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1. 发明授权

US08530927B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08530927B2
公开(公告)日：2013-09-10
申请号：US13608750
申请日：2012-09-10
申请人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.
摘要翻译：发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分发射并具有第一宽度和大于所述第一宽度的第一长度的第一分支的延伸部分和从所述第一分支延伸并具有大于所述第一宽度的第二宽度的第二分支，以及大于第二宽度的第二长度; 以及第二分支和半导体发光叠层之间的电接触结构。

2. 发明申请

US20110108879A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110108879A1
公开(公告)日：2011-05-12
申请号：US13009491
申请日：2011-01-19
申请人： Chien-Fu HUANG , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人： Chien-Fu HUANG , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号： H01L33/22
CPC分类号： H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译：一种发光器件，包括半导体发光堆叠，包括发光区域; 形成在所述半导体发光叠层上的电极，其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。

3. 发明授权

US08263998B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08263998B2
公开(公告)日：2012-09-11
申请号：US13009491
申请日：2011-01-19
申请人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号： H01L33/22
CPC分类号： H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译：一种发光器件，包括半导体发光堆叠，包括发光区域; 形成在所述半导体发光叠层上的电极，其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。

4. 发明授权

US07906795B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07906795B2
公开(公告)日：2011-03-15
申请号：US12437908
申请日：2009-05-08
申请人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
发明人： Chien-Fu Huang , Min-Hsun Hsieh , Chih-Chiang Lu , Chia-Liang Hsu , Shih-I Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.
摘要翻译：一种发光器件，包括半导体发光堆叠，包括发光区域; 形成在所述半导体发光叠层上的电极，其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。

5. 发明授权

US08882290B2 Light-mixing type light-emitting apparatus 有权
标题翻译：光混合型发光装置
公开(公告)号：US08882290B2
公开(公告)日：2014-11-11
申请号：US11798521
申请日：2007-05-15
申请人： Min-Hsun Hsieh , Chia-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
发明人： Min-Hsun Hsieh , Chia-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
IPC分类号： F21K2/00 , H01L25/075 , F21K99/00
CPC分类号： H01L25/0753 , F21K9/00 , F21K9/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要翻译：光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

6. 发明授权

US08110845B2 Light-emitting device containing a composite electroplated substrate 有权
标题翻译：含有复合电镀基板的发光装置
公开(公告)号：US08110845B2
公开(公告)日：2012-02-07
申请号：US13181222
申请日：2011-07-12
申请人： Chia-Liang Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Fu Huang
发明人： Chia-Liang Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Fu Huang
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/46
摘要： The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.
摘要翻译：该应用涉及通过复合电镀形成发光二极管的基板的方法。本发明示出了包括以下元件的发光二极管：发光外延结构，设置在发光外延结构上的反射层，设置在反射层上的种子层，设置在种子层上的复合电镀基板通过复合电镀，以及设置在复合电镀基板上的保护层。

7. 发明申请

US20100163907A1 CHIP LEVEL PACKAGE OF LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管芯片级封装
公开(公告)号：US20100163907A1
公开(公告)日：2010-07-01
申请号：US12648911
申请日：2009-12-29
申请人： Chia-Liang HSU , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
发明人： Chia-Liang HSU , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/385 , H01L33/62 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.
摘要翻译：本申请公开了一种发光二极管芯片级封装结构，包括：具有第一表面和第二表面的永久基板; 第一表面上的第一电极; 在第二表面上的第二电极; 在永久性基板的第一表面未被第一电极覆盖的粘合剂层上; 粘合剂层上的生长衬底; 生长衬底上的图案化半导体结构; 图案化半导体结构上的第三电极和第四电极，并与图案化的半导体结构电连接; 所述图案化半导体结构的侧壁上的电连接结构将所述第三电极和所述第四电极与所述第一电极电连接; 以及位于图案化半导体结构的侧壁上以及用于使图案化半导体结构电绝缘的电连接结构之间的绝缘层。

8. 发明授权

US08344412B2 Chip level package of light-emitting diode 有权
标题翻译：芯片级封装的发光二极管
公开(公告)号：US08344412B2
公开(公告)日：2013-01-01
申请号：US12648911
申请日：2009-12-29
申请人： Chia-Liang Hsu , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
发明人： Chia-Liang Hsu , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/62 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.
摘要翻译：本申请公开了一种发光二极管芯片级封装结构，包括：具有第一表面和第二表面的永久基板; 第一表面上的第一电极; 在第二表面上的第二电极; 在永久性基板的第一表面未被第一电极覆盖的粘合剂层上; 粘合剂层上的生长衬底; 生长衬底上的图案化半导体结构; 图案化半导体结构上的第三电极和第四电极，并与图案化的半导体结构电连接; 所述图案化半导体结构的侧壁上的电连接结构将所述第三电极和所述第四电极与所述第一电极电连接; 以及位于图案化半导体结构的侧壁上以及用于使图案化半导体结构电绝缘的电连接结构之间的绝缘层。

9. 发明申请

US20070263384A1 Light-mixing type light-emitting apparatus 有权
标题翻译：光混合型发光装置
公开(公告)号：US20070263384A1
公开(公告)日：2007-11-15
申请号：US11798521
申请日：2007-05-15
申请人： Min-Hsun Hsieh , Chai-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
发明人： Min-Hsun Hsieh , Chai-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
IPC分类号： F21V9/00
CPC分类号： H01L25/0753 , F21K9/00 , F21K9/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要翻译：光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

10. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

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