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51. 发明申请

US20090162960A1 Method for manufacturing high efficiency light-emitting diodes 有权
标题翻译：制造高效率发光二极管的方法
公开(公告)号：US20090162960A1
公开(公告)日：2009-06-25
申请号：US12379561
申请日：2009-02-25
申请人： Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
发明人： Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
IPC分类号： H01L21/78 , H01L21/77
CPC分类号： H01L33/0095
摘要： A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.
摘要翻译：一种发光装置的制造方法，其特征在于，包括以下步骤：用激光束切割发光单元，用酸溶液清洗发光单元，除去激光切割产生的副产物。

52. 发明申请

US20080190479A1 Optoelectronical semiconductor device 有权
标题翻译：光电半导体器件
公开(公告)号：US20080190479A1
公开(公告)日：2008-08-14
申请号：US12068887
申请日：2008-02-13
申请人： Min-Hsun Hsieh , Pai-Hsiang Wang
发明人： Min-Hsun Hsieh , Pai-Hsiang Wang
IPC分类号： H01L31/042 , H01L31/052 , H01L33/00
CPC分类号： H01L31/0725 , H01L25/0756 , H01L31/0687 , H01L31/076 , H01L33/0079 , H01L33/08 , H01L2924/0002 , Y02E10/544 , Y02E10/548 , H01L2924/00
摘要： An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed in-between.
摘要翻译：具有接合结构的光电子半导体器件包括第一光电子结构，第二光电结构和在其间形成的透明结合结构。

53. 发明申请

US20060126343A1 LED light source 有权
标题翻译： LED光源
公开(公告)号：US20060126343A1
公开(公告)日：2006-06-15
申请号：US11302732
申请日：2005-12-13
申请人： Min-Hsun Hsieh , Chou-Chih Yin , Chia-Liang Hsu , Jen-Shui Wang , Chia-Fen Tsai , Chien-Yuan Wang
发明人： Min-Hsun Hsieh , Chou-Chih Yin , Chia-Liang Hsu , Jen-Shui Wang , Chia-Fen Tsai , Chien-Yuan Wang
IPC分类号： F21V5/00
CPC分类号： F21K9/61 , F21K9/00 , F21Y2115/10
摘要： A tube type light emitting diode light source including a light source generator, a light guide and a diffuser is provided. The light source generator includes LEDs arranging in a line. The light guide has a grooved light incident surface and a grooved light-guiding surface. The grooved light incident surface encompasses the LEDs, and the grooved light-guiding surface is adapted for changing the propagating direction of an incident light. The diffuser covers the light guide.
摘要翻译：提供了包括光源发生器，光导和扩散器的管式发光二极管光源。光源发生器包括排列成一行的LED。光导具有凹槽的光入射表面和带槽的光导表面。带槽的光入射表面包围LED，并且带槽的光导表面适于改变入射光的传播方向。扩散器覆盖光导。

54. 发明申请

US20060076571A1 Semiconductor light-emitting element assembly 有权
标题翻译：半导体发光元件组件
公开(公告)号：US20060076571A1
公开(公告)日：2006-04-13
申请号：US11222803
申请日：2005-09-12
申请人： Min-Hsun Hsieh , Chou-Chih Yin , Chien-Yuan Wang , Jen-Shui Wang , Chia-Fen Tsai , Chia-Liang Hsu
发明人： Min-Hsun Hsieh , Chou-Chih Yin , Chien-Yuan Wang , Jen-Shui Wang , Chia-Fen Tsai , Chia-Liang Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L33/486 , H01L33/54 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor light-emitting element assembly, comprising a composite substrate, a circuit layout carrier, a connecting structure, a recess, and a semiconductor light-emitting element, is disclosed. The connecting structure is used for bonding the composite substrate with the circuit layout carrier. The recess is formed by the circuit layout carrier and extends toward the composite substrate. The semiconductor light-emitting element is deposited in the recess and electrically connected to the circuit layout carrier.
摘要翻译：公开了一种半导体发光元件组件，包括复合衬底，电路布局载体，连接结构，凹部和半导体发光元件。连接结构用于将复合基板与电路布线载体接合。凹部由电路布局载体形成并朝向复合基板延伸。半导体发光元件沉积在凹槽中并电连接到电路布局载体。

55. 发明申请

US20060006524A1 LIGHT EMITTING DIODE HAVING AN ADHESIVE LAYER FORMED WITH HEAT PATHS 审中-公开
标题翻译：具有热板形成粘合层的发光二极管
公开(公告)号：US20060006524A1
公开(公告)日：2006-01-12
申请号：US11160589
申请日：2005-06-29
申请人： Min-Hsun Hsieh
发明人： Min-Hsun Hsieh
IPC分类号： H01L23/10
CPC分类号： H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： The present invention is related to a light emitting diode having an adhesive layer provided with heat paths. In the present invention, an adhesive layer is formed to bond the substrate and the LED stack. There are a plurality of metal protrusions or semiconductor protrusions passing through the adhesive layer to form heat-dissipation paths to improve the heat-dissipation effect of the LED so as to enhance the stability and the light-emitting efficiency of the LED.
摘要翻译：本发明涉及具有设置有热路的粘合剂层的发光二极管。在本发明中，形成粘合层以将基板和LED叠层结合。通过粘合层有多个金属突起或半导体突起，以形成散热路径，以提高LED的散热效果，从而提高LED的稳定性和发光效率。

