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51. 发明申请

US20090025751A1 Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal 有权
标题翻译：从包含IIIB族金属的氧化物或氟化物的涂层表面除去污染物的方法
公开(公告)号：US20090025751A1
公开(公告)日：2009-01-29
申请号：US12284540
申请日：2008-09-22
申请人： Xikun Wang , Li Xu , Jennifer Y. Sun
发明人： Xikun Wang , Li Xu , Jennifer Y. Sun
IPC分类号： B08B3/08 , B08B3/12
CPC分类号： C30B35/00 , C23C4/11 , C23C4/18 , C23C14/00 , C23C16/4404 , C23C28/042 , Y10S134/902 , Y10T428/26
摘要： Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.
摘要翻译：本文公开了一种可用于从包含IIIBB族金属的氧化物或氟化物的涂层表面除去污染物的清洁方法。通常，涂层覆盖作为半导体处理装置的一部分存在的铝基板。涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。涂层可以进一步包含约20体积％或更少的Al 2 O 3。

52. 发明申请

US20080264565A1 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas 有权
标题翻译：减少暴露于含卤素等离子体的表面侵蚀速率的方法和装置
公开(公告)号：US20080264565A1
公开(公告)日：2008-10-30
申请号：US11796211
申请日：2007-04-27
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/48 , C23C16/22 , H01L21/3065
CPC分类号： C23C16/4404 , C04B35/111 , C04B35/505 , C04B41/009 , C04B41/5045 , C04B41/5346 , C04B41/87 , C04B41/91 , C04B2235/3217 , C04B2235/3222 , C04B2235/3244 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2235/9692 , H01J37/32467 , C04B41/4527 , C04B41/5031 , C04B41/5042 , C04B35/10 , C04B35/14 , C04B35/581
摘要： A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.
摘要翻译：一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。陶瓷制品包括多相陶瓷，通常包括两相至三相。陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为约10摩尔％至约30摩尔％。

53. 发明授权

US07389462B1 System and methods for high rate hardware-accelerated network protocol processing 有权
标题翻译：高速率硬件加速网络协议处理的系统和方法
公开(公告)号：US07389462B1
公开(公告)日：2008-06-17
申请号：US10781553
申请日：2004-02-17
申请人： Linghsiao Wang , Li Xu
发明人： Linghsiao Wang , Li Xu
IPC分类号： H04L1/18 , G08C25/02
CPC分类号： H04L1/188
摘要： Disclosed is a system and methods for accelerating network protocol processing for devices configured to process network traffic at relatively high data rates. The system incorporates a hardware-accelerated protocol processing module that handles steady state network traffic and a software-based processing module that handles infrequent and exception cases in network traffic processing.
摘要翻译：公开了一种用于加速网络协议处理的系统和方法，该设备被配置为以相对高的数据速率处理网络流量。该系统包含处理稳态网络流量的硬件加速协议处理模块，以及处理网络流量处理中不频繁和异常情况的基于软件的处理模块。

54. 发明授权

US07383347B2 Method and apparatus for providing extensible scalable transcoding of multimedia content 失效
标题翻译：用于提供多媒体内容的可扩展可缩放转码的方法和装置
公开(公告)号：US07383347B2
公开(公告)日：2008-06-03
申请号：US09908306
申请日：2001-07-18
申请人： Maria Rene Ebling , Guerney Douglass Holloway Hunt , Hui Lei , Gregory Sallmard Stewart , Li Xu
发明人： Maria Rene Ebling , Guerney Douglass Holloway Hunt , Hui Lei , Gregory Sallmard Stewart , Li Xu
IPC分类号： G06F13/00
CPC分类号： H04L65/104 , H04L29/06027 , H04L65/103 , H04L65/605 , H04L67/04 , H04L67/303 , H04L67/306 , H04L69/329
摘要： A hierarchical gateway system for use in a message delivery system is disclosed, in which each tier of gateways in the hierarchy includes means for transforming incoming messages in a manner required by downstream end-user devices. The hierarchical gateway system has the advantage of being scalable and extensible while avoiding transmission bottlenecks as the number of end-user device types, and their differing system requirements, increase. The invention is operable in the context of a notification server architecture, as well as the Web.
摘要翻译：公开了一种用于消息传递系统的分级网关系统，其中层级中的每个网关层包括以下游终端用户设备所要求的方式来转换传入消息的装置。分层网关系统具有可扩展性和可扩展性的优点，同时避免传输瓶颈，因为最终用户设备类型的数量及其不同的系统要求增加。本发明可以在通知服务器架构以及Web的上下文中操作。

