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51. 发明授权

US06984562B2 Method for forming dielectric layer between gates in flash memory device 有权
标题翻译：用于在闪存器件中的栅极之间形成电介质层的方法
公开(公告)号：US06984562B2
公开(公告)日：2006-01-10
申请号：US10879680
申请日：2004-06-29
申请人： Sang Wook Park
发明人： Sang Wook Park
IPC分类号： H01L21/336
CPC分类号： H01L29/7883
摘要： The present invention provides a method for preventing an oxide film from becoming thick due to the reaction of the oxide film and a floating gate in a method for manufacturing a flash memory device having a dielectric layer consisting of at least one oxide film between the floating gate and a control gate. To this end, a Si—F bonding layer is formed on the surface of a silicon film constituting the floating gate. The Si—F bonding layer is annealed in a nitrogen gas atmosphere to form a Si—N bonding layer. A dielectric layer is then formed.
摘要翻译：本发明提供了一种防止氧化膜由于氧化膜和浮动栅极的反应而变厚的方法，该方法用于制造具有由浮置栅极之间的至少一个氧化物膜构成的介电层的闪速存储器件和控制门。为此，在构成浮栅的硅膜的表面上形成Si-F键合层。 Si-F键合层在氮气气氛中退火以形成Si-N键合层。然后形成介电层。

52. 发明授权

US06967151B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06967151B2
公开(公告)日：2005-11-22
申请号：US10872883
申请日：2004-06-21
申请人： Pil Geun Song , Sang Wook Park
发明人： Pil Geun Song , Sang Wook Park
IPC分类号： H01L21/768 , H01L21/336 , H01L21/8234 , H01L23/522 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/823468
摘要： Provided is a method of manufacturing a semiconductor device. In the method, an insulation spacer is formed thicker than a target thickness on sidewalls of a gate line formed on a semiconductor substrate. The thickness of the insulation spacer is adjusted by means of a wet etching process, so that aspect ratios of spaces between gate lines become smaller to control opening widths of junction areas. The method enhances fill-up characteristics of insulation layers between the gate lines, and improves the reliability of process and an electrical characteristic of device by controlling the opening widths of junction areas.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，在形成在半导体衬底上的栅极线的侧壁上形成比目标厚度更厚的绝缘间隔物。通过湿式蚀刻工艺来调节绝缘间隔物的厚度，使得栅极线之间的空间的纵横比变得更小以控制接合区域的开口宽度。该方法提高了栅极线之间绝缘层的填充特性，并通过控制接合面积的开口宽度提高了工艺的可靠性和器件的电气特性。

53. 发明授权

US06780743B2 Method of forming a floating gate in a flash memory device 有权
标题翻译：在闪速存储器件中形成浮动栅极的方法
公开(公告)号：US06780743B2
公开(公告)日：2004-08-24
申请号：US10631200
申请日：2003-07-31
申请人： Sang Wook Park , Seung Cheol Lee , Jung Il Cho
发明人： Sang Wook Park , Seung Cheol Lee , Jung Il Cho
IPC分类号： H01L218247
CPC分类号： H01L27/11521 , H01L27/115
摘要： Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.
摘要翻译：公开了在第一和第二多晶硅膜堆叠的日期闪存器件中形成浮置栅极的方法。在形成第一多晶硅膜之后，引入SiH 4气体以将SiH 4和SiO 2分解成Si和H 2以及Si和O 2。然后实施N2退火工艺，使得分解的H 2气体和O 2气体与N 2气体反应，然后脱气。接着，引入SiH 4气体和PH 3气体，形成第二多晶硅膜。在第一多晶硅膜和第二多晶硅膜的界面内的自然氧化膜被去除以改善数据闪存器件的特性。

54. 发明授权

US06762103B2 Method of forming an isolation film in a semiconductor device 失效
标题翻译：在半导体器件中形成隔离膜的方法
公开(公告)号：US06762103B2
公开(公告)日：2004-07-13
申请号：US10617269
申请日：2003-07-10
申请人： Noh Yeal Kwak , Sang Wook Park , Cha Deok Dong
发明人： Noh Yeal Kwak , Sang Wook Park , Cha Deok Dong
IPC分类号： H01L21336
CPC分类号： H01L21/76229 , H01L21/76235 , H01L21/76237 , H01L27/1052 , H01L27/10894
摘要： Disclosed is a method of forming an isolation film in semiconductor devices using a shallow trench. Trenches are formed in silicon substrates of a memory cell region and a peripheral circuit region. The inert ion is then injected into the surface of the trench in the peripheral circuit region, thus forming an amorphous layer. Thereafter, an oxidization process is implemented so that a thick oxide film is grown due to excessive oxidization at the amorphous layer, thus making thicker the trench in the peripheral circuit region than the trench in the memory cell region by a thickness of the oxide film.
摘要翻译：公开了使用浅沟槽在半导体器件中形成隔离膜的方法。沟槽形成在存储单元区域和外围电路区域的硅衬底中。然后将惰性离子注入到外围电路区域中的沟槽的表面中，从而形成非晶层。此后，进行氧化处理，使得由于在非晶层处的过度氧化而生长厚的氧化膜，从而使外围电路区域中的沟槽比存储单元区域中的沟槽更厚，由此氧化膜的厚度变厚。

