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1. 发明申请

US20070259280A1 Photomask, exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20070259280A1
公开(公告)日：2007-11-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/20 , G03F1/00 , G03C5/00 , G03F7/40 , G03F7/38
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

2. 发明申请

US20050030502A1 Photomask, exposure control method and method of manufacturing a semiconductor device 审中-公开
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20050030502A1
公开(公告)日：2005-02-10
申请号：US10874192
申请日：2004-06-24
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03B27/42 , G03F1/26 , G03F1/38 , G03F1/44 , G03F1/68 , G03F1/70 , G03F7/20 , H01L21/027 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

3. 发明授权

US07396621B2 Exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：曝光控制方法及制造半导体器件的方法
公开(公告)号：US07396621B2
公开(公告)日：2008-07-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/16 , G03F7/20 , G03F7/38 , G03F1/14
CPC分类号： G03F1/44
摘要： A method of manufacturing a semiconductor device includes preparing a projection exposure apparatus and a photomask, the photomask having a transparent substrate and a light shield film arranged in patterns to be transferred to a resist film on a wafer. The patterns include a circuit mask pattern, and first and second mark mask patterns having dimensions which change in accordance with exposure of the resist film. The method further includes forming first and second exposure monitor marks by causing phasing differences of 180 degrees and zero degrees, respectively, of light passing through the corresponding first and second mark mask patterns; measuring the first and second exposure monitor marks; calculating first and second effective exposures based on measured dimensions of the first and second exposure monitor marks; comparing variations of the first and second effective exposures; and changing at least one of a deposit condition of a front-end film formed under the resist film or a resist film coating condition if a variation of the first effective exposure differs from a variation of the second effective exposure.
摘要翻译：制造半导体器件的方法包括制备投影曝光设备和光掩模，所述光掩模具有透明基板和以图案排列的光屏蔽膜，以转印到晶片上的抗蚀剂膜。图案包括电路掩模图案，以及具有根据抗蚀剂膜的曝光而变化的尺寸的第一和第二标记掩模图案。该方法还包括通过分别通过相应的第一和第二标记掩模图案的光180度和零度的相位差来形成第一和第二曝光监视标记; 测量第一和第二曝光监视标记; 基于第一和第二曝光监视标记的测量尺寸来计算第一和第二有效曝光; 比较第一和第二有效曝光的变化; 以及如果第一有效曝光的变化与第二有效曝光的变化不同，则改变形成在抗蚀剂膜下方的前端膜的沉积条件或抗蚀剂膜涂覆条件中的至少一个。

4. 发明授权

US07855047B2 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 有权
公开(公告)号：US07855047B2
公开(公告)日：2010-12-21
申请号：US12654292
申请日：2009-12-16
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： H01L21/00 , G03F1/00 , G03C5/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

5. 发明授权

US07175943B2 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 失效
公开(公告)号：US07175943B2
公开(公告)日：2007-02-13
申请号：US10725571
申请日：2003-12-03
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： G01F9/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

6. 发明授权

US5673103A Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US5673103A
公开(公告)日：1997-09-30
申请号：US703530
申请日：1996-08-23
申请人： Soichi Inoue , Satoshi Tanaka , Tadahito Fujisawa
发明人： Soichi Inoue , Satoshi Tanaka , Tadahito Fujisawa
IPC分类号： G03F7/20 , G02B21/14
CPC分类号： G03F7/70058 , G03F7/70075 , G03F7/70125 , G03F7/70241 , G03F7/7025 , G03F7/70425 , G03F7/70566
摘要： An exposure apparatus for reducing/projecting a plurality of patterns of a photomask, which are elongated in at least two different directions, onto a substrate through the photomask includes a polarized light source for illuminating the photomask, a polarization control unit for changing the direction of polarization of polarized light from the polarized light source, a slit filter arranged at a position where the polarized light is focused and having a slit-like opening portion elongated in a direction perpendicular to the direction of polarization of the polarized light, the slit filter transmitting polarized light, of the polarized light passing through the photomask, which has the direction of polarization, a unit for changing the direction of the opening portion of the slit filter in synchronism with a change in direction of polarization of polarized light which is made by the polarization control unit, and a unit for illuminating the photomask with the polarized light at each position where the direction of the pattern becomes parallel to the direction of polarization of the polarized light, thereby exposing a pattern, formed on the photomask, onto the substrate at the angle of a direction of polarization perpendicular to an incident plane of light incident on the substrate.
摘要翻译：用于将通过光掩模在至少两个不同方向上延伸的光掩模的多个图案减少/投影到基板上的曝光装置包括用于照射光掩模的偏振光源，用于改变光掩模的方向的偏振控制单元偏振光从偏振光源的偏振光;狭缝滤光器，其设置在偏振光聚焦的位置处，并且具有在与偏振光的偏振方向垂直的方向上延伸的狭缝状开口部，狭缝滤光器透射通过具有偏振方向的光掩模的偏振光的偏振光与由偏振光的偏振光的偏振方向的变化同步地改变狭缝滤光片的开口部的方向的单元偏光控制单元，以及用于在每个po处以偏振光照射光掩模的单元其中图案的方向变得与偏振光的偏振方向平行，从而将形成在光掩模上的图案以垂直于入射到该光源的光的入射平面的偏振方向的角度暴露在基板上基质。

7. 发明申请

US20100112485A1 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 有权
标题翻译：掩模版，掩模版集合的设计方法，曝光监视方法，掩模版集合的检查方法以及半导体器件的制造方法
公开(公告)号：US20100112485A1
公开(公告)日：2010-05-06
申请号：US12654292
申请日：2009-12-16
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.
摘要翻译：标线组包括具有电路图案的第一光掩模，该电路图案设置有彼此相邻设置的夹着第一不透明部分的第一和第二开口以及邻近电路图案设置的监视标记; 以及第二光掩模，其具有装饰图案，其具有覆盖所述电路图案占据的区域中的所述第一不透明部分的第二不透明部分和连接到所述第一不透明部分的一端的延伸部分，并且当所述第二光掩模为与通过第一光掩模在衬底上描绘的图案对准。

8. 发明授权

US07655369B2 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 失效
公开(公告)号：US07655369B2
公开(公告)日：2010-02-02
申请号：US11646480
申请日：2006-12-28
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： G03C5/00 , G03F9/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

9. 发明申请

US20070105028A1 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 失效
标题翻译：掩模版，掩模版集合的设计方法，曝光监视方法，掩模版集合的检查方法以及半导体器件的制造方法
公开(公告)号：US20070105028A1
公开(公告)日：2007-05-10
申请号：US11646480
申请日：2006-12-28
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.
摘要翻译：标线组包括具有电路图案的第一光掩模，该电路图案设置有彼此相邻设置的夹着第一不透明部分的第一和第二开口以及邻近电路图案设置的监视标记; 以及第二光掩模，其具有装饰图案，其具有覆盖所述电路图案占据的区域中的所述第一不透明部分的第二不透明部分和连接到所述第一不透明部分的一端的延伸部分，并且当所述第二光掩模为与通过第一光掩模在衬底上描绘的图案对准。

10. 发明授权

US06252651B1 Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US06252651B1
公开(公告)日：2001-06-26
申请号：US09437259
申请日：1999-11-10
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B2742
CPC分类号： G03F7/70058 , G03F1/26 , G03F7/70425 , H01L21/28123 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

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