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51. 发明授权

US08046722B2 Method for correcting a mask pattern, system for correcting a mask pattern, program, method for manufacturing a photomask and method for manufacturing a semiconductor device 失效
标题翻译：用于校正掩模图案的方法，用于校正掩模图案的系统，程序，用于制造光掩模的方法和用于制造半导体器件的方法
公开(公告)号：US08046722B2
公开(公告)日：2011-10-25
申请号：US12379047
申请日：2009-02-11
申请人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue
发明人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue
IPC分类号： G06F17/50 , H01L21/66
CPC分类号： G03F7/70441 , G03F1/36
摘要： A computer implemented method for correcting a mask pattern includes: predicting a displacement of a device pattern by using a mask pattern to form the device pattern and a variation of a process condition; determinating an optical proximity correction value so that the displacement falls within a displacement tolerance of the device pattern; and correcting the mask pattern using the optical proximity correction value.
摘要翻译：用于校正掩模图案的计算机实现方法包括：通过使用掩模图案来预测设备图案的位移以形成设备图案和处理条件的变化; 确定光学接近校正值，使得位移落在器件图案的位移公差内; 以及使用光学接近校正值来校正掩模图案。

52. 发明授权

US07594216B2 Method and system for forming a mask pattern, method of manufacturing a semiconductor device, system forming a mask pattern on data, cell library and method of forming a photomask 失效
标题翻译：用于形成掩模图案的方法和系统，制造半导体器件的方法，在数据上形成掩模图案的系统，单元库和形成光掩模的方法
公开(公告)号：US07594216B2
公开(公告)日：2009-09-22
申请号：US10933334
申请日：2004-09-03
申请人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue
发明人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , H01J37/3026 , H01J2237/31769
摘要： A method of forming a mask pattern comprises the following steps. A second cell library is prepared by making process proximity effect correction with respect to cell patterns stored in a first cell library. The second cell library stores corrected cell patterns. A first corrected cell pattern and a second corrected cell pattern of the corrected cell patterns are placed so that an edge of the first corrected cell pattern and an edge of the second corrected cell pattern contact or come close to or overlap each other. A boundary pattern at the boundary neighborhood between the first corrected cell pattern and the second corrected cell pattern is extracted. Process proximity effect correction is made with respect to the boundary pattern.
摘要翻译：形成掩模图案的方法包括以下步骤。通过相对于存储在第一个细胞库中的细胞图案进行过程接近效应校正来制备第二个细胞库。第二个细胞库存储校正的细胞图案。放置经校正的单元图案的第一校正单元图案和第二校正单元图形，使得第一校正单元图案的边缘和第二校正单元图案的边缘彼此接近或重叠。提取在第一校正单元图案和第二校正单元图案之间的边界邻域处的边界图案。相对于边界图案进行过程接近效应校正。

53. 发明授权

US07556896B2 Inspection method and photomask 失效
标题翻译：检验方法和光掩模
公开(公告)号：US07556896B2
公开(公告)日：2009-07-07
申请号：US11606121
申请日：2006-11-30
申请人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F9/00
CPC分类号： G03F7/70566 , G03F7/706
摘要： An inspection method, includes obtaining a first optical characteristic of a projection optical system by transferring an image of an aberration measurement unit of a photomask on a first resist film coated on a first wafer by use of a first polarized exposure light; obtaining a second optical characteristic of the projection optical system by transferring the image of the aberration measurement unit on a second resist film coated on a second wafer by use of a second exposure light having a polarization state different from the first exposure light; and calculating a difference between the first and second optical characteristics.
摘要翻译：一种检查方法，包括通过使用第一偏振曝光光在涂覆在第一晶片上的第一抗蚀膜上转印光掩模的像差测量单元的图像来获得投影光学系统的第一光学特性; 通过使用具有与第一曝光光不同的偏振状态的第二曝光光，将像差测量单元的图像转印在涂覆在第二晶片上的第二抗蚀剂膜上，从而获得投影光学系统的第二光学特性; 以及计算第一和第二光学特性之间的差。

