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1. 发明授权

US07473495B2 Method of creating predictive model, method of managing process steps, method of manufacturing semiconductor device, method of manufacturing photo mask, and computer program product 有权
标题翻译：创建预测模型的方法，管理工艺步骤的方法，制造半导体器件的方法，制造光罩的方法以及计算机程序产品
公开(公告)号：US07473495B2
公开(公告)日：2009-01-06
申请号：US10927218
申请日：2004-08-27
申请人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
发明人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
IPC分类号： G03F9/00
CPC分类号： G03F1/36 , G06F17/5068
摘要： A method of creating a predictive model of a process proximity effect comprises: preparing a predictive model of a process proximity effect including a non-determined parameter; and determining the non-determined parameter, the method comprises: preparing a pattern group for modeling, the pattern group comprising a plurality of repetition patterns, the plurality of repetition patterns being obtained by changing a first and second dimensions of a repetition pattern which repeats a basic pattern, the first dimension defining the basic pattern, and the second dimension defining repetition of the basic pattern; selecting a predetermined repetition pattern from the pattern group for modeling, the basic pattern of the predetermined repetition pattern corresponding to a pattern which is to be formed on a wafer and has a predetermined dimension; and determining the non-determined parameter in the predictive model based on the predetermined repetition pattern and the pattern having the predetermined dimension.
摘要翻译：一种创建过程接近效应的预测模型的方法包括：准备包括非确定参数的过程接近效应的预测模型; 并且确定所述未确定的参数，所述方法包括：准备用于建模的图案组，所述图案组包括多个重复图案，所述多个重复图案是通过改变重复图案的重复图案的第一和第二维度而获得的基本图案，定义基本图案的第一维度和定义基本图案重复的第二维度; 从所述图案组中选择预定的重复图案以进行建模，所述预定重复图案的基本图案与将要形成在晶片上并且具有预定尺寸的图案相对应; 以及基于预定重复图案和具有预定尺寸的图案来确定预测模型中的未确定参数。

2. 发明申请

US20050089768A1 Method of creating predictive model, method of managing process steps, method of manufacturing semiconductor device, method of manufacturing photo mask, and computer program product 有权
标题翻译：创建预测模型的方法，管理工艺步骤的方法，制造半导体器件的方法，制造光罩的方法以及计算机程序产品
公开(公告)号：US20050089768A1
公开(公告)日：2005-04-28
申请号：US10927218
申请日：2004-08-27
申请人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
发明人： Satoshi Tanaka , Soichi Inoue , Koji Hashimoto , Shigeru Hasebe
IPC分类号： G03F1/36 , G03F1/68 , G06F17/50 , H01L21/02 , H01L21/027 , G03C5/00 , G03F9/00
CPC分类号： G03F1/36 , G06F17/5068
摘要： A method of creating a predictive model of a process proximity effect comprises: preparing a predictive model of a process proximity effect including a non-determined parameter; and determining the non-determined parameter, the method comprises: preparing a pattern group for modeling, the pattern group comprising a plurality of repetition patterns, the plurality of repetition patterns being obtained by changing a first and second dimensions of a repetition pattern which repeats a basic pattern, the first dimension defining the basic pattern, and the second dimension defining repetition of the basic pattern; selecting a predetermined repetition pattern from the pattern group for modeling, the basic pattern of the predetermined repetition pattern corresponding to a pattern which is to be formed on a wafer and has a predetermined dimension; and determining the non-determined parameter in the predictive model based on the predetermined repetition pattern and the pattern having the predetermined dimension.
摘要翻译：一种创建过程接近效应的预测模型的方法包括：准备包括非确定参数的过程接近效应的预测模型; 并且确定所述未确定的参数，所述方法包括：准备用于建模的图案组，所述图案组包括多个重复图案，所述多个重复图案是通过改变重复图案的重复图案的第一和第二维度而获得的基本图案，定义基本图案的第一维度和定义基本图案重复的第二维度; 从所述图案组中选择预定的重复图案以进行建模，所述预定重复图案的基本图案与将要形成在晶片上并且具有预定尺寸的图案相对应; 以及基于预定重复图案和具有预定尺寸的图案来确定预测模型中的未确定参数。

3. 发明授权

US07090949B2 Method of manufacturing a photo mask and method of manufacturing a semiconductor device 有权
标题翻译：制造光掩模的方法和制造半导体器件的方法
公开(公告)号：US07090949B2
公开(公告)日：2006-08-15
申请号：US10724738
申请日：2003-12-02
申请人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
发明人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
IPC分类号： G01F9/00
CPC分类号： G03F1/36 , G03F1/68
摘要： Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.
摘要翻译：公开了一种制造光掩模的方法，其包括：对掩模基板上形成的掩模图案准备掩模数据，使用掩模数据计算相对于包含在掩模图案中的每个图案的边缘移动灵敏度，边缘移动灵敏度对应对于在图案边缘变化时要设置的适当曝光剂量和曝光剂量之间的差异，基于计算出的边缘移动灵敏度确定掩模图案的监视部分，实际在掩模基板上形成掩模图案，获取基于所获取的尺寸，确定在掩模基板上形成的掩模图案的评估值，并且确定评估值是否满足的掩模图案的形成在掩模基板上的对应于监视部分的掩模图案的部分中的图案的尺寸预定条件。

