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51. 发明授权

US06358842B1 Method to form damascene interconnects with sidewall passivation to protect organic dielectrics 有权
标题翻译：形成具有侧壁钝化的镶嵌互连以保护有机电介质的方法
公开(公告)号：US06358842B1
公开(公告)日：2002-03-19
申请号：US09633770
申请日：2000-08-07
申请人： Mei-Sheng Zhou , Simon Chooi , Yi Xu
发明人： Mei-Sheng Zhou , Simon Chooi , Yi Xu
IPC分类号： H01L213205
CPC分类号： H01L21/76831 , H01L21/31138 , H01L21/76808
摘要： A new method of forming a damascene interconnect in the manufacture of an integrated circuit device has been achieved. The damascene interconnect may be a single damascene or a dual damascene. Copper conductors are provided overlying a semiconductor substrate. A first passivation layer is provided overlying the copper conductors. A low dielectric constant layer is deposited overlying the first passivation layer. An optional capping layer is deposited overlying the low dielectric constant layer. A photoresist layer is deposited overlying the capping layer. The capping layer and the low dielectric constant layer are etched through to form via openings. The photoresist layer is simultaneously stripped away while forming a sidewall passivation layer on the sidewalls of the via openings using a sulfur-containing gas. Sidewall bowing and via poisoning are thereby prevented. The first passivation layer is etched through to expose the underlying copper conductors. A copper layer is deposited overlying the capping layer and filling the via openings. The copper layer is polished down to complete the damascene interconnects in the manufacture of the integrated circuit device.
摘要翻译：已经实现了在集成电路器件的制造中形成镶嵌互连的新方法。镶嵌互连可以是单镶嵌或双镶嵌。提供铜导体覆盖在半导体衬底上。第一钝化层被提供在铜导体上。沉积在第一钝化层上的低介电常数层。沉积覆盖在低介电常数层上的可选的覆盖层。沉积在覆盖层上的光致抗蚀剂层。覆盖层和低介电常数层被蚀刻通过以形成通孔。同时剥离光致抗蚀剂层，同时使用含硫气体在通路孔的侧壁上形成侧壁钝化层。从而防止侧壁弯曲和通过中毒。蚀刻第一钝化层以暴露下面的铜导体。沉积覆盖覆盖层并填充通孔的铜层。铜层被抛光以在集成电路器件的制造中完成镶嵌互连。

52. 发明授权

US06350675B1 Integration of silicon-rich material in the self-aligned via approach of dual damascene interconnects 失效
标题翻译：将富硅材料集成在双镶嵌互连的自对准通孔中
公开(公告)号：US06350675B1
公开(公告)日：2002-02-26
申请号：US09686282
申请日：2000-10-12
申请人： Simon Chooi , Mei-Sheng Zhou , Subhash Gupta , Yi Xu
发明人： Simon Chooi , Mei-Sheng Zhou , Subhash Gupta , Yi Xu
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/7681 , H01L21/76825 , H01L21/76826
摘要： This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically, in the formation of self-aligned dual damascene interconnects and vias, which incorporates low dielectric constant intermetal dielectrics (IMD) and utilizes silylated top surface imaging (TSI) photoresist, with a single or multi-step selective reactive ion etch (RIE) process, to form trench/via opening. The invention incorporates the use of a silylated top surface imaging (TSI) resist etch barrier layer to form the via pattern, in the first level of a dual damascene process. Two variations of using the top surface imaging (TSI) resist, with and without leaving an exposed region in place, are described in the first and second embodiment of the invention, and in addition, a thin dielectric layer is made use of just below the resist layer. Provided adhesion between the top surface imaging (TSI) photoresist and the low dielectric constant intermetal dielectric (IMD) is good, the thin dielectric layer described above can be omitted, yielding the third and fourth embodiment of the invention. Special attention in the process is given to protecting the integrity of the low dielectric constant intermetal dielectric (ILD) material, selected from the group consisting of organic based or carbon doped silicon dioxide.
摘要翻译：本发明涉及用于半导体集成电路器件的制造方法，更具体地说，涉及形成自对准的双镶嵌互连和通孔，其结合了低介电常数金属间电介质（IMD）并利用甲硅烷基化的顶表面成像（TSI ）光致抗蚀剂，具有单步或多步选择性反应离子蚀刻（RIE）工艺，以形成沟槽/通孔。本发明包括在双镶嵌工艺的第一水平中使用甲硅烷基化的顶表面成像（TSI）抗蚀剂蚀刻阻挡层以形成通孔图案。在本发明的第一和第二实施例中描述了使用顶表面成像（TSI）抗蚀剂的两种变型，其具有和不具有将暴露区域保持在适当位置，此外，使用刚好低于抗蚀剂层。提供顶表面成像（TSI）光致抗蚀剂和低介电常数金属间电介质（IMD）之间的粘附性是好的，可以省略上述薄介电层，产生本发明的第三和第四实施例。该方法中特别注意保护低介电常数金属间电介质（ILD）材料的完整性，该材料选自有机基或掺碳二氧化硅。