54. 发明授权

US07473495B2 Method of creating predictive model, method of managing process steps, method of manufacturing semiconductor device, method of manufacturing photo mask, and computer program product 有权
标题翻译：创建预测模型的方法，管理工艺步骤的方法，制造半导体器件的方法，制造光罩的方法以及计算机程序产品
公开(公告)号：US07473495B2
公开(公告)日：2009-01-06
申请号：US10927218
申请日：2004-08-27
申请人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
发明人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
IPC分类号： G03F9/00
CPC分类号： G03F1/36 , G06F17/5068
摘要： A method of creating a predictive model of a process proximity effect comprises: preparing a predictive model of a process proximity effect including a non-determined parameter; and determining the non-determined parameter, the method comprises: preparing a pattern group for modeling, the pattern group comprising a plurality of repetition patterns, the plurality of repetition patterns being obtained by changing a first and second dimensions of a repetition pattern which repeats a basic pattern, the first dimension defining the basic pattern, and the second dimension defining repetition of the basic pattern; selecting a predetermined repetition pattern from the pattern group for modeling, the basic pattern of the predetermined repetition pattern corresponding to a pattern which is to be formed on a wafer and has a predetermined dimension; and determining the non-determined parameter in the predictive model based on the predetermined repetition pattern and the pattern having the predetermined dimension.
摘要翻译：一种创建过程接近效应的预测模型的方法包括：准备包括非确定参数的过程接近效应的预测模型; 并且确定所述未确定的参数，所述方法包括：准备用于建模的图案组，所述图案组包括多个重复图案，所述多个重复图案是通过改变重复图案的重复图案的第一和第二维度而获得的基本图案，定义基本图案的第一维度和定义基本图案重复的第二维度; 从所述图案组中选择预定的重复图案以进行建模，所述预定重复图案的基本图案与将要形成在晶片上并且具有预定尺寸的图案相对应; 以及基于预定重复图案和具有预定尺寸的图案来确定预测模型中的未确定参数。

55. 发明授权

US07353145B2 Method for correcting a mask pattern, a computer program product, a method for producing a photomask, and method for manufacturing a semiconductor device 有权
标题翻译：用于校正掩模图案的方法，计算机程序产品，光掩模的制造方法以及半导体器件的制造方法
公开(公告)号：US07353145B2
公开(公告)日：2008-04-01
申请号：US10307968
申请日：2002-12-03
申请人： Satoshi Tanaka , Soichi Inoue
发明人： Satoshi Tanaka , Soichi Inoue
IPC分类号： G06F7/60 , G06F17/50 , G05B19/18 , G03F1/00
CPC分类号： G03F1/36
摘要： A computer implemented method for correcting a mask pattern, includes: preparing a designed mask pattern; obtaining a rough corrected mask pattern from the designed mask pattern by applying a rough correction; and obtaining a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction using a model based correction method with a precision model that simulates a transferred image of an exposure apparatus.
摘要翻译：一种用于校正掩模图案的计算机实现方法，包括：准备设计的掩模图案; 通过粗略校正从设计的掩模图案获得粗糙校正的掩模图案; 以及通过使用模拟所述曝光装置的转印图像的精度模型，使用基于模型的校正方法应用精度校正，从所述粗略校正的掩模图案中获得精密校正的掩模图案。

56. 发明申请

US20070259280A1 Photomask, exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20070259280A1
公开(公告)日：2007-11-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/20 , G03F1/00 , G03C5/00 , G03F7/40 , G03F7/38
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

57. 发明授权

US07181707B2 Method of setting process parameter and method of setting process parameter and/or design rule 有权
标题翻译：设置过程参数的方法和设置过程参数和/或设计规则的方法
公开(公告)号：US07181707B2
公开(公告)日：2007-02-20
申请号：US10385628
申请日：2003-03-12
申请人： Toshiya Kotani , Satoshi Tanaka , Koji Hashimoto , Soichi Inoue , Ichiro Mori
发明人： Toshiya Kotani , Satoshi Tanaka , Koji Hashimoto , Soichi Inoue , Ichiro Mori
IPC分类号： G06F17/50 , G06K9/00
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.
摘要翻译：公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。

