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51. 发明申请

US20050064098A1 Production of elemental films using a boron-containing reducing agent 有权
标题翻译：使用含硼还原剂生产元素膜
公开(公告)号：US20050064098A1
公开(公告)日：2005-03-24
申请号：US10990424
申请日：2004-11-16
申请人： Kai-Erik Elers , Ville Saanila , Sari Kaipio , Pekka Soininen
发明人： Kai-Erik Elers , Ville Saanila , Sari Kaipio , Pekka Soininen
IPC分类号： C23C16/02 , C23C16/04 , C23C16/08 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/285 , H01L21/768 , H01L23/522 , H01L23/532 , C23C16/00
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
摘要翻译：本发明一般涉及沉积元素薄膜。特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

52. 发明授权

US06821889B2 Production of elemental thin films using a boron-containing reducing agent 有权
标题翻译：使用含硼还原剂生产元素薄膜
公开(公告)号：US06821889B2
公开(公告)日：2004-11-23
申请号：US10210715
申请日：2002-07-30
申请人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1608
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
摘要翻译：本发明一般涉及沉积元素薄膜。特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

53. 发明授权

US08334218B2 Method of forming non-conformal layers 有权
标题翻译：形成非保形层的方法
公开(公告)号：US08334218B2
公开(公告)日：2012-12-18
申请号：US12573008
申请日：2009-10-02
申请人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
发明人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface.
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应。

54. 发明申请

US20100099264A1 ETCHING HIGH-K MATERIALS 有权
标题翻译：蚀刻高K材料
公开(公告)号：US20100099264A1
公开(公告)日：2010-04-22
申请号：US12254652
申请日：2008-10-20
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/31122
摘要： A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.
摘要翻译：用于蚀刻高k材料的干蚀刻方法，设备和系统包括在循环过程中依次使高k材料与气相还原剂和挥发性蚀刻剂接触。在一些优选的实施方案中，还原剂和/或挥发腐蚀剂是等离子体活化的。通过脉冲过程改善了蚀刻速率和/或选择性的控制，其中在一些实施例中，循环过程中的每个步骤具有自限制的蚀刻程度。该方法的实施例在集成装置的制造以及清洁处理室中是有用的。

55. 发明授权

US07595270B2 Passivated stoichiometric metal nitride films 有权
标题翻译：钝化的化学计量金属氮化物薄膜
公开(公告)号：US07595270B2
公开(公告)日：2009-09-29
申请号：US11627597
申请日：2007-01-26
申请人： Kai-Erik Elers , Steven Marcus
发明人： Kai-Erik Elers , Steven Marcus
IPC分类号： H01L21/31 , H01L23/48
CPC分类号： H01L21/76841 , C23C16/34 , C23C16/4554 , H01L21/28562 , H01L21/76856
摘要： Methods for forming passivated stoichiometric metal nitride films are provided along with structures incorporating such films. The preferred methods include contacting a substrate with alternating and sequential pulses of a metal source chemical, one or more plasma-excited species of hydrogen and a nitrogen source chemical to form a stoichiometric metal nitride film, followed by exposure of the stoichiometric metal nitride film to a source chemical of a passivating species to form a passivation layer over the stoichiometric metal nitride film.
摘要翻译：形成钝化的化学计量的金属氮化物膜的方法与结合这样的膜的结构一起提供。优选的方法包括使基底与金属源化学品，一种或多种等离子体激发的氢和氮源化学物质的交替和顺序脉冲接触以形成化学计量的金属氮化物膜，然后将化学计量的金属氮化物膜暴露于钝化物质的源化学物质，以在化学计量的金属氮化物膜上形成钝化层。

56. 发明授权

US07241677B2 Process for producing integrated circuits including reduction using gaseous organic compounds 有权
标题翻译：使用气态有机化合物制造集成电路的方法
公开(公告)号：US07241677B2
公开(公告)日：2007-07-10
申请号：US11110345
申请日：2005-04-19
申请人： Pekka Juha Soininen , Kai-Erik Elers
发明人： Pekka Juha Soininen , Kai-Erik Elers
IPC分类号： H01L21/20
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/28562 , H01L21/3105 , H01L21/321 , H01L21/76807 , H01L21/76814 , H01L21/76823 , H01L21/76831 , H01L21/76834 , H01L21/76838 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76883 , H01L21/76886 , H01L2224/32245 , H01L2224/45147 , H01L2224/48247 , H01L2924/00011 , H01L2924/12044 , H01L2924/00 , H01L2924/01005
摘要： This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (—OH), aldehyde (—CHO), and carboxylic acid (—COOH).
摘要翻译：本发明涉及一种制造集成电路的方法，该集成电路包含至少一层元素金属，其在集成电路的处理期间至少部分为金属氧化物的形式，并且使用含有某些官能团的有机化合物进行还原在制造集成电路期间形成的金属氧化物层。根据本发明方法，金属氧化物层至少部分还原成还原剂，还原剂选自含有一个或多个下列官能团的有机化合物：醇（-OH），醛（-CHO）和羧酸（-COOH）。