4. 发明授权

US07118834B2 Exposure method, exposure quantity calculating system using the exposure method and semiconductor device manufacturing method using the exposure method 有权
公开(公告)号：US07118834B2
公开(公告)日：2006-10-10
申请号：US10814303
申请日：2004-04-01
申请人： Takashi Sato , Shoji Mimotogi , Shigeru Hasebe
发明人： Takashi Sato , Shoji Mimotogi , Shigeru Hasebe
IPC分类号： G01F9/00 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/705
摘要： An exposure method is disclosed, which comprises preparing a first mask in which a size of a mask pattern is measured in advance, calculating a first exposure quantity to be applied to the first mask to provide a first resist pattern by using the first mask, simulating optical intensity distributions on a wafer in a case where the first mask is used and an optical intensity distribution on the wafer in a case where a second mask is used, a size of a mask pattern of the second mask being measured in advance, calculating a difference in optical intensity between the first mask and the second mask from the simulated optical intensity distributions, and calculating a second exposure quantity to be applied to the second mask to provide a second resist pattern, from the first exposure quantity and the difference in optical intensity.

5. 发明授权

US07446852B2 Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project 失效
标题翻译：投影曝光掩模验收决策系统，投影曝光掩模验收决策方法，半导体器件制造方法和计算机程序项目
公开(公告)号：US07446852B2
公开(公告)日：2008-11-04
申请号：US11653279
申请日：2007-01-16
申请人： Yukiyasu Arisawa , Shoji Mimotogi , Shigeru Hasebe
发明人： Yukiyasu Arisawa , Shoji Mimotogi , Shigeru Hasebe
IPC分类号： G03B27/68 , G03B27/52 , G03F1/00
CPC分类号： G03F1/84 , G03F7/705 , G03F7/70525
摘要： A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.
摘要翻译：投影曝光掩模验收判定系统包括：保证对象测量单元，用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元，用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量，测量单元，第二曝光特性劣化量计算单元，用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元，计算第一和第二数量的简单和，计算第一和第二数量的总和平均值的单位，全部曝光特性劣化量计算单元，计算作为简单和的r的内部分割值的整体曝光特性劣化量总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

6. 发明申请

US20060292460A1 Exposure method, exposure quantity calculating system using the exposure method and semiconductor device manufacturing method using the exposure method 失效
公开(公告)号：US20060292460A1
公开(公告)日：2006-12-28
申请号：US11512108
申请日：2006-08-30
申请人： Takashi Sato , Shoji Mimotogi , Shigeru Hasebe
发明人： Takashi Sato , Shoji Mimotogi , Shigeru Hasebe
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F7/70625 , G03F7/705
摘要： An exposure method is disclosed, which comprises preparing a first mask in which a size of a mask pattern is measured in advance, calculating a first exposure quantity to be applied to the first mask to provide a first resist pattern by using the first mask, simulating optical intensity distributions on a wafer in a case where the first mask is used and an optical intensity distribution on the wafer in a case where a second mask is used, a size of a mask pattern of the second mask being measured in advance, calculating a difference in optical intensity between the first mask and the second mask from the simulated optical intensity distributions, and calculating a second exposure quantity to be applied to the second mask to provide a second resist pattern, from the first exposure quantity and the difference in optical intensity.

7. 发明授权

US06333213B2 Method of forming photomask and method of manufacturing semiconductor device 失效
公开(公告)号：US06333213B2
公开(公告)日：2001-12-25
申请号：US09748168
申请日：2000-12-27
申请人： Shigeru Hasebe , Mineo Goto , Osamu Ikenaga
发明人： Shigeru Hasebe , Mineo Goto , Osamu Ikenaga
IPC分类号： H01L2182
CPC分类号： G03F7/0035 , G03F1/76 , Y10S438/926
摘要： Resist film patterns are formed on a light shielding film formed on a surface of the glass substrate. The resist film patterns cover regions A and B of the surface of the substrate. Then, using the resist film patterns as a mask, the light shielding film is patterned to form the light shielding film pattern in the regions A and B. The light shielding film pattern formed in region B is used as a dummy pattern. Then, a further resist film is formed over the light shielding film patterns of the regions A and B. The resist film is patterned to provide only a resist film pattern covering the region A. Thereafter, an etching processing is applied for removing the light shielding film pattern in the region B using the resist film pattern as a mask. In this method, the presence of the dummy pattern is an important feature.