55. 发明申请

US20080017516A1 FORMING A CHAMBER COMPONENT HAVING A YTTRIUM-CONTAINING COATING 有权
标题翻译：形成含有YTTRIUM的涂料的室内组分
公开(公告)号：US20080017516A1
公开(公告)日：2008-01-24
申请号：US11766723
申请日：2007-06-21
申请人： Nianci Han , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Sun
发明人： Nianci Han , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Sun
IPC分类号： C25D5/16
CPC分类号： C25D3/54 , C23C16/4404 , C23C16/4411 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/36 , C23C28/42 , C23C30/00 , C23C30/005 , C25D3/44 , C25D3/56 , C25D5/18 , C25D5/50 , H01J37/32477 , H01L21/67115 , Y10T428/12458 , Y10T428/12611 , Y10T428/12618 , Y10T428/12667 , Y10T428/12736 , Y10T428/12778 , Y10T428/12806
摘要： A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.
摘要翻译：形成能够在处理室中暴露于等离子体的组分的方法包括在表面上形成包括表面和电镀钇以及任选的铝或锆的结构。此后，可以将电镀层退火以氧化钇和其它电镀物质。

56. 发明授权

US07213732B2 Contact trip mechanism for nailer 有权
标题翻译：钉枪接触脱扣机构
公开(公告)号：US07213732B2
公开(公告)日：2007-05-08
申请号：US11068344
申请日：2005-02-28
申请人： Craig A Schell , Ashok Samuel Baskar , Paul G Gross , Charles L Bradenbaugh , Robert Alan Berry , David C Tomayko , Li Xu
发明人： Craig A Schell , Ashok Samuel Baskar , Paul G Gross , Charles L Bradenbaugh , Robert Alan Berry , David C Tomayko , Li Xu
IPC分类号： B25C1/04
CPC分类号： B25C1/043 , B25C1/008 , B25C1/046 , B25C1/06 , Y10T16/44
摘要： A contact trip assembly for a power nailer, wherein a contact member includes a curved portion that loops rearwardly towards a handle of the nailer. Also provided is an adjustment assembly including an adjustment plate and a pinion gear, a trigger that is slidably engageable within a housing of the tool, a trigger lock including a ring element, an anti-discharge mechanism including a stop member, and a contact trip lock.
摘要翻译：一种用于电动打钉机的接触跳闸组件，其中，接触构件包括向后朝向所述敲钉器的手柄回转的弯曲部分。还提供了一种调节组件，包括调节板和小齿轮，可滑动地接合在工具的壳体内的触发器，包括环形元件的触发器锁，包括止动构件的防放电机构和接触脱扣锁。

57. 发明授权

US06508911B1 Diamond coated parts in a plasma reactor 失效
标题翻译：在等离子体反应器中的金刚石涂层部件
公开(公告)号：US06508911B1
公开(公告)日：2003-01-21
申请号：US09375243
申请日：1999-08-16
申请人： Nianci Han , Hong Shih , Jennifer Y. Sun , Li Xu
发明人： Nianci Han , Hong Shih , Jennifer Y. Sun , Li Xu
IPC分类号： H05H100
CPC分类号： H01J37/32467 , C23C16/27 , H01J37/32477
摘要： A diamond coating formed on a bulk member used in a plasma processing chamber for processing a substrate such as a semiconductor wafer. The coating is particularly useful in a plasma etching chamber using a chlorine-based chemistry to etch metal. One class of such parts includes a dielectric chamber wall, in particular, a chamber wall through which RF or microwave energy is coupled into the chamber to support the plasma. For example, an RF inductive coil is positioned outside the chamber wall and inductively couples energy into the chamber. Exemplary substrates for the diamond coating include alumina, silicon nitride, silicon carbide, polysilicon, and a SiC/Si composite. Amorphous carbon may be substituted for diamond.
摘要翻译：在用于处理诸如半导体晶片的基板的等离子体处理室中的主体部件上形成的金刚石涂层。该涂层在使用氯基化学蚀刻金属的等离子体蚀刻室中特别有用。一类这样的部件包括电介质室壁，特别是室壁，RF或微波能量通过室壁耦合到室中以支撑等离子体。例如，RF感应线圈定位在室壁外部并且将能量感应地耦合到腔室中。用于金刚石涂层的示例性基底包括氧化铝，氮化硅，碳化硅，多晶硅和SiC / Si复合材料。无定形碳可以代替金刚石。

