直设置在所述加载锁定室中的高度位置处的盖安装/拆卸机构; 以及升降机构，其包括安装台，载置基板容器并构造为升降所述安装台。

52. 发明申请

US20160358796A1 Cable drive robot mechanism for exchanging samples 审中-公开
标题翻译：用于交换样品的电缆驱动机器人机构
公开(公告)号：US20160358796A1
公开(公告)日：2016-12-08
申请号：US15166045
申请日：2016-05-26
申请人： DONGFANG JINGYUAN ELECTRON LIMITED
发明人： Yuhai Mu , Lei Jiang , Zongqiang Yu
IPC分类号： H01L21/67 , H01L21/677 , B25J9/10 , B25J18/04 , B25J9/00
CPC分类号： H01L21/67288 , B25J9/0087 , B25J9/1045 , B25J18/04 , F16H19/005 , H01L21/67201 , H01L21/67213 , H01L21/67742
摘要： Techniques of swapping two samples with a mechanical arm that has no backlash, no friction, no particle contamination are described. With the unique structure and the material used for the cables, the mechanical arm provides considerable operating life. When used in a semiconductor inspection system, the mechanical arm, also referred to herein a cable drive robot mechanism, can be advantageously used to swap two wafers as part or within the inspection system. The two wafers, one examined and the other one yet to be examined, can be swapped between two chambers. During the exchanging process, the cable drive robot mechanism seamlessly picks up an examined wafer to exit one chamber while loading up an unexamined wafer to enter another chamber at the same time.
摘要翻译：描述了用不具有间隙，无摩擦，无颗粒污染的机械臂交换两个样品的技术。凭借独特的结构和用于电缆的材料，机械臂可提供可观的使用寿命。当用于半导体检查系统时，机械臂（这里也称为电缆驱动机器人机构）可以有利地用于将两个晶片交换为检查系统中的一部分或内部。两个晶片，一个检查，另一个尚待检查，可以在两个室之间交换。在交换过程中，电缆驱动机器人机构无缝地拾取被检查的晶片以在同时加载未检查的晶片进入另一个室的同时离开一个室。

53. 发明授权

US09478446B2 Load lock chamber 有权
标题翻译：加载锁定室
公开(公告)号：US09478446B2
公开(公告)日：2016-10-25
申请号：US14195086
申请日：2014-03-03
申请人： Brooks Automation, Inc.
发明人： Christopher Hofmeister , Martin R. Elliot , Alexander Krupyshev , Joseph Hallisey , Joseph A. Kraus , William Fosnight , Craig J. Carbone , Jeffrey C. Blahnik , Ho Yin Owen Fong
IPC分类号： H01L21/67
CPC分类号： H01L21/67098 , H01L21/67126 , H01L21/6719 , H01L21/67201
摘要： A semiconductor processing tool is disclosed, the tool having a frame forming at least one chamber with an opening and having a sealing surface around a periphery of the opening, a door configured to interact with the sealing surface for sealing the opening, the door having sides perpendicular to the door sealing surface and perpendicular to a transfer plane of a substrate, and at least one drive located on the frame to a side of at least one of the sides that are substantially perpendicular to the door sealing surface and substantially perpendicular to the transfer plane of the substrate, the drive having actuators located at least partially in front of the sealing surface and the actuators being coupled to one of the sides of the door for moving the door from a sealed position. The at least one drive is located outside of a substrate transfer zone.
摘要翻译：公开了一种半导体加工工具，所述工具具有框架，所述框架形成具有开口的至少一个室，并且具有围绕所述开口的周边的密封表面;门构造成与所述密封表面相互作用以密封所述开口，所述门具有侧面垂直于所述门密封表面并垂直于衬底的传输平面的至少一个驱动器，以及位于所述框架上的至少一个侧面的至少一个驱动器，所述驱动器基本上垂直于所述门密封表面并且基本上垂直于所述传送所述驱动器具有至少部分地位于所述密封表面前面的致动器，并且所述致动器联接到所述门的一侧以将所述门从密封位置移动。至少一个驱动器位于衬底转移区的外部。

