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1. 发明授权

US06705512B2 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding 有权
标题翻译：导电盖层在倒装芯片，芯棒和微金属接合中的应用方法
公开(公告)号：US06705512B2
公开(公告)日：2004-03-16
申请号：US10099283
申请日：2002-03-15
申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K3102
CPC分类号： H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/04953 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
摘要翻译：将接合元件接合到金属接合焊盘的方法包括以下步骤。提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。该层具有上表面。在金属焊盘上形成具有预定厚度的导电盖。接合元件结合到导电盖以与金属接合焊盘形成电连接。

2. 发明授权

US06415973B1 Method of application of copper solution in flip-chip, COB, and micrometal bonding 失效
标题翻译：铜溶液在倒装芯片，COB和微结合中的应用方法
公开(公告)号：US06415973B1
公开(公告)日：2002-07-09
申请号：US09618672
申请日：2000-07-18
申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Mei Sheng Zhou , Yakub Aliyu , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Mei Sheng Zhou , Yakub Aliyu , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K106
CPC分类号： H01L24/85 , B23K1/19 , B23K2101/40 , B23K2103/12 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/48992 , H01L2224/8592 , H01L2224/85948 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad, comprising the following steps. A semiconductor structure having an exposed metal bonding pad within a passivation layer opening is provided. The bonding pad has an upper surface. A bonding element is positioned to contact the bonding pad upper surface. A bonding solution is applied within the passivation layer opening, covering the bonding pad and a portion of the bonding element. The structure is annealed by heating said bonding element to selectively solidify the bonding solution proximate said contact of said bonding element to said bonding pad, bonding the bonding element to the bonding pad.
摘要翻译：一种将接合元件接合到金属接合焊盘的方法，包括以下步骤。提供了在钝化层开口内具有暴露的金属焊盘的半导体结构。接合垫具有上表面。定位接合元件以接合焊盘上表面。在钝化层开口内施加粘合溶液，覆盖粘结垫和粘合元件的一部分。通过加热所述结合元件来对所述结构进行退火，以选择性地将所述接合元件的所述接触附近的接合溶液固化到所述接合焊盘，将所述接合元件接合到所述接合焊盘。

3. 发明授权

US06350675B1 Integration of silicon-rich material in the self-aligned via approach of dual damascene interconnects 失效
标题翻译：将富硅材料集成在双镶嵌互连的自对准通孔中
公开(公告)号：US06350675B1
公开(公告)日：2002-02-26
申请号：US09686282
申请日：2000-10-12
申请人： Simon Chooi , Mei-Sheng Zhou , Subhash Gupta , Yi Xu
发明人： Simon Chooi , Mei-Sheng Zhou , Subhash Gupta , Yi Xu
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/7681 , H01L21/76825 , H01L21/76826
摘要： This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically, in the formation of self-aligned dual damascene interconnects and vias, which incorporates low dielectric constant intermetal dielectrics (IMD) and utilizes silylated top surface imaging (TSI) photoresist, with a single or multi-step selective reactive ion etch (RIE) process, to form trench/via opening. The invention incorporates the use of a silylated top surface imaging (TSI) resist etch barrier layer to form the via pattern, in the first level of a dual damascene process. Two variations of using the top surface imaging (TSI) resist, with and without leaving an exposed region in place, are described in the first and second embodiment of the invention, and in addition, a thin dielectric layer is made use of just below the resist layer. Provided adhesion between the top surface imaging (TSI) photoresist and the low dielectric constant intermetal dielectric (IMD) is good, the thin dielectric layer described above can be omitted, yielding the third and fourth embodiment of the invention. Special attention in the process is given to protecting the integrity of the low dielectric constant intermetal dielectric (ILD) material, selected from the group consisting of organic based or carbon doped silicon dioxide.
摘要翻译：本发明涉及用于半导体集成电路器件的制造方法，更具体地说，涉及形成自对准的双镶嵌互连和通孔，其结合了低介电常数金属间电介质（IMD）并利用甲硅烷基化的顶表面成像（TSI ）光致抗蚀剂，具有单步或多步选择性反应离子蚀刻（RIE）工艺，以形成沟槽/通孔。本发明包括在双镶嵌工艺的第一水平中使用甲硅烷基化的顶表面成像（TSI）抗蚀剂蚀刻阻挡层以形成通孔图案。在本发明的第一和第二实施例中描述了使用顶表面成像（TSI）抗蚀剂的两种变型，其具有和不具有将暴露区域保持在适当位置，此外，使用刚好低于抗蚀剂层。提供顶表面成像（TSI）光致抗蚀剂和低介电常数金属间电介质（IMD）之间的粘附性是好的，可以省略上述薄介电层，产生本发明的第三和第四实施例。该方法中特别注意保护低介电常数金属间电介质（ILD）材料的完整性，该材料选自有机基或掺碳二氧化硅。

4. 发明授权

US07452808B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 失效
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US07452808B2
公开(公告)日：2008-11-18
申请号：US10988768
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

5. 发明授权

US06967162B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
公开(公告)号：US06967162B2
公开(公告)日：2005-11-22
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

6. 发明授权

US06683002B1 Method to create a copper diffusion deterrent interface 失效
公开(公告)号：US06683002B1
公开(公告)日：2004-01-27
申请号：US09636580
申请日：2000-08-10
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/76844 , H01L21/28556 , H01L21/31111 , H01L21/314 , H01L21/76807
摘要： Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.