53. 发明授权

US06165891A Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer 有权
标题翻译：使用碳氮化物，氮化硼或氮化硼钝化层，蚀刻停止层和/或覆盖层的具有降低的电容的镶嵌结构
公开(公告)号：US06165891A
公开(公告)日：2000-12-26
申请号：US435434
申请日：1999-11-22
申请人： Simon Chooi , Yi Xu , Mei Sheng Zhou
发明人： Simon Chooi , Yi Xu , Mei Sheng Zhou
IPC分类号： H01L21/311 , H01L21/318 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763 , G03C5/00 , H01L21/302 , H01L23/48
CPC分类号： H01L21/76835 , H01L21/31122 , H01L21/318 , H01L21/76802 , H01L21/76807 , H01L21/76829 , H01L21/76834 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for forming a damascene structure with reduced capacitance by forming one or more of: the passivation layer, the etch stop layer, and the cap layer using a low dielectric constant material comprising carbon nitride, boron nitride, or boron carbon nitride. The method begins by providing a semiconductor structure having a first conductive layer thereover. A passivation layer is formed on the first conductive layer. A first dielectric layer is formed over the passivation layer, and an etch stop layer is formed over the first dielectric layer. A second dielectric layer is formed over the etch stop layer, and an optional cap layer can be formed over the second dielectric layer. The cap layer, the second dielectric layer, the etch stop layer, and the first dielectric layer are patterned to form a via opening stopping on said passivation layer and a trench opening stopping on the first conductive layer. A carbon nitride passivation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen atmosphere. A boron nitride passivation layer, etch stop layer, or cap layer can be formed by PECVD using B.sub.2 H.sub.6, ammonia, and nitrogen. A boron carbon nitride passivatation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen and B.sub.2 H.sub.6 atmosphere.
摘要翻译：通过使用包含碳氮化物，氮化硼或碳氮化硼的低介电常数材料通过形成钝化层，蚀刻停止层和盖层中的一个或多个来形成具有降低的电容的镶嵌结构的方法和结构。该方法开始于提供其上具有第一导电层的半导体结构。在第一导电层上形成钝化层。第一电介质层形成在钝化层之上，并且在第一介电层上形成蚀刻停止层。第二介电层形成在蚀刻停止层上方，并且可以在第二介电层上形成任选的盖层。图案化盖层，第二电介质层，蚀刻停止层和第一介电层，以形成在所述钝化层上停止的通孔开口和在第一导电层上停止的沟槽开口。碳氮化物钝化层，蚀刻停止层或盖层可以通过在氮气气氛中的石墨靶磁控溅射来形成。可以通过使用B2H6，氨和氮的PECVD形成氮化硼钝化层，蚀刻停止层或盖层。硼氮化物钝化层，蚀刻停止层或盖层可以通过在氮气和B2H6气氛中的石墨靶的磁控溅射形成。