54. 发明申请

US20160254222A1 METALLIZATION OF THE WAFER EDGE FOR OPTIMIZED ELECTROPLATING PERFORMANCE ON RESISTIVE SUBSTRATES 审中-公开
标题翻译：用于优化电阻基板上电镀性能的波形边缘的金属化
公开(公告)号：US20160254222A1
公开(公告)日：2016-09-01
申请号：US15148496
申请日：2016-05-06
申请人： Lam Research Corporation
发明人： Artur Kolics
IPC分类号： H01L23/528 , C23C18/16 , H01L21/67 , H01L21/768 , H01L21/288
CPC分类号： H01L23/528 , C23C18/161 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/1633 , C23C18/1653 , C23C18/1664 , C25D5/02 , C25D7/00 , C25D7/12 , H01L21/02021 , H01L21/288 , H01L21/2885 , H01L21/32051 , H01L21/3212 , H01L21/67196 , H01L21/67201 , H01L21/6723 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： A system for electroless deposition on a substrate is provided, including the following: a chamber; a substrate support configured to receive a substrate having a conductive layer disposed on a top surface of the substrate, the top surface of the substrate having an edge exclusion region and a process region, wherein the substrate support is configured to rotate the substrate; a solution container configured to hold an electroless deposition solution; a dispenser configured to provide a flow of the electroless deposition solution; a controller, the controller configured to direct the flow of the electroless deposition solution toward the edge exclusion region while the substrate is rotated, the flow being directed away from the process region, the electroless deposition solution plates metallic material over the conductive layer at the edge exclusion region, to produce an increased thickness of the metallic material that reduces electrical resistance.
摘要翻译：提供了一种用于在基底上进行无电沉积的系统，包括：腔室; 衬底支撑件，被配置为接收具有设置在所述衬底的顶表面上的导电层的衬底，所述衬底的顶表面具有边缘排除区域和工艺区域，其中所述衬底支撑件被配置为旋转所述衬底; 配置成保持无电解沉积溶液的溶液容器; 分配器，被配置为提供无电沉积溶液的流动; 控制器，所述控制器被配置为在所述基板旋转的同时将所述无电沉积溶液的流动引向所述边缘排除区域，所述流动被引导离开所述处理区域，所述无电沉积溶液在所述边缘的导电层上方金属材料以产生降低电阻的金属材料的增加的厚度。

55. 发明申请

US20160240410A1 SUBSTRATE LIFT ASSEMBLIES 审中-公开
标题翻译：基座提升组件
公开(公告)号：US20160240410A1
公开(公告)日：2016-08-18
申请号：US15139274
申请日：2016-04-26
申请人： Applied Materials, Inc.
发明人： Paul B. Reuter , Ganesh Balasubramanian , JuanCarlos Rocha-Alvarez , Jeffrey B. Robinson , Dale Robert du Bois , Paul Connors
IPC分类号： H01L21/67 , H01L21/673 , H01L21/677
CPC分类号： H01L21/67178 , H01L21/67103 , H01L21/6719 , H01L21/67201 , H01L21/67313 , H01L21/67712 , Y10T29/49998
摘要： A substrate lift assembly is disclosed. The substrate lift assembly includes a lift frame, a plurality of fingers extending from the frame, the fingers adapted to support a substrate, and a containment ring supported by the lift frame. Process load locks including the substrate lift assembly are disclosed, as are other aspects.
摘要翻译：公开了一种基板升降组件。基板升降组件包括升降架，从框架延伸的多个指状物，适于支撑基板的指状物以及由升降机架支撑的收容环。与其他方面一样，公开了包括基板升降组件的过程负载锁定。

56. 发明授权

US09396951B2 System and method for mitigating oxide growth in a gate dielectric 有权
公开(公告)号：US09396951B2
公开(公告)日：2016-07-19
申请号：US14858422
申请日：2015-09-18
申请人： Texas Instruments Incorporated
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/00 , H01J37/00 , H01L21/28 , H01L21/316 , H01L21/318 , H01L29/51 , H01L29/78 , H01L21/02 , H01L21/67 , H01L21/3105 , H01L21/3205 , H01L21/677 , H01L21/324 , H01L29/423 , H01L29/66 , H01L29/49
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

57. 发明授权

US09385015B2 Transfer chamber and method for preventing adhesion of particle 有权
标题翻译：转移室和防止颗粒附着的方法
公开(公告)号：US09385015B2
公开(公告)日：2016-07-05
申请号：US12700771
申请日：2010-02-05
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67184 , H01L21/67069 , H01L21/67196 , H01L21/67201 , H01L21/67213 , H01L21/67742 , H01L21/6831
摘要： A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.
摘要翻译：传送室设置在用于在减压环境中对要处理的目标基板进行预定处理的处理单元和用于将目标基板保持在大气环境中以在其间传送目标基板的大气保持单元。传送室包括用于容纳目标基板的室主体，用于排出室主体以将室主体设置到减压环境的排气单元，以及用于将预定气体供应到室主体的气体供应单元将室主体设置在大气环境中。此外，在传送室中，离子化单元设置在室主体的外部，用于电离所述预定气体，并且提供电离气体供应单元以将由离子化单元产生的电离气体供应到室主体。

