会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明申请
    • Vaporizer and semiconductor processing system
    • 汽化器和半导体加工系统
    • US20080245306A1
    • 2008-10-09
    • US12076765
    • 2008-03-21
    • Ken NakaoHitoshi KatoTsuneyuki OkabeShigeyuki Okura
    • Ken NakaoHitoshi KatoTsuneyuki OkabeShigeyuki Okura
    • C23C16/00
    • C23C16/4486
    • A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.
    • 用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。 雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间,并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间 块。 内部加热器设置在热交换下部块的内部空间中,并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。 内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。
    • 58. 发明授权
    • Heat-treating boat for semiconductor wafers
    • 用于半导体晶圆的热处理船
    • US6062853A
    • 2000-05-16
    • US125796
    • 1998-08-31
    • Tomohisa ShimazuKen Nakao
    • Tomohisa ShimazuKen Nakao
    • H01L21/67H01L21/673F27D5/00
    • H01L21/67309H01L21/6875H01L21/67115
    • An heat-treating ring boat (20) for semiconductor wafers (W) has a top plate (21), a bottom plate (22), six columns (23-28), and 63 ring trays (31). The trays (31) are mounted in grooves (20a) of the columns (23-28). To fix the trays (31), a fixing rod (33) is detachably mounted between the top plate (21) and bottom plate (22). A through hole (21a) and a recessed portion (22a) to mount the fixing rod (33) therein are formed in the top plate (21) and bottom plate (22). Notches (34) to engage with the fixing rod (33) are formed in the trays (31). A notch (32) to engage with the fixing rod (33) is formed in the column (23). A projection (41) is formed on each tray (31) to abut against the side surface of the column (24).
    • PCT No.PCT / JP97 / 00526 Sec。 371日期1998年8月31日 102(e)日期1998年8月31日PCT 1997年2月25日PCT公布。 公开号WO97 / 32339 日期1997年9月4日,半导体晶片(W)的热处理环舟(20)具有顶板(21),底板(22),六列(23-28)和63个环形托盘(31) 。 托盘(31)安装在列(23-28)的凹槽(20a)中。 为了固定托盘(31),固定杆(33)可拆卸地安装在顶板(21)和底板(22)之间。 在顶板(21)和底板(22)上形成有通孔(21a)和安装固定杆(33)的凹部(22a)。 在托盘(31)中形成有与固定杆(33)接合的凹口(34)。 在柱(23)中形成有与固定杆(33)接合的凹口(32)。 在每个托盘(31)上形成突起(41)以抵靠柱(24)的侧表面。
    • 59. 发明授权
    • Heat treatment method
    • 热处理方法
    • US5813851A
    • 1998-09-29
    • US708710
    • 1996-09-05
    • Ken Nakao
    • Ken Nakao
    • H01L21/22C23C16/46C30B25/12C30B31/14H01L21/00H01L21/31H01L21/324F27D5/00
    • H01L21/67109C23C16/46C30B25/12C30B31/14
    • When a wafer boat having wafers, objects to be treated, placed thereon is loaded into a reaction tube, which is then raised in temperature by a heating section at a speed of 50.degree. C./min or more, a pressure reduction degree of the reaction tube is lowered or a hydrogen gas is supplied. A surface roughness of a portion in contact with the wafers on the wafer boat is 50 .mu.m or less. Thereby, a heat transfer coefficient relative to the wafers is improved to suppress an in-plane temperature difference smaller. Accordingly, when the objects to be treated are raised in temperature in the reaction tube for heat treatment, it is possible to suppress the in-plane temperature difference of the substances to be smaller to prevent an occurrence of a slip or warp which leads to the lowering of a yield.
    • 将具有放置在其上的待处理物体的晶片舟装载到反应管中,然后通过加热部以50℃/分钟以上的速度升温,减压度 反应管降低或供应氢气。 与晶片舟皿上的晶片接触的部分的表面粗糙度为50μm以下。 由此,能够提高相对于晶片的传热系数,能够抑制面内的温度差的变小。 因此,当待处理物体在用于热处理的反应管中的温度升高时,可以将物质的面内温度差减小到更小,以防止导致滑动或翘曲的发生 降低产量。
    • 60. 发明授权
    • Method and apparatus for heat treating
    • 热处理方法和装置
    • US5431561A
    • 1995-07-11
    • US166014
    • 1993-12-14
    • Kikuo YamabeKeitaro ImaiKatsuya OkumuraKen NakaoSeikou Ueno
    • Kikuo YamabeKeitaro ImaiKatsuya OkumuraKen NakaoSeikou Ueno
    • H01L21/324C30B31/12C30B31/14H01L21/22H01L21/31H01L21/673H01L21/683F27D5/00
    • C30B31/12C30B31/14
    • A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.
    • 一种热处理装置中的热处理方法和装置,其特征在于,具有要加入预定气体的加热室,设置在所述加热室周围的加热器和设置在所述加热室中的夹具,用于支撑待处理的多个基板的晶片 彼此并联,其中为了使热处理中要处理的基板的晶片的温度分布均匀,形成夹具以确定其尺寸和形状,其具有在 根据具有预定形状确定步骤的热处理方法的梯度,使得夹具形成为环状托盘(即,支撑环),用于在周边保持要处理的基板,并且托盘的厚度等于或等于 其外周侧比其内周侧厚。