55. 发明授权

US06759296B2 Method of manufacturing a flash memory cell 失效
标题翻译：制造闪存单元的方法
公开(公告)号：US06759296B2
公开(公告)日：2004-07-06
申请号：US10286983
申请日：2002-11-04
申请人： Noh Yeal Kwak , Sang Wook Park
发明人： Noh Yeal Kwak , Sang Wook Park
IPC分类号： H01L21336
CPC分类号： H01L29/66825 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02255 , H01L21/02271 , H01L21/28247 , H01L21/28273 , H01L21/3144 , H01L21/31612 , H01L21/3165 , H01L21/3185 , H01L21/76834
摘要： The present invention relates to a method of manufacturing a flash memory cell. The method includes forming a stack gate in which a floating gate and a control gate are stacked at a given region of a semiconductor substrate, and performing a rapid thermal nitrification process to form a nitride film at the side of the stack gate and over the semiconductor substrate. Therefore, the present invention can improve a retention characteristic and can prevent movement of threshold voltage control ions.
摘要翻译：本发明涉及一种制造闪存单元的方法。该方法包括形成堆叠栅极，其中浮置栅极和控制栅极堆叠在半导体衬底的给定区域处，并且执行快速热硝化处理以在堆叠栅极侧和半导体层上形成氮化物膜基质。因此，本发明可以提高保持特性并且可以防止阈值电压控制离子的移动。

56. 发明授权

US06689805B2 Pyrazole-3-one derivative, method for preparing the same, and pharmaceutical composition containing the same 失效
标题翻译：吡唑-3-酮衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US06689805B2
公开(公告)日：2004-02-10
申请号：US10461978
申请日：2003-06-13
申请人： Il Hwan Cho , Ji Young Noh , Sang Wook Park , Hyung Chul Ryu , Jee Woong Lim , Jong Hoon Kim , Myeong Yun Chae , Dal Hyun Kim , Sung Hak Jung , Hyun Jung Park , Young Hoon Kim , In Ki Min
发明人： Il Hwan Cho , Ji Young Noh , Sang Wook Park , Hyung Chul Ryu , Jee Woong Lim , Jong Hoon Kim , Myeong Yun Chae , Dal Hyun Kim , Sung Hak Jung , Hyun Jung Park , Young Hoon Kim , In Ki Min
IPC分类号： A61K314152
CPC分类号： C07D231/20 , C07D231/18 , C07D231/22
摘要： A pyrazole-3-one derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: wherein: R1 and R2 each independently represent C1-C3 alkyl, aryl, or substituted aryl; R3 represents amino or methyl; R4 and R5 each independently represent hydrogen, C1-C3 alkyl, halogen, methyl substituted with halogen, C1-C3 alkoxy, cyano, or nitro; or a non-toxic salt thereof.
摘要翻译：提供式1的吡唑-3-酮衍生物或其无毒盐，其制备方法和含有该衍生物或盐作为活性成分的药物组合物：其中：R1和R2各自独立地表示C1- C3烷基，芳基或取代的芳基; R3表示氨基或甲基; R4和R5各自独立地表示氢，C1-C3烷基，卤素，被卤素取代的甲基，C1-C3烷氧基，氰基或硝基;或无毒的盐。

57. 发明授权

US06686493B2 3,4-dihydro-1H-naphthalene derivatives as a highly selective cyclooxygenase-2 inhibitor 失效
标题翻译： 3,4-二氢-1H-萘衍生物作为高选择性环加氧酶-2抑制剂
公开(公告)号：US06686493B2
公开(公告)日：2004-02-03
申请号：US10264073
申请日：2002-10-03
申请人： Il Hwan Cho , Jee Woong Lim , Ji Young Noh , Jong Hoon Kim , Sang Wook Park , Hyung Chul Ryu , Je Hak Kim , Hyung Ok Chun , So Young Wang , Sung Hak Lee
发明人： Il Hwan Cho , Jee Woong Lim , Ji Young Noh , Jong Hoon Kim , Sang Wook Park , Hyung Chul Ryu , Je Hak Kim , Hyung Ok Chun , So Young Wang , Sung Hak Lee
IPC分类号： C07C25549
CPC分类号： C07D261/20 , C07C317/24 , C07C317/32 , C07C2602/10 , C07D231/54
摘要： The present invention relates to a novel 3,4-dihydro-1H-naphthalene derivative having a structure of formula 1 or formula 2, its pharmaceutically acceptable salts and their geometric isomers as a highly selective cyclooxygenase-2 inhibitor. Wherein, R1, R2, X, A and Q are defined in this specification respectively.
摘要翻译：本发明涉及具有式1或式2结构的新型3,4-二氢-1H-萘衍生物，其药学上可接受的盐及其几何异构体作为高选择性环加氧酶-2抑制剂。其中R 1，本说明书中分别定义了R 2，X，A和Q。