56. 发明授权

US06972208B2 Method for manufacturing a light emitting diode having a transparent substrate 有权
标题翻译：一种具有透明基板的发光二极管的制造方法
公开(公告)号：US06972208B2
公开(公告)日：2005-12-06
申请号：US10709663
申请日：2004-05-21
申请人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
发明人： Min-Hsun Hsieh , Keun-Ru Chuang , Shane-Shyan Wey , Chih-Chiang Lu , Ming-Jiunn Jou , Shu-Wen Sung , Chia-Cheng Liu , Chao-Nien Huang
IPC分类号： H01L21/00 , H01L21/20 , H01L21/8238 , H01L33/00 , H01L33/30 , H01L33/32
CPC分类号： H01L33/16 , H01L21/2007 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/32 , H01L33/42
摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
摘要翻译：一种具有透明基板的发光二极管及其制造方法。发光二极管通过产生两个半导体多层并结合而形成。第一半导体多层形成在非透明基板上。通过在透明基板上形成非晶界面层来形成第二半导体多层。将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。

57. 发明申请

US20050184297A1 ORGANIC ADHESIVE LIGHT-EMITTING DEVICE WITH A VERTICAL STRUCTURE 有权
标题翻译：具有垂直结构的有机粘合剂发光装置
公开(公告)号：US20050184297A1
公开(公告)日：2005-08-25
申请号：US10905466
申请日：2005-01-05
申请人： Min-Hsun Hsieh
发明人： Min-Hsun Hsieh
IPC分类号： H01L27/15 , H01L33/10 , H01L33/22 , H01L33/32 , H05B33/00
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/405
摘要： An organic adhesive light-emitting device with a vertical structure is provided. The organic adhesive light-emitting device comprises a conductive substrate with a concavo-convex upper surface; a first metal layer formed on the concavo-convex upper surface of the conductive substrate; an organic adhesive material formed over the first metal layer; a second metal layer formed over the organic adhesive material, wherein all or part of the first metal layer over the concavo-convex upper surface is in ohmic contact with the second metal layer through the organic adhesive material; a reflective layer formed over the second metal layer; and a light-emitting stack layer formed over the second metal layer. The process for manufacturing the present invention organic adhesive light-emitting device is less complex than that for manufacturing prior art diodes.
摘要翻译：提供具有垂直结构的有机粘合剂发光装置。有机粘合发光装置包括具有凹凸上表面的导电基板; 形成在所述导电性基板的所述凹凸上表面上的第一金属层; 形成在所述第一金属层上的有机粘合材料; 形成在所述有机粘合材料上的第二金属层，其中在所述凹凸上表面上的所述第一金属层的全部或部分与所述第二金属层通过所述有机粘合材料欧姆接触; 形成在所述第二金属层上的反射层; 以及形成在第二金属层上的发光层叠层。本发明的有机粘合剂发光装置的制造方法比现有技术的二极管制造方法复杂。

58. 发明授权

US08853722B2 Semiconductor light-emitting device and method for forming the same 有权
标题翻译：半导体发光器件及其形成方法
公开(公告)号：US08853722B2
公开(公告)日：2014-10-07
申请号：US13045202
申请日：2011-03-10
申请人： Min-Hsun Hsieh , Chia-Fen Tsai
发明人： Min-Hsun Hsieh , Chia-Fen Tsai
IPC分类号： H01L33/50 , H01L33/40 , H01L33/46 , H01L33/00 , H01L33/42
CPC分类号： H01L33/005 , H01L33/0079 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/505 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041
摘要： A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.
摘要翻译：半导体发光器件包括不透光衬底，接合结构，半导体发光叠层和覆盖半导体发光叠层的荧光材料结构。半导体发光堆叠与生长衬底分离，并通过接合结构结合到不透光衬底上。一种半导体发光装置的制造方法，其特征在于，将半导体发光叠层与生长基板分离，将所述半导体发光叠层结合到不透光性基板上，在所述半导体发光层叠体上形成荧光体结构体。

59. 发明授权

US08530927B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08530927B2
公开(公告)日：2013-09-10
申请号：US13608750
申请日：2012-09-10
申请人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.
摘要翻译：发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分发射并具有第一宽度和大于所述第一宽度的第一长度的第一分支的延伸部分和从所述第一分支延伸并具有大于所述第一宽度的第二宽度的第二分支，以及大于第二宽度的第二长度; 以及第二分支和半导体发光叠层之间的电接触结构。

60. 发明授权

US08519430B2 Optoelectronic device and method for manufacturing the same 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08519430B2
公开(公告)日：2013-08-27
申请号：US13225117
申请日：2011-09-02
申请人： Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人： Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要： An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译：光电子器件包括衬底和形成在衬底上的第一过渡堆叠，其包括至少形成在衬底上的第一过渡层，并且具有形成在第一过渡层内部的至少一个中空部件，以及第二过渡层，其中第二过渡层是形成在第一过渡层上的无意掺杂层或未掺杂层。

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