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1. 发明申请

US20100022099A1 METHOD OF FORMING NON-CONFORMAL LAYERS 有权
标题翻译：形成非一致层的方法
公开(公告)号：US20100022099A1
公开(公告)日：2010-01-28
申请号：US12573008
申请日：2009-10-02
申请人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
发明人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

2. 发明授权

US08334218B2 Method of forming non-conformal layers 有权
标题翻译：形成非保形层的方法
公开(公告)号：US08334218B2
公开(公告)日：2012-12-18
申请号：US12573008
申请日：2009-10-02
申请人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
发明人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface.
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应。

3. 发明授权

US07608549B2 Method of forming non-conformal layers 有权
标题翻译：形成非保形层的方法
公开(公告)号：US07608549B2
公开(公告)日：2009-10-27
申请号：US11375588
申请日：2006-03-13
申请人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
发明人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface.
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应。

4. 发明申请

US20070026540A1 Method of forming non-conformal layers 有权
标题翻译：形成非保形层的方法
公开(公告)号：US20070026540A1
公开(公告)日：2007-02-01
申请号：US11375588
申请日：2006-03-13
申请人： Sebastian Nooten , Jan Maes , Steven Marcus , Glen Wilk , Petri Raisanen , Kai-Erik Elers
发明人： Sebastian Nooten , Jan Maes , Steven Marcus , Glen Wilk , Petri Raisanen , Kai-Erik Elers
IPC分类号： H01L21/00 , B05C11/00 , C23C16/00 , H01L21/31
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

5. 发明授权

US08268409B2 Plasma-enhanced deposition of metal carbide films 有权
标题翻译：金属碳化物膜的等离子体增强沉积
公开(公告)号：US08268409B2
公开(公告)日：2012-09-18
申请号：US11873250
申请日：2007-10-16
申请人： Kai-Erik Elers , Glen Wilk , Steven Marcus
发明人： Kai-Erik Elers , Glen Wilk , Steven Marcus
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/32 , C23C16/45527 , C23C16/45542 , C23C16/515
摘要： Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.
摘要翻译：提供了形成金属碳化物膜的方法。在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物的气相脉冲和一种或多种等离子体激发的物质含碳化合物。在其他实施例中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括使反应空间中的底物与金属化合物和一种或多种等离子体激发的含碳化合物同时接触。将底物进一步暴露于还原剂。还原剂除去杂质，包括卤素原子和/或氧原子。

6. 发明申请

US20080113110A1 PLASMA-ENHANCED DEPOSITION OF METAL CARBIDE FILMS 有权
标题翻译：等离子体增强金属碳膜的沉积
公开(公告)号：US20080113110A1
公开(公告)日：2008-05-15
申请号：US11873250
申请日：2007-10-16
申请人： Kai-Erik Elers , Glen Wilk , Steven Marcus
发明人： Kai-Erik Elers , Glen Wilk , Steven Marcus
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/32 , C23C16/45527 , C23C16/45542 , C23C16/515
摘要： Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms
摘要翻译：提供了形成金属碳化物膜的方法。在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物的气相脉冲和一种或多种等离子体激发的物质含碳化合物。在其他实施例中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括使反应空间中的底物与金属化合物和一种或多种等离子体激发的含碳化合物同时接触。将底物进一步暴露于还原剂。还原剂除去杂质，包括卤素原子和/或氧原子

7. 发明授权

US07795160B2 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US07795160B2
公开(公告)日：2010-09-14
申请号：US11490875
申请日：2006-07-21
申请人： Chang-gong Wang , Eric J. Shero , Glen Wilk , Jan Willem Maes
发明人： Chang-gong Wang , Eric J. Shero , Glen Wilk , Jan Willem Maes
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/405 , C23C16/45531 , C23C16/45542 , H01L21/28194 , H01L21/31612 , H01L21/31645
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本上均匀的薄膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

8. 发明申请

US20080020593A1 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US20080020593A1
公开(公告)日：2008-01-24
申请号：US11490875
申请日：2006-07-21
申请人： Chang-gong Wang , Eric J. Shero , Glen Wilk , Jan Willem Maes
发明人： Chang-gong Wang , Eric J. Shero , Glen Wilk , Jan Willem Maes
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/405 , C23C16/45531 , C23C16/45542 , H01L21/28194 , H01L21/31612 , H01L21/31645
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本上均匀的薄膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

9. 发明申请

US20090280267A1 PLASMA-ENHANCED PULSED DEPOSITION OF METAL CARBIDE FILMS 有权
标题翻译：金属碳化物膜的等离子体增强脉冲沉积
公开(公告)号：US20090280267A1
公开(公告)日：2009-11-12
申请号：US12116894
申请日：2008-05-07
申请人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
发明人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
IPC分类号： C23C16/44 , C23C26/00
CPC分类号： C23C16/32 , C23C16/4554 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
摘要翻译：提供了形成金属碳化物膜的方法。在一些实施例中，将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。过渡金属物质与碳物质反应以沉积金属碳化物膜。底物与过渡金属物质同时暴露于碳物质，或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。在一些实施方案中，碳物质和过渡金属物质形成相同前体化合物的一部分，例如金属有机化合物。

10. 发明授权

US07666474B2 Plasma-enhanced pulsed deposition of metal carbide films 有权
标题翻译：金属碳化物膜的等离子体增强脉冲沉积
公开(公告)号：US07666474B2
公开(公告)日：2010-02-23
申请号：US12116894
申请日：2008-05-07
申请人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
发明人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
IPC分类号： H05H1/00 , C23C16/00
CPC分类号： C23C16/32 , C23C16/4554 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
摘要翻译：提供了形成金属碳化物膜的方法。在一些实施例中，将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。过渡金属物质与碳物质反应以沉积金属碳化物膜。底物与过渡金属物质同时暴露于碳物质，或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。在一些实施方案中，碳物质和过渡金属物质形成相同前体化合物的一部分，例如金属有机化合物。

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