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51. 发明授权

US6028326A Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film 失效
标题翻译：薄膜晶体管包括用于促进半导体膜结晶的催化元件
公开(公告)号：US6028326A
公开(公告)日：2000-02-22
申请号：US881257
申请日：1997-06-24
申请人： Hideki Uochi , Yasuhiko Takemura
发明人： Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L21/265 , H01L21/20 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/76 , H01L31/036 , H01L31/112 , H01L31/0376
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78621 , H01L27/1277
摘要： A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating crystallization at a concentration of 1.times.10.sup.15 cm.sup.-3 or more but less than 2.times.10.sup.19 cm.sup.-3 to the impurity region in an amorphous silicon film, crystallizing the amorphous film thereafter, and after forming gate electrode and gate insulating film, implanting an impurity in a self-aligned manner to establish an LDD structure.
摘要翻译：一种具有LDD（轻掺杂漏极）结构的晶体硅薄膜晶体管及其制造方法，其特征在于，将1×10 15 cm -3以上且小于2×10 19 cm -3的浓度促进结晶的催化剂元件引入到非晶硅膜中的杂质区域，然后使非晶膜结晶，并且在形成栅电极和栅绝缘膜之后，以自对准的方式注入杂质以建立LDD结构。

52. 发明授权

US5569936A Semiconductor device employing crystallization catalyst 失效
标题翻译：采用结晶催化剂的半导体装置
公开(公告)号：US5569936A
公开(公告)日：1996-10-29
申请号：US207124
申请日：1994-03-08
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/786 , H01L29/76 , H01L29/04 , H01L31/036 , H01L27/01
CPC分类号： H01L27/1251 , H01L21/2022 , H01L21/8238 , H01L27/0922 , H01L27/1237 , H01L27/1277 , H01L29/66757 , H01L29/78618 , H01L29/78675 , G02F1/13454 , Y10S148/016
摘要： A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.
摘要翻译：形成含有催化剂元素的物质，以与非晶硅膜紧密接触，或将催化剂元素引入到非晶硅膜中。非晶硅膜在比通常的非晶硅的结晶温度低的温度下退火，从而选择性地使非晶硅膜结晶。结晶区域用作可用于有源矩阵电路的外围驱动电路的晶体硅TFT。保持非晶形的区域用作可用于像素电路中的非晶硅TFT。在非晶硅膜中添加相对少量的促进结晶的催化剂元素，并且在比基板的变形温度低的温度下进行退火处理，从而使非晶硅膜结晶。然后形成栅极绝缘膜和栅电极，并以自对准的方式注入杂质。含有促进结晶的催化剂元素的膜与杂质区紧密接触，或者通过离子注入等将相对大量的催化剂元素引入杂质区。然后，在比基板的变形温度低的温度下进行退火处理，从而激活掺杂杂质。

53. 发明授权

US5563426A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US5563426A
公开(公告)日：1996-10-08
申请号：US341106
申请日：1994-11-18
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/76 , H01L27/108 , H01L29/04
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/1277 , G09G2300/0408
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

54. 发明授权

US5426064A Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5426064A
公开(公告)日：1995-06-20
申请号：US207126
申请日：1994-03-08
申请人： Hognyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura
发明人： Hognyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/265
CPC分类号： H01L29/66757 , H01L21/84 , Y10S148/016 , Y10S148/06 , Y10S148/15
摘要： Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200.ANG., thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.
摘要翻译：制造半导体器件（例如薄膜晶体管）的方法，其具有改进的特性和可靠性。该方法是在衬底上形成薄的非晶硅膜开始的。包含镍，铁，钴和铂中的至少一种的金属化层选择性地形成在非晶硅膜上或下方，以与硅膜紧密接触，或者将这些金属元素添加到非晶硅膜中。将非晶硅膜热退火以使其结晶。将得到的结晶硅膜的表面蚀刻到20〜200的深度，由此产生干净的表面。通过CVD或物理气相沉积在清洁表面上形成绝缘膜。在绝缘膜上形成栅电极。

55. 发明授权

US5403772A Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5403772A
公开(公告)日：1995-04-04
申请号：US160908
申请日：1993-12-03
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/2022 , H01L27/1277 , G09G2300/0408
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜的上方或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下退火进行其结晶化。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

56. 发明申请

US20120068266A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068266A1
公开(公告)日：2012-03-22
申请号：US13282515
申请日：2011-10-27
申请人： Hongyong ZHANG , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong ZHANG , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L27/12
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。在具有薄膜晶体管的动态电路中同时获得具有低漏电流和高迁移率的晶体管，在半导体层上选择性地形成覆盖膜，半导体层将成为晶体管的有源层，并且之后将其热结晶。

57. 发明授权

US07635895B2 Display device 失效
标题翻译：显示设备
公开(公告)号：US07635895B2
公开(公告)日：2009-12-22
申请号：US11647179
申请日：2006-12-29
申请人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
发明人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
IPC分类号： H01L27/12
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.
摘要翻译：提供了一种方法，通过该方法可以容易地形成轻掺杂漏极（LDD）区域，并且在具有覆盖有氧化物覆盖层的栅电极的薄膜晶体管中的源/漏区域中以良好的产率形成。通过以栅极电极作为掩模，以自对准的方式将杂质引入岛状硅膜中形成轻掺杂漏极（LDD）区域。首先，通过使用旋转 - 倾斜离子注入在岛状硅膜中形成低浓度杂质区，以相对于衬底从倾斜方向进行离子掺杂。此时也在栅电极下方形成低浓度杂质区。之后，将高浓度的杂质通常引入衬底，从而形成高浓度杂质区域。在上述过程中，低浓度杂质区域保留在栅电极下方并构成轻掺杂漏区。

58. 发明授权

US07381599B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07381599B2
公开(公告)日：2008-06-03
申请号：US11064821
申请日：2005-02-25
申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
发明人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L21/336
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译：形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。此后，进行一个导电性元素的离子掺杂。高电阻率区域限定在栅极绝缘膜下。

59. 发明授权

US06323071B1 Method for forming a semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US06323071B1
公开(公告)日：2001-11-27
申请号：US09233146
申请日：1999-01-19
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

60. 发明授权

US5580800A Method of patterning aluminum containing group IIIb Element 失效
标题翻译：构成含IIIb族元素的铝的方法
公开(公告)号：US5580800A
公开(公告)日：1996-12-03
申请号：US213060
申请日：1994-03-15
申请人： Hongyong Zhang , Yasuhiko Takemura , Hideki Uochi , Itaru Koyama , Minoru Miyazaki , Akane Murakami , Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
发明人： Hongyong Zhang , Yasuhiko Takemura , Hideki Uochi , Itaru Koyama , Minoru Miyazaki , Akane Murakami , Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
IPC分类号： H01L21/02 , H01L21/28 , H01L21/3213 , H01L21/336 , H01L29/49 , H01L21/306
CPC分类号： H01L21/02071 , H01L21/28079 , H01L21/32134 , H01L29/4908 , H01L29/66757 , Y10S148/051
摘要： A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.
摘要翻译：根据本发明的薄膜晶体管具有包括高纯度超过99.5％的低铝层的下电极和含有超过0.5％硅的上层铝的栅电极。或者，其具有通过将IIIa族元素添加到IIIb族元素而制成的栅电极。通过蚀刻含硅铝栅电极产生的残留物用氢氟酸，硝酸和乙酸的混合溶液进行蚀刻。在层间绝缘膜中形成接触孔之后，进行激光退火，此后在接触孔中形成金属电极。

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