会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 53. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US07470998B2
    • 2008-12-30
    • US11373154
    • 2006-03-13
    • Katsuya OkumuraKoji MaruyamaKazuya NagasekiAkiteru Rai
    • Katsuya OkumuraKoji MaruyamaKazuya NagasekiAkiteru Rai
    • H01L23/84H01L23/52H01L29/40
    • H01L21/76898H01L23/481H01L2924/0002H01L2924/00H01L2924/00012
    • The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
    • 本发明涉及一种半导体器件,其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接, 其制造方法。 根据本发明的半导体器件包括:第一衬底,包括前表面和后表面;第一器件,具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构,所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。
    • 60. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20050087853A1
    • 2005-04-28
    • US10855889
    • 2004-05-28
    • Katsuya OkumuraKoji MaruyamaKazuya NagasekiAkiteru Rai
    • Katsuya OkumuraKoji MaruyamaKazuya NagasekiAkiteru Rai
    • H01L23/52H01L21/3205H01L21/768H01L23/12H01L23/48H01L25/065H01L25/07H01L25/18H01L23/02H05K7/02
    • H01L21/76898H01L23/481H01L2924/0002H01L2924/00H01L2924/00012
    • The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
    • 本发明涉及一种半导体器件,其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接, 其制造方法。 根据本发明的半导体器件包括:第一衬底,包括前表面和后表面;第一器件,具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构,所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。