54. 发明授权

US6159759A Method to form liquid crystal displays using a triple damascene technique 有权
标题翻译：使用三重镶嵌技术形成液晶显示器的方法
公开(公告)号：US6159759A
公开(公告)日：2000-12-12
申请号：US443423
申请日：1999-11-19
申请人： Kai Shao , Cerdin Lee , Yi Xu , Shao-Fu Sanford Chu
发明人： Kai Shao , Cerdin Lee , Yi Xu , Shao-Fu Sanford Chu
IPC分类号： G02F1/1335 , G02F1/1362 , H01L21/00
CPC分类号： G02F1/133553 , G02F1/136277
摘要： A new method of forming liquid crystal displays has been achieved. Metal conductors are provided in an insulating layer overlying a semiconductor substrate. A first isolation layer is deposited. A first silicon nitride layer is deposited. The first silicon nitride layer is patterned to form openings for planned vias overlying the metal conductors. A second isolation layer is deposited. A second silicon nitride layer is deposited. The second silicon nitride layer is patterned to form masks overlying where dummy supports for the metal pixels are planned and to form openings to extend the planned vias. A third isolation layer is deposited. The third isolation layer is patterned to form openings for the planned metal pixels. The second isolation layer and the first isolation layer are etched through to complete the vias and the dummy supports. A metal layer is deposited filling the openings for the metal pixels, the dummy support, and the vias. The metal layer is polished down to the top surface of the third isolation layer to complete the metal pixels. A thin film passivation is deposited. A liquid crystal layer is deposited. A transparent image point electrode is formed to complete the liquid crystal display.
摘要翻译：已经实现了一种形成液晶显示器的新方法。金属导体设置在覆盖半导体衬底的绝缘层中。沉积第一隔离层。沉积第一氮化硅层。图案化第一氮化硅层以形成覆盖金属导体的计划通孔的开口。沉积第二隔离层。沉积第二氮化硅层。图案化第二氮化硅层以形成掩模，覆盖着金属像素的虚拟支撑被设计并形成扩展计划的通孔的开口。沉积第三个隔离层。图案化第三隔离层以形成用于计划的金属像素的开口。蚀刻第二隔离层和第一隔离层以完成通孔和虚拟支撑。沉积金属层，填充用于金属像素，虚拟支撑件和通孔的开口。金属层被抛光到第三隔离层的顶表面以完成金属像素。沉积薄膜钝化。沉积液晶层。形成透明图像点电极以完成液晶显示器。

55. 发明授权

US6117747A Integration of MOM capacitor into dual damascene process 有权
标题翻译：将MOM电容器集成到双镶嵌工艺中
公开(公告)号：US6117747A
公开(公告)日：2000-09-12
申请号：US435436
申请日：1999-11-22
申请人： Kai Shao , Yi Xu , Cerdin Lee , Shao-Fu Sanford Chu
发明人： Kai Shao , Yi Xu , Cerdin Lee , Shao-Fu Sanford Chu
IPC分类号： H01L21/02 , H01L21/768 , H01L21/20
CPC分类号： H01L28/40 , H01L21/76838 , H01L28/60
摘要： A method for fabricating a metal-oxide-metal capacitor using a dual damascene process is described. A dielectric layer is provided overlying a semiconductor substrate. A dual damascene opening in the dielectric layer is filled with copper to form a copper via underlying a copper line. A first metal layer is deposited overlying the copper line and patterned to form a bottom capacitor plate contacting the copper line. A capacitor dielectric layer is deposited overlying the bottom capacitor plate. A second metal layer is deposited overlying the capacitor dielectric layer and patterned to form a top capacitor plate to complete fabrication of a metal-oxide-metal capacitor.
摘要翻译：描述了使用双镶嵌工艺制造金属氧化物 - 金属电容器的方法。提供覆盖在半导体衬底上的电介质层。电介质层中的双镶嵌开口填充有铜，通过铜线下方形成铜。沉积在铜线上的第一金属层被图案化以形成接触铜线的底部电容器板。电容器电介质层沉积在底部电容器板上。将第二金属层沉积在电容器介电层上并被图案化以形成顶部电容器板，以完成金属氧化物 - 金属电容器的制造。