7. 发明授权

US06417088B1 Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding 有权
标题翻译：应用位移反应形成倒装芯片，COB和微金属接合的导电盖层的方法
公开(公告)号：US06417088B1
公开(公告)日：2002-07-09
申请号：US09624019
申请日：2000-07-24
申请人： Kwok Keung Paul Ho , Yi Xu , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Yi Xu , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： H01L2144
CPC分类号： H01L24/48 , H01L21/288 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05147 , H01L2224/05644 , H01L2224/13099 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/48699 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/48744
摘要： A method of forming a conductive cap layer over a metal bonding pad comprises the following steps. A semiconductor structure is provided having an exposed, recessed metal bonding pad within a layer opening. The layer has an upper surface. The exposed metal bonding pad is treated with a solution containing soluble metal ions to form a conductive cap over the metal bonding pad. The conductive cap layer is comprised of the solution metal and has a predetermined thickness. An external bonding element may then be bonded to the conductive cap, forming an electrical connection with the metal bonding pad.
摘要翻译：在金属焊盘上形成导电盖层的方法包括以下步骤。提供了一种半导体结构，其在层开口内具有暴露的凹陷的金属接合焊盘。该层具有上表面。暴露的金属焊盘用含有可溶性金属离子的溶液处理，以在金属焊盘上形成导电盖。导电盖层由溶液金属构成并具有预定的厚度。然后可以将外部接合元件接合到导电盖，与金属接合焊盘形成电连接。

8. 发明授权

US06391783B1 Method to thin down copper barriers in deep submicron geometries by using alkaline earth element, barrier additives, or self assembly technique 有权
标题翻译：通过使用碱土元素，阻隔添加剂或自组装技术在深亚微米几何图形中减薄铜屏障的方法
公开(公告)号：US06391783B1
公开(公告)日：2002-05-21
申请号：US09615811
申请日：2000-07-13
申请人： John Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： John Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L2131
CPC分类号： H01L21/76844 , H01L21/288 , H01L21/76867
摘要： A method of forming a metal plug, comprising the following steps. An etched dielectric layer, over a conductive layer, over a semiconductor structure are provided. The etched dielectric layer having a via hole and an exposed periphery. The etched dielectric layer is treated with at least one alkaline earth element source to form an in-situ metal barrier layer within the dielectric layer exposed periphery. A metal plug is formed within the via hole wherein the in-situ metal barrier layer prevents diffusion of the metal from the metal plug into the dielectric oxide layer.
摘要翻译：一种形成金属塞的方法，包括以下步骤。提供了在半导体结构之上的导电层上的蚀刻介电层。蚀刻的介电层具有通孔和暴露的周边。蚀刻的电介质层用至少一个碱土元素源处理，以在电介质层外露的外围形成原位金属阻挡层。在通孔内形成金属塞，其中原位金属阻挡层防止金属从金属塞扩散到电介质氧化物层中。

9. 发明授权

US06378759B1 Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding 有权
标题翻译：导电盖层在倒装芯片，COB和微金属接合中的应用方法
公开(公告)号：US06378759B1
公开(公告)日：2002-04-30
申请号：US09618261
申请日：2000-07-18
申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
发明人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
IPC分类号： B23K3102
CPC分类号： H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05624 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/04953 , H01L2224/78 , H01L2924/00
摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
摘要翻译：将接合元件接合到金属接合焊盘的方法包括以下步骤。提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。该层具有上表面。在金属焊盘上形成具有预定厚度的导电盖。接合元件结合到导电盖以与金属接合焊盘形成电连接。

10. 发明授权

US06350689B1 Method to remove copper contamination by using downstream oxygen and chelating agent plasma 失效
标题翻译：使用下游氧和螯合剂等离子体去除铜污染的方法
公开(公告)号：US06350689B1
公开(公告)日：2002-02-26
申请号：US09839962
申请日：2001-04-23
申请人： Paul Ho , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Yi Xu
发明人： Paul Ho , Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02074 , H01L21/02046 , H01L21/0209 , H01L21/32136 , Y10S438/906
摘要： A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.
摘要翻译：一种从半导体晶片去除铜污染的方法，包括以下步骤。提供其上具有铜污染的半导体晶片。从第一来源提供含有下游等离子体的氧化基团（或者可以在氧化剂上使用卤素（F2，Cl2或Br2））。从第二来源提供蒸发的螯合剂。将含有下游等离子体和气化螯合剂的氧化基团混合以形成含有下游等离子体/汽化螯合剂混合物的氧化基团。混合物被引导到铜污染物，使得混合物与铜污染物反应形成挥发性产物。从晶片附近去除挥发性产物。

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