57. 发明授权

US07018917B2 Multilayer metallization 有权
标题翻译：多层金属化
公开(公告)号：US07018917B2
公开(公告)日：2006-03-28
申请号：US10719277
申请日：2003-11-20
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： H01L21/4763
CPC分类号： H01L21/288 , H01L21/76808 , H01L21/76811 , H01L21/76816 , H01L21/76844 , H01L21/76877 , H01L2221/1094 , H01L2224/13
摘要： Multiple metallization layers in a partially fabricated integrated circuit are formed in a single process step. As a place-holder for the later-deposited metallization layers, sacrificial material is deposited in the integrated circuit at desired locations at various fabrication levels over a substrate. The sacrificial material is then removed to form a contiguous open volume spanning multiple fabrication levels. A conductor is then deposited in the open volume to form multiple metallization layers in a single step.
摘要翻译：在单个工艺步骤中形成部分制造的集成电路中的多个金属化层。作为后续沉积的金属化层的放置支架，牺牲材料在衬底上以各种制造水平的期望位置沉积在集成电路中。然后去除牺牲材料以形成跨越多个制造水平的连续开放体积。然后将导体沉积在开放的体积中以在单个步骤中形成多个金属化层。

58. 发明授权

US06863727B1 Method of depositing transition metal nitride thin films 有权
标题翻译：沉积过渡金属氮化物薄膜的方法
公开(公告)号：US06863727B1
公开(公告)日：2005-03-08
申请号：US10110730
申请日：2000-10-13
申请人： Kai-Erik Elers , Suvi Päivikki Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Suvi Päivikki Haukka , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C16/455 , C23C16/32 , C23C16/34 , C23C16/44 , C30B25/02 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/285 , H01L21/768 , C30B25/14
CPC分类号： C30B29/38 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45531 , C23C16/45534 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/76843
摘要： This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.
摘要翻译：本发明涉及通过原子层沉积（ALD）型方法沉积过渡金属氮化物薄膜的方法。根据该方法，可以将金属源材料的气相脉冲，能够还原金属源材料的还原剂和能够与还原金属源材料反应的氮源材料交替并依次送入反应空间并与底物。根据本发明，当使用还原剂时，当与金属源材料反应时能够形成气态反应副产物的硼化合物。

59. 发明申请

US20050000431A1 Method of modifying source chemicals in an ALD process 审中-公开
标题翻译：在ALD过程中修改源化学品的方法
公开(公告)号：US20050000431A1
公开(公告)日：2005-01-06
申请号：US10867890
申请日：2004-06-14
申请人： Kai-Erik Elers
发明人： Kai-Erik Elers
IPC分类号： C23C16/448 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/285 , H01L21/768 , C23C16/00
CPC分类号： C30B29/38 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/4488 , C23C16/45525 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28568 , H01L21/76843 , H01L21/76877 , H01L2221/1078
摘要： The invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention, transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.
摘要翻译：本发明涉及一种用于修改ALD工艺中使用的源材料的方法，一种通过ALD工艺沉积过渡金属氮化物薄膜的方法和用于这种工艺的设备。根据本发明，过渡金属源材料通过蒸发金属源材料而被还原，将蒸发的金属源材料导入包含保持在高温下的固体还原剂的还原区。此后，金属源材料与固体或液体还原剂接触，以将源材料转化为还原金属化合物和具有足够高蒸汽压力的反应副产物，以便以气态形式输送。

60. 发明授权

US06599572B2 Process for growing metalloid thin films utilizing boron-containing reducing agents 有权
标题翻译：使用含硼还原剂生长准金属薄膜的方法
公开(公告)号：US06599572B2
公开(公告)日：2003-07-29
申请号：US09764692
申请日：2001-01-18
申请人： Ville Antero Saanila , Kai-Erik Elers , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Ville Antero Saanila , Kai-Erik Elers , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1606
CPC分类号： H01L21/28556 , C23C16/08 , C23C16/18 , H01L21/76843 , H01L21/76877
摘要： A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.
摘要翻译：用化学气相沉积工艺在衬底上生长导电准金属薄膜的方法。将能够将金属源材料还原为还原状态的金属源材料和还原剂蒸发并进料到金属源材料和还原剂与基板接触的反应空间中。还原剂是具有至少一个硼 - 碳键的硼化合物，当与金属源材料反应时，硼化合物形成气态副产物。通常，硼化合物是与硼连接的0-3个卤素基团的烷基硼化合物。金属源材料和还原剂可以在沉积过程中连续或以脉冲进料。

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