8. 发明授权

US08336004B2 Dimension assurance of mask using plurality of types of pattern ambient environment 有权
标题翻译：使用多种图案周边环境的面膜尺寸保证
公开(公告)号：US08336004B2
公开(公告)日：2012-12-18
申请号：US13024604
申请日：2011-02-10
申请人： Shigeki Nojima , Tetsuaki Matsunawa , Shigeru Hasebe , Masahiro Miyairi
发明人： Shigeki Nojima , Tetsuaki Matsunawa , Shigeru Hasebe , Masahiro Miyairi
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , H01L22/12 , H01L22/20
摘要： According to a mask verifying method of the embodiment, a difference between an actual dimension of a mask pattern and a simulation dimension is calculated as a computational estimated value. Moreover, a difference between an actual dimension of the mask pattern that is actually measured and a dimension on pattern data is calculated as an actually-measured difference. Then, it is verified whether a mask pattern dimension passes or fails based on the calculated value. When calculating the computational estimated value, a model function, which is set based on each correspondence relationship between an actual dimension and a mask simulation dimension of a test pattern, which includes a plurality of types of pattern ambient environments, to the mask pattern.
摘要翻译：根据本实施例的掩模验证方法，计算掩模图案的实际尺寸与模拟尺寸之间的差异作为计算估计值。此外，将实际测量的掩模图案的实际尺寸与图案数据上的尺寸之间的差计算为实际测量的差。然后，根据计算值验证掩模图案尺寸是否通过或失败。当计算计算估计值时，将基于包括多种图案环境环境的测试图案的实际尺寸和掩模模拟尺寸之间的每个对应关系设置的模型函数提供给掩模图案。

9. 发明申请

US20060190875A1 Pattern extracting system, method for extracting measuring points, method for extracting patterns, and computer program product for extracting patterns 审中-公开
标题翻译：模式提取系统，提取测点的方法，提取模式的方法，以及提取模式的计算机程序产品
公开(公告)号：US20060190875A1
公开(公告)日：2006-08-24
申请号：US11325515
申请日：2006-01-05
申请人： Yukiyasu Arisawa , Osamu Ikenaga , Shigeki Nojima , Shigeru Hasebe
发明人： Yukiyasu Arisawa , Osamu Ikenaga , Shigeki Nojima , Shigeru Hasebe
IPC分类号： G06F17/50
CPC分类号： G03F7/7065 , G03F1/36 , G03F1/68 , G03F1/84
摘要： A pattern extracting system includes a sampler configured to sample test candidate patterns from a circuit pattern, based on a lithographic process tolerance, a space classification module configured to classify the test candidate patterns into space distance groups depending on a space distance to an adjacent pattern, a density classification module configured to classify the test candidate patterns into pattern density groups depending on a surrounding pattern density, and an assessment module configured to assess actual measurements of dimensional errors of the test candidate patterns classified into the space distance groups and the pattern density groups.
摘要翻译：模式提取系统包括：取样器，被配置为基于光刻处理容限从电路图案中取样测试候选图案;空间分类模块，被配置为根据与相邻图案的空间距离将测试候选图案分类为空间距离组; 密度分类模块，其被配置为根据周围图案密度将测试候选图案分类为图案密度组;以及评估模块，其被配置为评估分类为空间距离组和图案密度组的测试候选模式的尺寸误差的实际测量值。

10. 发明申请

US20110201138A1 MASK VERIFYING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权
标题翻译：掩模验证方法，半导体器件的制造方法和计算机程序产品
公开(公告)号：US20110201138A1
公开(公告)日：2011-08-18
申请号：US13024604
申请日：2011-02-10
申请人： Shigeki Nojima , Tetsuaki Matsunawa , Shigeru Hasebe , Masahiro Miyairi
发明人： Shigeki Nojima , Tetsuaki Matsunawa , Shigeru Hasebe , Masahiro Miyairi
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： G03F1/36 , H01L22/12 , H01L22/20
摘要： According to a mask verifying method of the embodiment, a difference between an actual dimension of a mask pattern and a simulation dimension is calculated as a computational estimated value. Moreover, a difference between an actual dimension of the mask pattern that is actually measured and a dimension on pattern data is calculated as an actually-measured difference. Then, it is verified whether a mask pattern dimension passes or fails based on the calculated value. When calculating the computational estimated value, a model function, which is set based on each correspondence relationship between an actual dimension and a mask simulation dimension of a test pattern, which includes a plurality of types of pattern ambient environments, to the mask pattern.
摘要翻译：根据本实施例的掩模验证方法，计算掩模图案的实际尺寸与模拟尺寸之间的差异作为计算估计值。此外，将实际测量的掩模图案的实际尺寸与图案数据上的尺寸之间的差计算为实际测量的差。然后，根据计算值验证掩模图案尺寸是否通过或失败。当计算计算估计值时，将基于包括多种图案环境环境的测试图案的实际尺寸和掩模模拟尺寸之间的每个对应关系设置的模型函数提供给掩模图案。

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