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1. 发明授权

US5569936A Semiconductor device employing crystallization catalyst 失效
标题翻译：采用结晶催化剂的半导体装置
公开(公告)号：US5569936A
公开(公告)日：1996-10-29
申请号：US207124
申请日：1994-03-08
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/786 , H01L29/76 , H01L29/04 , H01L31/036 , H01L27/01
CPC分类号： H01L27/1251 , H01L21/2022 , H01L21/8238 , H01L27/0922 , H01L27/1237 , H01L27/1277 , H01L29/66757 , H01L29/78618 , H01L29/78675 , G02F1/13454 , Y10S148/016
摘要： A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.
摘要翻译：形成含有催化剂元素的物质，以与非晶硅膜紧密接触，或将催化剂元素引入到非晶硅膜中。非晶硅膜在比通常的非晶硅的结晶温度低的温度下退火，从而选择性地使非晶硅膜结晶。结晶区域用作可用于有源矩阵电路的外围驱动电路的晶体硅TFT。保持非晶形的区域用作可用于像素电路中的非晶硅TFT。在非晶硅膜中添加相对少量的促进结晶的催化剂元素，并且在比基板的变形温度低的温度下进行退火处理，从而使非晶硅膜结晶。然后形成栅极绝缘膜和栅电极，并以自对准的方式注入杂质。含有促进结晶的催化剂元素的膜与杂质区紧密接触，或者通过离子注入等将相对大量的催化剂元素引入杂质区。然后，在比基板的变形温度低的温度下进行退火处理，从而激活掺杂杂质。

2. 发明授权

US5595923A Method of forming a thin film transistor 失效
标题翻译：形成薄膜晶体管的方法
公开(公告)号：US5595923A
公开(公告)日：1997-01-21
申请号：US467986
申请日：1995-06-06
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Yasuhiko Takemura , Mutsuo Yamamoto
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L27/1251 , H01L21/2022 , H01L21/8238 , H01L27/0922 , H01L27/1237 , H01L27/1277 , H01L29/66757 , H01L29/78618 , H01L29/78675 , G02F1/13454 , Y10S148/016
摘要： A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.
摘要翻译：形成含有催化剂元素的物质，以与非晶硅膜紧密接触，或将催化剂元素引入到非晶硅膜中。非晶硅膜在比通常的非晶硅的结晶温度低的温度下退火，从而选择性地使非晶硅膜结晶。结晶区域用作可用于有源矩阵电路的外围驱动电路的晶体硅TFT。保持非晶形的区域用作可用于像素电路中的非晶硅TFT。在非晶硅膜中添加相对少量的促进结晶的催化剂元素，并且在比基板的变形温度低的温度下进行退火处理，从而使非晶硅膜结晶。然后形成栅极绝缘膜和栅电极，并以自对准的方式注入杂质。含有促进结晶的催化剂元素的膜与杂质区紧密接触，或者通过离子注入等将相对大量的催化剂元素引入杂质区。然后，在比基板的变形温度低的温度下进行退火处理，从而激活掺杂杂质。

3. 发明申请

US20050020006A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050020006A1
公开(公告)日：2005-01-27
申请号：US10926059
申请日：2004-08-26
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/469
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

4. 发明申请

US20120068266A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068266A1
公开(公告)日：2012-03-22
申请号：US13282515
申请日：2011-10-27
申请人： Hongyong ZHANG , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong ZHANG , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L27/12
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。在具有薄膜晶体管的动态电路中同时获得具有低漏电流和高迁移率的晶体管，在半导体层上选择性地形成覆盖膜，半导体层将成为晶体管的有源层，并且之后将其热结晶。

5. 发明授权

US06323071B1 Method for forming a semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US06323071B1
公开(公告)日：2001-11-27
申请号：US09233146
申请日：1999-01-19
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

6. 发明授权

US6110770A Semiconductor and process for fabricating the same 有权
标题翻译：半导体及其制造方法
公开(公告)号：US6110770A
公开(公告)日：2000-08-29
申请号：US229306
申请日：1999-01-13
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/00 , H01L21/324 , H01L21/336 , H01L27/12 , H01L29/02 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： H01L21/2022 , H01L27/1281 , H01L29/66757
摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150.degree. C.
摘要翻译：一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。

7. 发明授权

US5956579A Semiconductor, semiconductor device, and method for fabricating the same 失效
公开(公告)号：US5956579A
公开(公告)日：1999-09-21
申请号：US893361
申请日：1997-07-15
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
IPC分类号： H01L29/78 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L29/66757 , H01L29/78618
摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

8. 发明授权

US08062935B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08062935B2
公开(公告)日：2011-11-22
申请号：US12579642
申请日：2009-10-15
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过选择性地形成覆盖膜来形成具有薄膜晶体管的动态电路，同时获得漏电流低的晶体管和迁移率高的晶体管，即将成为有源层的半导体层晶体管，然后通过其热结晶。

9. 发明授权

US06997985B1 Semiconductor, semiconductor device, and method for fabricating the same 失效
标题翻译：半导体，半导体器件及其制造方法
公开(公告)号：US06997985B1
公开(公告)日：2006-02-14
申请号：US08768535
申请日：1996-12-18
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
IPC分类号： C30B1/06
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L27/1277 , H01L29/66757 , H01L29/78618 , H01L29/78696
摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.
摘要翻译：通过在低于非晶硅的正常结晶温度或低于基板的玻璃化转变点的温度下退火基本上非晶硅膜以使硅膜结晶的方法来制造诸如薄膜晶体管的半导体器件。镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍，铁，钴和铂用作结晶的起始原料。这些材料形成在非晶硅膜上或下方。

10. 发明授权

US06806125B2 Method of manufacturing a thin film transistor device 失效
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US06806125B2
公开(公告)日：2004-10-19
申请号：US09993492
申请日：2001-11-27
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

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