58. 发明授权

US06964031B2 Mask pattern generating method and manufacturing method of semiconductor apparatus 失效
标题翻译：半导体装置的掩模图案生成方法和制造方法
公开(公告)号：US06964031B2
公开(公告)日：2005-11-08
申请号：US10255832
申请日：2002-09-27
申请人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue , Sachiko Kobayashi , Hirotaka Ichiakwa
发明人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue , Sachiko Kobayashi , Hirotaka Ichiakwa
IPC分类号： H01L21/027 , G03F1/00 , G03F1/36 , G06F17/50 , H01L21/00
CPC分类号： G03F1/36
摘要： A mask pattern generation method of generating a mask pattern from a designed pattern, comprising preparing the designed pattern, preparing a correction parameter, preparing a first correction library in which a plurality of pairs of an edge coordinate group and a correction value group to correct the edge coordinate group is registered, acquiring edge coordinate groups of the designed patterns, generating a second correction library in which only the plurality of pairs of an edge coordinate group agreeing with the acquired edge coordinate group and the correction value group is registered in the first correction library and simulation using the correction parameter, and correcting the designed pattern using the second correction library.
摘要翻译：一种从设计图案生成掩模图案的掩模图案生成方法，包括准备设计图案，准备校正参数，准备第一校正库，其中多对边缘坐标组和校正值组校正第登记边缘坐标组，获取所设计图案的边缘坐标组，生成第二校正库，其中在所述第一校正中仅登记与获取的边缘坐标组和校正值组一致的边缘坐标组的多对对库和模拟，并使用第二校正库校正设计的模式。

59. 发明授权

US06901577B2 Pattern forming method and semiconductor device manufactured by using said pattern forming method 有权
公开(公告)号：US06901577B2
公开(公告)日：2005-05-31
申请号：US10183572
申请日：2002-06-28
申请人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue
发明人： Toshiya Kotani , Satoshi Tanaka , Soichi Inoue
IPC分类号： G03F1/00 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , G06F17/50 , G06F9/45
CPC分类号： G03F1/36 , Y10S438/926
摘要： A pattern forming method includes determining an allowable value of an etching conversion difference, obtaining a maximum distance between patterns generating the etching conversion difference within the allowable value, the patterns including main patterns or both main patterns and a dummy pattern, preparing a first design layout in which a first distance between the main patterns is smaller than the maximum distance, or a second design layout in which a second distance between the main patterns and the dummy pattern is smaller than the maximum distance, performing a design data conversion based on the first or second design layout to form first or second design data, and forming the main patterns by using the first design data, or forming both the main patterns and the dummy pattern by using the second design data.

60. 发明申请

US20050089768A1 Method of creating predictive model, method of managing process steps, method of manufacturing semiconductor device, method of manufacturing photo mask, and computer program product 有权
标题翻译：创建预测模型的方法，管理工艺步骤的方法，制造半导体器件的方法，制造光罩的方法以及计算机程序产品
公开(公告)号：US20050089768A1
公开(公告)日：2005-04-28
申请号：US10927218
申请日：2004-08-27
申请人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
发明人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
IPC分类号： G03F1/36 , G03F1/68 , G06F17/50 , H01L21/02 , H01L21/027 , G03C5/00 , G03F9/00
CPC分类号： G03F1/36 , G06F17/5068
摘要： A method of creating a predictive model of a process proximity effect comprises: preparing a predictive model of a process proximity effect including a non-determined parameter; and determining the non-determined parameter, the method comprises: preparing a pattern group for modeling, the pattern group comprising a plurality of repetition patterns, the plurality of repetition patterns being obtained by changing a first and second dimensions of a repetition pattern which repeats a basic pattern, the first dimension defining the basic pattern, and the second dimension defining repetition of the basic pattern; selecting a predetermined repetition pattern from the pattern group for modeling, the basic pattern of the predetermined repetition pattern corresponding to a pattern which is to be formed on a wafer and has a predetermined dimension; and determining the non-determined parameter in the predictive model based on the predetermined repetition pattern and the pattern having the predetermined dimension.
摘要翻译：一种创建过程接近效应的预测模型的方法包括：准备包括非确定参数的过程接近效应的预测模型; 并且确定所述未确定的参数，所述方法包括：准备用于建模的图案组，所述图案组包括多个重复图案，所述多个重复图案是通过改变重复图案的重复图案的第一和第二维度而获得的基本图案，定义基本图案的第一维度和定义基本图案重复的第二维度; 从所述图案组中选择预定的重复图案以进行建模，所述预定重复图案的基本图案与将要形成在晶片上并且具有预定尺寸的图案相对应; 以及基于预定重复图案和具有预定尺寸的图案来确定预测模型中的未确定参数。

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