58. 发明授权

US09378992B2 High throughput heated ion implantation system and method 有权
标题翻译：高通量加热离子注入系统及方法
公开(公告)号：US09378992B2
公开(公告)日：2016-06-28
申请号：US14317778
申请日：2014-06-27
申请人： Axcelis Technologies, Inc.
发明人： Armin Huseinovic , Joseph Ferrara , Brian Terry
IPC分类号： H01J37/18 , H01J37/20 , H01L21/67 , H01L21/265 , H01L21/677 , H01J37/317
CPC分类号： H01L21/67201 , H01J37/185 , H01J37/20 , H01J37/3171 , H01L21/265 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/67161 , H01L21/67213 , H01L21/67712
摘要： An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.
摘要翻译：离子注入系统具有耦合到第一和第二双负载锁定组件的离子注入装置，每个具有由公共壁分隔的相应的第一和第二室。每个第一室具有构造成将工件加热到第一温度的预热装置。每个第二腔室具有后冷却装置，其构造成将工件冷却至第二温度。热卡盘将工件保持在用于离子注入的处理室中，并且热卡盘构造成将工件加热到第三温度。泵和排气口与第一和第二室选择性地流体连通。控制器被配置为经由预热装置在大气环境中将工件加热到第一温度，以经由热卡盘将工件加热到第二温度，以通过离子注入装置将离子注入工件，并且通过预热装置，后冷却装置，泵，通风口和热卡盘的控制在大气和真空环境之间传送工件。

59. 发明授权

US09370052B2 Optimized allocation of microwave power in multi-launcher systems 有权
标题翻译：在多发射系统中优化微波功率分配
公开(公告)号：US09370052B2
公开(公告)日：2016-06-14
申请号：US13799746
申请日：2013-03-13
申请人： Microwave Materials Technologies, Inc.
发明人： Harold Dail Kimrey, Jr.
IPC分类号： H05B6/68 , H05B6/80 , H05B6/78 , H01L21/67 , H05B6/70
CPC分类号： H05B6/78 , A23L3/01 , A23L3/02 , A23V2002/00 , A61B90/70 , A61L2/04 , A61L2/12 , A61L2202/21 , A61L2202/24 , A61L2202/26 , B65B55/06 , H01L21/67201 , H05B6/68 , H05B6/70 , H05B6/782 , H05B6/80
摘要： A microwave system for heating a plurality of articles and a method of using the same is provided. The microwave heating system comprises at least three microwave launchers and at least three microwave allocation devices for dividing the microwave energy into at least three separate portions. Each allocation device is configured to divide the microwave energy passing therethrough according to a predetermined ratio, and at least one of the allocation devices is configured to divide the microwave energy according to a predetermined ratio that is not 1:1. The resulting energy portions can then be discharged into the microwave heating chamber via the launchers and used to heat a plurality of articles, including foodstuffs, medical fluids, or medical instruments, disposed within the heating chamber.
摘要翻译：提供一种用于加热多个物品的微波系统及其使用方法。微波加热系统包括至少三个微波发射器和至少三个微波分配装置，用于将微波能量分成至少三个分开的部分。每个分配装置被配置为根据预定比例分配通过其中的微波能量，并且至少一个分配装置被配置为根据不是1：1的预定比率来划分微波能量。所得的能量部分然后可以经由发射器被排放到微波加热室中，并且用于加热设置在加热室内的多个物品，包括食品，医疗流体或医疗器械。

60. 发明授权

US09368340B2 Metallization of the wafer edge for optimized electroplating performance on resistive substrates 有权
标题翻译：晶圆边缘金属化，以优化电阻基板上的电镀性能
公开(公告)号：US09368340B2
公开(公告)日：2016-06-14
申请号：US14294006
申请日：2014-06-02
申请人： Lam Research Corporation
发明人： Artur Kolics
IPC分类号： H01L21/00 , H01L21/02 , C25D5/02 , C25D7/00 , C23C18/16 , H01L21/3205 , H01L21/321
CPC分类号： H01L23/528 , C23C18/161 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/1633 , C23C18/1653 , C23C18/1664 , C25D5/02 , C25D7/00 , C25D7/12 , H01L21/02021 , H01L21/288 , H01L21/2885 , H01L21/32051 , H01L21/3212 , H01L21/67196 , H01L21/67201 , H01L21/6723 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： A method for electroplating a substrate is provided, including: providing a substrate having a conductive layer disposed on a top surface of the substrate, the top surface of the substrate having an edge exclusion region and a process region; directing a flow of an electroless deposition solution toward the edge exclusion region while the substrate is rotated, to plate metallic material over the conductive layer at the edge exclusion region; continuing the flow of the electroless deposition solution for a period of time to produce an increased thickness of the metallic material at the edge exclusion region, wherein the increased thickness of the metallic material reduces electrical resistance of the metallic material at the edge exclusion region; applying electrical contacts over the metallic material, and applying electrical current to the metallic material via the electrical contacts while an electroplating solution is applied over the process region of the substrate.
摘要翻译：提供了一种用于电镀基板的方法，包括：提供具有设置在所述基板的顶表面上的导电层的基板，所述基板的顶表面具有边缘排除区域和处理区域; 在衬底旋转的同时将无电沉积溶液的流动引导到边缘排除区域，以在边缘排除区域的导电层上镀金属材料; 继续无电沉积溶液的流动一段时间以在边缘排除区域产生金属材料的增加的厚度，其中金属材料的增加的厚度降低了边缘排除区域处的金属材料的电阻; 在所述金属材料上施加电触点，并且通过所述电触点向所述金属材料施加电流，同时将电镀溶液施加在所述基板的所述工艺区域上。

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