58. 发明授权

US06476398B1 Beam automation in charged-particle-beam systems 有权
标题翻译：带束粒子束系统中的束自动化
公开(公告)号：US06476398B1
公开(公告)日：2002-11-05
申请号：US09514080
申请日：2000-02-26
申请人： Li Xu , Richard Barnard
发明人： Li Xu , Richard Barnard
IPC分类号： G21K108
CPC分类号： H01J37/21 , H01J37/28 , H01J2237/1532 , H01J2237/216
摘要： Embodiments in accordance with the invention provide respectively for auto-focus, auto-contrast, and auto-correction of astigmatism in both x and y directions, are independent of focus-induced-image-rotation, sample feature orientation and image deformation, and focus-induced-image magnification change, and are insensitive to various kinds of noise. Poor image contrast is handled by an auto-contrast capability. Embodiments in accordance with the invention can achieve high reliability and repeatability, while providing for faster operation than most prior-art methods.
摘要翻译：根据本发明的实施例分别提供了在x和y方向上的像散的自动聚焦，自动对比度和自动校正，独立于聚焦感应图像旋转，样本特征取向和图像变形以及焦点诱导图像放大变化，并且对各种噪声不敏感。较差的图像对比度由自动对比度处理。根据本发明的实施例可以实现高可靠性和重复性，同时提供比大多数现有技术方法更快的操作。

59. 发明授权

US06352081B1 Method of cleaning a semiconductor device processing chamber after a copper etch process 失效
标题翻译：在铜蚀刻工艺之后清洁半导体器件处理室的方法
公开(公告)号：US06352081B1
公开(公告)日：2002-03-05
申请号：US09350802
申请日：1999-07-09
申请人： Danny Chien Lu , Allen Zhao , Peter Hsieh , Hong Shih , Li Xu , Yan Ye
发明人： Danny Chien Lu , Allen Zhao , Peter Hsieh , Hong Shih , Li Xu , Yan Ye
IPC分类号： B08B900
CPC分类号： H01L21/67028 , Y10S438/905
摘要： The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the following general steps: (a) an oxidation step, in which interior surfaces of the processing chamber are contacted with an oxidizing plasma; (b) a first non-plasma cleaning step, in which interior surfaces of the processing chamber are contacted with an H+hfac-comprising gas; and (c) a second cleaning step, in which interior surfaces of the processing chamber are contacted with a plasma containing reactive fluorine species, whereby at least a portion of the copper etch byproducts remaining after step (b) are volatilized into gaseous species, which are removed from the processing chamber. The method of the invention is preferably performed at a chamber wall temperature of at least 150° C. in order to achieve optimum cleaning of the chamber at the chamber operating pressures typically used during the cleaning process. The dry cleaning method of the invention can be performed between wafer processing runs without opening the processing chamber, thereby minimizing potential contamination to the chamber as well as chamber downtime.
摘要翻译：本发明是在铜蚀刻工艺之后从半导体处理室的表面去除沉积的蚀刻副产物的方法。本发明的方法包括以下一般步骤：（a）氧化步骤，其中处理室的内表面与氧化等离子体接触; （b）第一非等离子体清洗步骤，其中处理室的内表面与含H + hfac的气体接触; 和（c）第二清洁步骤，其中处理室的内表面与含有反应性氟物质的等离子体接触，由此在步骤（b）之后残留的铜蚀刻副产物的至少一部分挥发成气态物质，其中从处理室中取出。本发明的方法优选在至少150℃的室壁温度下进行，以便在清洁过程中通常使用的室的操作压力下实现室的最佳清洁。本发明的干式清洗方法可以在晶片处理运行之间进行，而不会打开处理室，从而最小化对室的潜在污染以及室停机时间。

60. 发明授权

US09759843B2 Optical beam shaping and polarization selection on LED with wavelength conversion 有权
公开(公告)号：US09759843B2
公开(公告)日：2017-09-12
申请号：US13807269
申请日：2011-06-28
申请人： Li Xu , Bo Pi
发明人： Li Xu , Bo Pi
IPC分类号： F21V9/00 , G02B5/04 , G02B5/02 , F21V9/14
CPC分类号： G02B5/04 , F21V9/00 , F21V9/14 , G02B5/0231 , G02B5/0278
摘要： Techniques, devices and materials for light source devices that convert excitation light into different light via wavelength conversion materials. One example of a light source includes an excitation light source; a wavelength conversion material that absorbs light from the excitation light source and emits a longer wavelength light; and a layer of a transparent material that has plural optical structures in contact to or in close proximity to the wavelength conversion material to receive the emitted light from the wavelength conversion material and to modify the received light to produce output light with a desired spatial pattern associated with the plural optical structures.

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