56. 发明授权

US5859508A Electronic fluorescent display system with simplified multiple electrode structure and its processing 失效
标题翻译：电子荧光显示系统具有简化的多电极结构及其加工
公开(公告)号：US5859508A
公开(公告)日：1999-01-12
申请号：US846029
申请日：1997-04-25
申请人： Shichao Ge , Xi Huang , Yi Xu , Charles S. Leung
发明人： Shichao Ge , Xi Huang , Yi Xu , Charles S. Leung
IPC分类号： H01J29/02 , H01J29/46 , H01J31/12 , G09G1/04 , H01J29/70
CPC分类号： H01J31/126 , H01J29/028 , H01J29/467 , H01J2329/863 , H01J2329/864
摘要： An improved cathodoluminescent device with a one piece spacer structure which is rigidly connected to two sets of grid electrodes. The spacer structure defines holes therein that spatially match pixel dots on an anode on a face plate. One set of grid electrodes comprises layers of electrically conductive material on surfaces within at least some of the holes of the spacer structure. The two sets of grid electrodes and different spacer layers may be attached together to form a one piece spacer structure integral with the two sets of grid electrodes. The display device is then simply assembled by matching each of the holes of the spacer structure with a pixel dot on the face plate, and attaching the structure to the face plate and a back plate.
摘要翻译：一种改进的阴极发光装置，其具有刚性连接到两组栅格电极的单件间隔结构。间隔结构在其中限定孔，其空间上匹配面板上的阳极上的像素点。一组栅格电极在间隔结构的至少一些孔内的表面上包括导电材料层。两组栅格电极和不同的间隔层可以附接在一起以形成与两组栅格电极成一体的一体式隔离结构。然后通过将间隔件结构中的每个孔与面板上的像素点匹配来简单地组装显示装置，并将结构附接到面板和背板。

57. 发明公开

US20240044480A1 NEW HEAT DISSIPATION STRUCTURE FOR SEALED OPTICAL MACHINES 审中-公开
公开(公告)号：US20240044480A1
公开(公告)日：2024-02-08
申请号：US18115815
申请日：2023-03-01
申请人： Yi Xu
发明人： Yi Xu
IPC分类号： F21V29/503 , F21V29/71 , F21V29/67
CPC分类号： F21V29/503 , F21V29/71 , F21V29/67 , G03B21/16
摘要： A new heat dissipation structure for sealed optical machines comprises an optical machine housing, an LED light source, a light cone, a first Fresnel lens, heat insulating glass, a liquid crystal screen, a second Fresnel lens, and a reflector; the upper part of the optical machine housing is installed with a second heat dissipation fan. The invention adopts two independent heat dissipation systems inside and outside, which can greatly increase the heat dissipation performance of the optical machine, and the external heat sink of the external heat dissipation system and the light heat sink share a fan in parallel, simplifying the structure and reducing the cost. The second heat dissipation fan is integrated with the optical machine shell, which effectively reduces the height of the optical machine, reduces the volume of the optical machine, and achieves a better internal circulation, further improving the heat dissipation efficiency.

58. 发明授权

US11343160B1 Device clustering 有权
公开(公告)号：US11343160B1
公开(公告)日：2022-05-24
申请号：US16398426
申请日：2019-04-30
申请人： Zahra Ferdowsi , Michael Cieslak , Michael David Marr , Aysegul Cansizoglu , Xiaolin Shi , Hussein Mehanna , Caleb Ogden , Yi Xu
发明人： Zahra Ferdowsi , Michael Cieslak , Michael David Marr , Aysegul Cansizoglu , Xiaolin Shi , Hussein Mehanna , Caleb Ogden , Yi Xu
IPC分类号： H04L43/55 , H04L67/1087 , H04L67/125 , H04L41/50
摘要： Clustering a plurality of client devices running an application as a function of a data structure such that the plurality of client devices are each assigned a cluster. Client devices having similar performance metrics are assigned the same cluster. An operation of the application is modified as a function of the performance metrics of the client device. The modification of application operation is performed by turning certain features of the application on and off using a rule based on device cluster.