58. 发明授权

US06348377B2 Method of manufacturing storage electrode in semiconductor device 失效
标题翻译：在半导体器件中制造存储电极的方法
公开(公告)号：US06348377B2
公开(公告)日：2002-02-19
申请号：US09867602
申请日：2001-05-31
申请人： Cha Deok Dong , Seung Cheol Lee , Sang Wook Park , Dong Jin Kim
发明人： Cha Deok Dong , Seung Cheol Lee , Sang Wook Park , Dong Jin Kim
IPC分类号： H01L218242
CPC分类号： H01L28/91 , H01L21/76895 , H01L28/84
摘要： A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder. By depositing an amorphous silicon film on the inner wall of the cylinder-type capacitor and Si-rich tungsten silicide film on the outer wall, the surface area of the inner wall expands through normal SMPS and a rugged tungsten silicide film is formed on the outer wall. Spacing between cells is preserved, while generation of a bridge is prevented.
摘要翻译：半导体器件中的圆柱形存储电极通过在多氧化物膜中形成接触孔并在膜上和孔中形成第一薄膜来制造。接下来，在第一薄膜上形成芯氧化膜和抗反射涂膜，以确定气缸的高度。然后通过蚀刻抗反射涂膜，芯氧化物膜和第一薄膜使得暴露多晶氧化物膜形成图案。在总体结构上形成第二薄膜，在第二薄膜上形成硅化钨层。然后通过对硅化钨膜和第二薄膜进行毯式蚀刻来形成圆筒的内壁和外壁，使得芯氧化膜暴露。在去除核心氧化物膜之后，进行选择性亚稳态多晶硅（SMPS）工艺，使得在圆筒的内壁和外壁处产生不同的晶粒生长。然后通过使圆筒退火形成存储电极。通过在圆筒型电容器的内壁和外壁上的富Si硅化钨膜上沉积非晶硅膜，内壁的表面积通过正常的SMPS膨胀，并且在外部形成坚固的硅化钨膜壁。保留了单元间的间隔，同时防止了桥的产生。

59. 发明授权

US08897703B2 Bluetooth device and method of searching for peripheral bluetooth device 有权
标题翻译：蓝牙设备和搜索外围蓝牙设备的方法
公开(公告)号：US08897703B2
公开(公告)日：2014-11-25
申请号：US12546116
申请日：2009-08-24
申请人： Sang Wook Park
发明人： Sang Wook Park
IPC分类号： H04B7/00 , H04W8/00
CPC分类号： H04W8/005
摘要： A Bluetooth device and a method of searching for a peripheral Bluetooth device using a previous search results are provided. The method of searching for a peripheral Bluetooth device includes: acquiring, if input instructing the start of an initial search is received, initial search address information and initial search device information about at least one peripheral Bluetooth device in a preset period; storing the acquired initial search address information and initial search device information in a storage unit; acquiring, if a request for searching for a peripheral device for performing Bluetooth communication is input, address information of a found peripheral Bluetooth device; determining whether address information corresponding to the acquired address information of the found peripheral Bluetooth device exists in the storage unit; and notifying a user, if address information corresponding to the acquired address information of the found peripheral Bluetooth device exists in the storage unit, of the stored initial search device information of the found peripheral device corresponding to the address information.
摘要翻译：提供了使用先前搜索结果来搜索外围蓝牙设备的蓝牙设备和方法。搜索外围蓝牙装置的方法包括：如果接收到指示开始初始搜索的输入，则在预设时段内获取关于至少一个外围蓝牙装置的初始搜索地址信息和初始搜索装置信息; 将所获取的初始搜索地址信息和初始搜索设备信息存储在存储单元中; 如果输入了用于搜索用于执行蓝牙通信的外围设备的请求，则获取所找到的外围蓝牙设备的地址信息; 确定与所获取的所找到的外围蓝牙装置的地址信息相对应的地址信息是否存在于存储单元中; 并且如果在存储单元中存在与所获取的外围设备蓝牙装置的所获取的地址信息相对应的地址信息，则通知给用户对应于所述地址信息的所找到的外围设备的所存储的初始搜索设备信息。

60. 发明申请

US20120115307A1 METHODS OF MANUFACTURING SEMICONDUCTOR CHIPS 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120115307A1
公开(公告)日：2012-05-10
申请号：US13253425
申请日：2011-10-05
申请人： Sang Wook Park , Tae Gyeong Chung , Ho Geon Song , Won Chul Lim
发明人： Sang Wook Park , Tae Gyeong Chung , Ho Geon Song , Won Chul Lim
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L25/0657 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/73265 , H01L2225/06562 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of manufacturing semiconductor chips includes providing a semiconductor substrate including circuit regions, irradiating the semiconductor substrate with a laser beam onto to form a frangible layer, and polishing the semiconductor substrate to separate the circuit regions of the semiconductor substrate from one another into semiconductor chips. The frangible layer may be removed completely during the polishing of the semiconductor substrate.
摘要翻译：制造半导体芯片的方法包括提供包括电路区域的半导体衬底，用激光束照射半导体衬底以形成易碎层，以及抛光半导体衬底以将半导体衬底的电路区域彼此分离为半导体芯片。在半导体衬底的抛光期间可以完全去除易碎层。

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