59. 发明申请

US20110099979A1 Composition and Method for Reducing NOx Emissions From Diesel Engines at Minimum Fuel Consumption 失效
标题翻译：降低柴油发动机NOx排放的最小燃料消耗量的组成和方法
公开(公告)号：US20110099979A1
公开(公告)日：2011-05-05
申请号：US12915857
申请日：2010-10-29
申请人： Yi Xu , Leslie R. Wolf
发明人： Yi Xu , Leslie R. Wolf
IPC分类号： F01N3/00 , C10L1/18
CPC分类号： C10L1/026 , C10G2300/301 , C10G2300/307 , C10G2300/405 , C10L1/08 , C10L1/1811 , C10L10/02 , C10L10/12
摘要： A diesel fuel composition is disclosed, as well as a method for reducing NOx emissions from a diesel engine at minimum fuel consumption wherein the diesel engine operates in a low temperature combustion mode, comprising the step of adding to the diesel engine at least one diesel fuel or blending component for a diesel fuel having a combination of a low T50 in the range of from 190° C. to 280° C., a high cetane number in the range of from 31 to 60, and an effective emissions reducing amount of a nitrogen-free cetane improver.
摘要翻译：公开了一种柴油燃料组合物，以及用于以最小燃料消耗量从柴油发动机中减少NOx排放的方法，其中所述柴油发动机在低温燃烧模式下运行，所述方法包括以下步骤：向所述柴油发动机添加至少一种柴油燃料或混合组分，用于具有在190℃至280℃范围内的低T50的组合的柴油燃料，高十六烷值在31至60的范围内，并且有效减少排放量无氮十六烷改良剂。

60. 发明申请

US20100184085A1 Prokaryotic collage-like proteins and uses thereof 审中-公开
标题翻译：原核拼贴样蛋白及其用途
公开(公告)号：US20100184085A1
公开(公告)日：2010-07-22
申请号：US12660596
申请日：2010-03-02
申请人： Magnus Höök , Slawomir Lukomski , Yi Xu
发明人： Magnus Höök , Slawomir Lukomski , Yi Xu
IPC分类号： G01N33/53 , C07K16/00 , C12N15/63 , C12N1/21 , C12P21/06
CPC分类号： C07K14/78
摘要： The present invention provides recombinant triple helical proteins or collagen-like proteins comprising a prokaryotic protein or one or more domains of a prokaryotic protein comprising a collagen-like peptide sequence of repeated Gly-Xaa-Yaa triplets and, optionally, one or more domains from a mammalian collagen. Also provided are expression vectors and host cells containing the expression vectors to produce these recombinant proteins and methods of producing the same. Additionally, antibodies are provided that are directed against a recombinant collagen-like protein that, preferably, binds an integrin. Furthermore, a method of screening for potential therapeutic compounds that inhibit the integrin-binding or integrin-interacting activities of recombinant collagen-like proteins.
摘要翻译：本发明提供重组三螺旋蛋白或胶原样蛋白，其包含原核蛋白或原核蛋白的一个或多个结构域，其包含重复Gly-Xaa-Yaa三联体的胶原样肽序列和任选的一个或多个结构域哺乳动物胶原蛋白。还提供了含有表达载体以产生这些重组蛋白的表达载体和宿主细胞及其生产方法。此外，提供针对重组胶原样蛋白的抗体，其优选结合整联蛋白。此外，筛选抑制重组胶原样蛋白的整联蛋白结合或整联蛋白相互作用活性的潜在治疗化合物的方法。

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